BPW46L
Vishay Telefunken
1 (5)
Rev. 2, 16-Nov-99 www.vishay.de •FaxBack +1-408-970-5600
Document Number 81525
Silicon PIN Photodiode
Description
BPW46L is a high speed and high sensitive PIN photo-
diode in a flat side view plastic package. Due to its
waterclear epoxy the device is sensitive to visible and
infrared radiation.
The large active area combined with a flat case gives
a high sensitivity at a wide viewing angle.
Features
D
Long lead package (33,2 mm)
D
Large radiant sensitive area (A=7.5 mm2)
D
Wide angle of half sensitivity ϕ = ± 65
°
D
High photo sensitivity
D
Fast response times
D
Small junction capacitance
D
Clear plastic case
D
Suitable for visible and near infrared radiation
14439
Applications
High speed photo detector
Absolute Maximum Ratings
Tamb = 25
_
CParameter Test Conditions Symbol Value Unit
Reverse Voltage VR60 V
Power Dissipation Tamb
x
25
°
CPV215 mW
Junction Temperature Tj100
°
C
Storage Temperature Range Tstg –55...+100
°
C
Soldering Temperature t
x
5 s Tsd 260
°
C
Thermal Resistance Junction/Ambient RthJA 350 K/W
BPW46L
Vishay Telefunken
2 (5) Rev. 2, 16-Nov-99
www.vishay.de •FaxBack +1-408-970-5600 Document Number 81525
Basic Characteristics
Tamb = 25
_
C
Parameter Test Conditions Symbol Min Typ Max Unit
Breakdown Voltage IR = 100
m
A, E = 0 V(BR) 60 V
Reverse Dark Current VR = 10 V, E = 0 Iro 2 30 nA
Diode Capacitance VR = 0 V, f = 1 MHz, E = 0 CD70 pF
VR = 3 V, f = 1 MHz, E = 0 CD25 40 pF
Open Circuit Voltage Ee = 1 mW/cm2,
l
= 950 nm Vo350 mV
Temp. Coefficient of VoEe = 1 mW/cm2,
l
= 950 nm TKVo –2.6 mV/K
Short Circuit Current EA = 1 klx Ik70
m
A
Ee = 1 mW/cm2,
l
= 950 nm Ik47
m
A
Temp. Coefficient of IkEe = 1 mW/cm2,
l
= 950 nm TKIk 0.1 %/K
Reverse Light Current EA = 1 klx, VR = 5 V Ira 75
m
A
g
Ee = 1 mW/cm2,
l
= 950 nm, VR = 5 V Ira 40 50
m
A
Angle of Half Sensitivity ϕ±65 deg
Wavelength of Peak Sensitivity
l
p900 nm
Range of Spectral Bandwidth
l
0.5 600...1050 nm
Noise Equivalent Power VR = 10 V,
l
= 950 nm NEP 4x10–14 W/√ Hz
Rise Time VR = 10 V, RL = 1k
W
,
l
= 820 nm tr100 ns
Fall Time VR = 10 V, RL = 1k
W
,
l
= 820 nm tf100 ns
Typical Characteristics (Tamb = 25
_
C unless otherwise specified)
20 40 60 80
1
10
100
1000
I – Reverse Dark Current ( nA )
ro
Tamb – Ambient Temperature ( °C )
100
94 8403
VR=10V
Figure 1. Reverse Dark Current vs. Ambient Temperature
020406080
0.6
0.8
1.0
1.2
1.4
I – Relative Reverse Light Current
ra rel
Tamb – Ambient Temperature ( °C )
100
94 8416
VR=5V
l
=950nm
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
BPW46L
Vishay Telefunken
3 (5)
Rev. 2, 16-Nov-99 www.vishay.de •FaxBack +1-408-970-5600
Document Number 81525
0.01 0.1 1
0.1
1
10
100
1000
I – Reverse Light Current ( A )
ra
Ee – Irradiance ( mW/cm2 )
10
94 8417
m
VR=5V
l
=950nm
Figure 3. Reverse Light Current vs. Irradiance
0.1
1
10
100
1000
EA – Illuminance ( lx )94 8418
I – Reverse Light Current ( A )
ra
m
101102103104
VR=5V
Figure 4. Reverse Light Current vs. Illuminance
0.1 1 10
1
10
100
VR – Reverse Voltage ( V )
100
94 8419
I – Reverse Light Current ( A )
ra
m
1mW/cm2
0.5mW/cm2
0.2mW/cm2
0.1mW/cm2
0.05mW/cm2
l
=950nm
Figure 5. Reverse Light Current vs. Reverse Voltage
0.1 1 10
0
20
40
60
80
C – Diode Capacitance ( pF )
D
VR – Reverse Voltage ( V )
100
94 8407
E=0
f=1MHz
Figure 6. Diode Capacitance vs. Reverse Voltage
350 550 750 950
0
0.2
0.4
0.6
0.8
1.0
1150
94 8420
S ( ) – Relative Spectral Sensitivity
rel
l
– Wavelength ( nm )
l
Figure 7. Relative Spectral Sensitivity vs. Wavelength
0.4 0.2 0 0.2 0.4
S – Relative Sensitivity
rel
0.6
94 8406
0.6
0.9
0.8
0°30°
10
°20
°
40°
50°
60°
70°
80°
0.7
1.0
Figure 8. Relative Radiant Sensitivity vs.
Angular Displacement
BPW46L
Vishay Telefunken
4 (5) Rev. 2, 16-Nov-99
www.vishay.de •FaxBack +1-408-970-5600 Document Number 81525
Dimensions in mm
14437
BPW46L
Vishay Telefunken
5 (5)
Rev. 2, 16-Nov-99 www.vishay.de •FaxBack +1-408-970-5600
Document Number 81525
Ozone Depleting Substances Policy Statement
It is the policy of V ishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
