PIN DIODE COMMERCIAL ATTENUATOR DIODE Features Specified low distortion UM9301 SERIES e Low rectification properties at low reverse bias e Resistance specified at 3 current points. * High reliability fused-in-glass construction Description The UM9301 PIN Diode utilizes a special overail chip geometry with an extremely thick intrinsic Il region, to offer unique capabilities in both RF switch and attenuator applications. Volume production also makes the diode an economical choice suitable for many commercial low power equipments. The UM9301 has been designed for use in bridged TEE attenuator circuits commonly MAXIMUM RATINGS utilized for gain and slope control in CATV amplifiers. Low distortion and high dynamic range are characteristic of the diodes outstanding performance. The UM9301 is also appropriate for switch applications, when little or no bias voltage is available. Frequent applications occur in portable 12 volt-powered communications equipments, operating at frequencies as low as 2 MHz. Reverse Voltage (V,) Volts (In = 10 HA) 75V Average Power Dissipation @ (P,) Leads % in. overall to 25C Contact 1.0W (Derate linearly to 175C) Operating and Storage Temperature Range 65C to +175C uy 667 aon UNITRODEElectrical Specifications (25 C) UM9301 TWX (710) 326-6509 TELEX 95-1064 Test Min | Typ | Max | Units | Conditions Diode Resistance Re, 1.7 3.0 Q | = 100 mA, f = 100 MHz 80 150 Q | = 1mA,f = 100 MHz 3000 | 5000 Q | = 0.01 mA, f = 100 MHz Current for Rs = 75Q 0.5 1.1 2.0 mA f = 100 MHz Capacitance 0.8 pF V = OV, f = 100 MHz Return Loss 25 dB Frequency Range: 10 - 300MHz Rs = 752 @ 100 MHz Diode Terminates 752 line Second Order Distortion 55 50 dB | f, = 10 MHz, f, = 13 MHz P = 50 dBmV, See Test Circuit 70 ~dB F, = 67 MHz, F, = 77 MHz P = 50 dBmvV, See Test Circuit Third Order Distortion 75 65 -dB F, = 10 MHz, F, = 13 MHz P = 50 dBmV, See Test Circuit 95 ~~dB | Triple Beat; 205 + 67 - 77 MHz P = 50 dBmvV, See Test Circuit Cross Modulation Distortion 75 ~dB 12 Channel Test P=50 dBmvV, See Test Circuit Dix Hills Test Set Reverse Current 10 pA V = 75V Carrier Lifetime 4.0 us |= 10mA DIODE RESISTANCE FORWARD CURRENT VS VS DIODE CURRENT FORWARD VOLTAGE (TYPICAL) (TYPICAL) 100K 1000 10K 100 < > T000 = a 10 2 400 3 a 1 10 1 4 1 4 1 10 400 5 6 7 8 9 10 1.1 Diode Current (mA) Forward Voltage (Volts) UNITROOE CORPORATION + 5 FORBES ROAD LEXINGTON, MA 02173 TEL. (617) 861-6540 668 PRINTEO IN U.S.AUM9301 NORMALIZED Rg VS TEMPERATURE TEST CIRCUIT FOR DISTORTION MEASUREMENTS 1.3 1 12 D.U.T. 2 1 IN vn % " VV 6600 pF 6600 pF x 10 75 750 To 750 S From Output 3 750 33H 8 9 Input 33uHy 34.72 uy Diode E 1 Current z 11 5000 pF Supply a7 o- Note: Diode Current adjusted 7 for 10dB Attenuation -60 -40 -20 OQ +20 +40 +60 +80 +100 +120 Temperature (C) TYPICAL BRIDGED TEE ATTENUATOR PERFORMANCE DIODE CURRENT DISTORTION VS ATTENUATION UM9301 ATTENUATION second order distortion third order distortion Typical Diode Current (mA) dB Below First Order Input Power = +60 dBmV Input Frequencies = 10 MHz & 13 MHz 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 1214 16 18 2022 24 Attenuation (d8) Attenuation (dB) MECHANICAL SPECIFICATIONS 975" scene 975" 24.8mm -35mm 24.8mm_. " MIN. MAX. MIN. 029"Di a 74mm - _ | 027" 68mm af Pa = | .090 CATHODE 2.29mm BAND MAX. UNITRODE CORPORATION + 5 FORBES ROAD PRINTED IN U.S.A LEXINGTON, MA 02173 + TEL. (617) 861-6540 669 TWX (710) 326-6509 TELEX 95-1064