MCC44-08io1B
3 1 2
6 57 4
Phase leg
Thyristor Module
Part number
MCC44-08io1B
Backside: isolated
TAV
T
V V1.34
RRM
49
800
=
V=V
I=A
2x
Features / Advantages: Applications: Package:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Direct Copper Bonded Al2O3-ceramic
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
TO-240AA
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: V~
4800
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
Disclaimer Notice
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions. 20200701dData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved
MCC44-08io1B
V = V
kA²s
kA²s
kA²s
kA²s
Symbol
Definition
Ratings
typ.
max.
I
V
IA
V
T
1.34
R0.53 K/W
min.
49
VV
100T = 25°C
VJ
T = °C
VJ
mA5V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
85
P
tot
180 WT = 25°C
C
100
800
forward voltage drop
total power dissipation
Conditions
1.75
T = 25°C
VJ
125
V
T0
V0.85T = °C
VJ
125
r
T
5.3 mΩ
V1.34T = °C
VJ
I = A
T
V
100
1.80
I = A200
I = A200
threshold voltage
slope resistance for power loss calculation only
µA
125
VV800T = 25°C
VJ
IA77
P
GM
Wt = 30 µs 10
max. gate power dissipation
P
T = °C
C
125
Wt = 5
P
P
GAV
W0.5
average gate power dissipation
C
J
54
junction capacitance
V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
125
I²t T = 45°C
value for fusing
T = °C125
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
125
1.15
1.24
4.80
4.63
kA
kA
A
kA
980
1.06
6.62
6.40
800
300 µs
RMS forward current
T(RMS)
TAV
180° sine
average forward current
(di/dt)
cr
A/µs
150repetitive, I =T
VJ
= 125 °C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage
V = 6 V T = °C25
(dv/dt) T = 125°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
I A; V = ⅔ V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
150 A
T
P
G
= 0.45
di /dt A/µs;
G
=0.45
DRM
cr
V = ⅔ V
DRM
GK
1000
1.5 V
T = °C-40
VJ
I
GT
gate trigger current
V = 6 V T = °C25
DVJ
100 mA
T = °C-40
VJ
1.6 V
200 mA
V
GD
gate non-trigger voltage
T = °C
VJ
0.2 V
I
GD
gate non-trigger current
10 mA
V = ⅔ V
D DRM
125
latching current
T = °C
VJ
450 mA
I
L
25t µs
p
= 10
I A;
G
= 0.45 di /dt A/µs
G
= 0.45
holding current
T = °C
VJ
200 mA
I
H
25V = 6 V
D
R = ∞
GK
gate controlled delay time
T = °C
VJ
2 µs
t
gd
25
I A;
G
= 0.45 di /dt A/µs
G
= 0.45
V = ½ V
D DRM
turn-off time
T = °C
VJ
150 µs
t
q
di/dt = A/µs10 dv/dt = V/µs20
V =
R
100 V; I A;
T
= 120 V = ⅔ V
DRM
tµs
p
= 200
non-repet., I = 49 A
T
100
R
thCH
thermal resistance case to heatsink
K/W
Thyristor
900
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
R/D
reverse current, drain current
T
T
R/D
R/D
200
0.2
IXYS reserves the right to change limits, conditions and dimensions. 20200701dData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved
MCC44-08io1B
Ratings
MCMA65P1200TA TO-240AA-1B 1200
Package
T
op
°C
M
D
Nm4
mounting torque
2.5
T
VJ
°C125
virtual junction temperature
-40
Weight g81
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
M
T
Nm4
terminal torque
2.5
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
13.0 9.7
16.0 16.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
200 A
per terminal
100-40
terminal to terminal
