FAIRCHILD SEMNTCONDUCTOR 4 Del S4b9b74 Oo278a5 0 a ed IRF240- 243/IRF640-643 7- 37-13 Pale crit N-Channel Power MOSFETs, A Schlumberger Company 18 A, 150-200 V : Power And Discrete Division ; Description TO-204AE TO-220AB | These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed S applications, such as switching power supplies, UPS, AC and DCG motor controls, relay and solenoid drivers and high energy pulse circuits. @ Low Rosjon) S Vas Rated at +20 V \s00020F ssn0010F Silicon Gate for Fast Switching Speeds Ipss, Vosion Specified at Elevated Temperature needs Ihteay Rugged Low Drive Requirements heoas nreas @ Ease of Paralleling : Product Summary Ip at Ip at Part Number Voss Ros (on) To = 25C To = 100C Case Style IRF240 200 V 0.18 Q 1B A ITA TO-204AE IRF241 150 V 0.18 2 18 A 11 A IRF242 200 V 0.22 2 16 A 1OA IRF243 160 V 0.22 Q 16 A 10 A IRF640 200 V 0.18 2 18 A 1A TO-220AB IRF641 150 V 0.18 82 18 A 11 A \ IRF642 200 V 0.22 2 16 A 10 A : IRF643 150 V 0.22 2 16 A 10 A ! : Notes For information concerning connection diagram and package outline, refer to Section 7. ! 2-98 SedFAIRCHILD SEMICONDUCTOR | a4 DEB s49n74 ooe7aae 1 i ~ : IRF240-243/IRF640-643 T=39-13 Maximum Ratings Rating Rating IRF240/242 IRF241/243 Symbol Characteristic IRF640/642 IRF641/643 Unit Voss Drain to Source Voltage 200 150 V VocR Drain to Gate Voltage! 200 150 Vv Reg = 20 kQ Ves Gate to Source Voltage 20 +20 Vv Tj, Tstg | Operating Junction and ~55 to +150 -55 to +150 C Storage Temperatures TL Maximum Lead Temperature 275 275 C : for Soldering Purposes, : 1/8" From Case for 5 s i Maximum Thermal Characteristics IRF240-243 IRF640-643 Rac Thermal Resistance, 1.0 1.0 C/W dunction to Case Pp Total Power Dissipation 125 125 Ww at Tg = 25C lpm Pulsed Drain Current? 72 72 A Electrical Characteristics (Tc = 25C unless otherwise noted) Symbol Characteristic | Min | Max Unit | Test Conditions Off Characteristics Viarypss | Drain Source Breakdown Voltage Vv Vag =0 V, Ip = 250 pA IRF240/242/640/642 200 : IRF241/243/641/643 150 : ipss Zero Gate Voliage Drain Current 250 BA Vps = Rated Voss, Veg = 0 V : 1000 uA | Vpg=0.8x Rated Voss, : Ves =0 V, Te = 125C : lass Gate-Body Leakage Current nA Vas = +20 V, Vps=0 V : IRF240-243 +100 : IRF640-643 +500 On Characteristics Vasc) Gate Threshold Voltage 2.0 4.0 v Ip = 250 uA, Vps = Ves Rpsvon) Static Drain-Source On-Resistance? 