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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. MMBT2369A NPN Switching Transistor Description 3 This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from process 21. 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Marking Package Packing Method MMBT2369A 1S SOT-23 3L Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Value Unit VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.5 V Collector Current - Continuous 200 mA -55 to +150 C IC TJ, TSTG Parameter Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. (c) 1997 Fairchild Semiconductor Corporation MMBT2369A Rev. 1.1.0 www.fairchildsemi.com MMBT2369A -- NPN Switching Transistor November 2014 Values are at TA = 25C unless otherwise noted. Symbol PD RqJA Parameter Value Unit 225 mW Derate Above 25C 1.8 mW/C Thermal Resistance, Junction-to-Ambient 556 C/W Total Device Dissipation Note: 3. Device is mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch. Electrical Characteristics Values are at TA = 25C unless otherwise noted. Symbol Parameter BVCEO Collector-Emitter Breakdown Voltage(4) Conditions IC = 10 mA, IB = 0 Min. Max. 15 Unit V BVCES Collector-Emitter Breakdown Voltage IC = 10 A, VBE = 0 40 V BVCBO Collector-Base Breakdown Voltage IC = 10 A, IE = 0 40 V BVEBO Emitter-Base Breakdown Voltage IE = 10 A, IC = 0 4.5 V ICBO hFE VCE(sat) Collector Cut-Off Current DC Current Gain(4) Collector-Emitter Saturation Voltage(4) VCB = 20 V, IE = 0 0.4 VCB = 20 V, IE = 0, TA = 125C 30 IC = 10 mA, VCE = 1.0 V 40 IC = 10 mA, VCE = 0.35 V, TA = -55C 20 IC = 100 mA, VCE = 1.0 V 20 0.20 IC = 10 mA, IB = 1.0 mA, TA = 125C 0.30 IC = 30 mA, IB = 3.0 mA 0.25 IC = 100 mA, IB = 10 mA 0.50 0.70 IC = 10 mA, IB = 1.0 mA, TA = -55C VBE(sat) Base-Emitter Saturation Voltage 120 IC = 10 mA, IB = 1.0 mA IC = 10 mA, IB = 1.0 mA IC = 10 mA, IB = 1.0 mA, TA = 125C A V 0.85 1.02 V 0.59 IC = 30 mA, IB = 3.0 mA 1.15 IC = 100 mA, IB = 10 mA 1.60 Cobo Output Capacitance VCB = 5.0 V, IE = 0, f = 1.0 MHz 4.0 pF Cibo Input Capacitance VEB = 0.5 V, IC = 0, f = 1.0 MHz 5.0 pF hfe Small-Signal Current Gain IC = 10 mA, VCE = 10 V RG = 2.0 k, f = 100 MHz ts Storage Time IB1 = IB2 = IC = 10 mA 13 ns ton Turn-On Time VCC = 3.0 V, IC = 10 mA, IB1 = 3.0 mA 12 ns toff Turn-Off Time VCC = 3.0 V, IC = 10 mA, IB1 = 3.0 mA, IB2 = 1.5 mA 18 ns 5.0 Note: 4. Pulse test: Pulse width 300 s, duty cycle 2% (c) 1997 Fairchild Semiconductor Corporation MMBT2369A Rev. 1.1.0 www.fairchildsemi.com 2 MMBT2369A -- NPN Switching Transistor Thermal Characteristics(3) V CESAT - COLLE CTOR-EMITTER VOLTAGE (V) VC E = 1.0V 150 125 C 100 25 C 50 - 40 C h FE - DC CURRENT GAIN 200 0.01 IC 0.1 1 10 - COLLECTOR CURRENT (mA) 100 1.4 = 10 1.2 1 0.8 0.6 0.4 - 40 C 25 C 125 C 0.1 IC 1 10 100 - COLLE CTOR CURRENT ( mA) 0.3 25 C 0.2 - 40 C 0 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) 500 300 1 - 40C 0.8 25 C 125 C 0.6 0.4 V CE= 1.0V 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 Figure 4. Base-Emitter On Voltage vs. Collector Current 5 600 F = 1.0MHz V CB = 20V CAPACITANCE (pF) I CBO - COLLECTOR CURRENT (nA) 125 C 0.1 Figure 3. Base-Emitter Saturation Voltage vs. Collector Current 100 10 1 25 = 10 0.4 Figure 2. Collector-Emitter Saturation Voltage vs. Collector Current V BE(O N) - BASE-E MITTER ON VOLTAGE (V) V BESAT- BASE-EMITTER VOLTAG E (V) Figure 1. DC