Symbol Max p-channel Units
VDS V
VGS V
IDM
TJ, TSTG °C
Symbol Device Typ Max Units
n-ch 48 62.5 °C/W
n-ch 74 110 °C/W
RθJL n-ch 35 60 °C/W
p-ch 48 62.5 °C/W
p-ch 74 110 °C/W
RθJL p-ch 35 40 °C/W
Maximum Junction-to-Lead CSteady-State
Maximum Junction-to-Ambient At ≤ 10s RθJA
Maximum Junction-to-Ambient ASteady-State
-20
TA=70°CPower Dissipation
TA=25°C PD
Steady-State
Junction and Storage Temperature Range
A
Continuous Drain
Current A
TA=25°C
ID
TA=70°C
Pulsed Drain Current B
W
4.5
3.6
20
2
1.28
-2.6
-3.2
2
1.28
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter Max n-channel
60 -60
±20
Drain-Source Voltage
±20Gate-Source Voltage
Thermal Characteristics: n-channel and p-channel
-55 to 150-55 to 150
Maximum Junction-to-Lead CSteady-State
Parameter
Maximum Junction-to-Ambient At ≤ 10s RθJA
Maximum Junction-to-Ambient A
AO4612
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
VDS (V) = 60V -60V
ID = 4.5A (VGS=10V) -3.2A (VGS = -10V)
RDS(ON) RDS(ON)
< 56mΩ (VGS=10V) < 105mΩ (VGS = -10V)
< 77mΩ (VGS=4.5V) < 135mΩ (VGS = -4.5V)
General Description
The AO4612 uses advanced trench
technology MOSFETs to provide excellen
t
RDS(ON) and low gate charge. The
complementary MOSFETs may be used
in H-bridge, Inverters and other
applications. Standard product AO4612 is
Pb-free (meets ROHS & Sony 259
specifications). AO4612L is a Green
Product ordering option. AO4612 and
A
O4612L are electrically identical.
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
SOIC-8
G2
D2
S2 G1
D1
S1
n-channel p-channel
Alpha & Omega Semiconductor, Ltd.
AO4612
Symbol Min Typ Max Units
BVDSS 60 V
1
TJ=55°C 5
IGSS 100 nA
VGS(th) 1 2.1 3 V
ID(ON) 20 A
46 56
TJ=125°C 79
64 77 mΩ
gFS 11 S
VSD 0.74 1 V
IS3A
Ciss 450 540 pF
Coss 60 pF
Crss 25 pF
Rg1.65 2 Ω
Qg(10V) 8.5 10.5 nC
Qg(4.5V) 4.3 5.5 nC
Qgs 1.6 nC
Qgd 2.2 nC
tD(on) 4.7 7 ns
tr2.3 4.5 ns
tD(off) 15.7 24 ns
tf1.9 4 ns
trr 27.5 35 ns
Qrr 32 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Body Diode Reverse Recovery Charge
Total Gate Charge
IF=4.5A, dI/dt=100A/µs
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=4.5A, dI/dt=100A/µs
Input Capacitance
N Channel Electrical Characteristics (T
J=25°C unless otherwise noted)
Parameter Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current VDS=48V, VGS=0V µA
Gate-Body leakage current VDS=0V, VGS= ±20V
Gate Threshold Voltage VDS=VGS ID=250µA
On state drain current VGS=10V, VDS=5V
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
mΩ
VGS=4.5V, ID=3A
VDS=5V, ID=4.5A
IS=1A,VGS=0V
VGS=10V, ID=4.5A
Diode Forward Voltage
VGS=10V, VDS=30V, RL=6.7Ω,
RGEN=3Ω
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Total Gate Charge
VGS=10V, VDS=30V, ID=4.5A
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Reverse Transfer Capacitance
Gate resistance
Output Capacitance
A: The value of R θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R
θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The SOA
curve provides a single pulse rating.
Rev2: August 2005
Alpha & Omega Semiconductor, Ltd.
AO4612
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
0
5
10
15
20
012345
VDS (Volts)
Fig 1: On-Region Characteristics
ID (A)
VGS=3.5V
4.0V
10V
5.0V
4.5V
0
5
10
15
2 2.5 3 3.5 4 4.5 5
VGS(Volts)
Figure 2: Transfer Characteristics
ID(A)
20
30
40
50
60
70
80
90
100
0 5 10 15 20
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON) (mΩ)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
IS (A)
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
2
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Normalized On-Resistance
VGS=10V
VGS=4.5V
ID=3.0A
ID=4.5A
40
60
80
100
120
140
246810
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON) (mΩ)
25°C
125°C
VDS=5V
VGS=4.5V
VGS=10V
ID=4.5A
25°C
125°C
Alpha & Omega Semiconductor, Ltd.
