NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 Vcro Ic hye@ Id/ Vcr Vice (sat) PACKAGE | DEVICE (sus) (max) (min/max @ I-/Ipg P>* fr TYPE | voLTs| AMPS| @A/V) (V@Aa/A) | WATTS | (MHz) NPN | 2N6032 90 50 | 10-50@50/2.6 | 1.3@50/5 140 30" TO-3 | 9N6033 120 40 | 10-so@ao2 | 1@40/4 140 30 2N6274 100 50 | 30-120@20/4 | 1.2@20/2 250 30 2N6275 120 50 | 30-120@20/4 | 1.2@20/2 250 30 2N6276 140 50 | 30-120@20/4 | 1.2@20/2 250 30 2N6277 150 50 | 30-120@204 | 1.2@20/2 250 30 2N6322 200 30 | 40-150@5/5 | 1.5@20/2 350 10 2N6323 300 30 | 30-150@5/5 | 1.5@20/72 350 10 2N6326 60 30 | 6-30@30/4 | 1.5@15/2 200 3 2N6327 80 30 | 6-30@30/4 | 1.5@15/4 200 3 2N6338 100 25 | 30-120@10/2 | 1@10/1 200 40 2N6340 140 25 | 30-120@10/1 | 1@10/1 200 40 2N6341 150 25 | 30-120@101 | 1@10/1 200 40 2N6354 120 10 | 10-100@10/2 | 1@10/1 140 60' 2N6510 200 7 | 10-50@3/3 | 1.5@3/.6 120 3 2N6511 250 7 |10-s0@a3 | 1.5@4/.8 120 3 2N6512 300 7 |10-s0@43 | 1.5@4/.8 120 3 2N6677 350 Is | >8@15/3 1.5@15/3 175 15 2N6678 400 1s | >8@153 1.5@15/3 175 15 2N6686 160 25 | 25-100@10/2 | 1.5@25/2.5 200 20 2N6687 180 25 | 25-100@10/2 | 1.5@25/2.5 200 20 2N6688 200 25 |20-80@1072 | 1.5@20/2 200 20 . Te = 25C Veer Typical