Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RF power transistors designed for applications operating at frequencies from 900 to 1215 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and DME. Typical Pulse Performance: VDD = 50 Vdc, IDQ = 100 mA, Pout = 275 W Peak (27.5 Watts Avg.), f = 1030 MHz, Pulse Width = 128 sec, Duty Cycle = 10% Power Gain -- 20.3 dB Drain Efficiency -- 65.5% Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 275 W Peak Power Typical Broadband Performance: VDD = 50 Vdc, IDQ = 100 mA, Pout = 250 W Peak (25 Watts Avg.), f = 960--1215 MHz, Pulse Width = 128 sec, Duty Cycle = 10% Power Gain -- 19.8 dB Drain Efficiency -- 58% Document Number: MMRF1008H Rev. 1, 5/2016 MMRF1008H MMRF1008HS MMRF1008GH 960--1215 MHz, 275 W, 50 V PULSE LATERAL N--CHANNEL RF POWER MOSFETs NI--780H--2L MMRF1008H Features Characterized with Series Equivalent Large--Signal Impedance Parameters Internally Matched for Ease of Use Qualified up to a Maximum of 50 VDD Operation Integrated ESD Protection Greater Negative Gate--Source Voltage Range for Improved Class C Operation NI--780S--2L MMRF1008HS NI--780GH--2L MMRF1008GH Gate 2 1 Drain (Top View) Note: The backside of the package is the source terminal for the transistor. Figure 1. Pin Connections Freescale Semiconductor, Inc., 2013, 2016. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MMRF1008H MMRF1008HS MMRF1008GH 1 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS --0.5, +100 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Storage Temperature Range Tstg -- 65 to +150 C TC 150 C TJ 225 C Symbol Value (2) Unit ZJC 0.08 C/W Case Operating Temperature Operating Junction Temperature (1) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 275 W Peak 128 sec Pulse Width, 10% Duty Cycle, 50 Vdc, IDQ = 100 mA, 1030 MHz Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2, passes 2600 V Machine Model (per EIA/JESD22--A115) B, passes 200 V Charge Device Model (per JESD22--C101) IV, passes 2000 V Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit IGSS -- -- 10 Adc 110 -- -- Vdc Off Characteristics Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 mA) V(BR)DSS Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 90 Vdc, VGS = 0 Vdc) IDSS -- -- 100 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 662 Adc) VGS(th) 0.9 1.7 2.4 Vdc Gate Quiescent Voltage (VDD = 50 Vdc, ID = 100 mAdc, Measured in Functional Test) VGS(Q) 1.7 2.4 3.2 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1.6 Adc) VDS(on) -- 0.25 -- Vdc Reverse Transfer Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 0.46 -- pF Output Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss -- 352 -- pF Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Ciss -- 695 -- pF On Characteristics Dynamic Characteristics (3) 1. Continuous use at maximum temperature will affect MTTF. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955. 3. Part internally matched both on input and output. (continued) MMRF1008H MMRF1008HS MMRF1008GH 2 RF Device Data Freescale Semiconductor, Inc. Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pout = 275 W Peak (27.5 W Avg.), f = 1030 MHz, Pulse, 128 sec Pulse Width, 10% Duty Cycle Power Gain Gps 19 20.3 22 dB Drain Efficiency D 63 65.5 -- % Input Return Loss IRL -- --14 --9 dB Typical Broadband Performance -- 960--1215 MHz (In Freescale 960--1215 MHz Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pout = 250 W Peak (25 W Avg.), f = 960--1215 MHz, Pulse, 128 sec Pulse Width, 10% Duty Cycle Power Gain Gps -- 19.8 -- dB Drain Efficiency D -- 58 -- % Table 5. Ordering Information Device Tape and Reel Information MMRF1008HR5 MMRF1008HSR5 MMRF1008GHR5 Package NI--780H--2L R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel NI--780S--2L NI--780GH--2L 1. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GH) parts. MMRF1008H MMRF1008HS MMRF1008GH RF Device Data Freescale Semiconductor, Inc. 3 R4 VBIAS R3 C12 C8 C7 VSUPPLY + + C14 C15 C13 C6 Z14 Z11 RF INPUT Z13 Z16 Z17 Z18 Z19 Z20 Z21 Z22 C5 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 DUT C4 R1 C9 Z10 C1 Z15 Z12 R2 C10 C2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11, Z12 Z23 RF OUTPUT C11 C3 1.055 x 0.082 Microstrip 0.100 x 0.082 Microstrip 0.084 x 0.395 Microstrip 0.419 x 0.040 Microstrip 0.498 x 0.466 Microstrip 0.110 x 1.060 Microstrip 0.050 x 1.300 Microstrip 0.092 x 1.300 Microstrip 0.219 x 1.420 Microstrip 0.087 x 1.420 Microstrip 0.187 x 0.050 Microstrip Z13 Z14, Z15 Z16 Z17 Z18 Z19 Z20 Z21 Z22 Z23 PCB 0.190 x 1.250 Microstrip 0.517 x 0.080 Microstrip 0.225 x 1.250 Microstrip 0.860 x 0.975 Microstrip 0.140 x 0.950 Microstrip 0.028 x 0.110 Microstrip 0.397 x 0.040 Microstrip 0.264 x 0.480 Microstrip 0.100 x 0.082 Microstrip 0.521 x 0.082 Microstrip Arlon CuClad 250GX--0300--55--22, 0.030, r = 2.55 Figure 2. MMRF1008H(HS) Test Circuit Schematic Table 6. MMRF1008H(HS) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C4, C5 1.5 pF Chip Capacitors ATC100B1R5BT500XT ATC C2, C7, C11, C13 2.2 F, 100 V Chip Capacitors G2225X7R225KT3AB ATC C3, C6, C10, C12 33 pF Chip Capacitors ATC100B330JT500XT ATC C8 22 F, 25 V Chip Capacitor TPSD226M025R0200 AVX C9 9.1 pF Chip Capacitor ATC100B9R1CT500XT ATC C14, C15 470 F, 63 V Electrolytic Capacitors MCGPA63V477M13X26--RH Multicomp R1, R2, R3, R4 0 , 3.5 A Chip Resistors CRCW12060000Z0EA Vishay MMRF1008H MMRF1008HS MMRF1008GH 4 RF Device Data Freescale Semiconductor, Inc. R4 C8 C7 C13 R3 C14 C15 C6 C5 C12 C9 C4 C3 CUT OUT AREA C1 C10 R2 C11 R1 C2 Figure 3. MMRF1008H(HS) Test Circuit Component Layout MMRF1008H MMRF1008HS MMRF1008GH RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS 160 Coss Ciss 100 MAXIMUM OPERATING Tcase (C) C, CAPACITANCE (pF) 1000 10 1 Crss Measured with 30 mV(rms)ac @ 1 MHz VGS = 0 Vdc 0.1 0 10 20 30 140 120 Pout = 250 W 100 Pout = 275 W 80 Pout = 200 W 60 40 VDD = 50 Vdc, IDQ = 100 mA f = 1030 MHz, Pulse Width = 128 sec 20 0 40 0 50 5 25 30 35 Figure 4. Capacitance versus Drain--Source Voltage Figure 5. Safe Operating Area Gps 20 50 D 40 18 VDD = 50 Vdc, IDQ = 100 mA, f = 1030 MHz Pulse Width = 128 sec, Duty Cycle = 10% 16 50 Pout, OUTPUT POWER (dBm) 60 D, DRAIN EFFICIENCY (%) 22 56 55 54 53 52 51 50 32 34 36 38 40 Pin, INPUT POWER (dBm) PEAK 