Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 4
1Publication Order Number:
MBRM140/D
MBRM140T1G,
NRVBM140T1G,
MBRM140T3G,
NRVBM140T3G
Surface Mount
Schottky Power Rectifier
POWERMITE
Power Surface Mount Package
The Schottky POWERMITE employs the Schottky Barrier
principle with a barrier metal and epitaxial construction that produces
optimal forward voltage drop−reverse current tradeoff. The advanced
packaging techniques provide for a highly efficient micro miniature,
space saving surface mount Rectifier. With its unique heatsink design,
the POWERMITE has the same thermal performance as the SMA
while being 50% smaller in footprint area, and delivering one of the
lowest height profiles, 1.1 mm in the industry. Because of its small
size, it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are AC−DC and
DC−DC converters, reverse battery protection, and “ORing” of
multiple supply voltages and any other application where performance
and size are critical.
Features
Low Profile − Maximum Height of 1.1 mm
Small Footprint − Footprint Area of 8.45 mm2
Low VF Provides Higher Efficiency and Extends Battery Life
Supplied in 12 mm Tape and Reel
Low Thermal Resistance with Direct Thermal Path of Die on
Exposed Cathode Heat Sink
ESD Ratings:
Human Body Model = 3B (> 16000 V)
Machine Model = C (> 400 V)
AEC−Q101 Qualified and PPAP Capable
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are Pb−Free*
Mechanical Characteristics:
POWERMITE is JEDEC Registered as D0−216AA
Case: Molded Epoxy
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 16.3 mg (Approximately)
Lead and Mounting Surface Temperature for Soldering Purposes:
260C Maximum for 10 Seconds
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES, 40 VOLTS
http://onsemi.com
Device Package Shipping†
MBRM140T1G POWERMITE
(Pb−Free)
3,000 /
Tape & Reel
MBRM140T3G POWERMITE
(Pb−Free)
12,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
POWERMITE
CASE 457
PLASTIC
CATHODE
ANODE
MARKING DIAGRAM
M = Date Code
BCJ = Device Code
G= Pb−Free Package
NRVBM140T1G POWERMITE
(Pb−Free)
3,000 /
Tape & Reel
NRVBM140T3G POWERMITE
(Pb−Free)
12,000 /
Tape & Reel
M
BCJG
12
MBRM140T1G, NRVBM140T1G, MBRM140T3G, NRVBM140T3G
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40 V
Average Rectified Forward Current
(At Rated VR, TC = 110C)
IO1.0
A
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 100 kHz, TC = 110C)
IFRM 2.0
A
Non−Repetitive Peak Surge Current
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
IFSM 50
A
Storage Temperature Tstg −55 to 150 C
Operating Junction Temperature TJ−55 to 125 C
Voltage Rate of Change
(Rated VR, TJ = 25C)
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Lead (Anode) (Note 1)
Thermal Resistance, Junction−to−Tab (Cathode) (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
Rtjl
Rtjtab
Rtja
35
23
277
C/W
1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 & 10
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 2), See Figure 2 VFTJ = 25C TJ = 85CV
(IF = 0.1 A)
(IF = 1.0 A)
(IF = 3.0 A)
0.36
0.55
0.85
0.30
0.515
0.88
Maximum Instantaneous Reverse Current (Note 2), See Figure 4 IRTJ = 25C TJ = 85CmA
(VR = 40 V)
(VR = 20 V)
0.5
0.15
25
18
2. Pulse Test: Pulse Width 250 ms, Duty Cycle 2%
