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Parameter: Symbol: Test Conditions: Min: Typ: Max: Unit:
Collector - Base Breakdown Voltage V(BR)CBO IC=100μA, IE=0 50 V
Collector - Emitter Breakdown Voltage V(BR)CEO IC=1.0mA, IB=0 45 V
Emmiter - Base Breakdown Voltage V(BR)EBO IE=100μA, IC=0 5 V
ICBO VCB=20V IE=0 100 nA
IEBO VEB=5V IC=0 100 nA
DC Current Gain BCW71
BCW72
BCW71
BCW72
hFE VCE=5V IC=10μA
VCE=5V IC=2mA 110
200
90
150
220
450
Collector - Emitter Saturation Voltage VCE(sat) IC=10mA IB=0.5mA
IC=50mA IB=2.5mA
0.12
0.21
0.25 V
V
Base Emitter Saturation Voltage VBE(sat) IC=10mA IB=0.5mA
IC=50mA IB=2.5mA
0.75
0.85
V
V
Base Emitter Voltage VBE IC=2mA VCE=5V 0.55 0.7 V
Collector Capacitance CCIE=Ie=0,VCB=10V,f=1MHz 2.5 pF
Transition Frequency fTVCE=5V IC=10mA
f=100MHz
100 MHz
Noise Figure NF VCE=5V IC=200μA RS=2kΩ
f=1kHz B=200Hz
10 dB
Maximum Ratings & Characteristics: Tamb=25o
Typical Characteristics: Tamb=25o
Ratings & Characteristic Curves