TLP291
2012-04-26
1
TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR
TLP291
Power Supplies
Programmable Controllers
Hybrid ICs
TLP291 consists of photo transistor, optically coupled to a gallium arsenide
infrared emitting diode. TLP291 is housed in the SO4 package, very small
and thin coupler.
Since TLP291 is guaranteed wide operating temperature (Ta=-55 to 110 ˚C)
and high isolation voltage (3750Vrms), it’s suitable for high-density surface
mounting applications such as small switching power supplies and
programmable controllers.
z Collector-Emitter Voltage : 80 V (min)
z Current Transfer Ratio : 50% (min)
Rank GB : 100% (min)
z Isolation Voltage : 3750 Vrms (min)
z Operation temperature: -55 to 110 ˚C
z UL recognized : UL1577, File No. E67349
z cUL approved : CSA Component Acceptance Service No.5A,
File No. 67349
z SEMKO aprroved: EN 60065: 2002, Approved no. 1200315
EN 60950-1: 2001, EN 60335-1: 2002,
Approved no. 1200315
z BSI approved : BS EN 60065: 2002, Approved no. 9036
: BS EN 60950-1: 2006, Approved no. 9037
z Option (V4)
VDE approved: EN 60747-5-5 Certificate, No. 40009347
Maximum operating insulation voltage: 707 Vpk
Highest permissible over-voltage: 6000 Vpk
(Note) When a EN 60747-5-5 approved type is needed,
please designate the “Option(V4)”
Construction Mechanical Rating
Creepage distance:5.0mm(min)
Clearance:5.0mm(min)
Insultion thickness:0.4mm(min)
TOSHIBA 11-3C1
Weight: 0.05 g (typ.)
1:ANODE
2:CATHODE
3:EMITTER
4:COLLECTOR
1
2
4
3
TLP291
Pin Configuration
Unit: mm
TLP291
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Current Transfer Ratio (CTR) Rank ( Unless otherwise specified, Ta = 25°C)
Note1: Specify both the part number and a rank in this format when ordering
(e.g.) rank GB: TLP291 (GB,E
For safety standard certification, however, specify the part number alone.
(e.g.)TLP291 (GB,E: TLP291
Current Transfer Ratio (%)
(IC / IF)
IF = 5 mA, VCE = 5 V, Ta = 25°C
TYPE Classification
(Note1)
Min Max
Marking of Classification
Blank 50 400
Blank, YE, Y+, GR, GB, G, G+,B
Rank Y 50 150 YE
Rank GR 100 300 GR
Rank GB 100 400 GB
Rank YH 75 150 Y+
Rank GRL 100 200 G
Rank GRH 150 300 G+
TLP291
Rank BLL 200 400 B
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Absolute Maximum Ratings (Note)( Unless otherwise specified, Ta = 25°C)
CHARACTERISTIC SYMBOL
NOTE RATING
UNIT
Input forward current IF 50 mA
Input forward current derating (Ta≥90°C) ∆IF /ΔTa -1.5 mA /°C
Input forward current (pulsed ) IFP (Note 2) 1 A
Input reverse voltage VR 5 V
Input power dissipation PD 100 mW
Input power dissipation derating (Ta ≥ 90°C) ΔPD/ΔTa -3.0 mW/°C
LED
Junction temperature Tj 125 °C
Collector-emitter voltage VCEO 80 V
Emitter-collector voltage VECO 7 V
Collector current IC 50 mA
Collector power dissipation PC 150 mW
Collector power dissipation derating(Ta≥25°C) ∆PC /ΔTa -1.5 mW /°C
DETECTOR
Junction temperature Tj 125 °C
Operating temperature range Topr -55 to 110 °C
Storage temperature range Tstg -55 to 125 °C
Lead soldering temperature Tsol 260 (10s) °C
Total package power dissipation PT 200 mW
Total package power dissipation derating(Ta≥25°C) ∆PT /ΔTa -2.0 mW /°C
Isolation voltage BVS (Note3) 3750
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note2: Pulse width ≤ 100μs, frequency 100Hz
Note3: AC, 1 minute, R.H.≤60%, Device considered a two terminal device: LED side pins shorted together and
DETECTOR side pins shorted together.
