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AMPLIFIERS - LOW NOISE - SMT
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HMC376LP3 / 376LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 700 - 1000 MHz
v01.0610
General Description
Features
Functional Diagram
The HMC376LP3 & HMC376LP3E are GaAs PHEMT
MMIC Low Noise Ampli ers that are ideal for GSM
& CDMA cellular basestation front-end receivers
operating between 700 and 1000 MHz. The ampli er
has been optimized to provide 0.7 dB noise gure,
15 dB gain and +36 dBm output IP3 from a single
supply of +5V. The HMC376LP3(E) feature an
externally adjustable supply current which allows the
designer to tailor the linearity performance of the LNA
for each application. For applications which require
improved noise gure, please see the HMC617LP3(E).
Noise Figure: 0.7 dB
Output IP3: +36 dBm
Gain: 15 dB
Externally Adjustable Supply Current
Single Positive Supply: +5V
50 Ohm Matched Input/Output
Electrical Speci cations, TA = +25° C, Vdd = +5V, Rbias = 10 Ohms*
Typical Applications
The HMC376LP3 / HMC376LP3E is ideal for:
• Cellular/3G Infrastructure
• Base Stations & Repeaters
• CDMA, W-CDMA, & TD-SCDMA
• Private Land Mobile Radio
• GSM/GPRS & EDGE
• UHF Reallocation Applications
Parameter Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 810 - 960 700 - 1000 MHz
Gain 12.5 14.5 11.5 14.5 dB
Gain Variation Over Temperature 0.005 0.01 0.005 0.01 dB / °C
Noise Figure 0.7 1.0 0.7 1.0 dB
Input Return Loss 13 14 dB
Output Return Loss 12 12 dB
Reverse Isolation 20 22 dB
Output Power for 1dB Compression (P1dB) 21.5 21 dBm
Saturated Output Power (Psat) 22 22 dBm
Output Third Order Intercept (IP3)
(-20 dBm Input Power per tone, 1 MHz tone spacing) 36 36 dBm
Supply Current (Idd) 73 73 mA
*Rbias resistor value sets current, see application circuit herein.