MMBT3904WT1, NPN MMBT3906WT1, PNP General Purpose Transistors NPN and PNP Silicon http://onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. * Pb-Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Collector -Emitter Voltage MMBT3904WT1 MMBT3906WT1 VCEO Collector -Base Voltage MMBT3904WT1 MMBT3906WT1 VCBO Emitter -Base Voltage MMBT3904WT1 MMBT3906WT1 VEBO Collector Current - Continuous MMBT3904WT1 MMBT3906WT1 IC Value Unit 2 EMITTER Vdc 40 -40 Vdc 60 -40 3 Vdc 1 6.0 -5.0 2 SC-70/SOT-323 CASE 419 STYLE 3 mAdc 200 -200 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation (Note 1) TA = 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature MARKING DIAGRAM Symbol Max Unit PD 150 mW MMBT3904WT1 MMBT3906WT1 RJA 833 C/W AM M 2A M TJ, Tstg -55 to +150 C 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. AM = Specific Device Code 2A = Specific Device Code M = Date Code ORDERING INFORMATION Device Package Shipping MMBT3904WT1 SC-70 3000/Tape & Reel MMBT3906WT1 SC-70 3000/Tape & Reel MMBT3904WT1G SC-70 3000/Tape & Reel MMBT3906WT1G SC-70 3000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2004 March, 2004 - Rev. 4 1 Publication Order Number: MMBT3904WT1/D MMBT3904WT1, NPN MMBT3906WT1, PNP ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 40 -40 - - 60 -40 - - 6.0 -5.0 - - - - 50 -50 - - 50 -50 MMBT3904WT1 40 70 100 60 30 - - 300 - - MMBT3906WT1 60 80 100 60 30 - - 300 - - MMBT3904WT1 - - 0.2 0.3 MMBT3906WT1 - - -0.25 -0.4 MMBT3904WT1 0.65 - 0.85 0.95 MMBT3906WT1 -0.65 - -0.85 -0.95 Unit OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0) (IC = -1.0 mAdc, IB = 0) MMBT3904WT1 MMBT3906WT1 V(BR)CEO Collector -Base Breakdown Voltage (IC = 10 Adc, IE = 0) (IC = -10 Adc, IE = 0) MMBT3904WT1 MMBT3906WT1 Emitter -Base Breakdown Voltage (IE = 10 Adc, IC = 0) (IE = -10 Adc, IC = 0) MMBT3904WT1 MMBT3906WT1 Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = -30 Vdc, VEB = -3.0 Vdc) MMBT3904WT1 MMBT3906WT1 Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = -30 Vdc, VEB = -3.0 Vdc) MMBT3904WT1 MMBT3906WT1 Vdc V(BR)CBO Vdc V(BR)EBO Vdc IBL nAdc ICEX nAdc ON CHARACTERISTICS (Note 2) hFE DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = -0.1 mAdc, VCE = -1.0 Vdc) (IC = -1.0 mAdc, VCE = -1.0 Vdc) (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -50 mAdc, VCE = -1.0 Vdc) (IC = -100 mAdc, VCE = -1.0 Vdc) Collector -Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) - VCE(sat) Base -Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) Vdc VBE(sat) 2. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. http://onsemi.com 2 Vdc MMBT3904WT1, NPN MMBT3906WT1, PNP ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Max 300 250 - - - - 4.0 4.5 - - 8.0 10.0 1.0 2.0 10 12 0.5 0.1 8.0 10 100 100 400 400 1.0 3.0 40 60 - - 5.0 4.0 Unit SMALL-SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) (IC = -10 mAdc, VCE = -20 Vdc, f = 100 MHz) MMBT3904WT1 MMBT3906WT1 fT Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) (VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz) MMBT3904WT1 MMBT3906WT1 Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) (VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz) MMBT3904WT1 MMBT3906WT1 Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) MMBT3904WT1 MMBT3906WT1 Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) MMBT3904WT1 MMBT3906WT1 Small -Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) MMBT3904WT1 MMBT3906WT1 Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) MMBT3904WT1 MMBT3906WT1 Noise Figure (VCE = 5.0 Vdc, IC = 100 Adc, RS = 1.0 k , f = 1.0 kHz) (VCE = -5.0 Vdc, IC = -100 Adc, RS = 1.0 k , f = 1.0 kHz) MMBT3904WT1 MMBT3906WT1 MHz Cobo pF Cibo pF k hie X 10- 4 hre hfe - mhos hoe NF dB SWITCHING CHARACTERISTICS Symbol Min Max Unit Delay Time Characteristic (VCC = 3.0 Vdc, VBE = - 0.5 Vdc) (VCC = -3.0 Vdc, VBE = 0.5 Vdc) Condition MMBT3904WT1 MMBT3906WT1 td - - 35 35 ns Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) (IC = -10 mAdc, IB1 = -1.0 mAdc) MMBT3904WT1 MMBT3906WT1 tr - - 35 35 Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) (VCC = -3.0 Vdc, IC = -10 mAdc) MMBT3904WT1 MMBT3906WT1 ts - - 200 225 Fall Time (IB1 = IB2 = 1.0 mAdc) (IB1 = IB2 = -1.0 mAdc) MMBT3904WT1 MMBT3906WT1 tf - - 50 75 ns MMBT3904WT1 DUTY CYCLE = 2% 300 ns +3 V +10.9 V 10 < t1 < 500 s 275 t1 DUTY CYCLE = 2% 10 k +3 V +10.9 V 275 10 k 0 -0.5 V CS < 4 pF* < 1 ns 1N916 -9.1 V CS < 4 pF* < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit http://onsemi.com 3 MMBT3904WT1, NPN MMBT3906WT1, PNP MMBT3904WT1 TYPICAL TRANSIENT CHARACTERISTICS TJ = 25C TJ = 125C 500 500 IC/IB = 10 tr @ VCC = 3.0 V 30 20 40 V 15 V MMBT3904WT1 2.0 3.0 5.0 7.0 10 20 30 50 70 100 t s , STORAGE TIME (ns) IC/IB = 20 200 2.0 3.0 5.0 7.0 10 20 30 50 70 100 Figure 4. Rise Time IC/IB = 10 30 50 70 100 IC/IB = 20 100 70 50 200 IC/IB = 10 30 20 10 7 5 MMBT3904WT1 20 VCC = 40 V IB1 = IB2 300 200 IC/IB = 10 5.0 7.0 10 200 500 ts = ts - 1/8 tf IB1 = IB2 30 20 2.0 3.0 1.0 IC, COLLECTOR CURRENT (mA) IC/IB = 20 1.0 MMBT3904WT1 IC, COLLECTOR CURRENT (mA) 100 70 50 10 7 5 30 20 Figure 3. Turn -On Time 500 300 200 100 70 50 10 7 5 2.0 V td @ VOB = 0 V 1.0 t r, RISE TIME (ns) 200 100 70 50 10 7 5 VCC = 40 V IC/IB = 10 300 t f , FALL TIME (ns) TIME (ns) 300 200 MMBT3904WT1 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Storage Time Figure 6. Fall Time http://onsemi.com 4 200 MMBT3904WT1, NPN MMBT3906WT1, PNP MMBT3904WT1 TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) 12 14 SOURCE RESISTANCE = 200 IC = 1.0 mA SOURCE RESISTANCE = 200 IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1.0 k IC = 50 A 4 2 SOURCE RESISTANCE = 500 IC = 100 A 0 0.1 0.2 0.4 1.0 2.0 f = 1.0 kHz 12 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 IC = 1.0 mA IC = 0.5 mA 10 IC = 50 A 8 IC = 100 A 6 4 2 MMBT3904WT1 4.0 10 20 40 MMBT3904WT1 0 0.1 100 0.2 0.4 1.0 2.0 4.0 10 20 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS) Figure 7. Noise Figure Figure 8. Noise Figure 40 100 h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25C) 300 hoe, OUTPUT ADMITTANCE ( mhos) 100 MMBT3904WT1 h fe , CURRENT GAIN 200 100 70 50 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 MMBT3904WT1 50 20 10 5 2 1 10 0.1 0.2 h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) h ie , INPUT IMPEDANCE (k OHMS) 20 MMBT3904WT1 5.0 2.0 1.0 0.5 0.2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 5.0 10 Figure 10. Output Admittance Figure 9. Current Gain 10 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 7.0 3.0 2.0 1.0 0.7 0.5 10 MMBT3904WT1 5.0 0.1 Figure 11. Input Impedance 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 12. Voltage Feedback Ratio http://onsemi.com 5 MMBT3904WT1, NPN MMBT3906WT1, PNP MMBT3904WT1 h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125C VCE = 1.0 V MMBT3904WT1 +25C 1.0 0.7 -55 C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 13. DC Current Gain 1.0 TJ = 25C MMBT3904WT1 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 14. Collector Saturation Region 1.0 1.2 TJ = 25C MMBT3904WT1 MMBT3904WT1 VBE(sat) @ IC/IB =10 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 VC FOR VCE(sat) 0 -55 C TO +25C -0.5 -55 C TO +25C -1.0 +25C TO +125C VB FOR VBE(sat) -1.5 0.2 0 +25C TO +125C 0.5 COEFFICIENT (mV/ C) V, VOLTAGE (VOLTS) 1.0 1.0 2.0 5.0 10 20 50 100 -2.0 200 0 20 40 60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 15. "ON" Voltages Figure 16. Temperature Coefficients http://onsemi.com 6 180 200 MMBT3904WT1, NPN MMBT3906WT1, PNP MMBT3904WT1 TJ = 25C TJ = 125C 10 MMBT3904WT1 CAPACITANCE (pF) 7.0 5.0 Cibo 3.0 Cobo 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS VOLTAGE (VOLTS) Figure 17. Capacitance http://onsemi.com 7 20 30 40 MMBT3904WT1, NPN MMBT3906WT1, PNP MMBT3906WT1 3V 3V < 1 ns +9.1 V 275 < 1 ns 275 10 k 10 k 0 CS < 4 pF* +10.6 V 300 ns 10 < t1 < 500 s DUTY CYCLE = 2% CS < 4 pF* 1N916 DUTY CYCLE = 2% t1 10.9 V * Total shunt capacitance of test jig and connectors Figure 18. Delay and Rise Time Equivalent Test Circuit Figure 19. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ = 25C TJ = 125C 500 500 300 200 IC/IB = 10 MMBT3906WT1 MMBT3906WT1 300 200 VCC = 40 V IB1 = IB2 t f , FALL TIME (ns) IC/IB = 20 TIME (ns) 100 70 50 tr @ VCC = 3.0 V 15 V 30 20 10 7 5 40 V 2.0 V 2.0 3.0 5.0 7.0 10 20 30 50 70 100 70 50 200 IC/IB = 10 30 20 10 7 5 td @ VOB = 0 V 1.0 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 20. Turn -On Time Figure 21. Fall Time MMBT3906WT1 TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = -5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) NF, NOISE FIGURE (dB) 4.0 12 SOURCE RESISTANCE = 200 IC = 1.0 mA f = 1.0 kHz SOURCE RESISTANCE = 200 IC = 0.5 mA 3.0 SOURCE RESISTANCE = 2.0 k IC = 50 A 2.0 1.0 0 0.1 SOURCE RESISTANCE = 2.0 k IC = 100 A 0.2 0.4 1.0 2.0 4.0 10 f, FREQUENCY (kHz) IC = 1.0 mA 10 NF, NOISE FIGURE (dB) 5.0 IC = 0.5 mA 8.0 6.0 4.0 IC = 50 A 2.0 IC = 100 A MMBT3906WT1 20 40 MMBT3906WT1 0 0.1 100 Figure 22. 0.2 0.4 1.0 2.0 4.0 10 20 RS, SOURCE RESISTANCE (k) Figure 23. http://onsemi.com 8 40 100 MMBT3904WT1, NPN MMBT3906WT1, PNP MMBT3906WT1 h PARAMETERS (VCE = -10 Vdc, f = 1.0 kHz, TA = 25C) 100 hoe, OUTPUT ADMITTANCE ( mhos) 300 MMBT3906WT1 hfe , CURRENT GAIN 200 100 70 50 30 0.1 0.2 0.5 0.7 1.0 2.0 3.0 0.3 IC, COLLECTOR CURRENT (mA) 70 MMBT3906WT1 50 30 20 10 7.0 5.0 5.0 7.0 10 0.1 0.2 Figure 24. Current Gain 10 10 h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) MMBT3906WT1 10 h ie , INPUT IMPEDANCE (k ) 5.0 7.0 Figure 25. Output Admittance 20 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.5 0.7 1.0 2.0 3.0 0.3 IC, COLLECTOR CURRENT (mA) 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 MMBT3906WT1 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 Figure 26. Input Impedance 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 Figure 27. Voltage Feedback Ratio http://onsemi.com 9 10 MMBT3904WT1, NPN MMBT3906WT1, PNP MMBT3906WT1 STATIC CHARACTERISTICS h FE, DC CURRENT GAIN (NORMALIZED) 2.0 TJ = +125C VCE = 1.0 V +25C 1.0 0.7 -55 C 0.5 0.3 MMBT3906WT1 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 70 100 200 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 28. DC Current Gain 1.0 TJ = 25C MMBT3906WT1 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 1.0 VBE(sat) @ IC/IB = 10 TJ = 25C 0.8 V, VOLTAGE (VOLTS) V, TEMPERATURE COEFFICIENTS (mV/C) Figure 29. Collector Saturation Region VBE @ VCE = 1.0 V 0.6 MMBT3906WT1 0.4 0.2 0 VCE(sat) @ IC/IB = 10 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 1.0 0.5 +25C TO +125C -55 C TO +25C 0 -0.5 MMBT3906WT1 +25C TO +125C -1.0 VS FOR VBE(sat) -55 C TO +25C -1.5 -2.0 200 VC FOR VCE(sat) 0 Figure 30. "ON" Voltages 20 40 60 80 100 120 140 IC, COLLECTOR CURRENT (mA) 160 Figure 31. Temperature Coefficients http://onsemi.com 10 180 200 MMBT3904WT1, NPN MMBT3906WT1, PNP MMBT3906WT1 TJ = 25C TJ = 125C 10 MMBT3906WT1 CAPACITANCE (pF) 7.0 5.0 Cobo Cibo 3.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS VOLTAGE (VOLTS) Figure 32. Capacitance http://onsemi.com 11 20 30 40 MMBT3904WT1, NPN MMBT3906WT1, PNP PACKAGE DIMENSIONS SC-70/SOT-323 CASE 419-04 ISSUE L A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 B S 1 2 D G 0.05 (0.002) J N C INCHES MIN MAX 0.071 0.087 0.045 0.053 0.032 0.040 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.079 0.095 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.00 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 2.00 2.40 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR K H DIM A B C D G H J K L N S SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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