1 TC4421 TC4422 9A HIGH-SPEED MOSFET DRIVERS FEATURES Tough CMOSTM Construction High Peak Output Current .................................. 9A High Continuous Output Current ............... 2A Max Fast Rise and Fall Times: -- 30 nsec with 4,700 pF Load -- 180 nsec with 47,000 pF Load Short Internal Delays ............................ 30nsec Typ Low Output Impedance ............................ 1.4W Typ APPLICATIONS Line Drivers for Extra-Heavily-Loaded Lines Pulse Generators Driving the Largest MOSFETs and IGBTs Local Power ON/OFF Switch Motor and Solenoid Driver PIN CONFIGURATIONS 5-Pin TO-220 8-Pin Plastic DIP/CerDIP VDD 7 OUTPUT TC4421 TC4422 NC 3 TC4421 TC4422 6 OUTPUT GND 4 The TC4421/4422 are high current buffer/drivers capable of driving large MOSFETs and IGBTs. They are essentially immune to any form of upset except direct overvoltage or over-dissipation -- they cannot be latched under any conditions within their power and voltage ratings; they are not subject to damage or improper operation when up to 5V of ground bounce is present on their ground terminals; they can accept, without either damage or logic upset, more than 1A inductive current of either polarity being forced back into their outputs. In addition, all terminals are fully protected against up to 4 kV of electrostatic discharge. The TC4421/4422 inputs may be driven directly from either TTL or CMOS (3V to 18V). In addition, 300 mV of hysteresis is built into the input, providing noise immunity and allowing the device to be driven from slowly rising or falling waveforms. 3 4 ORDERING INFORMATION 8 VDD 1 INPUT 2 5 GND Tab is Common to VDD INPUT GND VDD GND OUTPUT 2 GENERAL DESCRIPTION NOTE: Duplicate pins must both be connected for proper operation. NC = No connection Part No. Package Temperature Range TC4421CAT TC4421CPA TC4421EPA TC4421MJA 5-Pin TO-220 8-Pin PDIP 8-Pin PDIP 8-Pin CerDIP 0C to +70C 0C to +70C - 40C to +85C - 55C to+125C TC4422CAT TC4422CPA TC4422EPA TC4422MJA 5-Pin TO-220 8-Pin PDIP 8-Pin PDIP 8-Pin CerDIP 0C to +70C 0C to +70C - 40C to +85C - 55C to+125C 5 6 FUNCTIONAL BLOCK DIAGRAM INVERTING V DD 300 mV OUTPUT 7 NONINVERTING INPUT 4.7V TC4421/TC4422 Inverting/Noninverting GND EFFECTIVE INPUT C 25 pF 8 TC4421/2-7 -1018/96 TELCOM SEMICONDUCTOR, INC. 4-231 9A HIGH-SPEED MOSFET DRIVERS TC4421 TC4422 Operating Temperature (Ambient) C Version ............................................... 0C to +70C E Version .......................................... - 40C to +85C M Version ....................................... - 55C to +125C Lead Temperature (10 sec) ..................................... 300C Supply Voltage ............................................................20V Input Voltage .......................... (VDD + 0.3V) to (GND - 5V) Input Current (VIN > VDD) ........................................ 