Document Number: 93691 For technical questions, contact: diodes-tech@vishay.com www.vishay.com
Revision: 19-Jun-08 1
Surface Mountable
Phase Control SCR, 10 A
10TTS08S High Voltage Series
Vishay High Power Products
DESCRIPTION/FEATURES
The 10TTS08S High Voltage Series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
Typical applications are in input rectification (soft start) and
these products are designed to be used with Vishay HPP
input diodes, switches and output rectifiers which are
available in identical package outlines.
This product has been designed and qualified for industrial
level.
Note
•T
A = 55 °C, TJ = 125 °C, footprint 300 mm2
PRODUCT SUMMARY
VT at 6.5 A < 1.15 V
ITSM 140 A
VRRM 800 V
(G) 3
2
(A)
1 (K)
D
2
PAK
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
NEMA FR-4 or G-10 glass fabric-based epoxy
with 4 oz. (140 µm) copper 2.5 3.5
A
Aluminum IMS, RthCA = 15 °C/W 6.3 9.5
Aluminum IMS with heatsink, RthCA = 5 °C/W 14.0 18.5
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV) Sinusoidal waveform 6.5
A
IRMS 10
VRRM/VDRM 800 V
ITSM 140 A
VT6.5 A, TJ = 25 °C 1.15 V
dV/dt 150 V/µs
dI/dt 100 A/µs
TJRange - 40 to 125 °C
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
VDRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
IRRM/IDRM
AT 125 °C
mA
10TTS08S 800 800 1.0
www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 93691
2Revision: 19-Jun-08
10TTS08S High Voltage Series
Vishay High Power Products Surface Mountable
Phase Control SCR, 10 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current IT(AV) TC = 112 °C, 180° conduction half sine wave 6.5
A
Maximum RMS on-state current IT(RMS) 10
Maximum peak, one-cycle,
non-repetitive surge current ITSM
10 ms sine pulse, rated VRRM applied, TJ = 125 °C 120
10 ms sine pulse, no voltage reapplied, TJ = 125 °C 140
Maximum I2t for fusing I2t10 ms sine pulse, rated VRRM applied, TJ = 125 °C 72 A2s
10 ms sine pulse, no voltage reapplied, TJ = 125 °C 100
Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied, TJ = 125 °C 1000 A2s
Maximum on-state voltage drop VTM 6.5 A, TJ = 25 °C 1.15 V
On-state slope resistance rtTJ = 125 °C 17.3 mΩ
Threshold voltage VT(TO) 0.85 V
Maximum reverse and direct leakage current IRM/IDM
TJ = 25 °C VR = Rated VRRM/VDRM
0.05
mA
TJ = 125 °C 1.0
Typical holding current IHAnode supply = 6 V, resistive load, initial IT = 1 A 30
Maximum latching current ILAnode supply = 6 V, resistive load 50
Maximum rate of rise of off-state voltage dV/dt TJ = 25 °C 150 V/µs
Maximum rate of rise of turned-on current dI/dt 100 A/µs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM 8.0 W
Maximum average gate power PG(AV) 2.0
Maximum peak positive gate current +IGM 1.5 A
Maximum peak negative gate voltage -VGM 10 V
Maximum required DC gate current to trigger IGT
Anode supply = 6 V, resistive load, TJ = - 65 °C 20
mAAnode supply = 6 V, resistive load, TJ = 25 °C 15
Anode supply = 6 V, resistive load, TJ = 125 °C 10
Maximum required DC gate
voltage to trigger VGT
Anode supply = 6 V, resistive load, TJ = - 65 °C 1.2
V
Anode supply = 6 V, resistive load, TJ = 25 °C 1
Anode supply = 6 V, resistive load, TJ = 125 °C 0.7
Maximum DC gate voltage not to trigger VGD TJ = 125 °C, VDRM = Rated value 0.2
Maximum DC gate current not to trigger IGD 0.1 mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical turn-on time tgt TJ = 25 °C 0.8
µsTypical reverse recovery time trr TJ = 125 °C 3
Typical turn-off time tq100
Document Number: 93691 For technical questions, contact: diodes-tech@vishay.com www.vishay.com
Revision: 19-Jun-08 3
10TTS08S High Voltage Series
Surface Mountable
Phase Control SCR, 10 A Vishay High Power Products
Note
(1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg - 40 to 125 °C
Soldering temperature TSFor 10 s (1.6 mm from case) 240
Maximum thermal resistance,
junction to case RthJC DC operation 1.5
°C/W
Typical thermal resistance,
junction to ambient (PCB mount) RthJA (1) 40
Approximate weight 2g
0.07 oz.
Marking device Case style D2PAK (SMD-220) 10TTS08S
www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 93691
4Revision: 19-Jun-08
10TTS08S High Voltage Series
Vishay High Power Products Surface Mountable
Phase Control SCR, 10 A
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
105
110
115
120
125
01234567
30°
60°
90°
120°
180°
Maximum Allowable Case TemperatureC)
Cond uct ion Angle
Average On-state Current (A)
10TTS08
R (DC) = 1.5 K/W
thJC
105
110
115
120
125
024681012
DC
30°
60°
90°
120°
18
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
10TTS08
R (DC) = 1.5 K/W
thJC
0
1
2
3
4
5
6
7
8
01234567
RMS Limit
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
180°
120°
90°
60°
30°
10TTS08
T = 125°C
J
0
2
4
6
8
10
12
024681012
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Maximum Average On-state Power Loss (W)
Averag e On-state Current (A)
10TTS08
T = 125°C
J
60
70
80
90
100
110
120
130
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
Peak Half Sine Wave On-state Current (A)
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
10TTS08
50
60
70
80
90
100
110
120
130
140
150
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T = 125
°C
No Voltage Reapplied
Rated V Reapplied
RRM
J
10TTS08
Document Number: 93691 For technical questions, contact: diodes-tech@vishay.com www.vishay.com
Revision: 19-Jun-08 5
10TTS08S High Voltage Series
Surface Mountable
Phase Control SCR, 10 A Vishay High Power Products
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
1
10
100
1000
0.5 1 1.5 2 2.5 3 3.5
T = 25°C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T = 125°C
J
10TTS08
0.01
0.1
1
10
0.0001 0.001 0. 01 0.1 1
Square Wave Pulse Duration (s)
Steady State Value
(DC Operation)
Single Pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
thJC
Transient Thermal Impedance Z (°C/W)
10TTS08
www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 93691
6Revision: 19-Jun-08
10TTS08S High Voltage Series
Vishay High Power Products Surface Mountable
Phase Control SCR, 10 A
ORDERING INFORMATION TABLE
1- Current rating, RMS value
2- Circuit configuration:
T = Single thyristor
T = TO-220AC
S = Converter grade
3- Package:
4- Type of silicon:
5- Voltage code x 100 = VRRM
6- S = TO-220 D2PAK (SMD-220) version
7- Tape and reel option:
8- None = Standard production
TRL = Left reel
TRR = Right orientation reel
PbF = Lead (Pb)-free
Device code
51324678
10 T T S 08 S TRL -
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95046
Part marking information http://www.vishay.com/doc?95054
Packaging information http://www.vishay.com/doc?95032
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
Disclaimer
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Vishay
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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