BH 44692464 0000305 3 JSemitpon semiconpuctors ascrete Semitronics Corp. INTEX/ SEMITRONICS CORP cr?E Dp Or 7T~ Of - ili diod Maximum Peak Maximum Forward Reverse Reverse Current Reverse Recovery Power Reverse Voltage Forward Voltage Current Current (uA) 160C Voltage Capacitance Time Dissipation Case Type (volts) (volts) (mA) (uA) 25C (See Notes) (volts) (pf) (u sec) (m Style IN82A 5.0 0.5 15 15 0.5 _ _ 250 DO-7 A195 50 2,0 1,5 60 600 40 _ 0,1 250 00-7 INISSA 56 1.0 40 _ _ 0,1 250 D0-7 , AN185 50 2.0 2.0 89 700 > 0,1 250 DO-7 f196 50 2.0 15 40 500 50 -_ 0.1 250 DO- W200 6.8 1.0 0 0.5 5 (2) 6.8 50* _- 150 C-1 8201 8.2 10 35 0.5 5 (2) 8.2 35* _ 150 C-1 N202 | 10 1.0 30 0.5 5 (2) 10 30* _- 150 C-1 N203 12 1.0 23 0.5 5 (2) 12 28* _ 150 C1 W204 15 1.0 7 0.5 5 (2) 15 25* _ 150 C1 208 18 1.0 12 0.1 10 (2) 18 20* _ 150 C-1 N206 22 1.0 9 0.1 10 (2) 22 15* _ 150 C-1 N207 27 1.0 7 0.1 10 (2) 27 12* ~ 150 C-1 208 33 1.0 5.5 0.1 10 a 33 10* _ 150 C-1 A209 39 1.0 4.5 0.1 10 (2 39 8* 150 -1 N210 47 1.0 3.5 0.1 10 2) 47 6* ~ 150 C1 N211 66 1.0 27 1.0 f 56 5.6* _ 150 Cl 1N212 68 1.0 2.0 1.0 50 (2) 68 .2* _ 150 C-1 4213 82 1.0 15 1.0 50 (2) 82 4.8* _ 150 C-1 N14 100 1.0 1,2 1.0 50 (2) 100 4.5 - 150 C-1 N215 120 1,0 0.9 16 50 (2) 120 4.2* _ 150 C1 N216 150 1.0 0.7 5 100 (2) 150 3.8* _ 150 C-1 217 0 4.0 6.5 5 100 (2) 180 3,5* _ 150 C-1 N2i8 220 4.0 6.0 5 00 3 220 3.2" _ 150 C-l N219 270 4.0 3.0 5 100 (2) 270 3.0* _ 150 C-1 N220 330 4.0 2,2 5 100 (2) 330 2.8* _- 150 C-1 N22k 3 4.0 2.0 5 100 (2) 380 2.6* _ 150 C-1 N222 470 40 1.5 5 100 (2) 470 2.4* _ 150 G1 N251 1.0 5 0.1 10 (1) 10 _ 0.15 150 DO-7 N251A 125 1.0 10 lo _ 10 > _ 250 00-7 252 20 1.6 10 01 10 (1) 5 _ 0.15 150 DO-7 N252A 125 1.0 10 10 50 (1) 10 _ 0.15 250 00-7 15 1.0 15 001 0.1 (2) 10 .0** _ 150 DO-7 301 70 1.0 5 01 0.2 (2) 10 4.0** _ 150 C-47 N301A 70 1.0 18 01 0.2 (2) 10 .0** _ 150 C-47 302 225 1.0 1 01 0.5 3 10 2.0** _ 150 C-47 INSO2A 225 1.0 5 01 0.5 (2) 10 2.07* _ 150 C-47 4303 125 1.0 3 01 0.3 (2) 10 3.0** _ 150 DO-7 N3034 125 1.0 12 01 0.3 (2) 10 3.0** _ 150 00-7 1N3038 125 1,0 50 01 0.3 (2) 10 3.3** _ 150 00-7 4330 32 1.0 3 03 _ 20 _ _ 150 00-7 N331 16 1.0 5 01 _ 10 _ _ 1 00-7 W350 70 1.0 20 .03 5 (1) 60 - _- 150 C-1b N35] 120 1.0 