50 mA ABSOLUTE MAXIMUM RATINGS* Power Dissipation, TA 70C PDIP ..................................................................730W CerDIP ............................................................800mW 5-Pin TO-220 ......................................................1.6W Power Dissipation, TA 70C 5-Pin TO-220 (With Heat Sink) .........................1.60W Derating Factors (To Ambient) PDIP ............................................................. 8mW/C CerDIP ....................................................... 6.4mW/C 5-Pin TO-220 .............................................. 12mW/C Thermal Impedance (To Case) 5-Pin TO-220 RQJ-C ..................................................... 10C/W Storage Temperature ............................ - 65C to +150C Operating Temperature (Chip) ................................ 150C *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS: TA = 25C with 4.5V VDD 18V unless otherwise specified. Symbol Parameter Test Conditions Min Typ Max Unit 0V VIN VDD 2.4 -- - 10 1.8 1.3 -- -- 0.8 10 V V A VDD - 0.025 -- -- -- -- 2 -- -- 1.4 0.9 9 -- 0.025 -- 1.7 -- V V A A >1500 t 300 sec -- -- mA Input VIH VIL IIN Logic 1 Input Voltage Logic 0 Input Voltage Input Current Output VOH VOL RO RO IPK IDC High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low Peak Output Current Continuous Output Current IREV Latch-Up Protection See Figure 1 See Figure 1 VDD = 18V, IO = 10 mA VDD = 18V, IO = 10 mA VDD = 18V 10V VDD 18V, TC = 25 (TC4421/22 CAT only) Duty Cycle 2% Withstand Reverse Current Switching Time (Note 1) tR tF tD1 tD2 Rise Time Fall Time Delay Time Delay Time Figure 1, CL = 10,000 pF Figure 1, CL = 10,000 pF Figure 1 Figure 1 -- -- -- -- 60 60 30 33 75 75 60 60 nsec nsec nsec nsec IS Power Supply Current VIN = 3V VIN = 0V VDD Operating Input Voltage -- -- 4.5 0.2 55 -- 1.5 150 18 mA A V Logic 1 Input Voltage Logic 0 Input Voltage Input Current 2.4 -- - 10 -- -- -- -- 0.8 10 V V A Power Supply Input VIH VIL IIN 4-232 0V VIN VDD TELCOM SEMICONDUCTOR, INC. 9A HIGH-SPEED MOSFET DRIVERS 1 TC4421 TC4422 ELECTRICAL CHARACTERISTICS (cont.): Measured over operating temperature range with 4.5V VS 18V unless otherwise specified. Symbol Parameter Test Conditions Min Typ Max Unit Logic 1 Input Voltage Logic 0 Input Voltage Input Current 0V VIN VDD 2.4 -- - 10 -- -- -- -- 0.8 10 V V A High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low See Figure 1 See Figure 1 VDD = 18V, IO = 10 mA VDD = 18V, IO = 10 mA VDD - 0.025 -- -- -- -- -- 2.4 1.8 -- 0.025 3.6 2.7 V V W W 2 Input VIH VIL IIN Output VOH VOL RO RO 3 Switching Time (Note 1) tR tF tD1 tD2 Rise Time Fall Time Delay Time Delay Time Figure 1, CL = 10,000 pF Figure 1, CL = 10,000 pF Figure 1 Figure 1 -- -- -- -- 60 60 50 65 120 120 80 80 nsec nsec nsec nsec IS Power Supply Current VIN = 3V VIN = 0V Operating Input Voltage 0.45 0.06 -- 3 0.2 18 mA VDD -- -- 4.5 4 Power Supply V 5 NOTE: 1. Switching times guaranteed by design. VDD = 18V 0.1 F 1 +5V 8 6 90% INPUT 0.1 F 0.1 F 0V INPUT 2 6 OUTPUT 4 t D1 tF t D2 tR 90% 90% OUTPUT 7 C L = 10,000 pF TC4421 +18V 10% 0V 10% 10% 7 5 INPUT: 100 kHz, square wave, tRISE = tFALL 10nsec 8 Figure 1. Switching Time Test Circuit TELCOM SEMICONDUCTOR, INC. 4-233 9A HIGH