AMPLIFIERS - DRIVER & GAIN BLOCK - CHIP
2
2 - 1
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
HMC633
GaAs PHEMT MMIC DRIVER
AMPLIFIER, 5 - 17 GHz
v02.0517
General Description
Features
Functional Diagram
The HMC633 is a GaAs MMIC PHEMT Driver
Amplier die which operates between 5 and 17 GHz.
The amplier provides up to 31 dB of gain, +30 dBm
Output IP3, and +23 dBm of output power at 1 dB
gain compression, while requiring 180 mA from a +5V
supply. The HMC633 is an ideal driver amplier for
microwave radio applications from 5 to 17 GHz, and
may also be biased at +5V, 130 mA to provide 2 dB
lower gain with improved PAE. The HMC633 amplier
I/O’s are DC blocked and internally matched to 50
Ohms facilitating easy integration into Multi-Chip-
Modules (MCMs). All data is taken with die connected
at input and output RF ports via one 1 mil wedge bond
with minimal length of 0.31 mm (12 mils).
Gain: 29 dB
P1dB: +23 dBm
Output IP3: +30 dBm
Saturated Power: +24 dBm @ 27% PAE
Supply Voltage: +5V @ 180 mA
50 Ohm Matched Input/Output
Die Size: 2.07 x 0.93 x 0.1 mm
Electrical Specications, TA = +25° C, Vdd1, Vdd2, Vdd3, Vdd4 = 5V, Idd = 180 mA[1]
Typical Applications
The HMC633 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• LO Driver for Mixers
• Military & Space
Parameter Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 5 - 9 9 - 17 GHz
Gain 27 31 26 29 dB
Gain Variation Over Temperature 0.035 0.044 0.040 0.050 dB/ °C
Input Return Loss 14 16 dB
Output Return Loss 15 12 dB
Output Power for 1 dB Compression (P1dB) 21 23 21 23 dBm
Saturated Output Power (Psat) 24 23.5 dBm
Output Third Order Intercept (IP3) 30 30 dBm
Noise Figure 9 7 dB
Supply Current (Idd= Idd1 + Idd2 + Idd3 + Idd4) 180 180 mA
[1] Adjust Vgg between -2 to 0V to achieve Idd = 180mA Typical
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
AMPLIFIERS - DRIVER & GAIN BLOCK - CHIP
2
2 - 2
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Input Return Loss vs. Temperature Output Return Loss vs. Temperature
Broadband Gain & Return Loss Gain vs. Temperature
P1dB vs. Temperature Psat vs. Temperature
HMC633
v02.0517 GaAs PHEMT MMIC DRIVER
AMPLIFIER, 5 - 17 GHz
-30
-20
-10
0
10
20
30
40
2 4 6 8 10 12 14 16 18 20
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
14
16
18
20
22
24
26
28
30
4 6 8 10 12 14 16 18 20
+25 C
+85 C
-55 C
P1dB (dBm)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
2 4 6 8 10 12 14 16 18 20
+25 C
+85 C
-55 C
RETURN LOSS (dB)
FREQUENCY (GHz)
14
16
18
20
22
24
26
28
30
4 6 8 10 12 14 16 18 20
+25 C
+85 C
-55 C
Psat (dBm)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
2 4 6 8 10 12 14 16 18 20
+25 C
+85 C
-55 C
RETURN LOSS (dB)
FREQUENCY (GHz)
0
5
10
15
20
25
30
35
40
2 4 6 8 10 12 14 16 18 20
+25C
+85 C
-55 C
GAIN (dB)
FREQUENCY (GHz)
AMPLIFIERS - DRIVER & GAIN BLOCK - CHIP
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For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Power Compression @ 10 GHz
Output IP3 vs. Temperature @ Pin = -15 dBm Noise Figure vs. Temperature
Gain & Power vs. Supply Voltage @ 10 GHz Reverse Isolation vs. Temperature
Power Compression @ 17 GHz
HMC633
v02.0517 GaAs PHEMT MMIC DRIVER
AMPLIFIER, 5 - 17 GHz
0
3
6
9
12
15
18
21
24
27
30
33
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
16
20
24
28
32
4.5 4.7 4.9 5.1 5.3 5.5
Gain