20 03 5()) 100 _ _ 150 C-1b 4352 170 1.0 20 05 10 (1) 150 _ _ 150 C-ib 353 225 10 20 0.1 20 (1) 200 _ _- 150 Clb 354 325 1.0 20 0.1 20 (1) 300 _ _ 150 C-1b W379 8.2 1.0 35 0.5 5.0 (2) 8.2 _ _ 150 00-7 80 10 1,0 30 0.5 5.0 (2) 10 _ _ 150 DO-7 1N381 12 1.0 23 0.5 5,0 (2) 12 _ _ 150 DO-7 1N382 15 10 17 0.5 5.0 (2) 15 _ _ 150 DO-7 1N383 18 1.0 12 0.1 (2) 18 _ - 150 00-7 N384 22 1,0 9.0 01 10 (2) 22 _ _ 150 DO-7 1N385 27 1,0 7.0 01 10 (2) 27 _ _ 150 DO-7 TN386 33 1.0 5.5 0.1 10 (2) 33 _ _ 150 00-7 1N387 39 1.0 45 0.1 10 (2) 39 - _ 150 DO-7 1N388 47 1.0 3.5 0.1 10 (2) 47 _ 150 00-7 1N389 56 1.0 2.7 1.0 50 (2) 56 _ _ 150 00-7 1N390 68 1.0 2.0 1.0 50 (2) 68 _ _ 150 00-7 1N391 82 1.0 15 1,0 50 (2) 82 _ _ 150 DO-7 1N392 100 1.0 1.2 1.0 50 (2) 100 _ _ 150 DO-7 393 120 1.0 0.9 1.0 50 (2) 120 _ _ 150 00.7 1N394 150 1.0 0,7 5.0 100 (2) 150 _ _ 150 00-7 1N431 68 _ 10 _ 1.0 (3) 68 _ _ 150 G-1 1N432 40 1.0 10 -005 3 10 4 003 250 C-47 IN432A 40 1.0 20 _ 3 10 4 003 _ C-47 1N4326 40 1.0 50 _ 7 10 5.5 003 _ C-47 1N433 145 1.0 3.0 _ 7 10 13 003 _ C-47 IN433A 145 1.0 10 _ 7 10 15 003 _ C47 1N433B 145 1.0 50 _ 7 10 L5 003 _ 6-47 4N434 180 1.0 2 O21 0.4 (2) 10 1.0 _ 250 C-47 IN434A 180 1.0 7 _ 0.4 (2) 10 13 003 _ C-47 IN456 30 1.0 40 -025 25 _ - 250 DO-35 1N456A 30 1.0 100 025 5 25 _ _ 250 00-35 IN456AM 30 1.0 100 025 5 25 _ _ _ 00-35 Notes: (1) +125C = (2) 100C ~ (3) -+- 80C i @ 6V test voltage ** @ 10V test voltage mi 30 on teeINTEX/ SEMITRONICS CORP e7E D M@@ 4465244 000030 gm"a_| semitron hot line TOLL FREE NUMBER 800-777-3960 b 5 discrete devices =o, i] -0/-0/ s a s . Silicon diodes cont'd t Maximum Peak Maximum Forward Reverse Reverse Current Reverse Recovery Power 1 Reverse Voltage. Forward Voltage Current Current (uA) 150C Voltage Capacitance Time Dissipation Case : Type (walts) (volts) (mA) (nA) 28G (See Notes) (volts) (a sec) (mW) Style N457 70 1.0 20 025 5 60 _ _ 250 00-35 N457A 70 1.0 100 025 5 60 - _ 250 DO-35 } 57: 70 1.6 100 025 5 60 - - 300 DO-35 3N457M 80 1.0 20 02 5 60 _ _ 200 00-35 } 58 150 1.0 7 02: 125 _ _ 250 00-35 N458A 150 1.0 100 025 5 125 _ 250 0-35 N458AM 1 1.0 160 025 5 125 _ - 300 DO-35 N458M 175 1.0 7 025 5 125 _ _ 200 DO-35 59 200 1,0 3 025 5 175 _ _ 250 0-35 N459A 200 1.0 