Semiconductor Components Industries, LLC, 2004
March, 2004 − Rev. 4 1Publication Order Number:
MMBT3904WT1/D
MMBT3904WT1, NPN
MMBT3906WT1, PNP
General Purpose
Transistors
NPN and PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−323/SC−70 package which
is designed for low power surface mount applications.
•Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
MMBT3904WT1
MMBT3906WT1
VCEO 40
−40
Vdc
Collector−Base Voltage
MMBT3904WT1
MMBT3906WT1
VCBO 60
−40
Vdc
Emitter−Base Voltage
MMBT3904WT1
MMBT3906WT1
VEBO 6.0
−5.0
Vdc
Collector Current − Continuous
MMBT3904WT1
MMBT3906WT1
IC200
−200
mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation (Note 1)
TA = 25°CPD150 mW
Thermal Resistance,
Junction to Ambient RJA 833 °C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
Device Package Shipping†
ORDERING INFORMATION
MMBT3904WT1 SC−70
SC−70/SOT−323
CASE 419
STYLE 3
3000/Tape & Reel
2
3
1
MARKING DIAGRAM
AM M
AM = Specific Device Code
2A = Specific Device Code
M = Date Code
COLLECTOR
3
1
BASE
2
EMITTER
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MMBT3906WT1 SC−70 3000/Tape & Reel
2A M
MMBT3904WT1 MMBT3906WT1
MMBT3904WT1G SC−70 3000/Tape & Reel
MMBT3906WT1G SC−70 3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MMBT3904WT1, NPN MMBT3906WT1, PNP
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 2)
(IC = 1.0 mAdc, IB = 0) MMBT3904WT1
(IC = −1.0 mAdc, IB = 0) MMBT3906WT1
V(BR)CEO 40
−40 −
−
Vdc
Collector−Base Breakdown Voltage
(IC = 10 Adc, IE = 0) MMBT3904WT1
(IC = −10 Adc, IE = 0) MMBT3906WT1
V(BR)CBO 60
−40 −
−
Vdc
Emitter−Base Breakdown Voltage
(IE = 10 Adc, IC = 0) MMBT3904WT1
(IE = −10 Adc, IC = 0) MMBT3906WT1
V(BR)EBO 6.0
−5.0 −
−
Vdc
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc) MMBT3904WT1
(VCE = −30 Vdc, VEB = −3.0 Vdc) MMBT3906WT1
IBL −
−50
−50
nAdc
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc) MMBT3904WT1
(VCE = −30 Vdc, VEB = −3.0 Vdc) MMBT3906WT1
ICEX −
−50
−50
nAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc) MMBT3904WT1
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = −0.1 mAdc, VCE = −1.0 Vdc) MMBT3906WT1
(IC = −1.0 mAdc, VCE = −1.0 Vdc)
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −50 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
hFE 40
70
100
60
30
60
80
100
60
30
−
−
300
−
−
−
−
300
−
−
−
Collector−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc) MMBT3904WT1
(IC = 50 mAdc, IB = 5.0 mAdc)
(IC = −10 mAdc, IB = −1.0 mAdc) MMBT3906WT1
(IC = −50 mAdc, IB = −5.0 mAdc)
VCE(sat) −
−
−
−
0.2
0.3
−0.25
−0.4
Vdc
Base−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc) MMBT3904WT1
(IC = 50 mAdc, IB = 5.0 mAdc)
(IC = −10 mAdc, IB = −1.0 mAdc) MMBT3906WT1
(IC = −50 mAdc, IB = −5.0 mAdc)
VBE(sat) 0.65
−
−0.65
−
0.85
0.95
−0.85
−0.95
Vdc
2. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%.