IF
, INSTANTANEOUS FORWARD CURRENT (AMPS)
iF
, INSTANTANEOUS FORWARD CURRENT (AMPS)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
0.1
vF
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
10
1.0
VF
, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE
(VOLTS)
0.1
0.70.3 0.5 0.9
TJ = 85C
TJ = 125C
TJ = −40C
TJ = 25C
100
0.1
10
1.0
0.1
0.70.3 0.5 0.9
TJ = 85C
TJ = 125C
TJ = 25C
MBRM140T1G, NRVBM140T1G, MBRM140T3G, NRVBM140T3G
http://onsemi.com
3
IR, MAXIMUM REVERSE CURRENT (AMPS)
IR, REVERSE CURRENT (AMPS)
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
400
VR, REVERSE VOLTAGE (VOLTS)
10E−3
1.0E−3
100E−6
10E−6
1.0E−6
VR, REVERSE VOLTAGE (VOLTS)
10 20 30 400
100E−6
10E−6
10 20 30
TJ = 85C
TJ = 25C
TJ = 85C
TJ = 25C
100E−3
10E−3
1.0E−3
PFO, AVERAGE POWER DISSIPATION (WATTS)
IO, AVERAGE FORWARD CURRENT (AMPS)
Ipk/Io = 5
Figure 5. Current Derating Figure 6. Forward Power Dissipation
TL, LEAD TEMPERATURE (C) IO, AVERAGE FORWARD CURRENT (AMPS)
0.20
1.0
0.6
0.5
0.3
0.1
01.00.4 0.8 1.2 1.6
0.4
SQUARE
WAVE dc
Ipk/Io = p
Ipk/Io = 10
Ipk/Io = 20
0.6 1.4
0.2
0.7
0.8
0.9
45 7525
1.8
1.2
1.0
0.8
0.2
0
55 115105
1.4
125
1.6
Ipk/Io = 20
Ipk/Io = 10
Ipk/Io = 5
Ipk/Io = p
SQUARE WAVE
dc
0.6
0.4
FREQ = 20 kHz
35 65 85 95
TJ, DERATED OPERATING TEMPERATURE (_C)
C, CAPACITANCE (pF)
Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating*
300
VR, REVERSE VOLTAGE (VOLTS)
1000
100
10
VR, DC REVERSE VOLTAGE (VOLTS)
15 400
115
95
85
75
155.0 10 20 25 20 255.0 10
105
125
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating
TJ may be calculated from the equation: TJ = TJmax − r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
Rtja = 33.72C/W
51C/W
83.53C/W 96C/W
TJ = 25C
4035 30 35
69C/W
MBRM140T1G, NRVBM140T1G, MBRM140T3G, NRVBM140T3G
http://onsemi.com
4
R(T), TRANSIENT THERMAL RESISTANCE (NORMALIZED) R(T), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
T, TIME (s)
1.0
0.1
0.01
0.001
1000.10.00001 1,0000.0001 0.001 0.01 1.0 10
Rtjl(t) = Rtjl*r(t)
50%
20%
10%
5.0%
2.0%
1.0%
Figure 9. Thermal Response Junction to Lead
1000.10.00001
T, TIME (s)
1.0
0.1
0.01
0.0001 0.001 0.01 1.0 10
0.001
Rtjl(t) = Rtjl*r(t)
50%
20%
10%
5.0%
2.0%
1.0%
Figure 10. Thermal Response Junction to Ambient
MBRM140T1G, NRVBM140T1G, MBRM140T3G, NRVBM140T3G
http://onsemi.com
5
PACKAGE DIMENSIONS
POWERMITE
CASE 457−04
ISSUE E
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A1.75 2.05 0.069 0.081
B1.75 2.18 0.069 0.086
C0.85 1.15 0.033 0.045
D0.40 0.69 0.016 0.027
F0.70 1.00 0.028 0.039
H-0.05 +0.10 -0.002 +0.004
J0.10 0.25 0.004 0.010
K3.60 3.90 0.142 0.154
L0.50 0.80 0.020 0.031
R1.20 1.50 0.047 0.059
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH,
PROTRUSIONS OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
S
B
M
0.08 (0.003) C S
T
−A−
−B−
S
J
K
−T−
H
L
J
C
D
S
B
M
0.08 (0.003) C S
T
F
PIN 1
PIN 2
R
0.50 REF 0.019 REF
2.54
0.100
0.635
0.025
1.27
0.050
2.67
0.105 0.762
0.030
ǒmm
inchesǓ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 1:
PIN 1. CATHODE
2. ANODE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
MBRM140/D
POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.
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