TO-240AA
Similar Part Package Voltage class
MCMA50P1200TA TO-240AA-1B 1200
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
MCC44-08io1B 452890Box 36MCC44-08io1BStandard
4800
ISOL
T
stg
°C125
storage temperature
-40
4000
threshold voltage
V0.85
mΩ
V
0 max
R
0 max
slope resistance *
4.1
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Thyristor
°C
* on die level
125
IXYS reserves the right to change limits, conditions and dimensions. 20200701dData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved
MCC44-08io1B
3 1 2
6 57 4
Outlines TO-240AA
IXYS reserves the right to change limits, conditions and dimensions. 20200701dData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved
MCC44-08io1B
I
TSM
I
FSM
[A]
1200
1000
800
600
400
200
0
t [s]
10
-3
10
-2
10
-1
10
0
10
1
Fig. 1 Surge overload current
I
TSM
, I
FSM
: Crest value, t: duration
T
VJ
= 45°C
T
VJ
= 125°C
50 Hz, 80% V
RRM
V
R
= 0 V
t [ms]
I
2
t
[A
2
s]
10
4
10
3
1 2 3 6 8 10
T
VJ
= 45°C
T
VJ
= 125°C
Fig. 2 I
2
t versus time (1-10 ms) Fig. 3 Maximum forward current
at case temperature
Fig. 4 Power dissipation vs. onstate current and ambient temperature (per thyristor/diode)
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
100
80
60
40
20
0
0 50 100 150
I
TAVM
[A]
T
C
[°C]
DC
180° sin
120°
60°
30°
DC
180° sin
120°
60°
30°
0 50 100 150
T
A
[°C]I
TAVM
, I
FAVM
[A]
0 20 40 60 80
120
100
80
60
40
20
0
P
T
[W]
R
thJA
[K/W]
1
1.5
2
2.5
3
4
5
6
R
thKA
[K/W]
0.1
0.15
0.2
0.25
0.3
0.4
0.5
0.6
0 50 100 150
T
A
[°C]I
dAVM
[A]
0 50 100
P
tot
[W]
100
0
200
300
400
500
Circuit
B6
3x MCC44 or
3x MCD44
I
G
[mA]
V
G
[V]
Fig. 5 Gate trigger characteristics
10
0
10
1
10
2
10
3
10
4
0.1
1
10
1: I
GT
, T
VJ
= 125°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
4: P
GAV
= 0.5 W
5: P
GM
= 5 W
6: P
GM
= 10 W
I
GD
, T
VJ
= 125°C
3
4
2
1
56
10 100 1000
1
10
100
1000
Limit
typ.
T
VJ
= 25°C
I
G
[mA]
t
gd
[µs]
Fig. 7 Gate trigger delay time
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20200701dData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved
MCC44-08io1B
I
RMS
[A]
P
tot
[W]
T
A
[°C]
R
thJC
for various conduction angles d:
DC 0.53
180° 0.55
120° 0.58
60° 0.60
30° 0.62
Constants for Z
thJC
calculation:
1 0.015 0.0035
2 0.026 0.0200
3 0.489 0.1950
R
thJK
for various conduction angles d:
DC 0.73
180° 0.75
120° 0.78
60° 0.80
30° 0.82
Constants for Z
thJK
calculation:
1 0.015 0.0035
2 0.026 0.0200
3 0.489 0.0195
4 0.200 0.6800
R
thJA
[KW]
0.1
0.15
0.2
0.25
0.3
0.4
0.5
0.6
Circuit
W3
3x MCC44 or
3x MCD44
5
0
0
300
200
100
0
400
0 20 40 60 80 100 0 50 100 150
Fig. 8 Three phase AC-controller: Power dissipation versus RMS output current
and ambient temperature
Fig. 9 Transient thermal impedance junction to case (per thyristor)
0.8
0.6
0.2
0
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
0.4
30°
60°
120°
180°
DC
30°
60°
120°
180°
DC
Fig. 10 Transient thermal impedance junction to heatsink (per thyristor)
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
1.0
0.8
0.6
0.2
0
0.4
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20200701dData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved