MPSH10
MPSH11
SILICON
NPN RF TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPSH10 and
MPSH11 are silicon NPN RF transistors manufactured
by the epitaxial planar process and designed for low
noise UHF/VHF amplifier and high output oscillator
applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 3.0 V
Power Dissipation PD 350 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 357 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=25V 100 nA
IEBO V
EB=2.0V 100 nA
BVCBO I
C=100μA 30 V
BVCEO I
C=1.0mA 25 V
BVEBO I
E=10μA 3.0 V
VCE(SAT) I
C=4.0mA, IB=0.4mA 0.50 V
VBE(ON) V
CE=10V, IB=4.0mA 0.95 V
hFE V
CE=10V, IC=4.0mA 60
fT V
CE=10V, IC=4.0mA, f=100MHz 650 MHz
Ccb V
CB=10V, IE=0, f=1.0MHz 0.70 pF
Crb V
CB=10V, IE=0, f=1.0MHz (MPSH10) 0.35 0.65 pF
Crb V
CB=10V, IE=0, f=1.0MHz (MPSH11) 0.60 0.90 pF
rb’Cc V
CB=10V, IC=4.0mA, f=31.8MHz 9.0 ps
TO-92 CASE
R0 (22-May 2013)
www.centralsemi.com
MPSH10
MPSH11
SILICON
NPN RF TRANSISTORS
LEAD CODE:
1) Base
2) Emitter
3) Collector
MARKING:
FULL PART NUMBER
TO-92 CASE - MECHANICAL OUTLINE
www.centralsemi.com
R0 (22-May 2013)