100 .025 5 175 - 50 50-35 : IN460A $0 1.0 15 _ 10 75 4.5 2.0 _ DO-35 .1N4608 90 1.0 50 _ 10 75 .0 2.0 _ 00-35 NAG1 30 1.0 15 0.5 30 25 _ ~ 250 00-7 N461A x 1.0 100 0.5 30 25 _ _- 250 bO-7 N461AM 30 1.0 100 0.5 30 25 _ _ 300 bO-7 R461M 30 1.0 15 0.5 30 25 _ _ 300 DO-7 62 70 0 5 0.5 30 60 ~ _ 250 00-7 N462A 70 0 100 0.5 30 60 _ 250 00-7 N462AM 70 0 100 0.5 30 60 _- _ 300 00-7 1N462M 70 a 5 0.5 30 60 _ _ 300 00-7 200 0 5 30 175 _ _ 250 00-7 N463A 200 0 100 . 175 _ , _ 250 DO-7 Na64 150 0 5 30 125 _ _ 250 00-7 N4G4A 150 0 100 5 30 125 _ _ 250 00-7 AN482 40 1 100 25 30 30 _ - 250 DO-7 N482A 40 0 100 025 15 30 _ _ 250 00-7 4828 40 0 100 025 5 30 _ _ 250 00-7 N4828M 40 0 100 025 5 30 _ _ 300 D0-7 26 36 0 100 025 30 - _ 300 00-7 N482M 40 11 100 +25 30 30 _ _ 300 DO-7 83 80 il 1 225 30 _ _ 250 00-7 483A 80 0 100 025 15 60 _ _ 250 00-7 N483AM 80 0 100 025 15 60 - _- 00-7 4838 80 0 100 025 5 _- _ 250 DO-7 N4836M 80 0 100 025 5 60 _ ~ 300 00-7 N4836 70 10 100 005 _ _ _ 300 D0-7 _1N483M 80 1.0 100 25 30 60 _ _~ 300 00-7 N484 150 11 100 225 30 125 _ _ 250 00-7 N484A 150 1.0 100 025 15 125 _ 250 00-7 N4848 150 10 100 025 5 125 - _ 250 D0-7 1N484 130 1.0 100 005 _ 125 _ _ 00-7 N485 200 11 100 125 30 175 _ _ 250 00-7 1N485A 200 1,0 100 025 15 175 _ _ 250 00-7 IN485B 200 1.0 100 025 5 175 _ _ 250 DO-7 85C 180 1,0 100 005 _ 175 _ _ 250 DO-7 86 250 11 100 25 50 225 _ _ 250 pO-7 IN486A 250 1.0 100 05 25 225 _ _ 250 00-7 1N4868 250 1.0 100 05 10 225 _ _ 250 DO-7 1N487 330 1,1 100 25 50 3 _ _ 250 00-7 1N487A 330 1.0 100 0.1 25 300 _ _ 250 b0-7 1N4878 300 1.0 100 025 10 300 _ _ _ bO-7 488 420 Ll 100 625 50 380 _ _ 250 DO-7 IN488A 420 1.6 100 01 25 380 ~ _ 250 D0-7 1N4888 380 1.0 100- 0.2 10 380 _ _ 250 00-7 ING19 30 1.0 3 08 26 (2) 10 - _ _ DO-7 625 35 1.5 4 1.0 30 20 _ 1.0 200 D0-7 IN625A 20 45 10 0.1 30 20. _ 0.5 200 BO0-7 N626 1.5 4 1.0 30 35 _ 1,0 200 00-7 1N626A 35 145 10 0.1 30 35 - 0.5 200 00-7 1N627 100 15 4 1.0 30 75 1.0 200 D0-7 IN627A. 75 1.5 10 02 30 75 _ 0.5 200 00-7 1N628 150 15 4 1.0 30 125 _ 1,0 200 00-7 IN629 200 15 4 1.0 30 175 _ 1.0 200 DO-7 1N643 200 1.0 10 025 (1) 10 _ 0.3 200 00-7 1N643A 200 1.0 100 025 5 (2) 10 _ _ D0-7 1N645 275 (2) 1.0 400 0.2 15 (2) 275 _ _ 400 DO-7 ING45A 225 