AP18P10GS RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge D Simple Drive Requirement Fast Switching Characteristic BVDSS -100V RDS(ON) 160m ID G -12A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. GD S TO-263(S) The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage 20 V ID@TC=25 Continuous Drain Current, VGS @ 10V -12 A ID@TC=100 Continuous Drain Current, VGS @ 10V -10 A 1 IDM Pulsed Drain Current -48 A PD@TC=25 Total Power Dissipation 35.7 W 0.29 W/ Linear Derating Factor 2 EAS Single Pulse Avalanche Energy 40 mJ IAR Avalanche Current -9 A TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Units 3.5 /W 62 /W 201018072-1/4 AP18P10GS Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-1mA -100 - - V RDS(ON) Static Drain-Source On-Resistance3 VGS=-10V, ID=-8A - - 160 m VGS=-4.5V, ID=-6A - - 200 m Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS= -10V, ID= -8A - 8 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-100V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=150oC) VDS=-80V, VGS=0V - - -25 uA Gate-Source Leakage VGS= 20V - - 100 nA ID=-8A - 16 25.6 nC VGS(th) IGSS 3 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-80V - 4.4 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 8.7 - nC VDS=-50V - 9 - ns 3 td(on) Turn-on Delay Time tr Rise Time ID=-8A - 14 - ns td(off) Turn-off Delay Time RG=3.3,VGS=-10V - 45 - ns tf Fall Time RD=6.25 - 40 - ns Ciss Input Capacitance VGS=0V - 1590 2550 pF Coss Output Capacitance VDS=-25V - 110 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 70 - pF Rg Gate Resistance f=1.0MHz - 8 12 Min. Typ. IS=-12A, VGS=0V - - -1.3 V IS=-8A, VGS=0V, - 49 - ns dI/dt=-100A/s - 110 - nC Source-Drain Diode Symbol VSD Parameter 3 Forward On Voltage 3 trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Max. Units Notes: 1.Pulse width limited by Max. junction temperature. 2.Starting Tj=25oC , VDD=-50V , L=1.0mH , RG=25. 3.Pulse test THIS PRODUCT IS ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR USE IN CONSUMER APPLICATIONS. APPLICATIONS OR USE IN LIFE SUPPORT OR OTHER SIMILAR MISSION-CRITICAL DEVICES OR SYSTEMS ARE NOT AUTHORIZED. 2/4 AP18P10GS 20 40 -10V -7.0V -5.0V -4.5V o T C = 25 C 15 -ID , Drain Current (A) -ID , Drain Current (A) 30 -10V -7.0V -5.0V -4.5V T C =150 o C 20 10 10 V G = -3.0V 5 V G = -3.0 V 0 0 0 4 8 12 16 0 20 2 4 6 8 10 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 300 2.0 I D = -8 A T C =25 270 I D = - 12 A V G = -10V 1.6 Normalized RDS(ON) RDS(ON) (m ) 240 210 180 1.2 0.8 150 0.4 120 4 6 8 10 -50 0 50 100 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 8 2.0 6 1.5 T j =150 o C 4 Normalized -VGS(th) (V) -IS(A) 2 T j =25 o C 2 150 1.0 0.5 0.0 0 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP18P10GS f=1.0MHz 10000 12 C iss V DS = - 80 V ID= -8A 1000 9 C (pF) -VGS , Gate to Source Voltage (V) 15 6 C oss C rss 100 3 10 0 0 10 20 30 1 40 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 10 Normalized Thermal Response (Rthjc) 1 -ID (A) 100us 1ms 1 10ms 100ms DC o T C =25 C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0 0.1 1 10 100 1000 0.00001 0.0001 -V DS , Drain-to-Source Voltage (V) 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 15 V DS = -5V T j =25 o C -ID , Drain Current (A) 12.5 VG T j =150 o C QG 10 -4.5V QGS 7.5 QGD 5 2.5 Charge Q 0 0 2 4 6 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4/4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-263 E SYMBOLS MIN NOM MAX A 4.25 4.75 5.20 A1 0.00 0.15 0.30 A2 2.20 2.45 2.70 b 0.70 0.90 1.10 b1 1.07 1.27 1.47 c 0.30 0.45 0.60 D c1 1.15 1.30 1.45 D 8.30 8.90 9.40 E 9.70 10.10 10.50 e 2.04 2.54 3.04 L2 ----- 1.50 ----- L3 4.50 4.90 5.30 L4 ----- 1.50 ---- b1 L2 L3 b e L4 Millimeters A A2 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. c c1 A1 Part Marking Information & Packing : TO-263 Part Number Package Code XXXXXS 18P10GS meet Rohs requirement YWWSSS LOGO Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence