2SB1508 / 2SD2281
No.3714-1/4
Applications
•Relay drivers, high-speed inverters, converters.
Features
•Low collector-to-emitter saturation voltage: VCE(sat)=--0.5V (PNP), 0.4V (NPN) max.
•Wide ASO and highly registant to breakdown.
•Micaless package facilitating easy mounting.
Specifications ( ) : 2SB1508
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (--)60 V
Collector-to-Emitter Voltage VCEO (--)50 V
Emitter-to-Base Voltage VEBO (--)6 V
Collector Current IC(--)12 A
Collector Current (Pulse) ICP (--)25 A
Collector Dissipation PC3.0 W
Tc=25°C45W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Collector Cutoff Current ICBO VCB=(--)40V, IE=0A (--)0.1 mA
Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)0.1 mA
DC Current Gain hFE1V
CE=(--)2V, IC=(--)1A 70* 280*
hFE2V
CE=(--)2V, IC=(--)5A 30
Gain-Bandwidth Product fTVCE=(--)5V, IC=(--)1A 10 MHz
Continued on next page.
* : The 2SBB1508 / 2SD2281 are classified by 1A hFE as follows :
Rank Q R S
hFE 70 to 140 100 to 200 140 to 280
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN3714A
D0606FA TI IM TC-00000359 / N1098HA (KT) / 5111MH, JK (KOTO)
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
SANYO Semiconductors
DATA SHEET
2SB1508 / 2SD2281
PNP / NPN Epitaxial Planar Silicon Transistors
High-Current Switching
Applications
2SB1508 / 2SD2281
No.3714-2/4
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)6A, IB=(--)0.3A (--0.5)0.4 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)1mA, IE=0A (--)60 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞(--)50 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)1mA, IC=0A (--)6 V
Turn-ON Time ton See specified Test Circuit. (0.2)0.1 µs
Storage Time tstg See specified Test Circuit. (0.4)1.2 µs
Fall T ime tfSee specified Test Circuit. (0.1)0.5 µs
Package Dimensions Switching Time Test Circuit
unit : mm (typ)
7505-002
16.0 5.6 3.1
2.0
2.0
123
2.8
2.0
5.45 5.45
22.0
20.4
1.0 0.6
4.021.0
5.0
8.0
3.5
3.4
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PML
IC -- VCE IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
ITR09843
0--0.4--0.2 --0.6 --0.8 --1.0 --1.2 --1.4
0
--2
--4
--6
--8
--10
--12
--14
--16
IB=0mA
--20mA
--40mA
--60mA
--80mA
--1A
ITR09844
0 0.40.2 0.80.6 1.21.0 1.4
0
2
4
6
8
10
12
14
16
IB=0mA
--600mA
--200mA
--100mA
2SB1508
1A
600mA
200mA
400mA
80mA
60mA
40mA
2SD2281
20mA
--800mA
--400mA
100mA
PW=20µs
tr, tf≤15ns
INPUT
20V
50Ω
RB
1Ω
IB1
IB2
100µF 470µF
--5V
VR
++
RL
4Ω
OUTPUT
10IB1= --10IB2=IC=5A
For PNP, the polarity is reversed.
100Ω
2SB1508 / 2SD2281
No.3714-3/4
IT11888
10ms
1ms
--1.0
5
5
5
2
2
22
55
5--10 --100
--1.0
5
2
--10
--0.1
ICP= --25A
IC= --12A
DC operation
ITR09849
57 7 7
--0.1 22335
--1.0 23 5 2
--10
--0.1
--1.0
5
3
--10
5
7
7
7
3
3
5
2
2
2
IC / IB=
20
IC / IB=
10
ITR09850
5777
0.1 22335
1.0 23 5 2
10
0.1
1.0
5
3
10
5
3
3
5
2
0.01
2
2
100ms
ITR09847
--0.1 323 57 7
--1.0 --10
523 57 2 2
7
100
1000
5
3
2
7
10
5
3
2
7
5
3
2
ITR09848
0.1 323 5 1.0 10
52357 7 722
7
100
1000
5
3
2
7
10
5
3
2
7
5
3
2
VCE=2V
VCE= --2V
2SB1508
IC / IB=
20
IC / IB=10
2SD2281
PT≤100µs
2SB1508 2SD2281
ITR09845
0--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
0
--6
--4
--2
--8
--10
--16
--12
--14
2SB1508
VCE= --2V
ITR09846
00.20.40.80.6 1.0 1.2 1.4
0
4
2
6
8
10
12
14
16
2SD2281
VCE=2V
500µs
200µs
IT11889
10ms
1ms
1.0
5
5
5
2
2
22
55
510 100
1.0
5
2
10
0.1
ICP=25A
IC=12A
DC operation
100ms
PT≤100µs
500µs
200µs
hFE -- IChFE -- IC
Collector Current, IC -- A
DC Current Gain, hFE
Collector Current, IC -- A
DC Current Gain, hFE
VCE(sat) -- IC
VCE(sat) -- IC
Collector Current, IC -- A
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector Current, IC -- A
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
IC -- VBE
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
A S O
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
A S O
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
2SB1508
Tc=25°C
1ms to 100ms: Single pulse
2SD2281
Tc=25°C
1ms to 100ms: Single pulse
2SB1508 / 2SD2281
No.3714-4/4
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
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In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
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No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
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and reliable, but no guarantees are made or implied regarding its use or any infringements of
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PS
020406080100120 140 160
0
0.4
0.8
1.2
1.6
2.0
3.2
2.4
2.8
3.0
ITR09853
020406080100 120 140 160
0
10
20
30
50
40
45
ITR09854
PC -- Ta
No heat sink
Ambient Temperature, Ta -- °C
Collector Dissipation, PC -- W
PC -- Tc
Case Temperature, Tc -- °C
Collector Dissipation, PC -- W
This catalog provides information as of December, 2006. Specifications and information herein are subject
to change without notice.
