NVMFS6B85NL Power MOSFET 100 V, 46 mW, 19 A, Single N-Channel Features * * * * * * Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6B85NLWF - Wettable Flank Option for Enhanced Optical Inspection AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX 46 mW @ 10 V 100 V Symbol Value Unit Drain-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGS 16 V ID 19 A Continuous Drain Current RqJC (Notes 1, 2, 3) TC = 25C Power Dissipation RqJC (Notes 1, 2) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State TC = 100C TC = 25C Pulsed Drain Current PD TC = 100C TA = 25C Power Dissipation RqJA (Notes 1 & 2) 14 Steady State TA = 100C TA = 25C G (4) W 42 S (1,2,3) A 5.6 PD W 3.5 93 TJ, Tstg -55 to + 175 C IS 32 A Single Pulse Drain-to-Source Avalanche Energy (IL(pk) = 1.7 A) EAS 116 Lead Temperature for Soldering Purposes (1/8 from case for 10 s) TL Source Current (Body Diode) MARKING DIAGRAM 1.75 IDM Operating Junction and Storage Temperature N-CHANNEL MOSFET 4.0 TA = 100C TA = 25C, tp = 10 ms D (5,6) 21 ID 19 A 72 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter ID MAX A mJ C 260 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. D 1 DFN5 (SO-8FL) CASE 488AA STYLE 1 S S S G D 6B85xx AYWZZ D D 6B85NL = NVMFS6B85NL 6B85LW = NVMFS6B85NLWF A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Junction-to-Case - Steady State RqJC 3.6 Junction-to-Ambient - Steady State (Note 2) RqJA 43 Unit ORDERING INFORMATION C/W See detailed ordering, marking and shipping information on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface-mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. (c) Semiconductor Components Industries, LLC, 2016 August, 2016 - Rev. 0 1 Publication Order Number: NVMFS6B85NL/D NVMFS6B85NL ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 100 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current V 64 VGS = 0 V, VDS = 80 V mV/C TJ = 25C 10 TJ = 125C 250 IGSS VDS = 0 V, VGS = 16 V VGS(TH) VGS = VDS, ID = 250 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain-to-Source On Resistance RDS(on) 1.2 2.4 -5.2 VGS = 10 V VGS = 4.5 V ID = 10 A V mV/C 37 46 55 72 mW CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 480 VGS = 0 V, f = 1 MHz, VDS = 25 V 170 pF 15 VGS = 4.5 V, VDS = 50 V; ID = 10 A 3.8 Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD 1.1 Plateau Voltage VGP 4.0 td(ON) 6.9 7.9 1.1 VGS = 10 V, VDS = 50 V; ID = 10 A nC 2.4 V SWITCHING CHARACTERISTICS (Note 5) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDS = 50 V, ID = 10 A, RG = 2.5 W tf 66.9 ns 12.5 55.9 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25C 0.88 TJ = 125C 0.76 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 10 A 1.2 V 39.4 VGS = 0 V, dIS/dt = 100 A/ms, IS = 10 A QRR 22.7 ns 16.7 40 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVMFS6B85NL TYPICAL CHARACTERISTICS 20 VGS = 10 V to 5 V 4.5 V 18 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 20 15 3.6 V 3.4 V 10 3.2 V 5 3.0 V 2.8 V 16 14 12 10 8 TJ = 25C 6 4 2 0 TJ = 125C 1.0 0.5 2.0 1.5 3.0 2.5 0 4 5 Figure 2. Transfer Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) Figure 1. On-Region Characteristics 48 46 44 42 40 38 36 34 32 5 6 7 8 10 9 VGS, GATE-TO-SOURCE VOLTAGE (V) 70 65 TJ = 25C 60 VGS = 4.5 V 55 50 45 40 VGS = 10 V 35 30 5 10 20 15 ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. Gate-to-Source Voltage Figure 4. On-Resistance vs. Drain Current and Gate Voltage 2.4 2.2 3 2 VGS, GATE-TO-SOURCE VOLTAGE (V) ID = 10 A TJ = 25C 4 1 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 50 10K TJ = 150C ID = 10 A VGS = 10 V 2.0 IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN-TO- SOURCE RESISTANCE TJ = -55C 0 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) VDS = 10 V 1.8 1.6 1.4 1.2 1.0 1K TJ = 125C 100 TJ = 85C 10 0.8 0.6 -50 -25 1 0 25 50 75 100 125 150 175 5 15 25 35 45 55 65 75 85 95 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage www.onsemi.com 3 NVMFS6B85NL TYPICAL CHARACTERISTICS VGS, GATE-TO-SOURCE VOLTAGE (V) 1000 Ciss C, CAPACITANCE (pF) Coss 100 Crss 10 VGS = 0 V TJ = 25C f = 1 MHz 1 0 10 20 30 40 50 60 70 80 90 6 5 Qgd Qgs 4 3 TJ = 25C VDS = 50 V ID = 10 A 2 1 0 1 0 2 3 4 5 6 7 8 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source Voltage vs. Total Charge IS, SOURCE CURRENT (A) t, TIME (ns) 7 VDS, DRAIN-TO-SOURCE VOLTAGE (V) tr tf td(off) 10 td(on) VDS = 50 V ID = 10 A VGS = 4.5 V 1 1 10 TJ = 25C 10 TJ = 125C TJ = -55C 1 0.3 100 0.5 0.7 0.9 1.1 1.3 RG, GATE RESISTANCE (W) VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 VGS 10 V Single Pulse TC = 25C IPEAK, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 8 100 100 100 9 100 1000 1000 10 10 10 ms 1 RDS(on) Limit Thermal Limit Package Limit 0.1 0.1 1 10 500 ms 1 ms 10 ms 100 10 TJ(initial) = 25C TJ(initial) = 100C 1 0.1 0.0001 1000 0.001 VDS, DRAIN-TO-SOURCE VOLTAGE (V) TAV, TIME IN AVALANCHE (sec) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. IPEAK vs. TAV www.onsemi.com 4 0.01 NVMFS6B85NL TYPICAL CHARACTERISTICS 100 50% Duty Cycle R(t) (C/W) 10 1 20% 10% 5% 2% 1% NVMFS6B85NL5x6 SOFL PCB Cu Area 650 mm2 PCB Cu thk 2 oz 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Response DEVICE ORDERING INFORMATION Marking Package Shipping NVMFS6B85NLT1G 6B85NL DFN5 (Pb-Free) 1500 / Tape & Reel NVMFS6B85NLWFT1G 6B85LW DFN5 (Pb-Free, Wettable Flanks) 1500 / Tape & Reel NVMFS6B85NLT3G 6B85NL DFN5 (Pb-Free) 5000 / Tape & Reel NVMFS6B85NLWFT3G 6B85LW DFN5 (Pb-Free, Wettable Flanks) 5000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO-8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 --- 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ --- 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot " G", may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO-8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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