IN4148 - Shanghai Sunrise Electronics

SHANGHAI SUNRISE ELECTRONICS CO., LTD.

FEATURES

• Small glass structure ensures high reliability

• Fast switching

• Low leakage

• High temperature soldering guaranteed:

250oC/10S/9.5mm lead len

at 5 lbs tension

MECHANICAL DATA

• Terminal: Plated axial leads solderable per

MIL-STD 202E, method 208C

• Case: Glass,hermetically sealed

• Polarity: Color band denotes cathode

• Mounting position: Any

MAXIMUM RATINGS AND CHARACTERISTICS

(Ratings at 25oC ambient temperature unless otherwise specified)

SYMBOL VALUE UNITS

Reverse Voltage VR75 V

Peak Reverse Voltage VRM 100 V

Forward Current (average) IO150 mA

Repetitive Forward Peak Current IFRM 300 mA

Forward Voltage (IF=10mA) VF1V

Reverse Current (VR=20V) 25 nA

Reverse Current (VR=75V) 5µA

Reverse Current (VR=20V,TJ=100oC) IR2 50 A

Capacitance (note 1) Ct 4 pF

Reverse Recovery Time (note 2) IF4nS

Thermal Resistance (junction to ambient) (note 3) Rθ(ja) 0.35 oC/mW

Operating Junction and Storage Temperature Range TSTG,TJ-55 +175 oC

Notes:

1: VR=0V, f=1 MHz

2: IF=10mA to IR=1mA, VR=6V, RL=100

3: Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.

http://www.sse-diode.com

IN4148

SILICON EPITAXIAL PLANAR

SWITCHING DIODE

REVERSE VOLTAGE: 75V

FORWARD CURRENT: 150mA

RATINGS

IR1

TECHNICAL

SPECIFICATION

DO - 35

Dimensions in inches and (millimeters)

1.0 (25.4)

MIN.

.018 (0.46)

.022 (0.56)

.120 (3.0)

.200 (5.1)

1.0 (25.4)

MIN. DIA.

.060 (1.5)

.090 (2.3) DIA.