MR850 thru MR858 3.0 Amps. Fast Recovery Rectifiers Voltage Range 50 to 800 Volts Forward Current 3.0 Amperes SYNSEMI SEMICONDUCTOR Features @ Low fonward voltage drap @ High current capability @ High reliability @ High surge current capability DO-201AD Mechanical Data | @ Gase: Molded plastic DO-201AD ore 1.0 25.4 @ Epoxy: UL 94-0 rate flame retardant DIA. @ Lead: Axial leads, solderable per MIL-STD-202, Method 208 o guaranteed | @ Polarity: Color band denotes cathode end @ High temperature soldering guaranteed: | eT 250C/10 secands .375 (9.5mm) lead | ~~ r lengths at Slbs., (2.3kq) tension | @ Weight 0.042 ounce, 1.195 grams 1,0 (25.4) MIN. 052 (1.3) 048 (7.2) = DIA. 1 Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Ratings at 26C ambient tarniperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or indudive bad. For capacitive load, derate current by 209% Parameter Symbok MR&50 MR&51 MR&S? MRS54 MR&56 MRS55 Units Maximum repetitive peak reverse voltage Msg 50) 700 200 400 600 gon Volts Masimum RMS voltage V nas 36 FQ 140 280 420 6a0 Volts Masimum OC blecking voltage Vee 50 100 200 4gg 600 Bou Volts Maximum average fonyard rectified current 0.975" 9.5mm} lead length at T,=56C Kay 3.0 Arnos Peak fonvard surge current, 8.3 mes single half sine-wave superimpesed on rated load few 760.0 Amos HEDEG Method) Maximum instantaneous fonvard voltage a 3.0.4 VE 1.26 | 1.3 Volts Maximum DG reverse eurrent @T,=26C 10.0 ax at rated DC blocking voltage BT, =1 00C k 200 Maximum reverse recovery time (Mote 13 t. 400 | 160 no Typical junction capacitance (Nete 24 Cc, 66 pF Operating tarmperature range a -65 to +126 oS Storage temperature range Figs -66 to +150 BES Notes: = 1. Reverse Recovery Test Conditions: |=0.54, .=1.04, |.=0.254 @. Measured at 1 MHz and Applied Reverse Voltage of4.07 D.C.RATINGS AND CHARACTERISTIC CURVES MR850 thru MR858 FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE yO o w a = a 5 3 \ e a a BS 2 a = Single Phase B Half Wave GOHz 3 1 |} Resistive or 4 Inductive Load wi 0.375"(9.5mm)} < Lead Length o L. Oo 25 So Th 100 125 180 178 AMBIENT TEMPERATURE. (C) FIG.3- TYPICAL FORWARD CHARACTERISTICS 20 10 baa a 10 03 4 Tje2sC Pulse Widih=300s- 1% Duty Cyde INSTANTANEOUS FORWARD CURRENT. (A) 03 DA 04 O68 O8 10 12 14 1.6 18 FORWARD VOLTAGE, ('} PEAK FORWARD SURGE CURRENT. (A) JUNCTION CAPACITANCE (pF) FIG.2- MAXIMUM NON-REPETITIVE PEAK SURGE CURRENT T]=25C 8.36 Single Half Sine Wave JEDEC Method NUMBER OF CYCLES AT 60Hz FIG.4- TYPICAL JUNCTION CAPACITANCE & 5 3 THES AS o 1 Z 4 6 10 20 40 660 100 REVERSE VOLTAGE. () FiG.5- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM Son 100 NONINDUCTIVE NONINBUCTIVE Amaie wh we W OUT i+) PULSE = S0Vde GENERATOR (apprex) (NOTE 2) " OSCILLOSCOPE 2 {NOTE 4) (+) $ INDUCTIVE NOTES: 1, Rise Time=?ns max. input Impedanco= = 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedanca= 50 chins 0.254 TOA shes SET TIME BASE FOR 5! 10ne/ em