© 2003 IXYS All rights reserved DS95567C(02/03)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES IC= 750µA, VGE = 0 V 600 V
VGE(th) IC= 250 µA, VCE = VGE 2.5 5.0 V
ICES VCE = 0.8 • VCES TJ = 25°C 500 µA
VGE = 0 V TJ = 125°C8mA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= IC90, VGE = 15 V 2.3 V
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 600 V
VCGR TJ= 25°C to 150°C; RGE = 1 MΩ600 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C60A
IC90 TC= 90°C32A
ICM TC= 25°C, 1 ms 120 A
SSOA VGE = 15 V, TVJ = 125°C, RG = 33 Ω ICM = 64 A
(RBSOA) Clamped inductive load, L = 100 µH @ 0.8 VCES
PCTC= 25°C 200 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
Maximum Lead and Tab temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
MdMounting torque, TO-247 AD 1.13/10 Nm/lb.in.
Weight 6g
HiPerFASTTM IGBT
with Diode
Features
zInternational standard packages
JEDEC TO-247 SMD
zHigh frequency IGBT and antiparallel
FRED in one package
zHigh current handling capability
zNewest generation HDMOSTM process
zMOS Gate turn-on
- drive simplicity
Applications
zAC motor speed control
zDC servo and robot drives
zDC choppers
zUninterruptible power supplies (UPS)
zSwitched-mode and resonant-mode
power supplies
Advantages
zSpace savings (two devices in one
package)
zHigh power density
zVery fast switching speeds for high
frequency applications
IXGH 32N60BU1 VCES = 600 V
IC25 = 60 A
VCE(sat) = 2.3 V
tfi = 80 ns
C (TAB)
G = Gate, C = Collector,
E = Emitter, TAB = Collector
GCE
TO-247 AD
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
TO-247 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= IC90; VCE = 10 V, 15 25 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies 2700 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 270 pF
Cres 50 pF
QG110 150 nC
QGE IC = IC90, VGE = 15 V, VCE = 0.5 VCES 23 35 nC
QGC 40 75 nC
td(on) 25 ns
tri 20 ns
td(off) 100 200 ns
tfi 80 150 ns
Eoff 0.6 1.2 mJ
td(on) 25 ns
tri 25 ns
Eon 1mJ
td(off) 120 ns
tfi 120 ns
Eoff 1.2 mJ
RthJC 0.62 K/W
RthCK 0.25 K/W
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
VFIF = IC90, VGE = 0 V, 1.6 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IRM IF = IC90, VGE = 0 V, -diF/dt = 240 A/µs1015A
trr VR = 360 V TJ = 125°C 150 ns
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJ =25°C35 50ns
RthJC 1 K/W
Inductive load, TJ = 25°°
°°
°C
IC = IC90, VGE = 15 V, L = 100 µH,
VCE = 0.8 VCES, RG = Roff = 4.7 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
Inductive load, TJ = 125°°
°°
°C
IC = IC90, VGE = 15 V, L = 100 µH
VCE = 0.8 VCES, RG = Roff = 4.7 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
IXGH32N60BU1
© 2003 IXYS All rights reserved
IXGH32N60BU1
TJ - De grees C
-50 -25 0 25 50 75 100 125 150
BV/VGE(th) - Normalize d
0.70
0.75
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
