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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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April 2017
FFP30S60S — STEALTH™ II Diode
©2017 Semiconductor Components Industries, LLC
FFP30S60S • Rev. 1.0
www.fairchildsemi.com
www.onsemi.com
1
FFP30S60S
30 A, 600 V STEALTHTM II Diode
Features
• Stealth Recovery trr = 40 ns (@ IF = 30 A)
• Max Forward Voltage, VF = 2.6 V (@ TC = 25°C)
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
Applications
• General Purpose
• SMPS, Power Switching Circuits
• Boost Diode in Continuous Mode Power Factor Corrections
Description
The FFP30S60S is a STEALTH™ II diode with soft recovery
characteristics. It is silicon nitride passivated ion-implanted epi-
taxial planar construction.
This device is intended for use as freewheeling of boost diode in
switching power supplies and other power switching applica-
tions. Their low stored charge and hyperfast soft recovery mini-
mize ringing and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Absolute Maximum Ratings TC = 25oC unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Rating Unit
VRRM Peak Repetitive Reverse Voltage 600 V
VRWM Working Peak Reverse Voltage 600 V
VRDC Blocking Voltage 600 V
IF(AV) Average Rectified Forward Current @ TC = 103oC 30 A
IFSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave 300 A
TJ, TSTG Operating and Storage Temperature Range -65 to +175 oC
Symbol Parameter Max. Unit
RJC Maximum Thermal Resistance, Junction to Case 1.1 oC/W
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FFP30S60STU F30S60S TO-220-2L Tube N/A N/A 50
1. Cathode 2. Anode
1. Cathode 2. Anode
TO-220-2L
Pin Assigments
FFP30S60S — STEALTH™ II Diode
2
©2017 Semiconductor Components Industries, LLC
FFP30S60S • Rev. 1.0
www.fairchildsemi.com
www.onsemi.com
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol Parameter Min. Typ. Max. Unit
VFM1IF = 30 A
IF = 30 A
TC = 25oC
TC = 125oC
-
-
2.1
1.6
2.6
-V
IRM1VR = 600 V
VR = 600 V
TC = 25oC
TC = 125oC
-
-
-
-
100
500 A
trr IF = 1 A, diF/dt = 100 A/s, VR = 30 V TC = 25oC - 25 35 ns
trr
Irr
S factor
Qrr
IF = 30 A, diF/dt = 200 A/s, VR = 390 V TC = 25oC
-
-
-
-
28
2.4
0.9
34
40
-
-
-
ns
A
nC
trr
Irr
S factor
Qrr
IF = 30 A, diF/dt = 200 A/s, VR = 390 V TC = 125oC
-
-
-
-
75
6.3
0.9
236
-
-
-
-
ns
A
nC
WAVL Avalanche Energy ( L = 40 mH) 20 - - mJ
Test Circuit and Waveforms
Notes:
1: Pulse: Test Pulse width = 300s, Duty Cycle = 2%
Figure 1. Diode Reverse Recovery Test Circuit & Waveform
Figure 2. Unclamped Inductive Switching Test Circuit & Waveform
FFP30S60S — STEALTH™ II Diode
3
©2017 Semiconductor Components Industries, LLC
FFP30S60S • Rev. 1.0
www.fairchildsemi.com
www.onsemi.com
Typical Performance Characteristics
Figure 3. Typical Forward Voltage Drop Figure 4. Typical Reverse Current
vs. Forward Current vs. Reverse Voltage
Figure 5. Typical Junction Capacitance Figure 6. Typical Reverse Recovery Time
vs. diF/dt
Figure 7. Typical Reverse Recovery Figure 8. Forward Current Derating Curve
Current vs. diF/dt
012345
1
10
100
75oC
TC = 125oC
Forward Current, IF [A]
Forward Voltage, VF [V]
25oC
200
100 200 300 400 500 600
0.01
0.1
1
10
100
1000
TC = 125oC
TC = 25oC
TC = 75oC
Reverse Current , IR [A]
Reverse Voltage, VR [V]
10
0.1 1 10 100
0
70
140
210
280
350
Typical Capacitance
at 0V = 271 pF
Capacitances , Cj [pF]
Reverse Voltage, VR [V]
100 150 200 250 300
20
40
60
80
100
TC = 75oC
TC = 25oC
TC = 125oC
Reverse Recovery Time, trr [ns]
di
F
/dt [A/s]
100 150 200 250 300
0
2
4
6
8
10
TC = 125oC
TC = 25oC
TC = 75oC
Reverse Recovery Current, Irr [A]
di
F
/dt [A/s]
FFP30S60S — STEALTH™ II Diode
4
©2017 Semiconductor Components Industries, LLC
FFP30S60S • Rev. 1.0
www.fairchildsemi.com
www.onsemi.com
Typical Performance Characteristics
Figure 9. Normalized Maximum Transient Thermal Impedance
FFP30S60S — STEALTH™ II Diode
5
©2017 Semiconductor Components Industries, LLC
FFP30S60S • Rev. 1.0
www.fairchildsemi.com
www.onsemi.com
Mechanical Dimensions
Figure 10. TO-220 2L - 2LD,TO220,JEDEC TO-220 VARIATION AC
ON Semiconductor and the ON Logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage
may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON
Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising
out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is
responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any
support or applications information provided by
ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance
may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey
any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or
any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer
purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal
injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON
Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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