Electrical Characteristics (Unless otherwise specified, Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT
Input forward voltage VF I
F = 10 mA 1.1 1.25 1.4 V
Input reverse current IR V
R = 5 V - - 5 μA
LED
Input capacitance CT V = 0 V, f = 1 MHz - 30 - pF
Collector-emitter breakdown voltage V(BR) CEO I
C = 0.5 mA 80 - -
V
Emitter-collector breakdown voltage V(BR) ECO I
E = 0.1 mA 7 - -
V
VCE = 48 V - 0.01 0.08 μA
Dark current ICEO
VCE = 48 V, Ta = 85°C - 2 50 μA
DETECTOR
Collector-emitter capacitance CCE V = 0 V, f = 1 MHz - 10 - pF
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Coupled Electrical Characteristics (Unless otherwise specified, Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT
50 - 400
Current transfer ratio IC / IF
IF = 5 mA, VCE = 5 V
Rank GB 100 - 400
%
- 60 -
Saturated current transfer ratio IC / IF (sat)
IF = 1 mA, VCE = 0.4 V
Rank GB 30 - - %
IC = 2.4 mA, IF = 8 mA - - 0.3
- 0.2 -
Collector-emitter saturation voltage VCE (sat) IC = 0.2 mA, IF = 1 mA
Rank GB - - 0.3
V
OFF-state collector current IC (off) VF = 0.7 V, VCE = 48 V - - 10 μA
Isolation Characteristics (Unless otherwise specified, Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT
Total capacitance (input to output) CS VS = 0 V, f = 1 MHz - 0.8 - pF
Isolation resistance RS VS = 500 V, R.H.≤60% 1×1012 1014 - Ω
AC , 1 minute 3750 - -
AC , 1 second, in OIL - 10000 - Vrms
Isolation voltage BVS
DC , 1 minute, in OIL - 10000 - Vdc
Switching Characteristics (Unless otherwise specified, Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT
Rise time tr - 4 -
Fall time tf - 7 -
Turn-on time ton - 7 -
Turn-off time toff
VCC = 10 V, IC = 2 mA
RL = 100Ω
- 7 -
μs
Turn-on time ton - 2 -
Storage time ts - 30 -
Turn-off time toff
RL = 1.9 kΩ (Fig.1)
VCC = 5 V, IF = 16 mA
- 60 -
μs
(Fig.1) Switching Time Test Circuit
ton toff
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IF-Ta PC-Ta
Input forward current I F (mA)
0
20
40
60
80
100
-20 0 20 40 60 80 100 120
Collector power dissipation PC (mW)
0
20
40
60
80
100
120
140
160
-20 0 20 40 60 80 100 120
Ambient temperature Ta (˚C) Ambient temperature Ta (˚C)
IFP-DR IF-VF
Input forward current (pulsed)
IFP (mA)
Input forward current IF (mA)
0.1
1
10
100
0.6 0.8 1 1.2 1.4 1.6 1.8 2
Duty cycle ratio DR Input forward voltage VF (V)
∆VF/∆Ta- IF IFP - VFP
Input forward current derating
ΔVF /ΔTa (mV/°C)
-3.2
-2.8
-2.4
-2
-1.6
-1.2
-0.8
-0.4
0.1 1 10 100
Input forward current (pulsed) IFP (mA)
1
10
100
1000
0.6 1 1.4 1.8 2.2 2.6 3 3.4
Input forward current IF (mA) Input forward voltage (pulsed) VFP (V)
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
110˚C
85˚C
50˚C
25˚C
0˚C
-25˚C
-55˚C
Pules width ≤100μs
Ta=2 5˚C
10
30
50
100
1000
300
500
3000
10-3 10-2 10-1 100
Pulse width ≤10μs
Repeative frequency=100Hz
Ta=2 5°C
(Note) This curve shows
the maximum limit to the
input forward current.