P1dB
Psat
GAIN (dB), P1dB (d
Bm), Psat (dBm)
Vdd (V)
16
20
24
28
32
36
2 4 6 8 10 12 14 16 18 20
+25 C
+85 C
-55 C
IP3 (dBm)
FREQUENCY (GHz)
-100
-80
-60
-40
-20
0
2 4 6 8 10 12 14 16 18 20
+25 C
+85 C
-55 C
ISOLATION (dB)
FREQUENCY (GHz)
0
4
8
12
16
20
2 4 6 8 10 12 14 16 18 20
+25 C
+85 C
-55 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
0
3
6
9
12
15
18
21
24
27
30
33
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
AMPLIFIERS - DRIVER & GAIN BLOCK - CHIP
2
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For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Absolute Maximum Ratings
Drain Bias Voltage
(Vdd1, Vdd2, Vdd3, Vdd4) +5.5 Vdc
Gate Bias Voltage (Vgg) -3 to 0 Vdc
RF Input Power (RFIN)(Vdd = +5 Vdc) +5 dBm
Channel Temperature 175 °C
Continuous Pdiss (T= 85 °C)
(derate 11.76 mW/°C above 85 °C) 1.06 W
Thermal Resistance
(channel to die bottom) 85 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
Vdd (V) Idd (mA)
4.5 178
5.0 180
5.5 183
Note: Amplier will operate over full voltage ranges shown above
Typical Supply Current vs. Vdd
Gain, Power & Output IP3
vs. Gate Voltage @ 10 GHz
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC633
v02.0517 GaAs PHEMT MMIC DRIVER
AMPLIFIER, 5 - 17 GHz
15
20
25
30
35
0
30
60
90
120
150
180
210
240
-0.8 -0.77 -0.75 -0.73 -0.7 -0.67 -0.65
Gain
P1dB
Psat
OIP3
Idd
GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
Idd (mA)
Vgg (V)
AMPLIFIERS - DRIVER & GAIN BLOCK - CHIP
2
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For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
Die Packaging Information [1]
Standard Alternate
GP-2 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
HMC633
v02.0517 GaAs PHEMT MMIC DRIVER
AMPLIFIER, 5 - 17 GHz
AMPLIFIERS - DRIVER & GAIN BLOCK - CHIP
2
2 - 6
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Pad Descriptions
Pad Number Function Description Interface Schematic
1RFIN This pad is AC coupled
and matched to 50 Ohms.
2, 3, 4, 5 Vdd1, Vdd2, Vdd3,
Vdd4
Power Supply Voltage for the amplier. See assembly
diagram for required external components.
6RFOUT This pad is AC coupled
and matched to 50 Ohms.
7Vgg
Gate control for amplier, please follow “MMIC Ampli-
er Biasing Procedure” Application Note. See assembly
diagram for required external components.
Die Bottom GND Die bottom must be connected to RF/DC ground.
HMC633
v02.0517 GaAs PHEMT MMIC DRIVER
AMPLIFIER, 5 - 17 GHz
AMPLIFIERS - DRIVER & GAIN BLOCK - CHIP
2
2 - 7
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Assembly Diagram
HMC633
v02.0517 GaAs PHEMT MMIC DRIVER
AMPLIFIER, 5 - 17 GHz
AMPLIFIERS - DRIVER & GAIN BLOCK - CHIP
2
2 - 8
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin lm substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin lm substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should brought as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-
up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom-
mended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
0.102mm (0.004”) Thick GaAs MMIC
Ribbon Bond
0.076mm
(0.003”)
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Ribbon Bond
0.076mm
(0.003”)
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010” Thick Alumina
Thin Film Substrate
Figure 2.
HMC633
v02.0517 GaAs PHEMT MMIC DRIVER
AMPLIFIER, 5 - 17 GHz
