MMRF1008H MMRF1008HS MMRF1008GH
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
RF power transistors designed for applications operating at frequencies
from 900 to 1215 MHz. These devices are suitable for use in defense and
commercial pulse applications, such as IFF and DME.
Typical Pulse Performance: VDD =50Vdc,I
DQ = 100 mA, Pout =
275 W Peak (27.5 Watts Avg.), f = 1030 MHz, Pulse Width = 128 sec,
Duty Cycle = 10%
Power Gain — 20.3 dB
Drain Efficiency — 65.5%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 275 W Peak Power
Typical Broadband Performance: VDD =50Vdc,I
DQ = 100 mA, Pout =
250 W Peak (25 Watts Avg.), f = 960--1215 MHz, Pulse Width =
128 sec, Duty Cycle = 10%
Power Gain — 19.8 dB
Drain Efficiency — 58%
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
960--1215 MHz, 275 W, 50 V
PULSE
LATERAL N--CHANNEL
RF POWER MOSFETs
MMRF1008H
MMRF1008HS
MMRF1008GH
Note: The backside of the package is the
source terminal for the transistor.
(Top View)
Drain
21
Figure 1. Pin Connections
Gate
NI--780H--2L
MMRF1008H
NI--780S--2L
MMRF1008HS
NI--780GH--2L
MMRF1008GH
Document Number: MMRF1008H
Rev. 1, 5/2016
Freescale Semiconductor
Technical Data
Freescale Semiconductor, Inc., 2013, 2016.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
MMRF1008H MMRF1008HS MMRF1008GH
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +100 Vdc
Gate--Source Voltage VGS --6.0, +10 Vdc
Storage Temperature Range Tstg -- 65 to +150 C
Case Operating Temperature TC150 C
Operating Junction Temperature (1) TJ225 C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2) Unit
Thermal Resistance, Junction to Case
Case Temperature 80C, 275 W Peak 128 sec Pulse Width, 10% Duty Cycle,
50 Vdc, IDQ = 100 mA, 1030 MHz
ZJC 0.08 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2, passes 2600 V
Machine Model (per EIA/JESD22--A115) B, passes 200 V
Charge Device Model (per JESD22--C101) IV, passes 2000 V
Table 4. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 10 Adc
Drain--Source Breakdown Voltage
(VGS =0Vdc,I
D= 100 mA)
V(BR)DSS 110 — — Vdc
Zero Gate Voltage Drain Leakage Current
(VDS =50Vdc,V
GS =0Vdc)
IDSS — — 10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS =90Vdc,V
GS =0Vdc)
IDSS — — 100 Adc
On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D= 662 Adc)
VGS(th) 0.9 1.7 2.4 Vdc
Gate Quiescent Voltage
(VDD =50Vdc,I
D= 100 mAdc, Measured in Functional Test)
VGS(Q) 1.7 2.4 3.2 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=1.6Adc)
VDS(on) —0.25 —Vdc
Dynamic Characteristics (3)
Reverse Transfer Capacitance
(VDS =50Vdc30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Crss —0.46 —pF
Output Capacitance
(VDS =50Vdc30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Coss —352 —pF
Input Capacitance
(VDS =50Vdc,V
GS =0Vdc30 mV(rms)ac @ 1 MHz)
Ciss —695 —pF
1. Continuous use at maximum temperature will affect MTTF.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
3. Part internally matched both on input and output.
(continued)
MMRF1008H MMRF1008HS MMRF1008GH
3
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD =50Vdc,I
DQ = 100 mA, Pout = 275 W Peak (27.5 W Avg.), f = 1030 MHz,
Pulse, 128 sec Pulse Width, 10% Duty Cycle
Power Gain Gps 19 20.3 22 dB
Drain Efficiency D63 65.5 — %
Input Return Loss IRL —-- 1 4 -- 9 dB
Typical Broadband Performance — 960--1215 MHz (In Freescale 960--1215 MHz Test Fixture, 50 ohm system) VDD =50Vdc,
IDQ = 100 mA, Pout = 250 W Peak (25 W Avg.), f = 960--1215 MHz, Pulse, 128 sec Pulse Width, 10% Duty Cycle
Power Gain Gps —19.8 —dB
Drain Efficiency D—58 — %
Table 5. Ordering Information
Device Tape and Reel Information Package
MMRF1008HR5
R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel
NI--780H--2L
MMRF1008HSR5 NI--780S--2L
MMRF1008GHR5 NI--780GH--2L
1. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GH) parts.