(Note) This curve shows the
maximum limit to the collector
power dissipation.
(Note) This curve shows the
maximum limit to the input
forward current (pulsed).
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IC-VCE
IC-VCE
Collector current IC (mA)
Collector current IC (mA)
0
5
10
15
20
25
30
0 0.2 0.4 0.6 0.8 1
Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V)
IC-IF ICEO-Ta
Collector current IC (mA)
0.1
1
10
100
0.1 1 10 100
Dark current ICEO (μA)
0.0001
0.001
0.01
0.1
1
10
0 20 40 60 80 100 120
Input forward voltage IF (mA) Ambient temperature Ta (°C)
IC/IF -IF
Current transfer ratio IC / IF (%)
10
100
1000
0.1 1 10 100
Input forward current IF (mA)
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
0
10
20
30
40
50
0246810
5
10
50
30
20
15
Ta=2 5˚C
VCE=10V
VCE=5V
VCE=0.4V
VCE=10V
VCE=5V
VCE=0.4V
24V
10V
5V
VCE=48V
IF=2mA
IF=5mA
10
15
20
30
50
P
C
(max)
Ta=2 5˚C
Ta=2 5˚C
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VCE(sat) - Ta IC - Ta
Collector-emitter saturation voltage
VCE(sat) (V)
0.00
0.04
0.08
0.12
0.16
0.20
0.24
0.28
-60 -40 -20 0 20 40 60 80 100 120
Collector current I
C (mA)
0.1
1
10
100
-60 -40 -20 0 20 40 60 80 100 120
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Switching time - RL Switching time - Ta
Switching time (μs)
1
10
100
1000
10000
110100
Switching time (μs)
0.1
1
10
100
1000
-60 -40 -20 0 20 40 60 80 100 120
Load resistance RL (kΩ) Ambient temperature Ta (°C)
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
IF=8mA, IC=2.4mA
IF=1mA, IC=0.2mA
VCE=5V
I
F
=0.5m
A
5
1
10
25
toff
Ta=2 5˚C
IF=16mA
VCC=5V
IF=16mA
VCC=5V
RL=1.9kΩ
ts
ton
toff
ts
Ton
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Soldering and Storage
1. Soldering
1.1 Soldering
When using a soldering iron or medium infrared ray/hot air reflow, avoid a rise in device temperature as
much as possible by observing the following conditions.
1) Using solder reflow
·Temperature profile example of lead (Pb) solder
·Temperature profile example of using lead (Pb)-free solder
Reflow soldering must be performed once or twice.
The mounting should be completed with the interval from the first to the last mountings being 2 weeks.
2) Using solder flow (for lead (Pb) solder, or lead (Pb)-free solder)
· Please preheat it at 150°C between 60 and 120 seconds.
· Complete soldering within 10 seconds below 260°C. Each pin may be heated at most once.
3) Using a soldering iron
Complete soldering within 10 seconds below 260°C, or within 3 seconds at 350°C. Each pin may
be heated at most once.
Time (s)
(°C)
240
210
160
60 to 120s less than 30s
Package surface temperature
140
Time (s)
(°C)
260
230
190
60 to 120s
30 to 50s
180
Package surface temperature
This profile is based on the device’s
maximum heat resistance guaranteed
value.
Set the preheat temperature/heating
temperature to the optimum temperature
corresponding to the solder paste
type used by the customer within the
described profile.
This profile is based on the device’s
maximum heat resistance guaranteed
value.
Set the preheat temperature/heating
temperature to the optimum temperature
corresponding to the solder paste
type used by the customer within the
described profile.
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2. Storage
1) Avoid storage locations where devices may be exposed to moisture or direct sunlight.
2) Follow the precautions printed on the packing label of the device for transportation and storage.
3) Keep the storage location temperature and humidity within a range of 5°C to 35°C and 45% to 75%,
respectively.
4) Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty
conditions.
5) Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during
storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the
solderability of the leads.