MMBT3904WT1, NPN MMBT3906WT1, PNP
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) MMBT3904WT1
(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) MMBT3906WT1
fT300
250 −
−
MHz
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) MMBT3904WT1
(VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz) MMBT3906WT1
Cobo −
−4.0
4.5
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) MMBT3904WT1
(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) MMBT3906WT1
Cibo −
−8.0
10.0
pF
Input Impedance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) MMBT3906WT1
hie 1.0
2.0 10
12
k Ω
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) MMBT3906WT1
hre 0.5
0.1 8.0
10
X 10−4
Small−Signal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) MMBT3906WT1
hfe 100
100 400
400
−
Output Admittance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) MMBT3906WT1
hoe 1.0
3.0 40
60
mhos
Noise Figure
(VCE = 5.0 Vdc, IC = 100 Adc, RS = 1.0 k Ω, f = 1.0 kHz) MMBT3904WT1
(VCE = −5.0 Vdc, IC = −100 Adc, RS = 1.0 k Ω, f = 1.0 kHz) MMBT3906WT1
NF −
−5.0
4.0
dB
SWITCHING CHARACTERISTICS
Characteristic Condition Symbol Min Max Unit
Delay Time (VCC = 3.0 Vdc, VBE = −0.5 Vdc) MMBT3904WT1
(VCC = −3.0 Vdc, VBE = 0.5 Vdc) MMBT3906WT1 td−
−35
35 ns
Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) MMBT3904WT1
(IC = −10 mAdc, IB1 = −1.0 mAdc) MMBT3906WT1 tr−
−35
35
Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) MMBT3904WT1
(VCC = −3.0 Vdc, IC = −10 mAdc) MMBT3906WT1 ts−
−200
225 ns
Fall Time (IB1 = IB2 = 1.0 mAdc) MMBT3904WT1
(IB1 = IB2 = −1.0 mAdc) MMBT3906WT1 tf−
−50
75
MMBT3904WT1
Figure 1. Delay and Rise Time
Equivalent Test Circuit Figure 2. Storage and Fall Time
Equivalent Test Circuit
+3 V
275
10 k
1N916 CS < 4 pF*
+3 V
275
10 k
CS < 4 pF*
< 1 ns
−0.5 V
+10.9 V
300 ns
DUTY CYCLE = 2%
< 1 ns
−9.1 V
+10.9 V
DUTY CYCLE = 2%
t1
0
10 < t1 < 500 s
* Total shunt capacitance of test jig and connectors
MMBT3904WT1, NPN MMBT3906WT1, PNP
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MMBT3904WT1
TYPICAL TRANSIENT CHARACTERISTICS
Figure 3. Turn−On Time
IC, COLLECTOR CURRENT (mA)
70
100
200
300
500
50
Figure 4. Rise Time
IC, COLLECTOR CURRENT (mA)
TIME (ns)
1.0 2.0 3.0 10 20 70
5100
t , RISE TIME (ns)
Figure 5. Storage Time
IC, COLLECTOR CURRENT (mA)
Figure 6. Fall Time
IC, COLLECTOR CURRENT (mA)
5.0 7.0 30 50 200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20 70
5100
5.0 7.0 30 50 200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20 70
5100
5.0 7.0 30 50 200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20 70
5100
5.0 7.0 30 50 200
10
30
7
20
r
t , FALL TIME (ns)
f
t , STORAGE TIME (ns)
s
′
VCC = 40 V
IC/IB = 10
VCC = 40 V
IB1 = IB2
IC/IB = 20
IC/IB = 10
IC/IB = 10
tr @ VCC = 3.0 V
td @ VOB = 0 V
40 V
15 V
2.0 V
IC/IB = 10
IC/IB = 20
IC/IB = 10
IC/IB = 20
t′s = ts − 1/8 tf
IB1 = IB2
MMBT3904WT1 MMBT3904WT1
MMBT3904WT1 MMBT3904WT1
TJ = 25°C
TJ = 125°C
MMBT3904WT1, NPN MMBT3906WT1, PNP
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MMBT3904WT1
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
Figure 7. Noise Figure
f, FREQUENCY (kHz)
4
6
8
10
12
2
0.1
Figure 8. Noise Figure
RS, SOURCE RESISTANCE (k OHMS)
0
NF, NOISE FIGURE (dB)
1.0 2.0 4.0 10 20 40
0.2 0.4
0100
4
6
8
10
12
2
14
0.1 1.0 2.0 4.0 10 20 40
0.2 0.4 100
NF, NOISE FIGURE (dB)
f = 1.0 kHz IC = 1.0 mA
IC = 0.5 mA
IC = 50 A
IC = 100 A
SOURCE RESISTANCE = 200
IC = 1.0 mA