4
RF Device Data
Freescale Semiconductor, Inc.
MMRF1008H MMRF1008HS MMRF1008GH
Figure 2. MMRF1008H(HS) Test Circuit Schematic
Z13 0.190x 1.250Microstrip
Z14, Z15 0.517x 0.080Microstrip
Z16 0.225x 1.250Microstrip
Z17 0.860x 0.975Microstrip
Z18 0.140x 0.950Microstrip
Z19 0.028x0.110Microstrip
Z20 0.397x 0.040Microstrip
Z21 0.264x 0.480Microstrip
Z22 0.100x 0.082Microstrip
Z23 0.521x 0.082Microstrip
PCB Arlon CuClad 250GX--0300--55--22, 0.030,r=2.55
Z1 1.055x 0.082Microstrip
Z2 0.100x 0.082Microstrip
Z3 0.084x 0.395Microstrip
Z4 0.419x 0.040Microstrip
Z5 0.498x 0.466Microstrip
Z6 0.110x 1.060Microstrip
Z7 0.050x 1.300Microstrip
Z8 0.092x 1.300Microstrip
Z9 0.219x 1.420Microstrip
Z10 0.087x 1.420Microstrip
Z11, Z12 0.187x 0.050Microstrip
Z1
RF
INPUT
C1
Z2 Z4
DUT
C9
RF
OUTPUT
VBIAS
VSUPPLY
C7
C12 C13 C14
+
Z21
R4
Z3
C15
+
Z5
C6
Z9
Z20Z19Z18Z17Z16Z13
Z8Z7Z6
Z11
Z14
Z10
R3
C8
C5
C4
Z12
R1
C2
R2
C3
Z15
Z22 Z23
C10 C11
Table 6. MMRF1008H(HS) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C4, C5 1.5 pF Chip Capacitors ATC100B1R5BT500XT ATC
C2, C7, C11, C13 2.2 F, 100 V Chip Capacitors G2225X7R225KT3AB ATC
C3, C6, C10, C12 33 pF Chip Capacitors ATC100B330JT500XT ATC
C8 22 F, 25 V Chip Capacitor TPSD226M025R0200 AVX
C9 9.1 pF Chip Capacitor ATC100B9R1CT500XT ATC
C14, C15 470 F, 63 V Electrolytic Capacitors MCGPA63V477M13X26--RH Multicomp
R1, R2, R3, R4 0 , 3.5 A Chip Resistors CRCW12060000Z0EA Vishay
MMRF1008H MMRF1008HS MMRF1008GH
5
RF Device Data
Freescale Semiconductor, Inc.
Figure 3. MMRF1008H(HS) Test Circuit Component Layout
R4
CUT OUT AREA
C8 C7
R3
C6
C5
C1
C4 C3
R2
C2
C11
C10
C9
C12
C13
C14 C15
R1
6
RF Device Data
Freescale Semiconductor, Inc.
MMRF1008H MMRF1008HS MMRF1008GH
TYPICAL CHARACTERISTICS
50
0.1
1000
02010
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
30
Ciss
10
1
40
Coss
Crss
Measured with 30 mV(rms)ac @ 1 MHz
VGS =0Vdc
100
0
160
0
VDD =50Vdc,I
DQ = 100 mA
f = 1030 MHz, Pulse Width = 128 sec
10
100
DUTY CYCLE (%)
Figure 5. Safe Operating Area
MAXIMUM OPERATING Tcase (C)
25 40
140
120
80
60
40
20
52015 30 35
Pout = 275 W
Pout = 200 W
Pout = 250 W
24
50
30
100
22
20
70
60
50
40
Pout, OUTPUT POWER (WATTS) PEAK
Figure 6. Power Gain and Drain Efficiency
versus Output Power
Gps, POWER GAIN (dB)
D, DRAIN EFFICIENCY (%)
D
16
400
Gps
18
VDD =50Vdc,I
DQ = 100 mA, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
60
28
55
54
53
Pin, INPUT POWER (dBm) PEAK
Figure 7. Output Power versus Input Power
56
52
51
50
49
30 32 34 36 38 40
Pout, OUTPUT POWER (dBm)
P3dB = 55.29 dBm (338 W)
Actual
Ideal
P1dB = 54.76 dBm (299 W)
48
VDD =50Vdc,I
DQ = 100 mA, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
57
58
59
17
22
50
21
Pout, OUTPUT POWER (WATTS) PEAK
Figure 8. Power Gain versus Output Power
Gps, POWER GAIN (dB)
100
20
IDQ = 400 mA
400
300 mA
19
18
200 mA
100 mA
VDD = 50 Vdc, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
Figure 9. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) PEAK
Gps, POWER GAIN (dB)
VDD =30V
15
22
50
16
21
35 V
20
45 V
100 400
50 V