SPEED MOSFET DRIVERS TC4421 TC4422 TYPICAL CHARACTERISTICS Fall Time vs. Supply Voltage Rise Time vs. Supply Voltage 220 180 200 160 180 tRISE (nsec) tFALL (nsec) 22,000 pF 160 140 120 10,000 pF 100 80 100 80 10,000 pF 4700 pF 40 40 1000 pF 20 20 0 22,000 pF 120 60 4700 pF 60 140 1000 pF 0 4 6 8 10 14 12 16 4 18 6 8 10 V DD 12 VDD 14 300 300 5V 5V 250 250 tRISE (nsec) 150 15V tFALL (nsec) 10V 10V 200 200 150 15V 100 100 50 50 0 100 1000 10,000 CLOAD (pF) 0 100 100,000 1000 10,000 CLOAD (pF) 100,000 Propagation Delay vs. Supply Voltage Rise and Fall Times vs. Temperature 50 90 CLOAD = 10,000 pF VDD = 15V C LOAD = 1000 pF 45 70 TIME (nsec) TIME (nsec) 18 Fall TIme vs. Capacitive Load Rise TIme vs. Capacitive Load 80 16 60 t RISE 50 40 35 tD2 tD1 t FALL 40 30 30 -40 4-234 0 40 TA (C) 80 120 25 4 6 8 10 12 VDD 14 16 18 TELCOM SEMICONDUCTOR, INC. 9A HIGH SPEED MOSFET DRIVERS 1 TC4421 TC4422 TYPICAL CHARACTERISTICS (Cont.) Supply Current vs. Capacitive Load (VDD = 18V) 220 180 200 160 47,000 pF 2 MHz 180 140 63.2 kHz 1.125 MHz 100 80 632 kHz 60 ISUPPLY (mA) ISUPPLY (mA) 140 22,000 pF 10,000 pF 160 120 120 100 80 3 0.1 F 60 40 40 20 20 0 0 1000 100 4700 pF 20 kHz 200 kHz 10,000 CLOAD (pF) 2 Supply Current vs. Frequency (VDD = 18V) 470 pF 10 100,000 100 FREQUENCY (kHz) 1000 4 Supply Current vs. Frequency (VDD = 12) Supply Current vs. Capacitive Load, (VDD = 12) 180 180 160 160 140 140 120 120 100 2 MHz 63.2 kHz 80 60 1.125 MHz 40 632 kHz 20 200 kHz ISUPPLY (mA) ISUPPLY (mA) 22,000 pF 10,000 pF 47,000 pF 5 100 80 60 20 kHz 20 470 pF 0 0 100 1000 10,000 CLOAD (pF) 100,000 10 Supply Current vs. Capacitive Load (VDD = 6V) 6 1000 120 200 kHz 90 47,000 pF 100 80 22,000 pF 60 50 63.2 kHz 40 2 MHz ISUPPLY (mA) 70 ISUPPLY (mA) 100 FREQUENCY (kHz) Supply Current vs. Frequency (VDD = 6V) 100 30 4700 pF 0.1 F 40 80 60 40 632 kHz 0.1 F 20 20 kHz 10 7 10,000 pF 4700 pF 20 470 pF 0 100 1000 10,000 CLOAD (pF) TELCOM SEMICONDUCTOR, INC. 100,000 0 10 100 FREQUENCY (kHz) 8 1000 4-235 9A HIGH SPEED MOSFET DRIVERS TC4421 TC4422 TYPICAL CHARACTERISTICS (Cont.) Propagation Delay vs. Temperature Propagation Delay vs. Input Amplitude 120 50 VDD = 10V CLOAD = 10000V 110 100 45 90 TIME (nsec) TIME (nsec) 80 70 60 tD2 50 40 35 tD1 tD2 30 40 tD1 30 25 20 10 20 -60 -40 -20 0 1 10 2 -6 3 4 5 6 INPUT (V) 7 8 9 10 0 20 40 TA (C) 60 80 100 120 Quiescent Supply Current vs. Temperature Crossover Energy vs. Supply Voltage 103 10 IQUIESCENT (A) A*sec VDD= 18V -7 INPUT = 1 102 INPUT = 0 10 -8 4 6 8 10 12 V DD 14 16 18 -60 -40 -20 0 20 NOTE: The values on this graph represent the loss seen by the driver during a complete cycle. For the loss in a single transition, divide the stated value by 2. 5.5 5.5 5 5 4.5 4.5 TJ = 150 C RDS(ON) ( ) RDS(ON) ( ) 6 3.5 3 2.5 2 4 3.5 3 1.5 1 1 0.5 0.5 4 6 TJ = 150C 2.5 2 TJ = 25 C 8 10 12 VDD (V) 4-236 Low-State Output Resistance vs. Supply Voltage 6 1.5 80 100 120 J High-State Output Resistance vs. Supply Voltage 4 40 60 T (C) 14 16 18 TJ = 25C 4 6 8 10 12 14 16 18 VDD (V) TELCOM SEMICONDUCTOR, INC.