2011-2013 Microchip Technology Inc. DS20005004C-page 1
MCP16301/H
Features:
• Up to 96% Typical Efficiency
• Input Voltage Range:
- 4.0V to 30V (MCP16301)
- 4.7V to 36V (MCP16301H)
• Output Voltage Range: 2.0V to 15V
• 2% Output Voltage Accuracy
• Integrated N-Channel Buck Switch: 460 m
• 600 mA Output Current
• 500 kHz Fix ed Frequen cy
• Adjustable Output Voltag e
• Low Device Shutdown Current
• Peak Cur rent Mode Control
• Intern al Com pen sation
• Stable with Ceramic Capacitors
• Internal Soft-S tart
• Cycle-b y-Cycl e Peak Current Limit
• Undervoltage Lockout (UVLO): 3.5V
• Overtemperature Protection
• Available Package: SOT-23-6
Applications:
•PIC
®/dsPIC® Microcontroller Bias Supply
• 24V Industrial Input DC-DC Conversion
• Set-Top Boxes
• DSL Cable Modems
• Automotive
• Wall Cube Regulat ion
• SLA Battery-Powered Devices
• AC-DC Digital Control Power Source
• Power Meters
•D
2 Package Linear Regulator Replacement
-See Figure 5-2
•Consumer
• Medical and Health Care
• Distributed Power Supplies
General Description:
The MCP16301/H devices are highly integrated,
high-efficiency, fixed-frequency, step-down DC-DC
converters in a popular 6-pin SOT-23 package that
operates from input voltage sources up to 36V.
Integrated features include a high-side switch,
fixed-frequency Peak Current Mode Control, internal
compe ns at i on, p ea k c urr e nt l i mi t and o v er te mp er at ur e
protection. Minimal external components are
necessary to develop a complete step-down DC-DC
converter power supply.
High co nverter ef fic ienc y is achiev ed by inte grating the
current-limited, low-resistance, high-speed N-Channel
MOSFET and associated drive circuitry. High
switching frequency minimizes the size of external
filtering components, resulting in a small solution size.
The MCP16301/H devices can supply 600 mA of
continuous current while regulating the output voltage
from 2.0V to 15V. An integrated, high-performance
peak current mode architecture keeps the output
voltage tightly regulated, even during input voltage
steps and output current transient conditions that are
common in power syst ems.
The EN input is used to turn the device on and off.
While turned off, only a few micro amps of current are
consumed from the input for power shedding and load
distribution applications.
Output voltage is set with an external resistor divider.
The MCP16301/H devices are offered in a
space-saving SOT-23-6 surface mount package.
Package Type
MCP16301/H
6-Lead SOT-23
1
2
34
5
6SW
VIN
EN
BOOST
GND
VFB
High-Voltage Input Integrated Switch Step-Down Regulator
MCP16301/H
DS20005004C-page 2 2011-2013 Microchip Technology Inc.
Typical Applications
VIN
GND
VFB
SW
VIN
6.0V to 36V
VOUT
5.0V @ 600 mA
COUT
2X10µF
CIN
10 µF
L1
22 µH
Boost
52.3 k
10 k
EN
1N4148
40V
Schottky
Diode
CBOOST
100 nF
VIN
GND
VFB
SW
VIN
4.5V to 36V
VOUT
3.3V @ 600 mA
COUT
2X10µF
CIN
10 µF
L1
15 µH
Boost
31.2 k
10 k
EN
1N4148
40V
Schottky
Diode
CBOOST
100 nF
0
10
20
30
40
50
60
70
80
90
100
10 100 1000
IOUT (m A)
Efficienc y (%)
VOUT = 5.0V
VOUT = 3.3V
VIN = 12V
2011-2013 Microchip Technology Inc. DS20005004C-page 3
MCP16301/H
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
VIN, SW............................... ................................-0.5V to 40 V
BOOST – GND ..................... ........................... ...-0.5V to 46V
BOOST – SW Voltage........................................-0.5V to 6.0V
VFB Voltage........................................................-0.5V to 6.0V
EN Voltage............................................. -0.5V to (VIN +0.3V)
Output Sh o r t-Circuit Current.................. ...... ...... ...Continuous
Power Dissi p a tion .......... ...... ...... ....... ...... ....Internally Limited
Storage Temperature ............................... .... -65°C to +150°C
Ambient Temperature with Power Applied... -40°C to +125°C
Operating Junction Temperature.................. -40°C to +150°C
ESD Protection On All Pins:
HBM.................................................................3 kV
MM..................................................................200V
† Notice: S tresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the devi ce at those or any other c onditions ab ove those
indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
DC CHARACTERISTICS
Electrical Characteristics : Unless otherwise indicated, TA= +25°C, VIN =V
EN =12V, V
BOOST –V
SW =3.3V,
VOUT =3.3V, I
OUT = 1 00 mA, L = 15 µH, COUT =C
IN = 2 X 10 µF X7R ceram ic capacitors.
Boldface specifications apply over the TA range of -40oC to +125oC.
Parameters Sym. Min. Typ. Max. Units Conditions
Input Voltage VIN 4—30 VNote 1 (MCP16301)
4.7 —36 VNote 1 (MCP16301H)
Feedbac k Voltage VFB 0.784 0.800 0.816 V
Output Voltage Adjust Range VOUT 2.0 —15.0 VNote 2
Feedbac k Voltage
Line Regulation VFB/VFB)/VIN —0.010.1 %/V VIN = 12V to 30V
Feedbac k Inpu t Bias C urren t IFB -250 ±10 +250 nA
Undervoltage Lockout Start UVLOSTART —3.54.0 VV
IN Rising (MCP16301)
—3.54.7 VV
IN Rising (MCP16301H)
Undervoltage Lockout Stop UVLOSTOP 2.4 3.0 — V VIN Falling
Undervoltage Lockout
Hysteresis UVLOHYS —0.5 —V
Switching Frequency fSW 425 500 550 kHz IOUT = 200 mA
Maximu m Duty Cycle DCMAX 90 95 — % VIN =5V; V
FB =0.7V;
IOUT = 100 mA
Minimu m Duty Cycle DCMIN —1 —%
NMOS Switch On Resistance RDS(ON) —0.46—VBOOST –V
SW =3.3V
NMOS Switch Current Limit IN(MAX) —1.3 —AV
BOOST –V
SW =3.3V
Quiescent Current IQ—27.5 mA VBOOST =3.3V; Note 3
Quiescent Current - Shutdown IQ—710 µA VOUT =EN=0V
Maximum Output Current IOUT 600 ——mANote 1
EN Input Logic High VIH 1.4 ——V
EN Input Logic Low VIL ——0.4 V
EN Input Leakage Current IENLK —0.051.0 µA VEN = 12V
Note 1: The input volta ge sh oul d be > output volt ag e + headroom volt a ge; higher loa d curre nt s inc rea se the input
voltage necessary for regulation. See characterization graphs for typical input to output operating voltage
range and UVLOSTART and UVLOSTOP limits.
2: For VIN <V
OUT, VOUT will not remain in regulation.
3: VBOOST supply is derived from VOUT.
MCP16301/H
DS20005004C-page 4 2011-2013 Microchip Technology Inc.