AO4612
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
0
2
4
6
8
10
010
Qg (nC)
Figure 7: Gate-Charge Characteristics
VGS (Volts)
0
200
400
600
800
0 102030405060
VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
Ciss
0
10
20
30
40
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
ZθJA Normalized Transient
Thermal Resistance
Coss
Crss
0.1
1.0
10.0
100.0
0.1 1 10 100
VDS (Volts)
ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
µ
s
10ms 1ms
0.1s
1s
10s
DC
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
VDS=30V
ID= 4.5A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
Ton T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
10
µ
s
Alpha & Omega Semiconductor, Ltd.
AO4612
Symbol Min Typ Max Units
BVDSS -60 V
-1
TJ=55°C -5
IGSS ±100 nA
VGS(th) -1 -2.1 -3 V
ID(ON) -20 A
84 105
TJ=125°C 145
106 135 mΩ
gFS 9S
VSD -0.73 -1 V
IS-3 A
Ciss 930 1120 pF
Coss 85 pF
Crss 35 pF
Rg7.2 9 Ω
Qg(10V) 16 20 nC
Qg(4.5V) 810nC
Qgs 2.5 nC
Qgd 3.2 nC
tD(on) 812ns
tr3.8 7.5 ns
tD(off) 31.5 48 ns
tf7.5 15 ns
trr 27 35 ns
Qrr 32 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE Rev2: August 2005
Body Diode Reverse Recovery Time IF=-3.2A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=-3.2A, dI/dt=100A/µs
Turn-On DelayTime
VGS=-10V, VDS=-30V, RL=9.4Ω,
RGEN=3Ω
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
SWITCHING PARAMETERS
Total Gate Charge (10V)
VGS=-10V, VDS=-30V, ID=-3.2A
Reverse Transfer Capacitance
Gate resistance
DYNAMIC PARAMETERS
Input Capacitance
VGS=0V, VDS=-30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Diode Forward Voltage IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
Output Capacitance
VDS=-5V, ID=-3.2A
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
VGS=-10V, ID=-3.2A mΩ
VGS=-4.5V, ID=-2.8A
Gate Threshold Voltage VDS=VGS ID=-250µA
On state drain current VGS=-10V, VDS=-5V
µA
Gate-Body leakage current VDS=0V, VGS=±20V
Drain-Source Breakdown Voltage ID=-250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current VDS=-48V, VGS=0V
P-Channel Electrical Characteristics (T
J=25°C unless otherwise noted)
Parameter Conditions
STATIC PARAMETERS
A: The value of R θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R
θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
SOA curve provides a single pulse rating. Rev2: August 2005
A: The value of R θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R
θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO4612
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
0
5
10
15
20
012345
-VDS (Volts)
Fig 1: On-Region Characteristics
-ID (A)
VGS=-3.0V
-3.5V
-4.5V
-10V
-4.0V
0
5
10
15
20
25
30
1 1.5 2 2.5 3 3.5 4
-VGS(Volts)
Figure 2: Transfer Characteristics
-ID(A)
70
80
90
100
110
120
130
0246810
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON) (mΩ)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
-IS (A)
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
2
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Normalized On-Resistance
VGS=-10V
VGS=-4.5V
60
80
100
120
140
160
180
200
2345678910
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON) (mΩ)
25°C
125°C
VDS=-5V
VGS=-4.5V
VGS=-10V
ID=-3.2
25°C
125°C
ID=-3.2A
ID=-2.8A
Alpha & Omega Semiconductor, Ltd.
AO4612
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
0
2
4
6
8
10
0 4 8 12 16 20
-Qg (nC)
Figure 7: Gate-Charge Characteristics
-VGS (Volts)
0
200
400
600
800
1000
1200
1400
0 102030405060
-VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
Ciss
0
10
20
30
40
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
ZθJA Normalized Transient
Thermal Resistance
Coss Crss
0.1
1.0
10.0
100.0
0.1 1 10 100
-VDS (Volts)
-ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
µ
s
10ms
1ms
0.1s
1s
10s DC
RDS(ON)
limited
TJ
(
Max
)
=150°C, T
A
=25°C
VDS=-30V
ID=-3.2A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
Ton T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
Alpha & Omega Semiconductor, Ltd.