SOURCE RESISTANCE = 200
IC = 0.5 mA
SOURCE RESISTANCE = 500
IC = 100 A
SOURCE RESISTANCE = 1.0 k
IC = 50 A
MMBT3904WT1 MMBT3904WT1
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
Figure 9. Current Gain
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 10. Output Admittance
IC, COLLECTOR CURRENT (mA)
h , CURRENT GAIN
h , OUTPUT ADMITTANCE ( mhos)
Figure 11. Input Impedance
IC, COLLECTOR CURRENT (mA)
Figure 12. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mA)
30
100
50
5
10
20
2.0
3.0
5.0
7.0
10
1.0
0.1 0.2 1.0 2.0 5.0
0.5
10
0.3 0.5 3.0
0.7
2.0
5.0
10
20
1.0
0.2
0.5
oe
h , VOLTAGE FEEDBACK RATIO (X 10 )
re
h , INPUT IMPEDANCE (k OHMS)
ie
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0
2
1
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0
fe
−4
MMBT3904WT1 MMBT3904WT1
MMBT3904WT1 MMBT3904WT1
MMBT3904WT1, NPN MMBT3906WT1, PNP
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MMBT3904WT1
TYPICAL STATIC CHARACTERISTICS
Figure 13. DC Current Gain
IC, COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
2.0
0.2
0.1
h , DC CURRENT GAIN (NORMALIZED)
0.5 2.0 3.0 10 50 70
0.2 0.3
0.1 100
1.00.7 200
30205.0 7.0
FE
VCE = 1.0 V
TJ = +125°C
+25°C
−55 °C
MMBT3904WT1
Figure 14. Collector Saturation Region
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECTOR EMITTER VOLTAGE (VOLTS)
0.5 2.0 3.0 100.2 0.3
01.00.7 5.0 7.0
CE
IC = 1.0 mA
TJ = 25°C
0.070.050.030.020.01
10 mA 30 mA 100 mA
MMBT3904WT1
Figure 15. “ON” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
1.2
0.2
Figure 16. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20 50
0100
−0.5
0
0.5
1.0
0 60 80 120 140 160 180
20 40 100
COEFFICIENT (mV/ C)
200
−1.0
−1.5
−2.0
200
°
TJ = 25°C
VBE(sat) @ IC/IB =10
VCE(sat) @ IC/IB =10
VBE @ VCE =1.0 V
+25°C TO +125°C
−55 °C TO +25°C
+25°C TO +125°C
−55 °C TO +25°C
VC FOR VCE(sat)
VB FOR VBE(sat)
MMBT3904WT1 MMBT3904WT1
MMBT3904WT1, NPN MMBT3906WT1, PNP
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MMBT3904WT1
Figure 17. Capacitance
REVERSE BIAS VOLTAGE (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20 30 40
0.2 0.3 0.5 0.7
Cibo
Cobo
TJ = 25°C
TJ = 125°C
MMBT3904WT1
MMBT3904WT1, NPN MMBT3906WT1, PNP
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MMBT3906WT1
Figure 18. Delay and Rise Time
Equivalent Test Circuit Figure 19. Storage and Fall Time
Equivalent Test Circuit
3 V
275
10 k
1N916 CS < 4 pF*
3 V
275
10 k
CS < 4 pF*
< 1 ns
+10.6 V 300 ns
DUTY CYCLE = 2%
< 1 ns
+9.1 V
10.9 V
DUTY CYCLE = 2%
t1
0
10 < t1 < 500 s
* Total shunt capacitance of test jig and connectors
TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C
TJ = 125°C
Figure 20. Turn−On Time
IC, COLLECTOR CURRENT (mA)
70
100
200
300
500
50
TIME (ns)
1.0 2.0 3.0 10 20 70
5100
5.0 7.0 30 50 200
10
30
7
20
IC/IB = 10
tr @ VCC = 3.0 V
td @ VOB = 0 V
40 V
15 V
2.0 V
MMBT3906WT1
Figure 21. Fall Time
IC, COLLECTOR CURRENT (mA)
70
100
200
300
500
50
1.0 2.0 3.0 10 20 70
5100
5.0 7.0 30 50 200
10
30
7
20
t , FALL TIME (ns)
f
VCC = 40 V
IB1 = IB2
IC/IB = 20
IC/IB = 10
MMBT3906WT1
MMBT3906WT1
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = −5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
f = 1.0 kHz IC = 1.0 mA
IC = 0.5 mA
IC = 50 A
IC = 100 A
SOURCE RESISTANCE = 200
IC = 1.0 mA
SOURCE RESISTANCE = 200
IC = 0.5 mA
SOURCE RESISTANCE = 2.0 k
IC = 100 A
SOURCE RESISTANCE = 2.0 k
IC = 50 A
Figure 22.
f, FREQUENCY (kHz)
1.0
2.0
3.0
4.0
5.0
0.1
Figure 23.