Soft-Start Time tSS — 300 — µS EN Low to High,
90% of VOUT
Thermal Shutdo wn Die
Temperature TSD —150—C
Die Temperature Hysteresis TSDHYS —30—C
TEMPERATURE SPECIFICATIONS
Electrical Specifications:
Parameters Sym. Min. Typ. Max. Units Conditions
Temperature Ranges
Operati ng Junction Temperature Rang e TJ-40 — +125 °C Steady State
Storage Temperature Range TA-65 — +150 °C
Maximum Junction Temper ature TJ— — +150 °C Transient
Package Thermal Resistances
Thermal Resistance, 6L-SOT-23 JA — 190.5 — °C/W EIA/JESD51-3 Standard
DC CHARACTERISTICS (CONTINUE D)
Electrical Characteristics : Unless otherwise indicated, TA= +25°C, VIN =V
EN =12V, V
BOOST –V
SW =3.3V,
VOUT =3.3V, I
OUT = 1 00 mA, L = 15 µH, COUT =C
IN = 2 X 10 µF X7R ceram ic capacitors.
Boldface specifications apply over the TA range of -40oC to +125oC.
Parameters Sym. Min. Typ. Max. Units Conditions
Note 1: The input volta ge sh ou ld be > output volt ag e + headroom volt a ge; higher loa d currents incr ea se the inpu t
voltage necessary for regulation. See characterization graphs for typical input to output operating voltage
range and UVLOSTART and UVLOSTOP limits.
2: For VIN <V
OUT, VOUT will not remain in regulation.
3: VBOOST supply is derived from VOUT.
2011-2013 Microchip Technology Inc. DS20005004C-page 5
MCP16301/H
2.0 TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, VIN =EN=12V, C
OUT =C
IN =2X10µF, L=15µH, V
OUT =3.3V, I
LOAD =200mA,
TA=+25°C.
FIGURE 2-1: 2.0V VOUT Efficiency vs.
IOUT.
FIGURE 2-2: 3.3V VOUT Efficiency vs.
IOUT.
FIGURE 2-3: 5.0V VOUT Efficiency vs.
IOUT.
FIGURE 2-4: 12V VOUT Effi cien cy vs.
IOUT.
FIGURE 2-5: 15V VOUT Effi cien cy vs.
IOUT.
FIGURE 2-6: Input Quiescent Current vs.
Temperature.
Note: The gra phs and table s pro vi ded follo w ing this note ar e a st a tis tic al sum ma ry ba sed on a limi ted nu mb er of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
30
40
50
60
70
80
90
0 100 200 300 400 500 600
Efficiency (%)
IOUT (mA)
VIN =30V
VIN =12V
VIN = 6V
VOUT = 2.0V
30
40
50
60
70
80
90
100
0 100 200 300 400 500 600
Efficiency (%)
IOUT (mA)
VIN = 30V
VIN = 12V
VIN = 6V
VOUT = 3.3V
30
40
50
60
70
80
90
100
0 100 200 300 400 500 600
Efficiency (%)
IOUT (mA)
V
IN
= 30V
V
IN
= 12V
V
IN
= 6V
V
OUT
= 5.0V
30
40
50
60
70
80
90
100
0 100 200 300 400 500 600
Efficiency (%)
IOUT (mA)
VIN = 30V
VIN = 24V
VIN = 16V
VOUT = 12.0V
30
40
50
60
70
80
90
100
0 100 200 300 400 500 600
Efficiency (%)
IOUT (mA)
V
IN
= 30V
V
IN
= 24V
V
IN
= 16V
V
OUT
= 15.0V
0
1
2
3
4
5
-40 -25 -10 5 20 35 50 65 80 95 110 125
I
Q
(mA)
Ambient Temperature (°C)
V
OUT
= 3.3V
I
OUT
= 0 mA
V
IN
= 12V
V
IN
= 6V
V
IN
= 30V
MCP16301/H
DS20005004C-page 6 2011-2013 Microchip Technology Inc.
Note: Unless otherwise indicated, VIN =EN=12V, C
OUT =C
IN =2X10µF, L=15µH, V
OUT =3.3V, I
LOAD =200mA,
TA=+25°C.
FIGURE 2-7: Switching Frequency vs.
Temperature; VOUT =3.3V.
FIGURE 2-8: Maximum Duty Cycle vs.
Ambient Temperature; VOUT =5.0V.
FIGURE 2-9: Pe ak Current Limit vs.
Temperature; VOUT =3.3V.
FIGURE 2-10: Switch RDSON vs. VBOOST.
FIGURE 2-11: VFB vs. Temperature;
VOUT =3.3V.
FIGURE 2-12: Undervoltage Lockout vs.
Temperature.
455
460
465
470
475
480
485
490
495
500
505
-40 -20 0 20 40 60 80 100 120
Switching Frequency (kHz)
Ambient Temperature (°C)
V
IN
= 12V
V
OUT
= 3.3V
I
OUT
= 200 mA
94.7
94.8
94.9
95
95.1
95.2
95.3
95.4
95.5
-40 -25 -10 5 20 35 50 65 80 95 110 125
Maximum Duty Cycle (%)
Ambient Temperature (°C)
VIN = 5V
IOUT = 200 mA
600
800
1000
1200
1400
1600
1800
-40 -25 -10 5 20 35 50 65 80 95 110 125
Peak Current Limit (mA)
Ambient Temperature (°C)
VIN = 12V
VIN = 30V
VIN = 6V
VOUT = 3.3V
420
430
440
450
460
470
480
490
500
510
33.544.55
RDSON (m
:
)
Boost Voltage (V)
TA= 25°C
VDS = 100 mV
0.796
0.797
0.798
0.799
0.800
0.801
0.802
-40 -20 0 20 40 60 80 100 120
V
FB
Voltage (V)
Ambient Temperature (°C)
V
IN
= 12V
V
OUT
= 3.3V
I
OUT
= 100 mA
2.50
2.60
2.70
2.80
2.90
3.00
3.10
3.20
3.30
3.40
3.50
3.60
3.70
3.80
-40 -25 -10 5 20 35 50 65 80 95 110 125
Voltage (V)
Ambient Temperature (°C)
UVLO Start
UVLO Stop
2011-2013 Microchip Technology Inc. DS20005004C-page 7
MCP16301/H
Note: Unless otherwise indicated, VIN =EN=12V, C
OUT =C
IN =2X10µF, L=15µH, V
OUT =3.3V, I
LOAD =200mA,
TA=+25°C.
FIGURE 2-13: EN Threshold Voltage vs.
Temperature.
FIGURE 2-14: Light Load Switc hi ng
Waveforms.
FIGURE 2-15: Heavy Load Switching
Waveforms.
FIGURE 2-16: Typical Minimum Input
Voltage vs. Output Current.
FIGURE 2-17: Startup From Enable.
FIGURE 2-18: Startup From VIN.
0.40
0.45
0.50
0.55
0.60
0.65
0.70
-40 -25 -10 5 20 35 50 65 80 95 110 125
Enable Threshold Voltage (V)
Ambient Temperature (°C)
VIN = 12V
VOUT = 3.3V
IOUT = 100 mA
VOUT = 3.3V
IOUT = 50 mA
VIN = 12V
VOUT
20 mV/DIV
AC coupled
VSW
5V/DIV
IL
100 mA/DIV
1µs/DIV
VOUT = 3.3V
IOUT = 600
mA
1 µs/DIV
VOUT =
20 mV/DIV
AC coupled
VSW =
5V/DIV
IL =
20 mA/DIV
3.20
3.50
3.80
4.10
4.40
4.70
5.00
1 10 100 1000
Minimum Input Voltage (V)
IOUT (mA)
To Start
To Run
VOUT = 3.3V
IOUT = 100 mA
VIN = 12V
VOUT
2V/DIV
100 µs/
VOUT
2V/DIV
100 µs/DIV
VEN
2V/DIV
VOUT = 3.3V
IOUT = 100 mA
VIN = 12V
VOUT
1V/DIV
VIN
5V/DIV
100 µs/DIV
MCP16301/H
DS20005004C-page 8 2011-2013 Microchip Technology Inc.
