4-231
TELCOM SEMICONDUCTOR, INC.
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PIN CONFIGURATIONS
INPUT
GND
GND
OUTPUT
VDD
Tab is
Common
to VDD
NOTE:
1
2
3
45
6
7
8
OUTPUT
GND
TC4421
TC4422
TC4421
TC4422
VDD
INPUT
NC
GND
VDD
OUTPUT
Duplicate pins must both be connected
for proper operation.
NC = No connection
both
OUTPUT
INPUT
GND EFFECTIVE
INPUT C
25 pF
V
300 mV
DD
TC4421/TC4422
Inverting/Noninverting
4.7V
INVERTING
NONINVERTING
FEATURES
■Tough CMOS™ Construction
■High Peak Output Current .................................. 9A
■High Continuous Output Current ............... 2A Max
■Fast Rise and Fall Times:
— 30 nsec with 4,700 pF Load
— 180 nsec with 47,000 pF Load
■Short Internal Delays............................ 30nsec Typ
■Low Output Impedance ............................ 1.4W Typ
GENERAL DESCRIPTION
The TC4421/4422 are high current buffer/drivers
capable of driving large MOSFETs and IGBTs.
They are essentially immune to any form of upset
except direct overvoltage or over-dissipation — they can-
not be latched under any conditions within their power and
voltage ratings; they are not subject to damage or improper
operation when up to 5V of ground bounce is present on
their ground terminals; they can accept, without either
damage or logic upset, more than 1A inductive current of
either polarity being forced back into their outputs. In addi-
tion, all terminals are fully protected against up to 4 kV of
electrostatic discharge.
The TC4421/4422 inputs may be driven directly from
either TTL or CMOS (3V to 18V). In addition, 300 mV of
hysteresis is built into the input, providing noise immunity
and allowing the device to be driven from slowly rising or
falling waveforms.
TC4421/2-7 -1018/96
TC4421
TC4422
ORDERING INFORMATION
Part No. Package Temperature Range
TC4421CAT 5-Pin TO-220 0°C to +70°C
TC4421CPA 8-Pin PDIP 0°C to +70°C
TC4421EPA 8-Pin PDIP – 40°C to +85°C
TC4421MJA 8-Pin CerDIP – 55°C to+125°C
TC4422CAT 5-Pin TO-220 0°C to +70°C
TC4422CPA 8-Pin PDIP 0°C to +70°C
TC4422EPA 8-Pin PDIP – 40°C to +85°C
TC4422MJA 8-Pin CerDIP – 55°C to+125°C
FUNCTIONAL BLOCK DIAGRAM
9A HIGH-SPEED MOSFET DRIVERS
APPLICATIONS
■Line Drivers for Extra-Heavily-Loaded Lines
■Pulse Generators
■Driving the Largest MOSFETs and IGBTs
■Local Power ON/OFF Switch
■Motor and Solenoid Driver
5-Pin TO-220 8-Pin Plastic DIP/CerDIP
4-232 TELCOM SEMICONDUCTOR, INC.
9A HIGH-SPEED MOSFET DRIVERS
TC4421
TC4422
ELECTRICAL CHARACTERISTICS: TA = 25°C with 4.5V ≤ VDD ≤ 18V unless otherwise specified.
