CYPRESS SEMICONDUCTOR | Features e CMOS for optimum speed/power Windowed for reprogrammability @ High speed 45ns e Low power 550 mW (commercial) 660 mW (military) e@ Super low standby power (7C251) - Less than 165 mW when deselected ~ Fast access: 50 ns @ EPROM technology 100% programmable @ Slim 300-mil or standard 600-mil packaging available @ 5V 10% Vcc, commercial and CYPRESS SEMICONDUCTOR 7. 4bBE D = 2589bbe OOOb7b? 1 EaCyYP CY7C251 THb-3-24 Cy7C254 16,384 x 8 PROM Power Switched and Reprogrammable @ TYTL-compatible /O @ Direct replacement for bipolar PROMs @ Capable of withstanding >2001V stat- fc discharge Functional Description The CY7C251 and CY7C254 are high- performance 16,384-word by 8-bit CMOS PROMs. When deselected, the CY7C251 automatically powers down into a low- power stand-by mode. It is packaged in a 300-mil-wide package, The 7C254 is packaged in a 600-mil-wide package and does not power down when deselected. The 7C251 and 7C254 are available in re- programmable packages equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory The CY7C251 and CY7C254 are plug-in replacements for bipolar devices and offer the advantages of lower power, Superior performance, and high programming yield. The EPROM cell requires only 12.5V for the super voltage, and low current re- quirements allow for gang programming. The EPROM cells allow each memory lo- cation to be tested 100% because each lo- cation is written into, erased, and repeat- edly exercised prior to encapsulation. Each PROM is also tested for AC per- formance to guarantee that after custom- er programming, the product will meet DC and AC specification limits. Reading is accomplished by placing all four chip selects in their active states. The contents of the memory location ad- dressed by the address lines (Ag A13) will become available on the output lines military celts utilize proven EPROM floating gate (Og O7). technology and byte-wide intelligent pro- gramming algorithms. Logic Block Diagram Pin Configurations _pip/riatpack O, A(t Aig Aiz Au Os Ato ADDRESS OECODER SPRFP PT SPIE Os O% a Gast-1 C251-2 PSFPVIPI EF Selection Guide Current (mA: only) 7C251-45,7C25445 | 7C251~55,7C025455 | 7C25165, 7C254-65 3-42WBE D MM 258%bb2 GOOb?7bS 3 ENCYP CY7C251 CY7C254 & - CYPRESS SEMICONDUCTOR az t om | ae eT Sb+/3 | - Maximum Ratings . (Abovewhich the useful life may be impaired. Foruserguidelines, Static Discharge Voltage ..........++ seneeeen we. =>2001V PROMs nottested.) (per MIL-STD-883, Method 3015) Storage Temperature .....sceeeercvers = 65Cto +150C - Latch-UpCurrent .......cssceeereeeerceeenes > 200mA Ambient Temperaturewith UVERXpOSUTE .. cece cece enon ees ceceeesees 7258 Wsec/cm PowerApplied ...csecsseeserersrensen 9S Cto +125C , Supply Voltage to Ground Potential Operating Range (Pin 28 to Pin 14) .....ee creer eeeeeeees 0.5V to +7.0V Ambient DC Voltage Applied to Outputs Range Temperature Vcc in High ZState ......ssecseveeeeeeneees O.5V to +7.0V Commercial 0Cto +70C 35V 10% DC Input Voltage ..... secteseestscerees 7 3,0V to +7.0V : Industrial] 40 5V +10% DC Program Voltage (Pin 22) ....sececsereeesseeress 13,5V austria 40C to +85C Militaryl2! 