Note: Unless otherwise indicated, VIN =EN=12V, C
OUT =C
IN =2X10µF, L=15µH, V
OUT =3.3V, I
LOAD =200mA,
TA=+25°C.
FIGURE 2-19: Load Transient Response.
FIGURE 2-20: Line Transient Response.
VOUT = 3.3V
IOUT = 100 mA to 600
mA
VOUT
AC coupled
100 mV/DIV
IOUT
200 mA/DIV
100 µs/DIV
VOUT = 3.3V
IOUT = 100 mA
VIN = 8V to 12V Step
VOUT
AC coupled
100 mV/DIV
VIN
2V/DIV
10 µs/DIV
2011-2013 Microchip Technology Inc. DS20005004C-page 9
MCP16301/H
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
3.1 Boost Pin (BOOST)
The high side of the floating supply used to turn the
integrated N-Channel MOSFET on and off is
connec ted to the boost pin .
3.2 Ground Pin (GND)
The ground or return pin is used for circuit ground
connection. The length of the trace from the input cap
return, output cap return and GND pin should be made
as short as possible to minimize the noise on the GND
pin.
3.3 Feedback Voltage Pin (V FB)
The VFB pin is used to provide output voltage regulation
by using a resistor divider. The VFB voltage will be
0.800V typical with the output voltage in regulation.
3.4 Enable Pin (EN)
The EN pin is a logic-level input used to enable or
disable the device switching, and lower the quiescent
current whi le disa bled. A lo gic hig h (> 1.4V) will en able
the regulator output. A logic low (< 0.4V) will ensure
that the regulator is disabled.
3.5 Power Supply Input Voltage Pin
(VIN)
Connect the input voltage source to VIN. The input
source should be decoupled to GND with a
4.7 µF - 20 µF capacitor, depending on the impedance
of the source and output current. The input capacitor
provides AC current for the power switch and a stable
voltage source for the internal device power. This
capacitor should be connected as close as possible to
the VIN and GND pins. For lighter load applications, a
1 µF X7R (or X5R , for limited te mperature r ange, -40 to
+85°C) ceramic capacitor can be used.
3.6 Switch Pin (SW)
The Switch Node pin is connected internally to the
N-Channel switch, and externally to the SW node
consisting of the inductor and Schottky diode. The SW
node ca n rise very f ast, as a res ult of the inte rnal switc h
turning on. The external Schottky diode should be
connected close to the SW node and GND.
TABLE 3-1: PIN FUNCTION TABLE
MCP16301/H
SOT-23 Symbol Description
1BOOST
Boost voltage that drives the internal NMOS control switch. A bootstrap capacitor is
connected between the BOOST and SW pins.
2 GND Ground pin.
3V
FB Output voltage feedback pin. Connect VFB to an external resistor divider to set the
output voltage.
4 EN Enable pin. Logic high enables the operation. Do not allow this pin to float.
5V
IN Input supply voltage pin for power and internal biasing.
6 SW Output switch node, connects to the inductor, freewheeling diode and the bootstrap
capacitor.
MCP16301/H
DS20005004C-page 10 2011-2013 Microchip Technology Inc.
NOTES:
2011-2013 Microchip Technology Inc. DS20005004C-page 11
MCP16301/H
4.0 DETAILED DESCRIPTION
4.1 Device Overview
The MCP16301/H devices are high-input voltage
step-down regulators, capable of supplying 600 mA to
a regulated output voltage from 2.0V to 15V. Internally,
the trimmed 500 kHz oscillator provides a fixed
frequency, while the Peak Current Mode Control
architecture varies the duty cycle for output voltage
regulati on. An int ernal flo ating d river is used to turn the
high-side integrated N-Channel MOSFET on and off.
The power for this driver is derived from an external
boost capacitor whose energy is supplied from a fixed
volt age rangi ng from 3.0V to 5.5 V, typically the input or
output vol tage of the converter . For applications with an
output voltage outside of this range, 12V for example,
the boos t capa citor bias c an be deri ved from t he output
using a simple Zener diode regulator.
4.1.1 INTERNAL REFERENCE VOLTAGE
(VREF)
An integ rated prec ise 0.8 V reference combined with an
external resistor divider sets the desired converter
output voltage. The resistor divider range can vary
without affecting the control system gain. High-value
resistors consume less current, but are more
susceptible to noise.
4.1.2 INTERNAL COMPENSATION
All control system components necessary for stable
operation over the entire device operating range are
integrated, including the error amplifier and inductor
current s lope comp ensation . To add the proper amou nt
of slope compensation, the inductor value changes
along with the output voltage (see Table 5-1).
4.1.3 EXTERN AL COMP ONE NTS
External components consist of:
• input capacitor
• ou tput filter (ind uctor and capacitor)
• freewheeling diode
• boost capacitor
• boost blocking diode
• resistor divider.
The sel ection of the extern al ind uctor, output ca pacito r,
input capacitor and freewheeling diode is dependent
upon the output voltage and the maximum output
current.
4.1.4 ENABLE INPUT
Enable input, (EN), is used to enable and disable the
device . If disabled , the MCP163 01/H devi ces cons ume
a minimal current from the input. Once enabled, the
internal soft start controls the ou tput voltage rate of rise,
preventing high-inrush current and output voltage
overshoot.
4.1.5 SOFT START
The internal reference voltage rate of rise is controlled
during s tartup, m inimizing the output v oltag e overshoot
and the inrush current.
4.1.6 UNDERVOLTAGE LOCKOUT
An integrated Undervoltage Lockout (UVLO) prevents
the con verter from st arting until the input v oltage i s high
enough for normal operation. The converter will
typically start at 3.5V and operate down to 3.0V.
Hysteresis is added to prevent starting and stopping
duri ng startu p, as a result of load ing th e input voltage
source.
4.1.7 OVERTEMPERATURE
PROTECTION
Overtemperature protection limits the silicon die
temperat ure to +150°C by turning the converter off. The
normal switc hi ng res um es at +120 °C.
MCP16301/H
DS20005004C-page 12 2011-2013 Microchip Technology Inc.
FIGURE 4-1: MCP16301/H Block Diagram.
4.2 Functional Description
4.2.1 STEP-DOWN OR BUCK
CONVERTER
The MCP16301/H devices are non-synchronous,
step-down or buck converters, capable of stepping
input voltages ranging from 4V to 30V (MCP16301) or
36V (MCP16301H) down to 2.0V to 15V for VIN >V
OUT.
The integrated high-side switch is used to chop or
modula te the input volt age using a co ntrolled duty cy cle
for output voltage regulation. High efficiency is
achiev ed by using a low-res ist ance swi tch, lo w forwa rd
drop diode, low equivalent series resistance (ESR),
inducto r an d cap aci tor. When the swit ch is turn ed on, a
DC voltage is applied to the inductor (VIN –V
OUT),
resulting in a positive linear ramp of inductor current.
When the switch turns off, the applied inductor voltage
is equal to -VOUT, resulting in a negati ve line ar ram p of
inductor current (ignoring the forward drop of the
Schottky diode).
For steady-state, continuous inductor current
operation, the positive inductor current ramp must
equal the negative current ramp in magnitude. While
opera ting in steady st ate, the switch duty c ycle mus t be
equal to the relationship of VOUT/VIN for constant
output voltage regulation, under the condition that the
inductor current is continuous or never reaches zero.