TJ - Degrees C
25 50 75 100 125 150
VCE (sat) - Normalized
0.75
1.00
1.25
1.50
1.75
VCE - Volts
01234567
IC - Amperes
0
20
40
60
80
100
VGE - Volts
345678910
IC - Amperes
0
20
40
60
80
100
VCE - Volts
0246810
IC - Amperes
0
40
80
120
160
200 13V 11V
9V
7V
VCE = 10V
VGE = 15V
13V
11V
9V
7V
TJ = 25°C VGE = 15V
TJ = 25°C
IC = 16A
IC = 32A
IC = 64A
TJ = 125°C
VGE(th)
IC = 25 0µA
BVCES
IC = 250µA
G32N60B P1
5V 5V
VGE = 15V
TJ = 25°C
VCE - Volts
01234567
IC - Amperes
0
20
40
60
80
100
TJ = 125°C
Fig. 6. Temperature Dependence of BVDSS & VGE(th)
Fig. 5. Admittance Curves
Fig. 3. Saturation Voltage Characteristics Fig. 4. Temperature Dependence of VCE(sat)
Fig. 1. Saturation Voltage Characteristics Fig. 2. Extended Output Characteristics
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Fig. 11. Transient Thermal Resistance
Pulse W idth - Seconds
0.00001 0.0001 0.001 0.01 0.1 1
ZthJC (K/W)
0.001
0.01
0.1
1
D=0.2
VCE - Volts
0 100 200 300 400 500 600
IC - Amperes
0.1
1
10
100
Qg - nanocoulombs
0 25 50 75 100 125 150
VGE - Volts
0
3
6
9
12
15
RG - O h ms
0 102030405060
E(OFF) - millijoules
0
1
2
3
4
5
E(ON) - millijoules
0.0
0.5
1.0
1.5
2.0
2.5 TJ = 125°C
IC - Amperes
0 20406080
E(OFF) - milliJoules
0
1
2
3
4
5
E(ON) - millijoules
0.0
0.5
1.0
1.5
2.0
2.5
VCE = 300V
IC = 32A
IC = 32A
E(ON)
E(OFF)
E(ON)
E(OFF)
TJ = 1 25°C
RG = 4.7Ω
dV/dt < 5V/ns
D=0.5
D=0.1
D=0.05
D=0.02
D=0.01
Single pu lse
D = Duty Cycle
RG = 10Ω
TJ = 125°C
Fig. 10. Turn-off Safe Operating Area
Fig. 9. Gate Charge
Fig. 8. Dependence of tfi and EOFF on RG.
Fig. 7. Dependence of tfi and EOFF on IC.
IXGH32N60BU1
© 2003 IXYS All rights reserved
IXGH32N60BU1
diF /dt - A /µs
0 200 400 600
trr - nanoseconds
0.0
0.2
0.4
0.6
0.8
diF /dt - A/µs
200 400 600
IRM - Amperes
0
10
20
30
40
diF /dt - A/µs
1 10 100 1000
Qr - n anocoulom bs
0
1
2
3
4
TJ - Degrees C
0 40 80 120 160
Normalized IRM /Qr
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Qr
IRM
diF /dt - A/µ s
0 100 200 300 400 500 600
tfr - nanoseco nds
0
200
400
600
800
1000
VFR - Vo lts
0
5
10
15
20
25
tfr
VFR
Voltage Drop - Volts
0.5 1.0 1.5 2.0 2.5
Current - Amperes
0
20
40
60
80
100
TJ = 150°C
TJ = 100 °C
TJ = 25°C
TJ = 125°C
IF = 37A
typ.
IF = 60A
IF = 30A
IF = 15A
IF = 30A
TJ = 100°C
VR = 350V
TJ = 100°C
VR = 350V TJ = 100°C
VR = 350V
typ.
IF = 60A
IF = 30A
IF = 15A
max.
IF = 30A max.
IF = 30A
typ.
IF = 60A
IF = 30A
IF = 15A
max.
Fig.14 Junction Temperature Dependence Fig.15 Reverse Recovery Chargee
off IRM and Qr
Fig.16 Peak Reverse Recovery Current Fig.17 Reverse Recovery Time
Fig.12 Maximum Forward Voltage Drop Fig.13 Peak Forward Voltage VFR and
Forward Recovery Time tFR
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Pulse Width - Seconds
0.001 0.01 0.1 1
RthJC - K/ W
0.01
0.10
1.00
Fig.18 Diode Transient Thermal resistance junction to case
IXGH32N60BU1
