NTE2501 (NPN) & NTE2502 (PNP)
Silicon Complementary Transistors
High Voltage for Video Output
Features:
DHigh Breakdown Voltage
DExcellent High Frequency Characteristics
Applications:
DHigh Definition CRT Display
DColor TV Chroma Output, High Breakdown Voltage Drivers
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO 300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, VCEO 300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO 5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous 100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 200mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, PC
TA = +25°C 1.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TC = +25°C 7W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current ICBO VCB = 200V, IE = 0 – – 0.1 µA
Emitter Cutoff Current IEBO VEB = 4V, IC = 0 – – 0.1 µA
DC Current Gain hFE VCE = 10V, IC = 10mA 100 – 200
Gain Bandwidth Product fTVCE = 30V, IC = 10mA – 70 – MHz
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Output Capacitance
NTE2501 Cob VCB = 30V, f = 1MHz –2.6 –pF
NTE2502 –3.1 –pF
Reverse Transfer Capacitance
NTE2501 Cre VCB = 30V, f = 1MHz –1.8 –pF
NTE2502 –2.3 –pF
Collector–Emitter Saturation Voltage VCE(sat) IC = 20mA, IB = 2mA – – 600 mV
Base–Emitter Saturation Voltage VBE(sat) IC = 20mA, IB = 2mA – – 1.0 V
Collector–Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 300 – – V
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞300 – – V
Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 5– – V
ECB
.315 (8.0) .130
(3.3)
.295
(7.5)
.433
(11.0)
.610
(15.5)
.118 (3.0)
Dia
.094 (2.4)
