[ Ordering number: EN 17204 2SA1415/28C3645 PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, Predriver Applications Features . Adoption of FBET process - High breakdown voltage (Vogo= 160V) . Excellent linearity of hpg and small cyp - Fast switching speed - Very small size marking it easy to provide high-density, small-sized hybrid ]Cs ( ):2SA1415 Absolute Maximum Ratings at Ta= 25C unit Collector to Base Voltage Vcso ()180 Vv Collector to Emitter Voltage Vero ()160 - V Emitter to Base Voltage VEBO {)5 Vv Collector Current Ic (-}140 mA Collector Current(Pulse) Icp (}200 mA Collector Dissipation Pel) 500 mW Pc(2) Mounted on ceramic board (250mm2x0.8mm) 1.3 W Junction Temperature Tj 160 C Storage Temperature Tstg 65te+150 C Electrical Characteristics at Ta=25C min typ max unit Collector Cutoff Current Ecso Vop=(-)80V Ing=9 (-)100 nA Emitter Cutoff Current lEBO Vep=(-)4V,Ic=0 (-)100 nA DC Current Gain hpr Vee =()5V,I=()10mA 100% 400% Gain-Bandwidth Product fp Vog=()10V Ic=()10mA 150 MHz Output Capacitance Cob Vcep=()10V,f=1MHz (4.0) pF 3.0 C-E Saturation Voltage Vorsat) Ic=()}50mA,Ip=()5mA (0.14) (-0.4) Vv 0.07 0.3 Turn-on Time ton See specified Test Circuit. 0.1 ps Storage Time tstg 4 1.5 ys Fall Time te * 0.1 HS *: The 25A1415/25C3645 are classified by 10mA hpr as follows : 100 R 200 | 140 5s 280 | 200 T 400 | Marking 2SA1415: AA. sh ik: R,S,T . arene 2803645: CA FE ran 8,1 Package Dimensions 2038 | funit:mm) . Switching Time Test Circuit 4.5 1s 'B1 out a nf 0.4 | o + Ta it | 1 a 30 ak Ig= 01g) = 10Ip2= |onA (For PNP, the polarity is reversed.) Unit (Resistance : Q, Capacitance : F) E: Emitter C: Collector B: Base SANYO: PCP (Bottom View) SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bidg., 1-10,1 Chome, Ueno, Taito-ku, TOKYO, sLOROE Uy - 3277K/2145MW,TS No.1720-1/4 28A1415/25C3645 Ic - VCE 140 ' 2SA1415 4 ~120 oe ; ah i 1-100 (| oa 04 F oO Le _ = | anh 5 ~8 | 0: oe -60 0.2m AL . aa 8 of pe 5 0o. oh Ig=o 0 ~~. 0 -40 -50 - - Collector to Emitter Voltage, Vcp V Ic - 140 C BE PSAi als < -120 | -%00 - 2 q 8 a 2 | 3-60 :=T 3 2-40 3 | Y -20 Of TOE 88 Base to Emitter Voltage,Vpp V Are - Ic 28A1415 DC Current Gain,hrp 8 Vop= 5V 1 -10 10 ~100 Collector Current, mA ft - I - OSAP ats Leeann ~~ a \ 8 . ~ Py * Gain-Bandwidth Product,fp MHz Ww Yor= = 1OV ent lO 2 42: 5 3 a0 2 ~ Golisetor Current, mA ay o 1 z o DC Current Gain,hpp Collector Current,l> mA Gain-Bandwidth Product,fp MHz E 8 &0 Collector Current,[ mA 20 8 Ic - VCE Ns 2803645 o bok Q. ama, 0. 2mA Q.1mA ip=0 wg 0 #0 7 Collector to Emitter Voltage,Vog V Ic - VSE 2803645 ; o | 20 | 6 o2 04 06 04 Lo Base to Emitter Voltage, Va_ V hee - Ic 2803645 Noo On 5 1.0 10 100 Collector Current,l_ mA fT - I 3 4 2803645 2 Le nm | 7 \ 100 a 4 \ 7 4 2 Vog= 10V 10 2 3 5 Ti 2 38 5 ? 2 Collector Current Ig mA_ No.1720-2/4- 25A1415/28C3645 - cob - VcB wo ZBAl 415 f= 1 MHz to oa It ao f 3 8 2 vp a mw ow oO 3 & =) o > 1eo 5 ~=10 100 Collector to Base Voltage,Vcog - V Vce{sat) - Ic 28A1 415 Ic/ Ip=10 > H1.6 Saturation Voltage, Vereay F o Collector to Emitter wo 10 -f00 Collector Currenti mA 1.0 Vpefsat) - Ic 2541415 Ie ins ] 0 ' = o Saturation Veltage,Varicay V ' 5 Base to Emitter -10 -100 Collector CurrentJ mA Ao Po - Ta 28A1415,7 2803645 reo yw an > o Collector Dissipation,Pp W peo oe pin on 2 ey o Ambient Temperature,Ta C Collector to Emitter Base to Emitter Cob - VCB 8 2803645 f= (MHz Tt Output Capacitance,c,, pF s 10 100 Collector to Base Veltage,Vcog V Vee(sat) - Ic 2803645 I/Ig=10 o1 Saturation Voltage, Vertes) V 1.0 100 10 Collector CurrentI mA VBE(sat) - Ic 2803645 Ic Ip=) Saturation Voltage, Vgzicat) V - 10 Collector CurrentIp mA AS 28Al 415, 2803645 4, a, a <a, K% * 100 o 2 &o S Q a Ly e 8a, 5. g 3 0 ko 8 2 8 40 ~~ For PNP, minus sign is omitted, 10 10 Collectorto Emitter Voltage, Vcg V No.1720-3/425A1415/2$C3645 MM No products descrited or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. HM Anyone purchasing any products described or contained herein for an above-mentioned use shall: @ Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD,, tts affiliates, subsidiaries and distnbutors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such clazm or litigation on SANYO ELECTRIC CO. LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. @ Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- -eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property nghts or other rights of third parties. No.1720-4/4