RS, SOURCE RESISTANCE (kΩ)
0
NF, NOISE FIGURE (dB)
1.0 2.0 4.0 10 20 40
0.2 0.4
0
100
4.0
6.0
8.0
10
2.0
12
0.1 1.0 2.0 4.0 10 20 40
0.2 0.4 100
NF, NOISE FIGURE (dB)
MMBT3906WT1 MMBT3906WT1
MMBT3904WT1, NPN MMBT3906WT1, PNP
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MMBT3906WT1
h PARAMETERS
hfe, CURRENT GAIN
Figure 24. Current Gain
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 25. Output Admittance
IC, COLLECTOR CURRENT (mA)
h , OUTPUT ADMITTANCE ( mhos)
Figure 26. Input Impedance
IC, COLLECTOR CURRENT (mA)
Figure 27. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mA)
30
100
70
10
30
2.0
3.0
5.0
7.0
10
1.0
0.1 0.2 1.0 2.0 5.0
0.5
10
0.5
0.7
2.0
5.0
10
20
1.0
0.2
0.5
oe
h , VOLTAGE FEEDBACK RATIO (X 10 )
re
h , INPUT IMPEDANCE (k
ie
0.1 0.2 1.0 2.0 5.0 10
0.5
0.1 0.2 1.0 2.0 5.0 10
0.5
7.0
5.0
0.1 0.2 1.0 2.0 5.0 10
0.5
−4
(VCE = −10 Vdc, f = 1.0 kHz, TA = 25°C)
50
20
Ω)
MMBT3906WT1 MMBT3906WT1
MMBT3906WT1 MMBT3906WT1
0.3 0.7 3.0 7.0 0.3 0.7 3.0 7.0
0.3
0.7
3.0
7.0
0.3 0.7 3.0 7.0 0.3 0.7 3.0 7.0
MMBT3904WT1, NPN MMBT3906WT1, PNP
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MMBT3906WT1
STATIC CHARACTERISTICS
Figure 28. DC Current Gain
IC, COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
2.0
0.2
0.1
h , DC CURRENT GAIN (NORMALIZED)
0.5 2.0 3.0 10 50 70
0.2 0.3
0.1
100
1.00.7 200
30205.0 7.0
FE
VCE = 1.0 V
TJ = +125°C
+25°C
−55 °C
MMBT3906WT1
Figure 29. Collector Saturation Region
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECTOR EMITTER VOLTAGE (VOLTS)
0.5 2.0 3.0 100.2 0.3
01.00.7 5.0 7.0
CE
IC = 1.0 mA
TJ = 25°C
0.070.050.030.020.01
10 mA 30 mA 100 mA
MMBT3906WT1
Figure 30. “ON” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
Figure 31. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20 50
0
100
−0.5
0
0.5
1.0
0 60 80 120 140 160 180
20 40 100 200
−1.0
−1.5
−2.0
200
TJ = 25°CVBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V +25°C TO +125°C
−55 °C TO +25°C
+25°C TO +125°C
−55 °C TO +25°C
VC FOR VCE(sat)
VS FOR VBE(sat)
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
MMBT3906WT1 MMBT3906WT1
MMBT3904WT1, NPN MMBT3906WT1, PNP
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MMBT3906WT1
Cibo
Cobo
Figure 32. Capacitance
REVERSE BIAS VOLTAGE (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20 30 40
0.2 0.3 0.5 0.7
TJ = 25°C
TJ = 125°C
MMBT3906WT1
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PACKAGE DIMENSIONS
CN
AL
D
G
SB
H
J
K
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.071 0.087 1.80 2.20
B0.045 0.053 1.15 1.35
C0.032 0.040 0.80 1.00
D0.012 0.016 0.30 0.40
G0.047 0.055 1.20 1.40
H0.000 0.004 0.00 0.10
J0.004 0.010 0.10 0.25
K0.017 REF 0.425 REF
L0.026 BSC 0.650 BSC
N0.028 REF 0.700 REF
S0.079 0.095 2.00 2.40
0.05 (0.002) STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SC−70/SOT−323
CASE 419−04
ISSUE L
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028 mm
inches
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
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to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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