Current Gain vs. Collector Current 0.5 50 75 100 125 T A - AMBIENT TE MPERATURE (C) C ibo 3 C obo 2 1 0 0.1 150 Figure 5. Collector Cut-Off Current vs. Ambient Temperature (c) 1997 Fairchild Semiconductor Corporation MMBT2369A Rev. 1.1.0 4 0.5 1 5 10 REVERSE BIAS VOLTAGE (V) 50 Figure 6. Output Capacitance vs. Reverse Bias Voltage www.fairchildsemi.com 3 MMBT2369A -- NPN Switching Transistor Typical Performance Characteristics 12 VCC = 3.0 V I C = 10 I B1 = I B2 = 10 50 tsf S WITCHING TIMES ( ns) SWITCHING TIMES (ns) 100 20 tsr 10 5 t sf 2 tss ts d 1 2 5 10 20 50 100 I C - COLLECTOR CURRENT (mA) 10 tss 8 6 tsd 4 tsr 2 I C= 10 mA, I B1 = 3.0 mA, I B2 = 1.5 mA, VCC = 3.0 V 0 25 300 T -12 I C = 10 mA VCC = 3.0 V -10 -8 t s= 3.0 ns -6 4.0 ns -4 -2 0 6.0 ns 0 2 4 6 8 I B1 - TURN ON BASE CURRENT (mA) 10 -30 C VCC = 3.0 V -20 t S= 3.0 ns 8.0 ns t f = 7.0 ns -3 -2 10 ns -1 0 0 2 I B1 4 6 8 - TURN ON BASE CURRENT (mA) 10 Figure 11. Fall Time vs. Turn-On and Turn-Off Base Currents (c) 1997 Fairchild Semiconductor Corporation MMBT2369A Rev. 1.1.0 4.0 ns 8.0 ns 6.0 ns -15 -10 I B2 - TURN OFF BASE CURRENT (mA) I B2 - TURN OFF BASE CURRENT (mA) VCC = 3.0 V -4 100 16.0 ns -5 0 0 5 10 15 20 25 I B1 - TURN ON BASE CURRENT (mA) 30 Figure 10. Storage Time vs. Turn-On and Turn-Off Base Currents I C = 10 mA -5 I = 100 mA -25 Figure 9. Storage Time vs. Turn-On and Turn-Off Base Currents -6 50 75 - AMBIENT TE MPERATURE (C) Figure 8. Switching Times vs. Ambient Temperature I B2 - TURN OFF BASE CURRENT (mA) I B2 - TURN OFF BASE CURRENT (mA) Figure 7. Switching Times vs. Collector Current A -12 I C= 30 mA VCC = 3.0 V -10 -8 3.0 ns 4.0 ns t f = 2.0 ns -6 5.0 ns -4 -2 0 0 2 4 6 8 10 I B1 - TURN ON BASE CURRENT (mA) 12 Figure 12. Fall Time vs. Turn-On and Turn-Off Base Currents www.fairchildsemi.com 4 MMBT2369A -- NPN Switching Transistor Typical Performance Characteristics (Continued) I C = 100 mA 3.0 ns VCC = 3.0 V -25 -20 V BE(O)- BASE-EMITTER OFF VOLTAGE (V) I B2 - TURN OFF BASE CURRENT (mA) -30 4.0 ns t f = 2.0 ns 8.0 ns -15 12.0 ns -10 -5 0 0 5 I B1 10 15 20 25 - TURN ON BASE CURRENT (mA) 30 t r= 2.0 ns 5.0 ns 1 20 ns 10 ns 0 1 10 100 I C - COLLE CTOR CURRENT (mA) 500 Figure 15. Rise Time vs. Turn-On Base Current and Collector Current (c) 1997 Fairchild Semiconductor Corporation MMBT2369A Rev. 1.1.0 t d = 8.0 ns -4 5.0 ns -3 4.0 ns -2 3.0 ns -1 P D - POW ER DISSIPATION (mW) - TURN ON BASE CURRENT (mA) B1 I VCC = 3.0 V 10 I C = 10 mA V CC = 3.0 V -5 0 1 2 5 10 20 I B1 - TURN ON BASE CURRENT (mA) 50 Figure 14. Delay Time vs. Base-Emitter Off Voltage and Turn-On Base Current Figure 13. Fall Time vs. Turn-On and Turn-Off Base Currents 50 -6 500 400 TO-92 300 200 SOT-23 100 0 0 25 50 75 100 TE MPE RATURE ( C) 125 150 Figure 16. Power Dissipation vs. Ambient Temperature www.fairchildsemi.com 5 MMBT2369A -- NPN Switching Transistor Typical Performance Characteristics (Continued) MMBT2369A -- NPN Switching Transistor Physical Dimensions 0.95 2.920.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.400.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 0.25 0.20 MIN (0.55) SEATING PLANE SCALE: 2X Figure 17. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (c) 1997 Fairchild Semiconductor Corporation MMBT2369A Rev. 1.1.0 www.fairchildsemi.com 6 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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