1.0 4co 0.2 225 _ 600 80-7 4N646 360 (2) 1.0 400 0.2 15,(2) 360 _ _ 400 DO-7 1N647 480 (2) 1.0 400 0.2 20 (2) 480 - _ 400 00-7 1N648 600 (2) 1.0 400 0.2 20 (2) 600 _ _ 400 D0-7 IN649 720 (2) 1.0 400 0.2 25 (2) 720 _ _ 400 00-7 IN658 120 1.0 100 05 25 50 _ 0.3 200 00-7 INGSBA 120 1.0 100 025 10 50 _ 0.3 200 00-7 1N659 55 1.0 25 (2) 50 ~ 0.3 200 00-7 ING59A 1.0 10 05 50 50 0.3 200 D0-7 Hotes: (1) --125C (2) +100C 31semitPON semiconpuctors devices Semitronice Corp, TNTEX/ SEMITRONICS CORP ave yp ~~ Te O/-O/ Silicon diodes cont'a : Maximum Peak Maximum Forward Reverse Reverse Current Reverse Recovery Power + Reverse Voltage Forward Voltage Current Current (uA) 150C Voltage Capacitance Time Dissipation Case Type (volts) (volts) (mA) (aA) 25C (See Notes) (volts) (pf) {uz sec) (mW) Style N9O3A _ 10 20 0.1 10 (2) 40 _ 4 250 DO.7 N904 =_ 10 10 0.1 10 (2) 30 1.0 004 250 00.7 nr i3 eh NOOSA 30 1.0 20 0.1 10 (2) 20 1.0 004 250 DO.7 NSO6 - 1.0 10 0.1 10 (2) 20 2.5 004 250 DO.7 NOO6A - 1.0 20 0.1 10 2 20 2.5 004 250 00.7 8907 ~ 10 10 01 10 (2 30 25 004 250 DO.7 NOO7A 1.0 20 01 10 (2 30 2.5 004 250 00.7 1N808 - 10 10 0.2 10 (2) 40 2.5 004 250 00-7 INSOSA ~ 1.0 20 0.1 10 (2) 40 2.5 004 250 D0-7 NO14 100 1.0 10 025 20 4.0 4 250 DO-35 NOL4A 100 10 20 025 50 20 4.0 004 250 DO-35 NO14B 100 1.0 100 025 20 4.0 004 250 00-35 N915 50 16 50 025 5 (2) 10 4.0 Ol _ DO-35 NO1G 100 1,0 10 025 20 2.0 004 250 00,35 LNBIGA 100 10 20 025 50 20 2.0 4 250 DO-35 89168 75 1.0 025 50 20 2.0 004 250 DO-35 1917 30 1.0 10 05 10 - 0.3 250 00-35 N920 36 1.0 500 0.25 - 30 - 0.3 250 00-7 N21 70 1.0 500 0.25 - 60 _- 0.3 250 DO-7 4522 100. 1.0 500 0.25 - 90 - 0.3 250 00-7 4N923 130 1.0 500 0.25 120 i 0.3 250 DO-7 925 40 1.0 5 1.0 20 (2 10 4.0 15 250 D0-7 R926 40 1.0 5 0.1 10 (2 10 4.0 15 250 bO-7 18927 65 1.0 10 0.1 10 (2 10 4.0 15 250 DO-7 NS28 _ 1.0 10 0.1 10 (2) 10/100 _ 15 250 00-7 N929 20 1.0 20 109 - 25 _ _- 80 DO-7 - IN9390 5 50 1.0 20 100 _- 75 _ _ 80 DO-7 _ N83 . 