19
18
17
40 V
IDQ = 100 mA, f = 1030 MHz
Pulse Width = 128 sec
Duty Cycle = 10%
MMRF1008H MMRF1008HS MMRF1008GH
7
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
6
0
400
031
200
100
Pin, INPUT POWER (WATTS) PEAK
Figure 10. Output Power versus Input Power
Pout, OUTPUT POWER (WATTS) PULSED
24
300
5
TC=--30_C
VDD =50Vdc,I
DQ = 100 mA, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
85_C
55_C
25_C
16
24
50
24
72
100
60
48
Pout, OUTPUT POWER (WATTS) PEAK
Figure 11. Power Gain and Drain Efficiency versus
Output Power
Gps, POWER GAIN (dB)
D, DRAIN EFFICIENCY (%)
D
22
400
25_C
TC=--30_C
85_C
36
20
18
55_C
VDD =50Vdc,I
DQ = 100 mA, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
Gps
-- 3 0 _C
25_C
55_C
85_C
250
109
90
108
107
105
110 130 150 170 190
MTTF (HOURS)
210 230
106
25090
TJ, JUNCTION TEMPERATURE (C)
Figure 12. MTTF versus Junction Temperature — Pulse
This above graph displays calculated MTTF in hours when the device
is operated at VDD =50Vdc,P
out = 275 W Peak, Pulse Width = 128 sec,
Duty Cycle = 10%, and D= 65.5%.
110 130 150 170 190
MTTF (HOURS)
210 230
8
RF Device Data
Freescale Semiconductor, Inc.
MMRF1008H MMRF1008HS MMRF1008GH
Zo=5
Zload
Zsource
f = 1030 MHz
f = 1030 MHz
f
MHz
Zsource
Zload
1030 2.30 -- j3.51 4.0 -- j2.14
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 13. Series Equivalent Source and Load Impedance
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
MMRF1008H MMRF1008HS MMRF1008GH
9
RF Device Data
Freescale Semiconductor, Inc.
Figure 14. MMRF1008H(HS) Test Circuit Component Layout — 960--1215 MHz
CUT OUT AREA
C12 C10 R1 C2
C1
R2
C3
C5
C7 C9
C11
C13 C14
C4
C6 C8
Table 7. MMRF1008H(HS) Test Circuit Component Designations and Values — 960--1215 MHz
Part Description Part Number Manufacturer
C1 2.7 pF Chip Capacitor ATC100B2R7BT500XT ATC
C2, C3, C4, C5 33 pF Chip Capacitors ATC100B330JT500XT ATC
C6, C7 1000 pF Chip Capacitors ATC100B102JT50XT ATC
C8, C9, C10 2.2 F, 100 V Chip Capacitors G2225X7R225KT3AB ATC
C11 9.1 pF Chip Capacitor ATC100B9R1CT500XT ATC
C12 22 F, 25 V Tantalum Capacitor TPSD226M025R0200 AVX
C13, C14 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp
R1, R2 47 , 1/4 W Chip Resistors CRCW120647R0FKEA Vishay
PCB 0.030,r=2.55 AD255A Arlon
10
RF Device Data
Freescale Semiconductor, Inc.
MMRF1008H MMRF1008HS MMRF1008GH
TYPICAL CHARACTERISTICS — 960--1215 MHz
16
26
50
20
70
100
50
40
Pout, OUTPUT POWER (WATTS) PEAK
Figure 15. Power Gain and Drain Efficiency versus
Output Power
Gps, POWER GAIN (dB)
D, DRAIN EFFICIENCY (%)
D
22
350
f = 1215 MHz
30
20
18
VDD =50Vdc
IDQ = 100 mA
Pulse Width = 128 sec
Duty Cycle = 10%
Gps
24
0 150 200 250 300
60
1150 MHz
1030 MHz
960 MHz
1215 MHz 1150 MHz
1030 MHz
960 MHz
Figure 16. Broadband Performance @ Pout = 250 Watts Peak
11
21
950
f, FREQUENCY (MHz)
15
13
975
17
1000 1025 1050 1075 1100 1125 1225
-- 2 0
68
64
60
0
-- 5
Gps, POWER GAIN (dB)
12
14
16
18 62
58
-- 1 0
-- 1 5
D, DRAIN
EFFICIENCY (%)
IRL, INPUT RETURN
LOSS (dB)
VDD =50Vdc,I
DQ = 100 mA, Pout = 250 W Peak (25 W Avg.)