2 Veg =10 V, Ip=10A IRF240/241/640/641 0.18 IRF242/243/642/643 0.22 Gis Forward Transconductance 6.0 S (3) | Vps=10 V, Ip=10 A 2-99 i i | i i | { \ t Iower 4 FAIRCHILD SEMICONDUCTOR 2 nant ines aH IRF240-243/IRF640-643 | T-39~-13 Electrical Characteristics (Cont.) (Tc = 25C unless otherwise noted) Symbol Characteristic | Min Max | Unit | Test Conditions Dynamic Characteristics Ciss Input Capacitance 1600 pF Vos = 25 V, Vag =0 V Coss Output Capacitance 750 pF f= 1.0 MHz Cres Reverse Transfer Capacitance 300 pF Switching Characteristics (Tc = 25C, Figures 1, 2) tg(on) Turn-On Delay Time 30 ns Vop = 75 V, Ip=10 A ty Rise Time 60 ns Res We 4 Raen = 4.7 2 I tuff Turn-Off Delay Time 80 ns tf Fall Time 60 ns taton) Turn-On Delay Time 60 ns Vpp = 25 V, Ip=10A ty Rise Time 300 ns Roe to Raen = 50 0 ta(otf Turn-Off Delay Time 200 ns te Fall Time 150 ns Qg Total Gate Charge 60 nc Vesg=10 V, Ilp=22 A Vpp = 120 V Symbol Characteristic Typ Max Unit Test Conditions Source-Drain Diode Characteristics Vsp Diode Forward Voltage IRF240/241/640/641 1.7 2.0 v Is = 18 A; Vag =0 V IRF242/243/642/643 17 19 Vv Is =16 A; Vag =0 V ter Reverse Recovery Time 400 ns Is =4 A; dlg/dt = 25 A/uS Notes 1. Tj = +26C to + 150C 2. Pulse width limited by maximum Ty. 3. Switching time measurements performed on LEM TR-58 test equipment. 2-100 ay Def s4n9b74 0027887 3 i1 we 4 ae SEMICONDUCTOR &y ve J4UB9b74 00e7484 i | IRF240-243/IRF640-643 T=39-13 ee Typical Electrical Characteristics 1 t . | Figure 1 Switching Test Circuit Figure 2 Switching Waveforms Vin Voo -j A aon Your OUTPUT, Vout | INVERTED > _ i | i i > Ros (INPUT, Vin 10% | L PULSE WIDTH| - crausor \WFOOGOGF Typical Performance Curves Figure 4 Static Drain to Source Resistance Figure 3 Output Characteristics vs Drain Current i 24 20 w 0.3 s Ty = 125C * 8 5 ei 2g 12 oa z 26 < wn 5 e Ee I I 0.41 2 | a i 4 i o 0 1 2 3 4 5 o 4 8 12 16 20 VosDRAIN SOURCE VOLTAGEV IbDRAIN CURRENTA PCIBI2OF PCIdaaOF Figure 6 Temperature Variation of Gate to Figure Transfer Characteristics Source Threshold Voltage 20 1.3 uw a z 1.2 16 S < 8 ti i 2 iw 12 a 0 & z! 2 F uw z bE 09 ge 3 & a 4 z Ez 0.7 2 3 4 5 6 7 8 9 10 -50 Qo 50 100 150 YosGATE TO SOURCE VOLTAGEV Ty -JUNCTION TEMPERATUREC PCIOdAOr PCOgeaIF 2-101au Def a4e9674 Oo27aa4 7? i IRF240-243/IRF640-643 FAIRCHILD SEMICONDUCTOR 7-39-13 Typical Performance Curves (Cont.) Figure 7 Capacitance vs Drain to Source Voltage Total Gate Charge | t I Figure 8 Gate to Source Voltage vs ' 104 t tT > d % z t 103 3 8 iu z z g o 2 8 < 2 102 uw e 3 : 108 i 102 0 20 40 60 80 3 VpsDRAIN SOURCE VOLTAGE--V OQgTOTAL GATE CHARGEnc i PCIsser PCIOa6OF . Figure 9 Forward Biased Safe Operating Area Figure 10 Transient Thermal Resistance vs Time 102 $ z t.. Es 5 to" z 5 Bs ey o 23 Zz 2 =< ? za = Fe i 109 de A bb he | s z to s fn Outy Factor, D = = G=150C SINGLE PULSE Dcurves apply to train 2 of heating pulses =To+Pye 10-1 10 40? VosDRAIN TO SOURCE VOLTAGEV tTIMEms Potog70F Pore 1cer 2-102