100 1.0 20 100 _ 125 od _ _ DO-7 - INQ32 200 1.0 20 100 - 250 _ _ _ DO-7 R934 70 1.0 30 025 _ 60 _ 00-7 948 40 15 100 0.25 20 30 _ 1.0 250 BO-7 ~1N993, 8 15 10 1,0 _ 6 _ 50 DO-7 R997 35 1.0 10 03 5 12 ~ 0,15 DO-7 3062 75 @ 5SuA 10 20 0.1 100 50 1 002 250 DO-7 183063 | 75 0.85 10 0.1 100 50 2 004 250 DO-7 N3064 ~ 75 1.0 10 0.1 100 50 2 004 250 00-7 N3065, 75 1.0 20 0.1 100 50 15 250 00-7 4N3066 75 1.0 10 0.1 100 50 1 002 250 DO-7 1N3067 30 1.0 5 0.2 100 20 4 250 00-7 N3068 | 30 1.0 5 0.1 100 20 6 050 250 DO-7 N3069: 65 1.0 50 0.1 100 50 6 +050 250 BO-7 He070 200 1.0 100 0.1 100 175 5 050 250 00-7 1N307 200 10 100 0.1 100 150 5 060 a DO. 3123 40 1.5 10 0.1 10 (2) 40 0.8 004 - 00-7 3124 40 1.0 20 0.1 _ 40 2.0 004 DO-7 257 100 10 025 25 20/50 2 003 250 DO-7 N3258 100 1.0 100 025 25 20/50 4 004 250 00-7 N3550 180 1.0 500 - 200 (2) 180 15 _ 00-7 1N3596 20 1.0 30 0.1 100 20 1.0 004 - bO-7 1N3597 150 1,2 400 0.1 100 150 5.0 0.3 _- 00-7 1N3598 50 0.85 10 0.1 100 50 2.0 04 - 00-7 1N3599 150 1.0 100 0.1 100 150 5.0 .05 - DO-7 183600 50 1.0 200 O1 100 50 25 1004 250 BO-7 1N3602 75 1.0 lo 10 100 75 3.0 .005 _ 00-7 1N3602 75 1.0 20 0.1 ~ 50 3.0 005 _ 00-7 183604 75 1.0 50 .05 50 50 2 004 250 DO-7 IN3605 30 0.55 0.1 05 50 ~30 2 002 -_ DO0-7 IN3606 50 0,55 0.1 05 50 50 2 002 _ 00-7 1N3643 1000 5.0 250 5.0 _ 1000 _ _ 1000 A-83a - 183644 1500 5.0 250 5.0 _ 1500 _ _- 1000 A-83a 1N3645 - 2000 5.0 250 5.0 _ 2000 _ _ 1000 A-83a 1N3646 2500 5.0 250 5.0 _ 2500 _ - 1000 A-83a 1N3647 3000 5.0 250 5.0 _ 3000 - _- 1000 A-83a 668 30 1.0 5 - 10 (1) 15 1.0 0.15 _ 00-7 1N3731 100 10 100 05 50 0 2 003 250 bO-7 N3822 90 1.0 150 . _ 75 5.0 015 _ 00-7 1N3958 100 0.5 1.25 _ 400 100 _ 3.0 _ 00-4 1N3959 200 0.5 1.25 _ 400 200 - 3.0 - D0-4 1N3960 300 0.5 1.25 _ 400 300 _- 3.0 DO-4 2183961 400 0.5 1.25 _ 400 400 _ 3.0 _ D0-4 1N3962 500 0.5 1,25 - 400 500 _ 3.0 _ 00-4 4N3963 600 0.5 1, -_- 400 600 _ 3.0 _ 00-4 inag92 4000 5.0 250 _ ~ _ - 1000 A-83a Motes; (2) +100C (5) +50C =tma 32INTEX/. SEMITRONICS CORP evE D MM 48b5e4%b 0000308 7 mm Pen semitron hot line a TOLL FREE NUMBER 800-777-3960 silicon diodes cont'd discrete devices T-6/-0/ Maximum Peak Maximum Forward Reverse Reverse Current Reverse Capacitance Recovery Power Reverse Voltage Forward, Voltage Current Current 150 Voltage Of Time Dissipation Case Type (volts) (wolts) (mA) (uA) 25C (See Notes) (volts: {u sec) (mW) tyle 1N4009 35 1.0 30 0.1 100 25 4 004 250 00-7 1N4087 _ .700 min,/.750 max, 5 09 100 1.8 030 250 00-7 _ 975 max, 30 _ _ DO-7 iN4092 50 5 10 _ 10 10 - 250 0-7 . 