For discontinuous inductor current operation, the
steady-state duty cycle will be less than VOUT/VIN to
maintain voltage regulation. The average of the
chopped input voltage or SW node voltage is equal to
the output voltage, while the average of the inductor
current is equal to the output current.
Schottky
Diode COUT
CBOOST
Slope
Comp
PWM
Latch
+
-
Overtemp
Precharge R
Comp
Amp
+
-
CCOMP
RCOMP
HS
Drive
CS
VREG
BG
REF
SS
VREF OTEMP
Boost
Pre
Charge
500 kHz OSC
S
VOUT
VOUT
RSENSE
GND
Boost Diode
VIN
EN
RTOP
RBOT
BOOST
SW
GND
FB
VREF
SHDN all blocks
+
-
CIN
+
+
Schottky
Diode COUT
VOUT
SW
VIN +
-
SW on off on on
off
IL
IL
L
IOUT
VOUT
VIN
0
SW on off on on
off
ILIOUT
VIN
0
Contin uo us Ind uctor Current Mo de
Discontinuous Inductor Current Mode
2011-2013 Microchip Technology Inc. DS20005004C-page 13
MCP16301/H
FIGURE 4-2: Step-Down Converter.
4.2.2 PEAK CURRENT MODE CONTROL
The MCP16301/H devices integrate a Peak Current
Mode Control architecture, resulting in superior AC
regulation while minimizing the number of voltage loop
compensation components, and their size, for
integration. Peak Current Mode Control takes a small
portion of the inductor current, replicates it and
compares this replicated current sense signal to the
output of the integrated error voltage. In practice, the
inductor current and the internal switch current are
equal during the switch-on time. By adding this peak
current sense to the system control, the step-down
power tra in sys tem is redu ce d fro m a 2nd order to a 1st
order. This reduces the system complexity and
increases its dynamic performance.
For Pulse-Width Modulation (PWM) duty cycles that
exceed 50%, the control system can become bimodal
where a wide pulse followed by a short pulse repeats
instead of the desire d f ixed p ulse width . To prevent this
mode of operation, an internal compensating ramp is
summed into the current shown in Figure 4-1.
4.2.3 PULSE-WIDTH MODULATION
(PWM)
The internal oscillator periodically starts the switching
period, which, for MCP16301, occurs every 2 µs or
500 kHz. With the integrated switch turned on, the
inductor current ramps up until the sum of the current
sense and slope compensation ramp exceeds the
integrated error amplifier output. The error amplifier
output slews up or down to increase or decrease the
inducto r peak curren t feeding in to the output LC fi lter. If
the regu lat ed out put v olta ge is lower than it s t arget , the
inverting error amplifier output rises. This results in an
increase in the inductor current to correct the errors in
the output voltage.
The fixed-frequency duty cycle is terminated when the
sensed inductor peak current, summed with the
internal slope compensation, exceeds the output
volt age of the error amplifi er . The PW M latch is re set by
turning off the internal switch and preventing it from
turning on until the beginning of the next cycle. An
overtemperature signal, or boost cap undervoltage,
can also reset the PWM latch to asynchronously
terminate the cycle.
4.2.4 HIGH-SIDE DRIVE
The MCP16301/H devices feature an integrated
high-side N-Channel MOSFET for high efficiency
step-dow n power co nversion. An N-Channel MOSFET
is used for its low resistance and size (instead of a
P-Channel MOSFET). The N-Channel MOSFET gate
must be driven above its source to fully turn on the
transistor. A gate-drive voltage above the input is
necessary to turn on the high-side N-Channel. The
high-side drive voltage should be between 3.0V and
5.5V. The N-Channel source is connected to the
inductor and Schottky diode, or switch node.
When the switch is off, the inductor current flows
through the Schottky diode, providing a path to
recharge the boost cap from the boost voltage source,
typically the output voltage for 3.0V to 5.0V output
applic atio ns . A b oos t-bl oc ki ng diode i s use d to prevent
current flow from the boost cap back into the output
during the internal switch-on time. Prior to startup, the
boost cap has no st ored charge to drive the switc h. An
internal regulator is used to precharge the boost cap.
Once precharged, the switch is turned on and the
inductor current flows. When the switch turns off, the
inductor current free-wheels through the Schottky
diode, providing a path to recharge the boost cap.
Worst case conditions for recharge occur when the
switch turns on for a very short duty cycle at light load,
limiting the inductor current ramp. In this case, there is
a small amount of time for the boost capacitor to
recharge. For high input voltages there is enough pre-
charge current to replace the boost cap charge. For
input voltages above 5.5V typical, the MCP16301/H
devices will regulate the output voltage with no load.
After starting, the MCP16301/H devices will regulate
the output voltage until the input voltage decreases
below 4V. See Figure 2-16 for device range of opera-
tion over input voltage, output voltage and load.
4.2.5 ALTERNATIVE BOOST BIAS
For 3.0V to 5.0V output voltage applications, the boost
supply is typically the output voltage. For applications
with 3.0V < VOUT < 5.0V, an alternative boost supply
can be used.
Alternative boost supplies can be from the input, input
derived, output derived or an auxiliary system voltage.
For low voltage output applications with unregulated
input voltage, a shunt regulator derived from the input
can be used to derive the boost supply. For
applications with high output voltage or regulated high
input voltage, a series regulator can be used to derive
the boost supply.
MCP16301/H
DS20005004C-page 14 2011-2013 Microchip Technology Inc.
FIGURE 4-3: Shunt and External Boost Supply.
Shunt Boost Supply Regulation is used for low output
volt age converte rs op era tin g from a w i de ra ngi ng inp ut
source. A regulated 3.0V to 5.5V supply is needed to
provide high-side drive bias. The shunt uses a Zener
diode to clamp the voltage within the 3.0V to 5.5V
range using the resistance shown in Figure 4-3.
To calculate the shunt resistance, the boost drive
current can be estimated using Equation 4-1.
IBOOST_TYP for 3.3V Boost Supply = 0.6 mA
IBOOST_TYP for 5.0V Boost Supply = 0.8 mA
EQUATION 4-1: BOOST CURRENT
CB
VOUT
VIN
CIN
COUT
SW
EN
FB
L
RTOP
VIN
FW Diode
2V
12V
VZ = 5.1V
C1
RSH
CB
VOUT
VIN
CIN
COUT
SW
BOOST
GND
EN
FB
L
RTOP
RBOT
VIN
Boost Diode
FW Diode
2V
12V
3.0V to 5.5V External Supply
RBOT
MCP16301/H
MCP16301/H
Boost Diode
BOOST
GND
IBOOST IBOOST_TYP 1.5
mA=
2011-2013 Microchip Technology Inc. DS20005004C-page 15
MCP16301/H
To calculate the shunt resis tance, th e maximum IBOOST
and IZ current are used at the minimum input voltage
(Equation 4-2).
EQUATION 4-2: SHUNT RESISTANCE
VZ and IZ can be found on the Zener diode
manufacturer’s data sheet (typical IZ=1mA).
FIGURE 4-4: Series Regulator Boost Supply.
Series reg ulator app lication s use a Ze ner diode t o drop
the excess voltage. The series regulator bias source
can be input or output voltage derived, as shown in
Figure 4-4. For proper circuit operation, the boost
supply must remain between 3.0V and 5.5V at all
times.
