MPSH10 MPSH11 SILICON NPN RF TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSH10 and MPSH11 are silicon NPN RF transistors manufactured by the epitaxial planar process and designed for low noise UHF/VHF amplifier and high output oscillator applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage SYMBOL VCBO VCEO Emitter-Base Voltage Power Dissipation Operating and Storage Junction Temperature Thermal Resistance VEBO PD TJ, Tstg JA 30 UNITS V 25 V 3.0 V 350 mW -65 to +150 C 357 C/W MAX 100 UNITS nA 100 nA ELECTRICAL SYMBOL ICBO IEBO CHARACTERISTICS: (TA=25C unless otherwise noted) TEST CONDITIONS MIN VCB=25V VEB=2.0V BVCBO IC=100A 30 V BVCEO IC=1.0mA 25 V BVEBO IE=10A IC=4.0mA, IB=0.4mA VCE=10V, IB=4.0mA 3.0 VCE=10V, IC=4.0mA 60 VCE=10V, IC=4.0mA, f=100MHz VCB=10V, IE=0, f=1.0MHz 650 VCE(SAT) VBE(ON) hFE fT Ccb Crb Crb rb'Cc VCB=10V, IE=0, f=1.0MHz (MPSH10) VCB=10V, IE=0, f=1.0MHz (MPSH11) VCB=10V, IC=4.0mA, f=31.8MHz V 0.50 V 0.95 V MHz 0.70 pF 0.35 0.65 pF 0.60 0.90 pF 9.0 ps R0 (22-May 2013) MPSH10 MPSH11 SILICON NPN RF TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING: FULL PART NUMBER R0 (22-May 2013) w w w. c e n t r a l s e m i . c o m