6) When restoring devices after removal from their packing, use anti-static containers.
7) Do not allow loads to be applied directly to devices while they are in storage.
8) If devices have been stored for more than two years under normal storage conditions, it is recommended
that you check the leads for ease of soldering prior to use.
TLP291
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EN 60747-5-5 Option:(V4)
Types : TLP291
Type designations for “option: (V4)”, which are tested under EN 60747 requirements.
(e.g.): TLP291 (V4GB-TP,E V4 : EN 60747 option
GB : CTR rank type
TP : Standard tape & reel type
E : [[G]]/RoHS COMPATIBLE (Note4 )
Note: Use TOSHIBA standard type number for safety standard application.
(e.g.): TLP291(V4GB-TP,E Æ TLP291
Note4: Please contact your Toshiba sales representative for details on environmental information such
as the product’s RoHS compatibility.
RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and
electronics equipment.
EN 60747 Isolation Characteristics
Description Symbol Rating Unit
Application classification
for rated mains voltage ≤ 150Vrms
for rated mains voltage ≤ 300Vrms
I-IV
I-III
-
Climatic classification 55 / 110 / 21 -
Pollution degree 2 -
Maximum operating insulation voltage VIORM 707 Vpk
Input to output test voltage, Method A
Vpr=1.5 × VIORM, type and sample test
tp=10s, partial discharge<5pC
Vpr 1060 Vpk
Input to output test voltage, Method B
Vpr=1.875 × VIORM, 100% production test
tp=1s, partial discharge<5pC
Vpr 1325 Vpk
Highest permissible overvoltage
(transient overvoltage, tpr=60s) VTR 6000 Vpk
Safety limiting values (max. permissible ratings in case of fault,
also refer to thermal derating curve)
current (input current: IF, Psi=0mW)
power (output or total power dissipation)
temperature
Isi
Psi
Tsi
250
400
150
mA
mW
°C
Insulation resistance
VIO=500V, Ta=Tsi
Rsi
>
=
109 Ω
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Insulation Related Specifications
Minimum creepage distance Cr 5.0mm
Minimum clearance Cl 5.0mm
Minimum insulation thickness ti 0.4mm
Comparative tracking index CTl 175
1. If a printed circuit is incorporated, the creepage distance and clearance may be reduced below this value.
(e.g. at a standard distance between soldering eye centers of 3.5mm).
If this is not permissible, the user shall take suitable measures.
2. This photocoupler is suitable for ‘safe electrical isolation’ only within the safety limit data.
Maintenance of the safety data shall be ensured by means of protective circuit.
VDE test sign: Marking on product
for EN 60747
: Marking on packing
for EN 60747
Marking Example: TLP291
V
V
DE
1pin mark
CTR rank mark
Lot No.
Type
V
Country of origin
e.g.) J; Japan
Option(V4) mark
Process Lot No.
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Figure
1 Partial discharge measurement procedure according to EN 60747
Destructive test for qualification and sampling tests.
Method A
(for type and sampling tests,
destructive tests)
t1, t2
t3, t4
tp(Measuring time for
partial discharge)
tb
tini
VVINITIAL(6kV)
Vpr(1060V)
VIORM(707V)
0
t1tini
t3
t2
tP
tb
t4
t
= 1 to 10 s
= 1 s
= 10 s
= 12 s
= 60 s
tP
Vpr(1325V )
VIORM(707V )
V
t
t3t4
tb
Figure 2 Partial discharge measurement procedure according to EN 60747
Non-destructive test for100% inspection.
Method B
(for sample test, non-
destructive test)
t3, t4
tp(Measuring time for
partial discharge)
tb
= 0.1 s
= 1 s
= 1.2 s
Figure
3 Dependency of maximum safety ratings on ambient temperature
500
400
300
200
100
0
0 25 50 75 100 125 150 175
500
400
300
200
100
0
Ta (°C)
Æ Psi
Isi Å
Isi
(mA)
Psi
(
mW
)
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RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
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including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
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