AO4612 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel VDS (V) = 60V ID = 4.5A (VGS=10V) RDS(ON) < 56m (VGS=10V) < 77m (VGS=4.5V) The AO4612 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard product AO4612 is Pb-free (meets ROHS & Sony 259 specifications). AO4612L is a Green Product ordering option. AO4612 and AO4612L are electrically identical. p-channel -60V -3.2A (VGS = -10V) RDS(ON) < 105m (VGS = -10V) < 135m (VGS = -4.5V) D1 D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 G2 S1 S2 SOIC-8 p-channel n-channel Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 60 VGS Gate-Source Voltage Continuous Drain Current A TA=70C TA=25C Power Dissipation 20 20 4.5 -3.2 ID 3.6 -2.6 IDM 20 -20 TA=25C Pulsed Drain Current B TA=70C A 2 2 1.28 -55 to 150 -55 to 150 Symbol RJA RJL RJA RJL Device n-ch n-ch n-ch Typ 48 74 35 p-ch p-ch p-ch 48 74 35 Units V V 1.28 PD TJ, TSTG Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C A t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. Max p-channel -60 W C Max Units 62.5 C/W 110 C/W 60 C/W 62.5 110 40 C/W C/W C/W AO4612 N Channel Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250A, VGS=0V VDS=48V, VGS=0V 60 IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS= 20V VDS=VGS ID=250A ID(ON) On state drain current VGS=10V, VDS=5V VGS=10V, ID=4.5A RDS(ON) gFS VSD IS tr tD(off) tf trr Qrr TJ=125C Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=30V, ID=4.5A VGS=10V, VDS=30V, RL=6.7, RGEN=3 IF=4.5A, dI/dt=100A/s Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=100A/s Units V A 100 nA 2.1 3 V 46 79 56 64 77 m 1 3 S V A 20 VGS=4.5V, ID=3A Forward Transconductance VDS=5V, ID=4.5A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) 1 Max 1 5 TJ=55C Static Drain-Source On-Resistance DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Typ A 11 0.74 m 450 60 25 1.65 540 2 pF pF pF 8.5 10.5 nC 4.3 5.5 nC 1.6 2.2 4.7 2.3 15.7 1.9 27.5 32 nC nC 7 4.5 24 4 35 ns ns ns ns ns nC 2 A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev2: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO4612 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 20 15 10V 10 4.5V 125C ID(A) ID (A) VDS=5V 5.0V 15 10 4.0V 5 5 25C VGS=3.5V 0 0 1 2 3 4 0 5 2 2.5 VDS (Volts) Fig 1: On-Region Characteristics 4 4.5 5 2 Normalized On-Resistance 90 80 VGS=4.5V 70 60 50 VGS=10V 40 30 20 VGS=10V ID=4.5A 1.8 1.6 VGS=4.5V ID=3.0A 1.4 1.2 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 140 1.0E+01 ID=4.5A 1.0E+00 120 125C 1.0E-01 100 IS (A) RDS(ON) (m) 3.5 VGS(Volts) Figure 2: Transfer Characteristics 100 RDS(ON) (m) 3 125C 80 1.0E-02 25C 1.0E-03 25C 60 1.0E-04 1.0E-05 40 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4612 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 800 10 VDS=30V ID= 4.5A Capacitance (pF) VGS (Volts) 8 6 4 2 600 Ciss 400 Coss 200 Crss 0 0 0 10 0 10 Qg (nC) Figure 7: Gate-Charge Characteristics 40 10s 100s 10.0 10ms 1ms 1s 1.0 10s TJ(Max)=150C TA=25C 50 60 TJ(Max)=150C TA=25C 0.1s 20 10 DC 0 0.001 0.1 1 10 100 VDS (Volts) D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZJA Normalized Transient Thermal Resistance 40 30 Power (W) ID (Amps) RDS(ON) limited 10 30 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 0.1 20 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AO4612 P-Channel Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250A, VGS=0V VDS=-48V, VGS=0V -60 IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=20V VDS=VGS ID=-250A ID(ON) On state drain current VGS=-10V, VDS=-5V VGS=-10V, ID=-3.2A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance -1 TJ=125C VGS=0V, VDS=-30V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Gate Source Charge Qgd tD(on) Gate Drain Charge Turn-On DelayTime tr tD(off) tf trr Qrr Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time VGS=-10V, VDS=-30V, ID=-3.2A VGS=-10V, VDS=-30V, RL=9.4, RGEN=3 IF=-3.2A, dI/dt=100A/s Body Diode Reverse Recovery Charge IF=-3.2A, dI/dt=100A/s Body Diode Reverse Recovery Time Units V A 100 nA -2.1 -3 V 84 145 105 106 135 m -1 -3 S V A -20 VGS=-4.5V, ID=-2.8A Forward Transconductance VDS=-5V, ID=-3.2A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Output Capacitance Reverse Transfer Capacitance Gate resistance Max -1 -5 TJ=55C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Typ A 9 -0.73 m 930 85 35 7.2 1120 9 pF pF pF 16 20 nC 8 10 nC 2.5 3.2 8 3.8 31.5 7.5 27 32 nC nC 12 7.5 48 15 35 ns ns ns ns ns nC A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given givenapplication applicationdepends dependson onthe theuser's user'sspecific specificboard boarddesign. design.The Thecurrent currentrating ratingisisbased basedon onthe thett10s 10sthermal thermalresistance resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev2: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. Rev2: August 2005 AO4612 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 30 20 -10V -4.5V 15 -4.0V 20 -ID(A) -ID (A) VDS=-5V 25 10 -3.5V 15 10 5 125C 5 VGS=-3.0V 25C 0 0 1 2 3 4 0 5 1 1.5 -VDS (Volts) Fig 1: On-Region Characteristics 3 3.5 4 Normalized On-Resistance 2 120 RDS(ON) (m) 2.5 -VGS(Volts) Figure 2: Transfer Characteristics 130 VGS=-4.5V 110 100 90 VGS=-10V 80 ID=-3.2A 1.8 VGS=-10V 1.6 1.4 VGS=-4.5V ID=-2.8A 1.2 1 0.8 70 0 2 4 6 8 0 10 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 1.0E+01 180 1.0E+00 ID=-3.2 160 1.0E-01 125C 140 125C 1.0E-02 -IS (A) RDS(ON) (m) 2 120 1.0E-03 100 1.0E-04 80 25C 60 2 3 4 25C 1.0E-05 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 1.0E-06 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4612 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 1400 10 Capacitance (pF) -VGS (Volts) 1200 VDS=-30V ID=-3.2A 8 6 4 Ciss 1000 800 600 400 Coss 2 0 0 0 4 8 12 16 20 0 100.0 1ms 0.1s 10ms 1s 40 50 60 TJ(Max)=150C TA=25C 20 10 10s DC 0.1 0.1 30 30 100s Power (W) RDS(ON) limited 1.0 20 40 TJ(Max)=150C, TA=25C 10.0 10 -VDS (Volts) Figure 8: Capacitance Characteristics -Qg (nC) Figure 7: Gate-Charge Characteristics -ID (Amps) Crss 200 1 10 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) ZJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 0.01 100 1000