KST-9105-002 2
SPS8550
Absolute maximum ratings (Ta=25°C)
Characteristic Symbol Ratings Unit
Collector-Base voltage VCBO -15 V
Collector-Emitter voltage VCEO -12 V
Emitter-Base voltage VEBO -6.5 V
Collector current IC -1.5 A
Collector dissipation PC 625 mW
Junction temperature TJ 150
°C
Storage temperature Tstg -55~150
°C
Electrical Characteristics (Ta=25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector-Base breakdown voltage BVCBO IC=-50µA, IE=0 -15 - - V
Collector-Emitter breakdown voltage BVCEO I
C=-1mA, IB=0 -12 - - V
Emitter-Base breakdown voltage BVEBO IE=-50µA, IC=0 -6.5 - - V
Collector cut-off current ICBO V
CB=-15V, IE=0 - - -0.1
µA
Emitter cut-off current IEBO V
EB=-6V, IC=0 - - -0.1
µA
DC current gain hFE V
CE=-1V, IC=-100mA 200 - 450 -
Collector-Emitter saturation voltage VCE(sat) I
C=-800mA, IB=-80mA - - -0.5 V
Transistor frequency fT V
CE=-5V, IC=-50mA - 260 - MHz
Collector output capacitance Cob V
CB=-10V, IE=0, f=1MHz - 5 - pF