55C to +125C 5V 10% Electrical Characteristics Over the Operating Rangel* 41 7025145, 55, 65 7025445, 55, 65 Parameters Description Test Conditions Min. Max. Units Vou Output HIGH Voltage Vcc = Min. low = 4.0mA 24 Vv VoL Output LOW Voltage Vec = Min. Io: = 16.0 mA 0.5 Vv Vin Input HIGH Level Guaranteed Input Logical HIGH 2.0 Vv Voltage for All Inputs Vin Input LOW Level Guaranteed Input Logical LOW 0.8 Vv Voltage for All Inputs ix InputCurrent GND < Vin < Voc ~ 10 +10 BA Veo Input Diode Clamp Voltage : Note 4 loz Output LeakageCurrent GND < Vout < Vcc, Output Disabled ~ 40 +40 pA los Output Short Circuit Current?! Voc = Max., Vout = GND 20 90 mA Tec Power Supply Current Vcc = Max. Iour = OmA Com! 100 mA Mil 120 Isp Standby Supply Current xg = Max, Coml 30 mA 5 = = . (70251) 1 = Vi lout = OMA Mil 35 Vpp Programming Supply Voltage 12 13 Vv Ipp Programming Supply Current 50 mA Vine Input HIGH Programming 3.0 Vv Voltage Virp Input LOW Programming 0.4 Vv Voltage Capacitancel] Parameters Description Test Conditions Max. Units Cin Input Capacitance Ta = 25C, f = 1 MHz, 10 pF Cout OutputCapacitance Vcc = 5.0V 10 pF Notes: 1, Contact a Cypress representative regarding industrial temperature 4, Seethe Introduction to CMOS PROMs section of the Cypress Data tangespecification. 2. Tais the instant on case temperature, 3, Seethe last page of this specification for Group A subgroup testing in- formation. Book for general information on testing. 5. For test purposes, not more than one output at a time should be 4 e ies y 4 4 , 4 shorted. Short circuit test duration should not exceed 30 seconds.0 CYPRESS SEMICONDUCTOR 4LE D 258%9bb2 0006769 S Eacyp SS CY7C251 = a T by b-13AY __._CVIC254 SSS SEMICONDUCTOR AC Test Loads and Waveforms(4] Q ad ny Sv al ALL INPUT PULSES eee Td rs 3.0V --. oe R2 R2 ND orl 1500 - rl 159 INCLUDING INCLUDING <5ns JIGAND ~ - JIGAND = . SCOPE SCOPE c2st-4 0251-5 . (a) . (b) High Z Load Equivatentto: THEVENIN EQUIVALENT 95Q OUTPUT o-_-~ww-_ 2.02V 251-8 - Switching Characteristics Over the Operating Range! 4] 7C25145 70251-55 7C251-65 7025445 70254-55 7C254-65 Parameters Description Min. | Max. | Min. | Max. | Min. | Max. | Units taa Address to Output Valid 45 55 65 ns tyzcs1 Chip Select Inactive to High Zl 25 30 35 ns tuzcs2 Chip Select Inactive to High Z (7C251, CS Only) 50 60 70 ns tacsi Chip Select Active to Output Validll 25 30 35 ns tacs2 Chip Select Active to Output Valid (7C251, CS, Only) 50 60 70 ns tpu Chip Select Active to Power Up (7C251) 0 0 0 ns. tpp Chip Select Inactive to Power Down (7C251)(71 50 60 70 ns Switching Waveforml4: 7] tep aupeig CURRENT 50% 50% Ag Aig SY ADDRESS cee oe x < tar + tuzcs > t+ tacs Oo ~ Or XXX Notes: -6. tuzcs1 and tacs; refers to 70254 (all chip selects); and 7251(CS2, 7. Power-down controlled by 7C251 CS, only. CS3 and CS, only).CYPRESS SEMICONDUCTOR WEE D MM 2589bbe 0006770 1 GacyP CY7C251 CY7C254 T4612 AT Erasure Characteristics Wavelengths of light less than 4000 angstroms begin to erase the 7C251 and 70254 in the windowed package. For this reason, an opaque label should be placed over the window if the PROM is exposed to sunlight or fluorescent lighting for extended periods of time. The recommended dose of ultraviolet light for erasure is a wave- length of 2537 angstroms for a minimum dose (UV intensity x ex- posure time) of 25 Wsec/cm?. For an ultraviolet lamp with a 12 mW/cm? power rating, the exposure time would be approximately 35 minutes. The 70251 or 7C254 needs to be within 1 inch of the lamp during erasure, Permanent damage may result if the PROM is exposed to high-intensity UV light for an extended period of time. 7258 Wsec/om? is the recommended maximum dosage. Blankcheck Blankcheck is accomplished by performing a verify cycle (VFY togeles on each address), sequencing through all memory address locations, where all the data read will be zeros. Programming Information Programming support is available from Cypress as well as from a number of third-party software vendors. For detailed program- ming information, including a listing of software packages, please see the PROM Programming Information located at the end of this section. Programming algorithms can be obtained from any Cypress representative. PROMs | re Table 1. Mode Selection Pin Function) Read or Output Disable Ag ~ Ag CS, CS3 CS: C81 07 ~ 0 Mode | Other Ais Ag NA VEY Vep PGM D7 Do Read Ay Ap Vit Vin ViL Vit 07-09 Output Disable Ayg ~ Ag x x x Vin High Z Output Disable Ais Ag X x Vin X High Z Output Disable Ay3 Ag x Vit x x High Z Output Disable Ay AQ Vin x x x High Z Program Ais ~ Ag x Vine Vpp Vine D7 - Dg Program Verify Aya Ag x Vite Vep Vine O7- Op Program Inhibit Ayg Ag x Vinp Vpp Vine High Z Blank Check A13 Ao x Vite Vepp Vie O7-Oo Notes: 8 X= don't care but not to exceed Voc 5%. DIP/Flatpack Top View PPooe gg q2222 ? 251-8 PS FPPR IPT Figure 1. Programming Pinout 3-45NORMALIZED tog NORMALIZED ACCESS TIME UbE D MM 2589bb2 0006771 4 EacyYP aa NORMALIZED SUPPLY CURRENT va, SUPPLY VOLTAGE 1.4 12 > 1.0 a Zz Ta = 25C 08 f= fax 0.6 40 45 5.0 5.5 6.0 SUPPLY VOLTAGE (V) NORMALIZED ACCESS TIME ys, TEMPERATURE 1.0 i = 0.8 06 ~ 55 25 725 AMBIENTTEMPERATURE (C) CY7C251 TYb6SZ2"AP CYTC254 NORMALIZED SUPPLY CURRENT , NORMALIZED ACCESS TIME vs. AMBIENT TEMPERATURE vs. SUPPLY VOLTAGE 12 1.2 ul 8414 1.0 ae a i _~ N 1.0 < zt < 08 8S Zz 09 SS = 0.6 S Ta = 25C 08 0.4 1 =55 ~ 25 125 40 45 50 55 60 AMBIENTTEMPERATURE (C) SUPPLY VOLTAGE {V) OUTPUT SOURCE CURRENT TYPICAL ACCESS TIME CHANGE vs. VOLTAGE vs. OUTPUT LOADING OUTPUT SOURCE CURRENT (mA) 0 1.0 2.0 3.0 OUTPUT VOLTAGE (V) OUTPUT SINK CURRENT ys. OUTPUT VOLTAGE 175 ~ = ask 8 Vec = 5.0V Ta = 25C OUTPUT SINK CURRENT (mA) 8 np oa o o 1.0 2.0 3.0 QUTPUT VOLTAGE (V) 30.0 = 200 2, ct a @ 40.0 5.0 0.0 4.0 4.0 Q Voc = 4.5V Ta = 25C 200 400 600 800 1000 CAPACITANCE (pF)mM CYPRESS SEMICONDUCTOR WEE D ma 2589bb2 ooob?7?e 5S BACYP == CY7C251 = ~/2- CY7C254 Sse SINCOWUCTER 7 '16-13-Q9 = Ordering Information! MILITARY SPECIFICATIONS Speed Package | Operating Group A Subgroup Testing (ns) Ordering Code Type Range a 45 | CY7C25145DC D22 [Commercial] DC Characteristics CY7C25145PC P21 Parameters Subgroups CY7C251-45WC W22 Vou 1,2,3 CY7C251~45DMB D22 Military VoL 1, 2,3 CY7C251-45WMB W22 Vin 1,2,3 55 CY7C251-55DC D22 Commercial Vit 1, 2,3 CY7C25155PC P21 lix 1,2,3 CY7C251-SSWC W22 loz 1,2,3 CY7C251-55DMB D22 Military Iec 1,2,3 CY7C251S5SLMB L55 Igplt9l 1,2,3 CY7C251-S5QMB Q55 , CY7C251-55WMB W22 Switching Characteristics 65 CY7C251~65DC D22 Commercial Parameters Subgroups C7C25165PC P21 tAA 7,8,9, 10,11 CY7C251-65WC W22 _ tacsilll 7,8,9, 10, 11 CY7C251~65DMB D22 Military t racsttOl 7,8, 9, 10, 11 CY7C251-65LMB LS55 CY7C25165QMB 055 SMD Cross Reference CY7C251--65WMB W22 SMD Cypress Number Suffix Number Speed Package | Operating | [ 59628953701 YX | CY7C251-65WMB (ns) Ordering Code Type Range 59628953701 ZX | CY7C251-65TMB 45 CY7CI54- ASDC Di6__| Commercial | ["5562-8953701 VX | CY7C251-650MB CY7C25445PC P15 CY71CI5445WC Wi6 5$962--8953702 YX CY7C25155WMB C7025445DMB D16 Military 59628953702 ZX C7C251-SSTMB CY7C254-45WMB W16 59628953702 VX CY7C251S5QMB 355 CY7C25455DC Di6 Commercial 59628953801 XX CY7C254-65WMB C7C254SSPC PiS 5962-8953801 ZX | CY7C254-65TMB ee _ 59628953801 VX _ | CY7C254650MB flit CYICISECS5LMB 5 ay 59628953802 XX CY7C25455WMB CY7CIS4=550MB O55 59628953802 ZX | CY7C254-55TMB CY7C25455WMB WI16 59628953802 VX. CY7C254SSQMB 65 CY7C25465DC Di6 Commercial | Notes: 9. Most of these products are available in industrial temperature range. C7C254652C Pis Contacta Cypress representative for specifications and product avail CY7C25465WC W16 ability, = a 10. 70251 (CS, only). CY7C25465DMB D16__| Military 11, 70254 and 7C251 (CSp, CS3 and CS; only). CY7C25465LMB L55 CY7C254-650MB 055 Document #: 3800056-F CY7C25465WMB Wi6 3-47 PROMs A