RSH VINMIN VZ
–
IBoost IZ
+
------------------------------=
CBVOUT
VIN
CIN
COUT
SW
BOOST
GND
EN
FB
L
RTOP
RBOT
VIN
Boost Diode
FW Diode
12V
15V to 36V
CB
VIN
CIN
SW
BOOST
GND
EN
FB
L
VIN
Boost Diode
FW Diode
2V
12V
VZ = 7.5V
VZ = 7.5V
VOUT
RTOP
RBOT
COUT
MCP16301/H
MCP16301/H
MCP16301/H
DS20005004C-page 16 2011-2013 Microchip Technology Inc.
NOTES:
2011-2013 Microchip Technology Inc. DS20005004C-page 17
MCP16301/H
5.0 APPLICATION INFORMATION
5.1 Typical Applications
The MCP16301/H step-down converters operate over
a wide input voltage range, up to 36V maximum.
Typical applications include generating a bias or VDD
volt age for the PIC® m icrocontr oller produc t line, dig ital
control system bias supply for AC-DC converters, 24V
industrial input and similar applications.
5.2 Adjustable Output Voltage
Calculations
To calculate the resistor divider values for the
MCP16301/H devices, Equation 5-1 can be used.
RTOP is co nne cted t o VOUT, RBOT is connec ted to GND
and both are connected to the VFB input pin.
EQUATION 5-1:
EXAMPL E 5-1:
EXAMPL E 5-2:
The trans co ndu ctance error amplifier gain is co ntro lle d
by it s internal impedance. The external divider re sistors
have no effect on system gain, so a wide range of
values can be used. A 10 k resi stor is recommended
as a good trade-off for quiescent current and noise
immunity.
5.3 General Design Equations
The st ep-down co nverter duty cycle ca n be estima ted
using Equation 5-2, while operating in Continuous
Inductor Current mode. This equation also counts the
forward drop of the freewheeling diode and internal
N-Channel MOSFET switch voltage drop. As the load
current increases, the switch voltage drop and diode
voltage drop increase, requiring a larger PWM duty
cycle to maintain the output voltage regulation. Switch
voltage drop is estimated by multiplying the switch
current time s the sw it ch res is t anc e or RDSON.
EQUATION 5-2: CONTINUOUS INDUCTOR
CURRENT DUTY CYCLE
The MCP16301/H devices feature an integrated slope
compensation to prevent the bimodal operation of the
PWM duty cycle. Internally, half of the inductor current
down slope is summed with the internal current sense
signal. For the proper amount of slope compensation,
it is recommended to keep the inductor down-slope
curr ent con stant by varyin g the ind uctance with VOUT,
where K = 0.22V/µH.
EQUATION 5-3:
For VOUT = 3.3V, an inductance of 15 µH is
recommended.
RTOP RBOT VOUT
VFB
-------------1–
=
VOUT =3.3V
VFB =0.8V
RBOT =10k
RTOP = 31.25 k (sta nda rd value = 31.2 k)
VOUT =3.3V
VOUT =5.0V
VFB =0.8V
RBOT =10k
RTOP = 52.5 k (standard value = 52.3 k)
VOUT =4.98V
TABLE 5-1: RECOMMENDED INDUCTOR
VALUES
VOUT KL
STANDARD
2.0V 0.20 10 µH
3.3V 0.22 15 µH
5.0V 0.23 22 µH
12V 0.21 56 µH
15V 0.22 68 µH
DVOUT VDiode
+
VIN ISW RDSON
–
-------------------------------------------------------=
KV
OUT L
=
MCP16301/H
DS20005004C-page 18 2011-2013 Microchip Technology Inc.
5.4 Input Capacitor Selection
The step -dow n co nve rter i nput capacitor mus t fil ter th e
high input ripple current, as a result of pulsing or
choppi ng the i nput v olt age . The in put vo lta ge p in of the
MCP16301/H devices is used to supply voltage for the
power train and as a source for internal bias. A low
equivalent series resistance (ESR), preferably a
ceramic capacitor, is recommended. The necessary
capacitance is dependent upon the maximum load
current and source impedance. Three capacitor
parameters to keep in mind are the voltage rating,
equivalent series resistance and the temperature
rating. For wide temperature range applications, a
multi-layer X7R dielectric is mandatory, while for
applications with limited temperature range, a
multi-l ayer X5R die lectri c is acc ept able. Typical ly, input
capacitance between 4.7 µF and 10 µF is sufficient for
most applications. For applications with 100 mA to
200 mA load, a 1 µF X7R capacitor can be used,
depending on the input source and its impedance.
The inpu t capacitor vo ltage rating should be a minimum
of VIN plus margin. Table 5-2 contains the
recommended range for the input capacitor value.
5.5 Output Cap acitor Selection
The output capacitor helps in providing a stable output
volt age durin g sudden load t ransient s, and r educes th e
outp ut vol tage r ippl e. As w ith t he in put c apacito r, X 5R
and X7R ceramic capacitors are well suited for this
application.
The MC P16301/H de vices a re intern ally co mpensate d,
so the output capacitance range is limited. See
Table 5-2 for the recommended output capacitor range.
The amount and type of output capacitance and
equivalent series resistance will have a significant
effect on the output ripple voltage and system stability.
The range of the output capacitance is limited due to
the integrated compensation of the MCP16301/H
devices.
The outpu t voltag e capac itor volt age rating should be a
minimum of V OUT, plus marg in.
Table 5-2 contains the recommended range for the
input and output capacitor value:
5.6 Inductor Selection
The MCP16301/H devices are designed to be used
with small surface mount inductors. Several
specifications should be considered prior to selecting
an inductor. To optimize system performance, the
inductance value is determined by the output voltage
(Table 5-1) so the inductor ripple current is somewhat
constant over the output voltage range.
EQUATION 5-4: INDUCTOR RIPPLE
CURRENT
EXAMPL E 5-3:
EQUATION 5-5: INDUCTOR PEAK
CURRENT
An inductor saturation rating minimum of 760 mA is
recommended. Low ESR inductors result in higher
system efficiency. A trade-off between size, cost and
efficiency is made to achieve the desired results.
TABLE 5-2: CAPACITOR VALUE RANGE
Parameter Min Max
CIN 2.2 µF none
COUT 20 µF none
IL
VL
L
------t
ON
=
VIN =12V
VOUT =3.3V
IOUT =600mA
ILPK
IL
2
-------- I OUT
+=
Inductor ripp le cu rrent = 319 mA
Inductor peak current = 760 mA
2011-2013 Microchip Technology Inc. DS20005004C-page 19
MCP16301/H
5.7 Freewheeling Diode
The freewheeling diode creates a path for inductor
current flow after the internal switch is turned off. The
average diode current is dependent upon output load
current at duty cycle (D). The efficiency of the converter
is a function of the forward drop and speed of the
freewhe eli ng dio de. A lo w forwa r d dr op Sc ho ttk y d iod e
is recommended. The current rating and voltage rating
of the diode is application dependent. The diode
volt age rating shoul d be a minimum of VIN, plus margi n.
For example, a diode rating of 40V should be used for
an application with a maximum input of 30V. The
average diode current can be calculated using
Equation 5-6.
EQUATION 5-6: DIODE AVERAGE
CURRENT
EXAMPL E 5-4:
A 0.5A to 1A diode is recommended.
5.8 Boost Diode
The boost diode is used to provide a charging p ath from
the low voltage gate drive source, while the switch
node is low. The boo st di od e blocks the high v ol t ag e of
the switch node from feeding back into the output
volt age when the switc h is turned on, forcin g the switc h
node high.
