IRLML6246TRPbF
2www.irf.com
D
S
G
Electric Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.03 ––– V/°C
––– 30 46
––– 45 66
VGS(th) Gate Threshold Voltage 0.5 0.8 1.1 V
IDSS ––– ––– 1.0
––– ––– 150
IGSS Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
RGInternal Gate Resistance ––– 4.0 ––– Ω
gfs Forward Transconductance 10 ––– ––– S
QgTotal Gate Charge ––– 3.5 –––
Qgs Gate-to-Source Charge ––– 0.26 –––
Qgd Gate-to-Drain ("Miller") Charge ––– 1.7 –––
td(on) Turn-On Delay Time ––– 3.6 –––
trRise Time ––– 4.9 –––
td(off) Turn-Off Delay Time ––– 11 –––
tfFall Time ––– 6.0 –––
Ciss Input Capacitance ––– 290 –––
Coss Output Capacitance ––– 64 –––
Crss Reverse Transfer Capacitance ––– 41 –––
Source - Drain Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units
ISContinuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
c
VSD Diode Forward Voltage ––– ––– 1.2 V
trr Reverse Recovery Time ––– 8.6 13 ns
Qrr Reverse Recovery Charge ––– 2.8 4.2 nC
––– –––
––– –––
pF
A
1.3
16
VDD =10V
d
nA
nC
ns
VDS = VGS, ID = 5μA
VDS =16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
RDS(on) VGS = 2.5V, ID = 3.3A
d
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current μA
mΩ
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 4.5V, ID = 4.1A
d
MOSFET symbol
showing the
VDS =10V
Conditions
VGS = 4.5V
VGS = 0V
VDS = 16V
ƒ = 1.0MHz
RG = 6.8Ω
VGS = 4.5V
d
di/dt = 100A/μs
d
VGS = 12V
VGS = -12V
TJ = 25°C, IS = 4.1A, VGS = 0V
d
integral reverse
p-n junction diode.
VDS = 10V, ID = 4.1A
ID = 4.1A
ID = 1.0A
TJ = 25°C, VR = 15V, IF=1.3A