2SB1508 / 2SD2281 Ordering number : EN3714A SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB1508 / 2SD2281 High-Current Switching Applications Applications * Relay drivers, high-speed inverters, converters. Features * * * Low collector-to-emitter saturation voltage: VCE(sat)=--0.5V (PNP), 0.4V (NPN) max. Wide ASO and highly registant to breakdown. Micaless package facilitating easy mounting. Specifications ( ) : 2SB1508 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)60 V Collector-to-Emitter Voltage VCEO (--)50 V Emitter-to-Base Voltage VEBO (--)6 V IC (--)12 A ICP (--)25 A 3.0 W Collector Current Collector Current (Pulse) Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25C 45 W 150 C --55 to +150 C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol Conditions ICBO IEBO VCB=(--)40V, IE=0A VEB=(--)4V, IC=0A hFE1 hFE2 VCE=(--)2V, IC=(--)1A VCE=(--)2V, IC=(--)5A fT VCE=(--)5V, IC=(--)1A Ratings min typ max 70* Unit (--)0.1 mA (--)0.1 mA 280* 30 10 MHz Continued on next page. * : The 2SBB1508 / 2SD2281 are classified by 1A hFE as follows : Rank Q R S hFE 70 to 140 100 to 200 140 to 280 Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D0606FA TI IM TC-00000359 / N1098HA (KT) / 5111MH, JK (KOTO) No.3714-1/4 2SB1508 / 2SD2281 Continued from preceding page. Parameter Symbol Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage VCE(sat) V(BR)CBO IC=(--)6A, IB=(--)0.3A IC=(--)1mA, IE=0A Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO IC=(--)1mA, RBE= IE=(--)1mA, IC=0A Turn-ON Time Storage Time Fall Time Ratings Conditions min typ Unit max (--0.5)0.4 V (--)60 V (--)50 V (--)6 V ton tstg See specified Test Circuit. (0.2)0.1 s See specified Test Circuit. (0.4)1.2 s tf See specified Test Circuit. (0.1)0.5 s Package Dimensions Switching Time Test Circuit unit : mm (typ) 7505-002 5.6 3.4 3.1 IB2 1 INPUT 5.0 8.0 16.0 IB1 PW=20s tr, tf15ns 4.0 20.4 0.6 SANYO : TO-3PML mA --400 --12 --10 --200mA --8 --100mA --80mA --60mA --40mA --20mA IB=0mA --6 --4 --2 0 --0.6 --0.8 --1.0 --1.2 A 0m 1A 2SD2281 A 400m 60 14 --1.4 Collector-to-Emitter Voltage, VCE -- V ITR09843 Collector Current, IC -- A --14 IC -- VCE 16 2SB1508 mA A --1 --800 mA 0 --60 --0.4 20V 10IB1= --10IB2=IC=5A For PNP, the polarity is reversed. IC -- VCE --0.2 470F 1 : Base 2 : Collector 3 : Emitter 5.45 --16 0 + 100F 3 5.45 + --5V 3.5 2 RL 4 100 2.0 1.0 Collector Current, IC -- A VR 50 2.0 21.0 22.0 RB 2.8 2.0 1 OUTPUT 12 200mA 10 100mA 80mA 60mA 8 6 40mA 4 20mA 2 IB=0mA 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector-to-Emitter Voltage, VCE -- V 1.4 ITR09844 No.3714-2/4 2SB1508 / 2SD2281 IC -- VBE 2SB1508 VCE= --2V 2SD2281 14 Collector Current, IC -- A Collector Current, IC -- A --14 --12 --10 --8 --6 --4 --2 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Base-to-Emitter Voltage, VBE -- V 8 6 4 --1.4 0 0.4 0.6 0.8 1.0 1.2 Base-to-Emitter Voltage, VBE -- V 2SD2281 7 5 3 1.4 ITR09846 hFE -- IC 1000 2SB1508 7 5 0.2 ITR09845 hFE -- IC 1000 3 2 DC Current Gain, hFE DC Current Gain, hFE 10 0 0 VCE= --2V 100 7 5 3 2 10 7 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 7 5 3 2 10 7 5 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 ITR09848 VCE(sat) -- IC 10 2SB1508 7 5 VCE=2V 100 Collector Current, IC -- A VCE(sat) -- IC --10 2 3 2 2 5 7 --10 2 ITR09847 Collector Current, IC -- A 2SD2281 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 3 2 --1.0 7 5 3 2 --0.1 7 5 =20 IC / IB =10 IC / IB 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 1.0 5 3 2 0.1 IC/ 5 IC 2 PT100s 0m s 5 2 1.0 5 tio n --100 IT11888 10 era Collector-to-Emitter Voltage, VCE -- V 5 200s IC=12A 2SD2281 Tc=25C 1ms to 100ms: Single pulse 5 2 7 10 2 ITR09850 s 0 10 0.1 --10 5 op n 5 3 ms tio 2 2 ASO ICP=25A 2 2SB1508 Tc=25C 1ms to 100ms: Single pulse --1.0 7 1.0 10 era op 2 5 5 DC DC 5 3 50 ms 10 2 5 2 s 5 --1.0 7 0.1 1m s 0 s 20 0 s s 5 2 50 0m 1m 10 3 5 2 --0.1 0 =1 / IB Collector Current, IC -- A PT100s IC= --12A 20 I B= 3 7 --10 2 ITR09849 ASO ICP= --25A --10 2 2 Collector Current, IC -- A 5 3 0.01 Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 12 2 0 Collector Current, IC -- A IC -- VBE 16 VC E=2V --16 5 1.0 2 5 10 2 5 Collector-to-Emitter Voltage, VCE -- V 100 IT11889 No.3714-3/4 2SB1508 / 2SD2281 PC -- Ta 3.2 PC -- Tc 50 3.0 45 Collector Dissipation, PC -- W 2.4 2.0 o N sin at he 1.6 k Collector Dissipation, PC -- W 2.8 1.2 0.8 40 30 20 10 0.4 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 ITR09853 0 20 40 60 80 100 120 140 Case Temperature, Tc -- C 160 ITR09854 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2006. Specifications and information herein are subject to change without notice. PS No.3714-4/4