IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
TO-247 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= IC90; VCE = 10 V, 15 25 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies 2700 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 270 pF
Cres 50 pF
QG110 150 nC
QGE IC = IC90, VGE = 15 V, VCE = 0.5 VCES 23 35 nC
QGC 40 75 nC
td(on) 25 ns
tri 20 ns
td(off) 100 200 ns
tfi 80 150 ns
Eoff 0.6 1.2 mJ
td(on) 25 ns
tri 25 ns
Eon 1mJ
td(off) 120 ns
tfi 120 ns
Eoff 1.2 mJ
RthJC 0.62 K/W
RthCK 0.25 K/W
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
VFIF = IC90, VGE = 0 V, 1.6 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IRM IF = IC90, VGE = 0 V, -diF/dt = 240 A/µs1015A
trr VR = 360 V TJ = 125°C 150 ns
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJ =25°C35 50ns
RthJC 1 K/W
Inductive load, TJ = 25°°
°°
°C
IC = IC90, VGE = 15 V, L = 100 µH,
VCE = 0.8 VCES, RG = Roff = 4.7 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
Inductive load, TJ = 125°°
°°
°C
IC = IC90, VGE = 15 V, L = 100 µH
VCE = 0.8 VCES, RG = Roff = 4.7 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
IXGH32N60BU1