5 (4) 20 _ 00-7 1N4147 30 1.0 30 5 _ 30 6.0 01 00-7 IN4148 100 1.0 10 025 50 20 4 - 400 DO-35 1N4149 100 1.0 10 025 50 20 2 - 400 D0-35 1N4150 50 -54 min,/.62 max, 1,0 O12 100 50 2.5 - 400 00-35 1N4151 75 1.0 05 50 50 2 _ 400 DO-35 1N4152 40 .490 min./.550 max, 0.1 05 50 30 2 400 DO-35 1N4153 75 .490 min./.550 max. 01 05 50 50 2 = 400 00-35 N4154 35 1.0 30 0.1 100 25 4 _ 400 0-35 1N4157 30 27 100 05 50 20 20 _ 400 A-159a 1N4242 40 1.0 10 0.1 100 (2) 20 2.0 002 _ M1178 1N4243 40 1.0 10 0.1 100 (2) 20 2.0 .002 M-117a 1N4305 50 0.85 10 0.1 100 50 2.0 .004 4 0-35 IN4306tt 50 0.55 O41 05 05 50 1.0 002 _ M117 1N4307++ 50 0.55 0.1 05 05 50 1.0 002 - M-118 1N4308 100 0.53 0,25 0.1 0.1 75 2.0 .002 _ DO-7 1N4376 20 141 50 0.1 0.1 10 10 .00075 D0-7 1N4389 5.0 1.0 2.0 100 5.0 _ DO-7 14390 20 1.0 5.0 0.2 2 5.0 1.0 .0005 D0-7 1N4391 20 1.0 2.0 0.2 2 G 5.0 1.0 0005 - 00-7 1N4392 15 1.0 2.0 1.0 20 (2) 5.0 1.0 0005 _ 00-7 1N4446 100 1.0 20 025 05 20 4.0 004 250 DO-7 1N4447 100 1.0 20 025 50 20 2.0 004 250 00-7 1N4448 100 1.0 100 025 50 20 4.0 1004 250 D0-7 1N4449 100 1.0 30 025 50 20 2.0 004 250 00-7 1N4450 40 1.0 200 05 50 30 4.0 .004 A-48bt 1N4451 40 10 300 05 20 6.0 01 A-48bt 1N4454 75 1.0 10 0.1 100 50 2.0 40 500 DO-35 1N4606 85 11 250 0.1 25 @ 100C 50 25 4.0 500 DO-35 multi ellet silicon signal diodes Be @ 28C Ve Co 5 BY Sax. Max. @ ov : @ SyA Max ter Package fant Number (Vv) (nA) @ Val) (Vv) @ ts(mA) {pt (nsec) Type aise- 30 50 20 1,58 10 25 _ D035 i. NSIS? 30 50 20 2.32 10 20 D035 2. 9neas3* 30 50 20 B00 10 30 _ 035 Li ENA82E, 30 100 20 ,830 10 35 po35 . 7. W3eae 6 30 100 20 1.61 10 25 D035 2 ANAKSO 30 100 20 2.35 10 20 D035 e. JN5I7S 30 50 20 3.20 10 20 DO35 HPOZOO 70 30 30 1.54 10 15 DO35 >. MPOROL = 50 50 20 1.57 10 15 _ 0035 "MeD292 De 50 90 20 1.60 10 15 ~ D035 Ps aapDo03.- - 50 90 20 1.51 10 15 = 0035 | STHSEY-" > 50 500 20 1.61 10 15 0035 7 MP0300 S100 30 30 2.33 10 10 _ D035 i APD 60 40 20 2.32 10 10 0035 j_ -MPpa02 - - 60 90 20 2.32 10 10 _ 0035 tease. 60 500 20 2.31 10 10 0035 | MPDAOY 2 120 30 30 3.07 10 7 _ D035 , MPbags -- 75 50 20 3.01 19 7 - 0035 _- -Mens02 75 90 20 3.01 10 7 - 0035 STOS69.- 75 500 20 3.01 10 7 _ 0035 33