Pulse Width = 128 sec, Duty Cycle = 10%
Gps
D
IRL
19
20 66
1150 1175 1200
MMRF1008H MMRF1008HS MMRF1008GH
11
RF Device Data
Freescale Semiconductor, Inc.
Zo=10
Zload
Zsource
f = 1215 MHz
f = 960 MHz
f = 960 MHz
f = 1215 MHz
f
MHz
Zsource
Zload
960 4.00 -- j4.14 3.96 -- j1.70
970 4.05 -- j3.99 3.90 -- j1.67
980 4.16 -- j3.86 3.83 -- j1.66
990 4.33 -- j3.71 3.75 -- j1.66
1000 4.49 -- j3.57 3.70 -- j1.65
1010 4.61 -- j3.43 3.68 -- j1.62
1020 4.66 -- j3.33 3.69 -- j1.59
1030 4.68 -- j3.26 3.69 -- j1.54
1040 4.72 -- j3.20 3.67 -- j1.52
1050 4.83 -- j3.13 3.59 -- j1.53
1060 5.02 -- j3.06 3.48 -- j1.53
1070 5.24 -- j2.99 3.38 -- j1.53
1080 5.42 -- j2.96 3.32 -- j1.51
1090 5.51 -- j2.99 3.30 -- j1.47
f
MHz
Zsource
Zload
1100 5.49 -- j3.04 3.32 -- j1.43
1110 5.47 -- j3.07 3.31 -- j1.42
1120 5.52 -- j3.09 3.24 -- j1.40
1130 5.68 -- j3.13 3.12 -- j1.39
1140 5.89 -- j3.20 2.99 -- j1.36
1150 6.06 -- j3.32 2.88 -- j1.30
1160 6.09 -- j3.47 2.83 -- j1.23
1170 5.98 -- j3.60 2.83 -- j1.19
1180 5.85 -- j3.69 2.80 -- j1.15
1190 5.78 -- j3.76 2.75 -- j1.11
1200 5.81 -- j3.87 2.65 -- j1.07
1210 5.89 -- j4.02 2.52 -- j1.01
1215 5.91 -- j4.11 2.47 -- j0.97
Zsource = Test circuit impedance as measured from gate to ground.
Zload = Test circuit impedance as measured from drain to ground.
Figure 17. Series Equivalent Source and Load Impedance — 960--1215 MHz
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
12
RF Device Data
Freescale Semiconductor, Inc.
MMRF1008H MMRF1008HS MMRF1008GH
PACKAGE DIMENSIONS
MMRF1008H MMRF1008HS MMRF1008GH
13
RF Device Data
Freescale Semiconductor, Inc.
14
RF Device Data
Freescale Semiconductor, Inc.
MMRF1008H MMRF1008HS MMRF1008GH
MMRF1008H MMRF1008HS MMRF1008GH
15
RF Device Data
Freescale Semiconductor, Inc.
16
RF Device Data
Freescale Semiconductor, Inc.
MMRF1008H MMRF1008HS MMRF1008GH
MMRF1008H MMRF1008HS MMRF1008GH
17
RF Device Data
Freescale Semiconductor, Inc.
18
RF Device Data
Freescale Semiconductor, Inc.
MMRF1008H MMRF1008HS MMRF1008GH
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Dec. 2013 Initial Release of Data Sheet
1May 2016 Added part number MMRF1008GH, p. 1
Added NI--780GH--2L package photo, p. 1, and Mechanical Outline, pp. 16--17
Added Fig. 1, Pin Connections, p. 1
Table 5, Ordering Information: tape and reel information, p. 1, placed in Ordering Information table, p. 3
MMRF1008H MMRF1008HS MMRF1008GH
19
RF Device Data
Freescale Semiconductor, Inc.
Information in this document is provided solely to enable system and software
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information in this document.
Freescale reserves the right to make changes without further notice to any products
herein. Freescale makes no warranty, representation, or guarantee regarding the
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liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation consequential or incidental
damages. “Typical” parameters that may be provided in Freescale data sheets and/or
specifications can and do vary in different applications, and actual performance may
vary over time. All operating parameters, including “typicals,” must be validated for
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Document Number: MMRF1008H
Rev. 1, 5/2016
