TAIWAN LITON ELECTRONIC 45E D MM 8835695 0004079 297 MMTLIT aiAare HIGH SPEED SWITCHING DIODES T 03 -09 SILICON EPITAXIAL PLANAR SWITCHING DIODES/SOT-23 PACKAGE CHARACTERISTICS @ Ta 25C OPERATING/STORAGE TEMPERATURE -65C to +175C , havi ; 5 Reverse Max. Power Peak Reverse} Maximurn Reverse |: Maximum Forward | Capacitance mia Device [Marking] Voltage Current @ 25C Voltage Drop VR=Ve2O | Recovery | Dissipation | pip, Time @ Ta=26C + . Type Code | Van C max identity ig @ Ve Ve @ ig Trr max (Note 7) ) (uA) Mv) | ) (mA) (Pf) (nsec) (mw) BAS16 RA6 100 5 75 1.0 10 40 4.0 350 Fig.1 BAV70 RA4 70 5 70 1.0 10 4.0 4.0 350 Fig.2 BAV39 RA7 70 2.5 70 1.0 10 4.0 4.0 350 Fig.3 (1) Device mounted on Ceramic Substrate 10mm x 8mm x .7mm . ja BOTTOM BOTTOM VIEW VIEW Gl GB) Cy FIG. 1 FIG. 2 FIG. 3 500mW/MINI MELF DL-35 OPERATING/STORAGE TEMPERATURE -65C to +175C IPeak Reversel Reverse Current Forward Voltage Capacitance Reverse Power Device voltage max max @ oC max Recovery Time Dissipitation Type | VAM lp VR Ve te (pF) Tr max Pd (Vv) (nA) (V) w (mA) ' (nS) (mw) DL4148 100 5000 75 1.0 10 4.0 4.0 500 DL4151 75 50 50 1.0 50 2.0 2.0 500 DL4154 35 100 25 1.0 30 4.0 2.0 500 DL4448 100 5000 75 1.0 100 4.0 4.0 500 DL4454 75 100 50 1.0 10 2.0 4.0 500