100 mA 200 mA 21 Gps, POWER GAIN (dB) 20 300 mA 19 100 IDQ = 100 mA, f = 1030 MHz Pulse Width = 128 sec Duty Cycle = 10% 20 19 18 17 16 VDD = 50 Vdc, f = 1030 MHz Pulse Width = 128 sec, Duty Cycle = 10% 50 30 Figure 7. Output Power versus Input Power IDQ = 400 mA 17 VDD = 50 Vdc, IDQ = 100 mA, f = 1030 MHz Pulse Width = 128 sec, Duty Cycle = 10% Pout, OUTPUT POWER (WATTS) PEAK 22 18 Actual Figure 6. Power Gain and Drain Efficiency versus Output Power 22 21 P1dB = 54.76 dBm (299 W) 57 48 28 400 Ideal P3dB = 55.29 dBm (338 W) 49 30 100 40 60 70 59 58 Gps, POWER GAIN (dB) 20 DUTY CYCLE (%) 24 Gps, POWER GAIN (dB) 15 10 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) 400 15 50 VDD = 30 V 35 V 40 V 45 V 50 V 100 400 Pout, OUTPUT POWER (WATTS) PEAK Pout, OUTPUT POWER (WATTS) PEAK Figure 8. Power Gain versus Output Power Figure 9. Power Gain versus Output Power MMRF1008H MMRF1008HS MMRF1008GH 6 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 25_C 55_C 85_C 300 200 100 Gps 22 0 1 2 3 4 5 25_C 20 55_C 60 48 85_C 55_C 36 18 VDD = 50 Vdc, IDQ = 100 mA, f = 1030 MHz Pulse Width = 128 sec, Duty Cycle = 10% D 6 85_C 25_C TC = --30_C VDD = 50 Vdc, IDQ = 100 mA, f = 1030 MHz Pulse Width = 128 sec, Duty Cycle = 10% 0 72 --30_C 16 50 100 Pin, INPUT POWER (WATTS) PEAK D, DRAIN EFFICIENCY (%) 24 TC = --30_C Gps, POWER GAIN (dB) Pout, OUTPUT POWER (WATTS) PULSED 400 24 400 Pout, OUTPUT POWER (WATTS) PEAK Figure 10. Output Power versus Input Power Figure 11. Power Gain and Drain Efficiency versus Output Power 109 MTTF (HOURS) 108 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 275 W Peak, Pulse Width = 128 sec, Duty Cycle = 10%, and D = 65.5%. Figure 12. MTTF versus Junction Temperature -- Pulse MMRF1008H MMRF1008HS MMRF1008GH RF Device Data Freescale Semiconductor, Inc. 7 Zo = 5 Zload f = 1030 MHz Zsource f = 1030 MHz f MHz Zsource Zload 1030 2.30 -- j3.51 4.0 -- j2.14 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 13. Series Equivalent Source and Load Impedance MMRF1008H MMRF1008HS MMRF1008GH 8 RF Device Data Freescale Semiconductor, Inc. C8 C6 C12 C10 C4 C2 R1 C14 C13 C3 CUT OUT AREA C1 C11 C5 C9 C7 R2 Figure 14. MMRF1008H(HS) Test Circuit Component Layout -- 960--1215 MHz Table 7. MMRF1008H(HS) Test Circuit Component Designations and Values -- 960--1215 MHz Part Description Part Number Manufacturer C1 2.7 pF Chip Capacitor ATC100B2R7BT500XT ATC C2, C3, C4, C5 33 pF Chip Capacitors ATC100B330JT500XT ATC C6, C7 1000 pF Chip Capacitors ATC100B102JT50XT ATC C8, C9, C10 2.2 F, 100 V Chip Capacitors G2225X7R225KT3AB ATC C11 9.1 pF Chip Capacitor ATC100B9R1CT500XT ATC C12 22 F, 25 V Tantalum Capacitor TPSD226M025R0200 AVX C13, C14 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp R1, R2 47 , 1/4 W Chip Resistors CRCW120647R0FKEA Vishay PCB 0.030, r = 2.55 AD255A Arlon MMRF1008H MMRF1008HS MMRF1008GH RF Device Data Freescale Semiconductor, Inc. 9 TYPICAL CHARACTERISTICS -- 960--1215 MHz Gps, POWER GAIN (dB) 24 22 70 f = 1215 MHz VDD = 50 Vdc IDQ = 100 mA Pulse Width = 128 sec Duty Cycle = 10% 1150 MHz 60 960 MHz 1030 MHz 50 D 1215 MHz 1150 MHz 20 Gps 960 MHz 18 40 