Symbol Parameter Test Conditions Min Typ Max Unit
Input
VIH Logic 1 Input Voltage 2.4 1.8 — V
VIL Logic 0 Input Voltage — 1.3 0.8 V
IIN Input Current 0V ≤ VIN ≤ VDD – 10 — 10 µA
Output
VOH High Output Voltage See Figure 1 VDD – 0.025 — — V
VOL Low Output Voltage See Figure 1 — — 0.025 V
ROOutput Resistance, High VDD = 18V, IO = 10 mA — 1.4 — Ω
ROOutput Resistance, Low VDD = 18V, IO = 10 mA — 0.9 1.7 Ω
IPK Peak Output Current VDD = 18V — 9 — A
IDC Continuous Output Current 10V ≤ VDD ≤ 18V, TC = 25°2A
(TC4421/22 CAT only)
IREV Latch-Up Protection Duty Cycle ≤ 2% >1500 — — mA
Withstand Reverse Current t ≤ 300 µsec
Switching Time (Note 1)
tRRise Time Figure 1, CL = 10,000 pF — 60 75 nsec
tFFall Time Figure 1, CL = 10,000 pF — 60 75 nsec
tD1 Delay Time Figure 1 — 30 60 nsec
tD2 Delay Time Figure 1 — 33 60 nsec
Power Supply
ISPower Supply Current VIN = 3V — 0.2 1.5 mA
VIN = 0V — 55 150 µA
VDD Operating Input Voltage 4.5 — 18 V
Input
VIH Logic 1 Input Voltage 2.4 — — V
VIL Logic 0 Input Voltage — — 0.8 V
IIN Input Current 0V ≤ VIN ≤ VDD – 10 — 10 µA
ABSOLUTE MAXIMUM RATINGS*
Power Dissipation, TA ≤ 70°C
PDIP ..................................................................730W
CerDIP............................................................800mW
5-Pin TO-220 ......................................................1.6W
Power Dissipation, TA ≤ 70°C
5-Pin TO-220 (With Heat Sink).........................1.60W
Derating Factors (To Ambient)
PDIP ............................................................. 8mW/°C
CerDIP....................................................... 6.4mW/°C
5-Pin TO-220 .............................................. 12mW/°C
Thermal Impedance (To Case)
5-Pin TO-220 RQJ-C .....................................................10°C/W
Storage Temperature ............................– 65°C to +150°C
Operating Temperature (Chip) ................................150°C
Operating Temperature (Ambient)
C Version...............................................0°C to +70°C
E Version ..........................................– 40°C to +85°C
M Version .......................................– 55°C to +125°C
Lead Temperature (10 sec).....................................300°C
Supply Voltage ............................................................20V
Input Voltage .......................... (VDD + 0.3V) to (GND - 5V)
Input Current (VIN > VDD) ........................................50 mA
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
4-233
TELCOM SEMICONDUCTOR, INC.
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9A HIGH-SPEED MOSFET DRIVERS
TC4421
TC4422
ELECTRICAL CHARACTERISTICS (cont.):
Measured over operating temperature range with 4.5V ≤ VS ≤ 18V unless otherwise specified.
Symbol Parameter Test Conditions Min Typ Max Unit
Input
VIH Logic 1 Input Voltage 2.4 — — V
VIL Logic 0 Input Voltage — — 0.8 V
IIN Input Current 0V ≤ VIN ≤ VDD – 10 — 10 µA
Output
VOH High Output Voltage See Figure 1 VDD – 0.025 — — V
VOL Low Output Voltage See Figure 1 — — 0.025 V
ROOutput Resistance, High VDD = 18V, IO = 10 mA — 2.4 3.6 W
ROOutput Resistance, Low VDD = 18V, IO = 10 mA — 1.8 2.7 W
Switching Time (Note 1)
tRRise Time Figure 1, CL = 10,000 pF — 60 120 nsec
tFFall Time Figure 1, CL = 10,000 pF — 60 120 nsec
tD1 Delay Time Figure 1 — 50 80 nsec
tD2 Delay Time Figure 1 — 65 80 nsec
Power Supply
ISPower Supply Current VIN = 3V — 0.45 3 mA
VIN = 0V — 0.06 0.2
VDD Operating Input Voltage 4.5 — 18 V
Figure 1. Switching Time Test Circuit
INPUT
C = 10,000 pF
L
OUTPUT
TC4421
0.1 µF 0.1 µF
26
7
54
18
V = 18V
DD
t
R
INPUT 90%
10%
+18V
OUTPUT
t
D1
0V
+5V
t
F
90%
t
D2
10%
0.1 µF
10%
90%
0V
INPUT: 100 kHz, square wave,
tRISE = tFALL ≤ 10nsec
NOTE: 1. Switching times guaranteed by design.
4-234 TELCOM SEMICONDUCTOR, INC.
TC4421
TC4422
9A HIGH SPEED MOSFET DRIVERS
TYPICAL CHARACTERISTICS
220
200
180
160
140
120
100
80
60
40
20
04681012
14 16 18
Rise Time vs. Supply Voltage
V
DD
1000 pF
4700 pF
10,000 pF
22,000 pF
5V
15V
300
250
200
150
100
50
0
Rise TIme vs. Capacitive Load
100 1000 10,000 100,000
10V
90
Rise and Fall Times vs. Temperature
60
40
30
tRISE
tFALL
70
50
80
–40 0 40 80 120
(°C)
50
810121416184
TIME (nsec)
VDD
Propagation Delay vs. Supply Voltage
45
40
35
30
25
tD2
tD1
6
C = 1000 pF
LOAD
180
160
140
120
100
80
60
40
20
04 6 8 1012141618
Fall Time vs. Supply Voltage
V
DD
1000 pF
4700 pF
10,000 pF
22,000 pF
300
250
200
150
100
50
0
Fall TIme vs. Capacitive Load
100 1000 10,000
5V
10V
15V
tRISE (nsec)
tRISE (nsec)
tFALL (nsec) tFALL (nsec)
CLOAD(pF) CLOAD(pF)
= 10,000 pF
LOAD
V = 15V
DD
C
TIME (nsec)
TA
100,000
4-235
TELCOM SEMICONDUCTOR, INC.
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TC4421
TC4422
9A HIGH SPEED MOSFET DRIVERS
TYPICAL CHARACTERISTICS (Cont.)
C (pF)
220
Supply Current vs. Capacitive Load
LOAD
100
200
180
160
140
120
100
80
60
40
20
0100,00010,0001000
1.125 MHz
632 kHz
200 kHz 20 kHz
2 MHz
I (mA)
SUPPLY
63.2 kHz
(V = 18V)
DD
FREQUENCY (kHz)
180
100
80
60
40
20
0
Supply Current vs. Frequency
120
140
160
0.1 µF
22,000 pF
470 pF
10,000 pF
4700 pF
I (mA)
SUPPLY
180
160
140
120
100
60
0
C (pF)
LOAD
80
40
20
I (mA)
SUPPLY
1.125 MHz
63.2 kHz
20 kHz
632 kHz
200 kHz
2 MHz
Supply Current vs. Capacitive Load,
(V = 12)
DD
100
Supply Current vs. Capacitive Load
90
80
70
60
50
40
30
20
10
0
C (pF)
LOAD
20 kHz
632 kHz
200 kHz
2 MHz 63.2 kHz
I (mA)
SUPPLY
(V = 6V)
DD
47,000 pF
120
40
20
0
100
0.1 µF
4700 pF
10 FREQUENCY (kHz)
100 1000
60
80
22,000 pF
470 pF
10,000 pF
I (mA)
SUPPLY
FREQUENCY (kHz)
I (mA)
180
SUPPLY
100
80
60
40
20
0
Supply Current vs. Frequency
120
140
160
0.1 µF
470 pF
22,000 pF
10 100 1000
4700 pF
10,000 pF
47,000 pF
(V = 18V)
DD
(V = 12)
DD
Supply Current vs. Frequency
(V = 6V)
DD
100 100,00010,0001000
100 100,00010,0001000 10 100 1000
10 100 1000
47,000 pF
4-236 TELCOM SEMICONDUCTOR, INC.
TYPICAL CHARACTERISTICS (Cont.)
120
TIME (nsec)
110
100
90
80
70
60
50
40
30
20
10
012345678910
Propagation Delay vs. Input Amplitude
VDD = 10V
CLOAD = 10000V
tD2
tD1
INPUT (V)
50
–40 –20 0 20 40 60 80 100 120–60
TIME (nsec)
Propagation Delay vs. Temperature
45
40
35
30
25
20
tD2 tD1
103
102
–40 –20 0 20 40 60 80 100 120–60
I (µA)
QUIESCENT
T (°C)
J
Quiescent Supply Current vs. Temperature
V = 18V
DD
6
4 6 8 1012141618
High-State Output Resistance
vs. Supply Voltage
R ( )
DS(ON) Ω
V (V)
DD
TJ= 150° C
TJ= 25° C
DD
4 6 8 1012141618
V (V)
Low-State Output Resistance
vs. Supply Voltage
TJ= 150°C
TJ= 25°C
Crossover Energy vs. Supply Voltage
10
A•sec
10
–6
–7
DD
NOTE: The values on this graph represent the loss seen
by the driver during a complete cycle. For the loss
in a single transition, divide the stated value by 2.
10–8 4681012141618
V
INPUT = 1
INPUT = 0
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
R ( )
DS(ON) Ω
T (°C)
A
TC4421
TC4422
9A HIGH SPEED MOSFET DRIVERS