A standard 1N4148 ultra-fast diode is recommended
for its rec ov ery spee d, hig h vo lt age blockin g capability,
availa bility and cost. The v olt age ra ting re quired for th e
boost diode is VIN.
TABLE 5-3: MCP16301/H RECOMMENDED
3.3V INDUCTORS
Part Number
Value
(µH)
DCR ()
ISAT (A)
Size
WxLxH
(mm)
Coilcraft
ME3220 15 0.52 0.90 3.2x2.5x2.0
LPS4414 15 0.440 0.92 4.3x4.3x1.4
LPS6235 15 0.125 2.00 6.0x6.0x3.5
MSS6132 15 0.135 1.56 6.1x6.1x3.2
MSS7341 15 0.057 1.78 7.3x7.3x4.1
ME3220 15 0.520 0.8 2.8x3.2x2.0
LPS3015 15 0.700 0.61 3.0x3.0x1.4
Wurth Elektronik Group
744025 15 0.400 0.900 2.8x2.8x2.8
744031 15 0.255 0.450 3.8x3.8x1.65
744042 15 0.175 0.75 4.8x4.8x1.8
Coiltronics
SD12 15 0.48 0.692 5.2x5.2x1.2
SD18 15 0.266 0.831 5.2x5.2x1.8
SD20 15 0.193 0.718 5.2x5.2x2.0
SD3118 15 0.51 0.75 3.2x3.2x1.8
SD52 15 0.189 0.88 5.2x5.5.2.0
Sumida Corporation
CDPH4D19F 15 0.075 0.66 5.2x5.2x2.0
CDRH3D161H 15 0.328 0.65 4.0x4.0x1.8
TDK - EPC
VLF30251 15 0.5 0.47 2.5x3.0x1.2
VLF4012A 15 0.46 0.63 3.5x3.7x1.2
VLF5014A 15 0.28 0.97 4.5x4.7x1.4
B82462G4332M 15 0.097 1.05 6x6x2.2
TABLE 5-4: FREEWHEELING DIODES
App Manufacturer Part
Number Rating
12 VIN
600 mA Diodes®
Incorporated DFLS120L-7 20V, 1A
24 VIN
100 mA Diodes
Incorporated B0540 Ws -7 40V, 0.5A
18 VIN
600 mA Diodes
Incorporated B130L-13-F 30V, 1A
ID1AVG 1D–IOUT
=
IOUT =0.5A
VIN =15V
VOUT =5V
D=5/15
ID1AVG =333mA
MCP16301/H
DS20005004C-page 20 2011-2013 Microchip Technology Inc.
For low boost voltage applications, a small Schottky
diode with the appropriately rated voltage can be used
to lower the forward drop, increasing the boost supply
for gate drive.
5.9 Boost Capacitor
The boost capacitor is used to supply current for the
internal high side drive circuitry that is above the input
volt age. The boost capacitor must store enough energy
to completely drive the high side switch on and off. A
0.1 µF X5R or X7R capacitor is recommended for all
appli cations. The boost capacitor maximum v oltage is
5.5V, so a 6.3V or 10V rated capacitor is
recomm ended. In cas e of a noise-s ensitive ap plication,
an additi onal re sisto r in s eries wi th the bo ost ca pac itor,
that will reduce the high-frequency noise associated
with switching power supplies, can be added. A typical
value for the resistor is 82.
5.10 Thermal Calculations
The MC P16 301 /H de vices are available in a SO T-23-6
package. By calculating the power dissipation and
applying the package thermal resistance (JA), the
junction temperature is estimated. The maximum
continuous junction temperature rating for the
MCP16301/H devices is +125°C.
To quickly estimate the internal power dissipation for
the switching step-down regulator, an empirical
calculation using measured efficiency can be used.
Given the measured efficiency, the internal power
dissipation is estimated by Equation 5-7. This power
dissipation includes all internal and external
component losses. For a quick internal estimate,
subtract the estimated Schottky diode loss and inductor
ESR loss from the PDIS calculation in Equation 5-7.
EQUATION 5-7: TOTAL POWER
DISSIPATION ESTIMATE
The difference between the fir st term , i npu t p ower, and
the second term, power delivered, is the total system
power dissipation. The freewheeling Schottky diode
losses are determined by calculating the average diode
current and multiplying by the diode forward drop. The
inductor losses are estimated by PL=I
OUT2xL
ESR.
EQUATION 5-8: DIODE POWER
DISSIPATION ESTIMATE
EXAMPL E 5-5:
5.11 PCB Layout Information
Good printed circuit board layout techniques are
important to any switching circuitry, and switching
power supplies are no different. When wiring the
switching high-current paths, short and wide traces
should b e used. Th erefore , it is import ant th at the inp ut
and outp ut capaci tors be place d as close as p ossible to
the MCP16301/H devices to minimize the loop area.
The feedback resistors and feedback signal should be
routed aw ay from the switchi ng node and the s witching
current l oop. W hen po ssib le, gro und pl anes and tra ces
should be used to help shield the feedback signal and
minimize noise and magnetic interference.
A good MC P1 630 1/H l ayo ut s t a rts with CIN plac ement.
CIN suppl ies cu rrent to the input of th e cir cui t w hen the
switch is turned on. In addition to supplying
high-frequency switch current, CIN also provides a
stable voltage source for the internal MCP16301/H
circuitry. Unstable PWM operation can result if there
are e xcessi ve trans ient s o r ringi ng on the VIN pin of the
MCP16301/H devices. In Figure 5-1, CIN is placed
close to pin 5. A ground plane on the bottom of the
board provides a low resistive and inductive path for
the return current. The next priority in placement is the
freewheeling current loop formed by D1, COUT and L,
while strategically placing COUT return close to CIN
return. Next, CB and DB sh oul d be pl ace d between the
boost pin and the switch node pin SW. This leaves
spac e close to the VFB pin of the MCP1 6301/H de vices
to place RTOP and RBOT. RTOP and RBOT are routed
away from the Sw itch node so noise is not coupl ed into
the high-impedance VFB input.
VOUT IOUT
Efficiency
-------------------------------
VOUT IOUT
–PDis
=
PDiode VF1D–IOUT
=
VIN =10V
VOUT =5.0V
IOUT =0.4A
Efficiency = 90%
Total System Dissipation = 222 mW
LESR =0.15
PL=24mW
Diode VF = 0.50
D=50%
PDiode =125mW
MCP16301/H internal power dissipation estimate:
PDIS -P
L-P
DIODE =73mW
JA =198°C/W
Estimated Junction
Temperature Rise =+14.5°C
2011-2013 Microchip Technology Inc. DS20005004C-page 21
MCP16301/H
FIGURE 5-1: MCP16301/H SOT-23-6 Recommended Layout, 600 mA Design.
Bottom Plane is GND
RBOT RTOP 10 Ohm
VOUT
VIN
2xC
IN
REN
EN
CBDB
1
GND
GND
L
D1
COUT
COUT
Bottom Trace
MCP16301/H
CB
VIN COUT
SW
BOOST
GND
EN
FB
L
DB
D1
3.3V
4V to 30V 10 Ohm
REN
VOUT
RTOP
RBOT
1
6
3
2
5
4
VIN
CIN
MCP16301/H
Component Value
CIN 10 µF
COUT 2x10µF
L15µH
RTOP 31.2 k
RBOT 10 k
D1 B140
DB1N4148
CB100 nF *Note: The 10 res istor is used wit h network analyz er , to measure
system gain and phase.
MCP16301/H
DS20005004C-page 22 2011-2013 Microchip Technology Inc.
FIGURE 5-2: MCP16301/H SOT-23-6 D2 Recommended Layout, 200 mA Design.