30 D, DRAIN EFFICIENCY (%) 26 1030 MHz 16 0 50 150 100 200 250 300 20 350 Pout, OUTPUT POWER (WATTS) PEAK Figure 15. Power Gain and Drain Efficiency versus Output Power Gps, POWER GAIN (dB) 19 66 Gps 64 D 18 17 62 60 16 58 15 0 IRL 14 13 12 11 950 --5 --10 VDD = 50 Vdc, IDQ = 100 mA, Pout = 250 W Peak (25 W Avg.) Pulse Width = 128 sec, Duty Cycle = 10% --15 --20 975 1000 1025 1050 1075 1100 1125 1150 1175 1200 1225 IRL, INPUT RETURN LOSS (dB) 20 D, DRAIN EFFICIENCY (%) 68 21 f, FREQUENCY (MHz) Figure 16. Broadband Performance @ Pout = 250 Watts Peak MMRF1008H MMRF1008HS MMRF1008GH 10 RF Device Data Freescale Semiconductor, Inc. Zo = 10 Zload f = 960 MHz f = 1215 MHz f = 1215 MHz f = 960 MHz Zsource f MHz Zsource Zload f MHz Zsource Zload 960 4.00 -- j4.14 3.96 -- j1.70 1100 5.49 -- j3.04 3.32 -- j1.43 970 4.05 -- j3.99 3.90 -- j1.67 1110 5.47 -- j3.07 3.31 -- j1.42 980 4.16 -- j3.86 3.83 -- j1.66 1120 5.52 -- j3.09 3.24 -- j1.40 990 4.33 -- j3.71 3.75 -- j1.66 1130 5.68 -- j3.13 3.12 -- j1.39 1000 4.49 -- j3.57 3.70 -- j1.65 1140 5.89 -- j3.20 2.99 -- j1.36 1010 4.61 -- j3.43 3.68 -- j1.62 1150 6.06 -- j3.32 2.88 -- j1.30 1020 4.66 -- j3.33 3.69 -- j1.59 1160 6.09 -- j3.47 2.83 -- j1.23 1030 4.68 -- j3.26 3.69 -- j1.54 1170 5.98 -- j3.60 2.83 -- j1.19 1040 4.72 -- j3.20 3.67 -- j1.52 1180 5.85 -- j3.69 2.80 -- j1.15 1050 4.83 -- j3.13 3.59 -- j1.53 1190 5.78 -- j3.76 2.75 -- j1.11 1060 5.02 -- j3.06 3.48 -- j1.53 1200 5.81 -- j3.87 2.65 -- j1.07 1070 5.24 -- j2.99 3.38 -- j1.53 1210 5.89 -- j4.02 2.52 -- j1.01 1080 5.42 -- j2.96 3.32 -- j1.51 1215 5.91 -- j4.11 2.47 -- j0.97 1090 5.51 -- j2.99 3.30 -- j1.47 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 17. Series Equivalent Source and Load Impedance -- 960--1215 MHz MMRF1008H MMRF1008HS MMRF1008GH RF Device Data Freescale Semiconductor, Inc. 11 PACKAGE DIMENSIONS MMRF1008H MMRF1008HS MMRF1008GH 12 RF Device Data Freescale Semiconductor, Inc. MMRF1008H MMRF1008HS MMRF1008GH RF Device Data Freescale Semiconductor, Inc. 13 MMRF1008H MMRF1008HS MMRF1008GH 14 RF Device Data Freescale Semiconductor, Inc. MMRF1008H MMRF1008HS MMRF1008GH RF Device Data Freescale Semiconductor, Inc. 15 MMRF1008H MMRF1008HS MMRF1008GH 16 RF Device Data Freescale Semiconductor, Inc. MMRF1008H MMRF1008HS MMRF1008GH RF Device Data Freescale Semiconductor, Inc. 17 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Dec. 2013 Initial Release of Data Sheet 1 May 2016 Added part number MMRF1008GH, p. 1 Added NI--780GH--2L package photo, p. 1, and Mechanical Outline, pp. 16--17 Added Fig. 1, Pin Connections, p. 1 Table 5, Ordering Information: tape and reel information, p. 1, placed in Ordering Information table, p. 3 MMRF1008H MMRF1008HS MMRF1008GH 18 RF Device Data Freescale Semiconductor, Inc. How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including "typicals," must be validated for each customer application by customer's technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2013, 2016 Freescale Semiconductor, Inc. MMRF1008H MMRF1008HS MMRF1008GH Document Number: RF Device Data MMRF1008H Rev. 1, 5/2016Semiconductor, Inc. Freescale 19