GND
Bottom Plane is GND
REN
COUT
VIN
GND
VOUT
GND
L
DB
RTOP
RBOT
CB
D1
CIN
MCP16301/H
CBVOUT
VIN COUT
SW
BOOST
GND
EN
FB
L
RTOP
VIN
DB
D1
3.3V
4V to 30V
REN
Component Value
CIN 1µF
COUT 10 µF
L15µH
RTOP 31.2 k
RBOT 10 k
D1 PD3S130
CB100 nF
REN 1M
MCP16301/H
1
6
3
2
5
4
RBOT
CIN
2011-2013 Microchip Technology Inc. DS20005004C-page 23
MCP16301/H
6.0 TYPICAL APPLICATION CIRCUITS
FIGURE 6-1: Typical Application 30V VIN to 3.3V VOUT.
Component Value Manufacturer Part Number Comment
CIN 2 x 4.7 µF Taiyo Yuden
Co., Ltd. UMK325B7475KM-T Cap. 4.7 µF 50V Ceramic X7R 1210 10%
COUT 2 x 10 µF Taiyo Yuden
Co., Ltd. JMK212B7106KG-T Cap. 10 µF 6.3V Ceramic X7R 0805 10%
L 15 µH Coilcraft MSS6132-153ML MSS6132 15 µH Shielded Power Inductor
RTOP 31.2 kPanasonic®-ECG ERJ-3EKF3162V Res. 31.6 k 1/10W 1% 0603 SMD
RBOT 10 kPanasonic-ECG ERJ-3EKF1002V Res. 10.0 k 1/10W 1% 06 03 SMD
FW Diode B140 Diodes
Incorporated B140-13-F Diode Schottky 40V 1A SMA
Boost Diode 1N4148 Diodes
Incorporated 1N4448WS-7-F Diode Switch 75V 200 mW SOD-323
CB100 nF AVX Corporation 0603YC104KAT2A Cap. 0.1 µF 16V Ceramic X7R 0603 10%
CB
VOUT
VIN
CIN
COUT
SW
BOOST
GND
EN
FB
L
VIN
Boost Diode
FW Diode
3.3V
6V to 30V
RTOP
RBOT
MCP16301/H
MCP16301/H
DS20005004C-page 24 2011-2013 Microchip Technology Inc.
FIGURE 6-2: Typical Application 15V – 30V Input; 12V Output.
CB
SW
BOOST
GND
EN
FB
L
Boost Diode
FW Diode
12V
15V to 30V
DZ
Component Value Manufacturer Part Number Comment
CIN 2 x 4.7 µF Taiyo Yuden
Co., Ltd. UMK325B7475KM-T Cap. 4.7 uF 50V Ceramic X7R 1210 10%
COUT 2 x 10 µF Taiyo Yuden
Co., Ltd. JMK212B7106KG-T Cap. Ceramic 10 µF 25V X7R 10% 1206
L 56 µH Coilcraft MSS6132-153ML MSS7341 56 µH Shielded Power Inductor
RTOP 140 kPanasonic-ECG ERJ-3EKF3162V Res. 140 k 1/10W 1% 0603 SMD
RBOT 10 kPanasonic-ECG ERJ-3EKF1002V Res. 10.0 k 1/10W 1% 0603 SMD
FW Diode B140 Diodes
Incorporated B 140-13-F Diode Sc hottky 40V 1A S M A
Boost Diode 1N4148 Diodes
Incorporated 1N4448WS-7-F Diode Switch 75V 200 mW SOD-323
CB100 nF AVX Corporation 0603YC104KAT2A Cap. 0.1 µF 16V Ceramic X7R 0603 10%
DZ7.5V Zener Diodes
Incorporated MMSZ5236BS-7-F Diode Zener 7.5V 200 mW SOD-323
MCP16301/H VOUT
VIN COUT
RTOP
RBOT
VIN
CIN
2011-2013 Microchip Technology Inc. DS20005004C-page 25
MCP16301/H
FIGURE 6-3: Typical Application 12V Input; 2V Output at 600 mA.
CB
SW
BOOST
GND
EN
FB
L
VIN
Boost Diode
FW Diode
2V
12V
DZ
RTOP
VOUT
COUT
CIN
VIN
RBOT
Component Value Manufacturer Part Number Comment
CIN 10 µF Taiyo Yuden
Co., Ltd. EMK316B7106KL-TD Cap. Ceramic 10 µF 16V X7R 10% 1206
COUT 22 µF Taiyo Yuden
Co., Ltd. JMK316B7226ML-T Cap. Ceramic 22 µF 6.3V X7R 1206
L 10 µH Coilcraft MSS4020-103ML 10 µH Shielded Power Inductor
RTOP 15 kPanasonic-ECG ERJ-3EKF1502V Res. 15.0 k 1/10W 1% 0603 SMD
RBOT 10 kPanasonic-ECG ERJ-3EKF1002V Res. 10.0 k 1/10W 1% 0603 SMD
FW Diode PD3S Diodes
Incorporated PD3S120L-7 Diode Schottky 1A 20V POWERDI323
Boost Diode 1N4148 Diodes
Incorporated 1N4448WS-7-F Diode Switch 75V 200 mW SOD-323
CB100 nF AVX Corporation 0603YC104KAT2A Cap. 0.1 µF 16V Ceramic X7R 0603 10%
DZ7.5V Zener Diodes
Incorporated MMSZ5236BS-7-F Diode Zener 7.5V 200 mW SOD-323
MCP16301/H
MCP16301/H
DS20005004C-page 26 2011-2013 Microchip Technology Inc.
FIGURE 6-4: Typical Application 10V to 16V VIN to 2.5V VOUT.
CB
SW
BOOST
GND
EN
FB
L
Boost Diode
FW Diode
2.5V
10V to 16V
DZ
CZ
MCP16301/H
RBOT
RTOP
VOUT
RZ
VIN
CIN
VIN COUT
Componen t Value Man ufac tur er Part Number Comme nt
CIN 10 µF Taiyo Yuden
Co., Ltd. TMK316B7106KL-TD Cap. Ceramic 10 µF 25V X7R 10% 1206
COUT 22 µF Taiyo Yuden
Co., Ltd. JMK316B7226ML-T Cap. Ceramic 22 µF 6.3V X7R 1206
L 12 µH Coilcraft LPS4414-123MLB LPS4414 12 µH Shielded Power Inductor
RTOP 21.5 kPanaso nic -ECG ERJ-3EKF2152V Res. 21. 5 k 1/10W 1% 0603 SMD
RBOT 10 kPanasonic- ECG ERJ-3EKF100 2V Re s. 10.0 k 1/10W 1% 0603 SMD
FW Diode DFLS120 Diodes
Incorporated DFLS120L-7 Diode Schottky 20V 1A POWERDI123
Boost Diode 1N4148 Diodes
Incorporated 1N444 8WS - 7-F Diode Swit ch 75V 200 mW SOD-323
CB100 nF AVX Corporation 0603YC104KAT2A Cap. 0.1 µF 16V Ceramic X7R 0603 10%
DZ7.5V Zener Diodes
Incorporated MMSZ5236BS-7-F Diode Zener 7.5V 200 mW SOD-323
CZ1 µF Taiyo Yuden
Co., Ltd. LMK107B7105KA-T Cap. Ceramic 1.0 µF 10V X7R 0603
RZ1kPanasonic-ECG ERJ-8ENF1001V Res. 1.00 k 1/4W 1% 1206 SMD
2011-2013 Microchip Technology Inc. DS20005004C-page 27
MCP16301/H
FIGURE 6-5: Typical Application 4V to 30V VIN to 3.3V VOUT at 150 mA.
CB
SW
BOOST
GND
EN
FB
L
VIN
Boost Diode
FW Diode
3.3V
4V to 30V
REN
CIN RTOP
VOUT
VIN COUT
RBOT
MCP16301/H
Component Value Manufacturer Part Number Comment
CIN 1 µF Taiyo Yuden
Co., Ltd. GMK212B7105KG-T Cap. Ceramic 1.0 µF 35V X7R 0805
COUT 10 µF Taiyo Yuden
Co., Ltd. JMK107BJ106MA-T Cap. Ceramic 10 µF 6.3V X5R 0603
L 15 µH Coilcraft LPS3015-153MLB Inductor Power 15 µH 0.61A SMD
RTOP 31.2 kPanasonic-ECG ERJ-2RKF3162X Res. 31.6 k 1/10W 1% 0402 SMD
RBOT 10 kPanasonic-ECG ERJ-3EKF1002V Res. 10.0 k 1/10W 1% 0603 SMD
FW Diode B0540 Diodes
Incorporated B0540WS-7 Diode Schottky 0.5A 40V SOD323
Boost Diode 1N414 8 Diodes
Incorporated 1N4448WS-7-F Diode Switch 75V 200 mW SOD-323
CB100 nF TDK Corporation C1005X5R0J104M Cap. Ceramic 0.10 µF 6.3V X5R 0402
REN 10 MPanasonic-ECG ERJ-2RKF1004X Res. 1.00 M 1/10W 1% 0402 SMD
MCP16301/H
DS20005004C-page 28 2011-2013 Microchip Technology Inc.
NOTES:
2011-2013 Microchip Technology Inc. DS20005004C-page 29
MCP16301/H
7.0 PACKAGING INFORMATION
7.1 Package Marking Information
Legend: XX...X Customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanu me ric trac ea bil ity code
Pb-free JEDEC designator for Matte Tin (Sn)
*This package is Pb-fr ee. The Pb- fre e JEDEC designator ( )
can be found on the outer packaging for this package.
Note: I n the ev ent the fu ll Microc hip p art numb er ca nnot be mark ed on one line, it w ill
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
3
e
6-Lead SOT-23 Example
HT25
Part Number Code
MCP16301T-I/CHY HTNN
MCP16301T-E/CH JYNN
MCP16301HT-E/CH AAANY
MCP16301HT-I/CH AAAPY
MCP16301/H
DS20005004C-page 30 2011-2013 Microchip Technology Inc.
b
E
4
N
E1
PIN1IDBY
LASER MARK
D
123
e
e1
A
A1
A2 c
L
L1
φ
2011-2013 Microchip Technology Inc. DS20005004C-page 31
MCP16301/H
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
MCP16301/H
DS20005004C-page 32 2011-2013 Microchip Technology Inc.
6-Lead Plastic Small Outline Transistor (CHY) [SOT-23]
Notes:
1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.127 mm per side.
2. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units MILLIMETERS
Dimension Limits MIN NOM MAX
Number of Pins N 6
Pitch e 0.95 BSC
Outside Lead Pitch e1 1.90 BSC
Overall Height A 0.90 – 1.45
Molded Package Thickness A2 0.89 – 1.30
Standoff A1 0.00 – 0.15
Overall Width E 2.20 – 3.20
Molded Package Width E1 1.30 – 1.80
Overall Length D 2.70 – 3.10
Foot Length L 0.10 – 0.60
Footprint L1 0.35 – 0.80
Foot Angle I0° – 30°
Lead Thickness c 0.08 – 0.26
Lead Width b 0.20 – 0.51
b
E
4
N
E1
PIN1IDBY
LASER MARK
D
123
e
e1
A
A1
A2 c
L
L1
φ
Microchip Technology Drawing C04-028B
2011-2013 Microchip Technology Inc. DS20005004C-page 33
MCP16301/H
6-Lead Plastic Small Outline Transistor (CHY) [SOT-23]
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
MCP16301/H
DS20005004C-page 34 2011-2013 Microchip Technology Inc.
NOTES:
2011-2013 Microchip Technology Inc. DS20005004C-page 35
MCP16301/H
APPENDIX A: REVISION HISTORY
Revision C (November 2013)
The following is the list of modifications:
1. Added new device to the family (MCP16301H)
and related information throughout the
document.
2. Added package markings and drawings for the
MCP16 301 H devic e.
3. Updated the Product Identification System
section.
Revision B (November 2012)
The following is the list of modifications:
1. Added Extended Temperature characteristic.
2. Added 6-lead SOT-23 package version
(CH code).
3. Updated the following characterization charts:
Figure 2-6,2-7,2-8,2-9,2-11,2-12 and 2-13.
4. Updated Section 7.0, Packaging Information.
5. Updated the Product Identification System
section.
Revision A (May 2011)
• Original Releas e of th is Document.
2011-2013 Microchip Technology Inc. DS20005004C-page 36
MCP16301/H
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Examples:
a) MCP16301T-I/CHY: Step-Down Regulator,
Tape and Reel,
Indust rial Temperature,
6LD SOT-23 package
b) MCP16301T-E/CH: Step-Down Regulator,
Tape and Reel,
Extended Temperature,
6LD SOT-23 package
c) MCP16301HT-E/CH: Step-Down Regulator,
Tape and Reel,
Extended Temperature,
6LD SOT-23 package
PART NO. -X /XXX
PackageTemperature
Range
Device
Device: MCP16301T: High-Voltage Step-Down Regulator,
Tape and Reel
MCP16301HT: High-Voltage Step-Down Regulator,
Ta pe and Reel
Temperature Range: E= -40C to +125 C (Extended)
I= -40C to +85C (Industrial)
Package: CH = Plastic Small Outline Transistor (SOT- 23), 6-lead
CHY*= Plastic Small Outline Transistor (SOT-23), 6-lead
*Y = Nickel palladium gold manufacturing designator.
X
Tape
and Reel
2011-2013 Microchip Technology Inc. DS20005004C-page 37
Information contained in this publication regarding device
applications a nd the lik e is pro vid ed only for your c on ve nience
and may be supers eded by u pdates. It is y our res po ns i bil it y to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash
and UNI/O are registered trademarks of Microchip T echnology
Incorporated in the U.S.A. and other countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MTP, SEEVAL and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONIT OR, FanSense, HI-TIDE, In-Circuit Se rial
Programm ing, ICSP, Mindi, MiWi, MPAS M, MPF, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,
Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA
and Z-Scale are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip T echnology Incorporated
in the U.S.A.
GestIC and ULPP are registered trademarks of Microchip
Technology Germany II Gm bH & Co. KG, a subsidiary of
Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2011-2013, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 978-1-62077-622-3
Note the following details of the code protection feature on Microchip devices:
• Microchip products meet the specification contained in their particular Microchip Data Sheet.
• Microchip believes that its family of products is one of the most secure famili es of its kind on t he market today, when used in the
intended manner and under normal conditions.
• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
• Microchip is willing to work with the customer who is concerned about the integrity of their code.
• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is c onstantly evolving. We a t Microc hip are co m mitted to continuously improving the code prot ect ion featur es of our
products. Attempts to break Microchip’ s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hoppi ng
devices, Serial EEPROMs, microperiph erals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
QUALITY MANAGEMENT S
YSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
DS20005004C-page 38 2011-2013 Microchip Technology Inc.
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10/28/13
