ZXM62P03E6 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits ID RDS(on) TA = +25C 0.15 @ VGS = -10V -2.6A 0.23 @ VGS = -4.5V -1.5A -30V Fast Switching Speed Low On-Resistance Low Threshold Low Gate Drive Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for high-efficiency power management applications. Applications Mechanical Data DC-DC Converters Power Management Functions Disconnect Switches Motor Control Case: SOT-26 Case Material: Molded Plastic; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish; Solderable per MIL-STD-202, Method 208 Weight: 0.015 grams (Approximate) D SOT-26 G S Equivalent Circuit Top View Pin Out - Top View Ordering Information (Note 4) Product Marking 2P03 2P03 ZXM62P03E6TA ZXM62P03E6TC Notes: Reel size (inches) 7 13 Tape width (mm) 8 8 Quantity per reel 3,000 Units 10,000 Units 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT-26 Date Code Key Year Code Month Code 2015 C Jan 1 2016 D Feb 2 ZXM62P03E6 Document Number: DS33483 Rev. 3 - 2 Mar 3 YM 2P03 2P03 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: C = 2015) M or M = Month (ex: 9 = September) 2017 E Apr 4 2018 F May 5 Jun 6 1 of 7 www.diodes.com 2019 G Jul 7 2020 H Aug 8 Sep 9 2021 I Oct O 2022 J Nov N Dec D March 2015 (c) Diodes Incorporated ZXM62P03E6 Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol VDSS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS = -4.5V TA = +25C (Note 5) TA = +70C (Note 5) ID Pulsed Drain Current (Note 7) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) IDM IS ISM Value -30 20 -1.5 -1.2 -7.4 -0.54 -7.4 Units V V Value 625 5 806 6.4 113 73 -55 to +150 Unit mW mW/C mW mW/C C/W C/W C A A A A Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Power Dissipation (Note 5) Linear Derating Factor Power Dissipation (Note 6) Linear Derating Factor Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Notes: Symbol PD PD RJA RJA TJ, TSTG 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions 6. For a device surface mounted on FR4 PCB measured at t 5 seconds. 7. Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 -1 100 V A nA ID = -250A, VGS = 0V VDS = -30V, VGS = 0V VGS = 20V, VDS = 0V VGS(th) -1 V Static Drain-Source On-Resistance (Note 8) RDS (ON) Forward Transconductance (Notes 8 & 10) Diode Forward Voltage (Note 8) Reverse Recovery Time (Note 10) Reverse Recovery Charge (Note 10) DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time (Note 9) Turn-On Rise Time (Note 9) Turn-Off Delay Time (Note 9) Turn-Off Fall Time (Note 9) Total Gate Charge (Note 9) Gate-Source Charge (Note 9) Gate-Drain Charge (Note 9) gfs VSD trr Qrr 1.1 19.9 13 0.15 0.23 -0.95 ID = -250A, VDS = VGS VGS = -10V, ID = -1.6A VGS = -4.5V, ID = -0.8A VDS = -10V, ID = -0.8A TJ = +25C, IS = -1.6A, VGS = 0V TJ = +25C, IF = -1.6A, di/dt = 100A/s Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd 330 120 45 2.8 6.4 13.9 10.3 10.2 1.5 3 Notes: S V ns nC Test Condition pF VDS = -25V, VGS = 0V f = 1.0MHz ns VDD = -15V, ID = -1.6A, RG 6.2 RD 25 nC VDS = -24V, VGS = -10V, ID = -1.6A 8. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. 9. Switching characteristics are independent of operating junction temperature. 10. For design aid only, not subject to production testing. ZXM62P03E6 Document Number: DS33483 Rev. 3 - 2 2 of 7 www.diodes.com March 2015 (c) Diodes Incorporated ZXM62P03E6 Typical Characteristics ZXM62P03E6 Document Number: DS33483 Rev. 3 - 2 3 of 7 www.diodes.com March 2015 (c) Diodes Incorporated ZXM62P03E6 Typical Characteristics (cont.) Thermal Characteristics ZXM62P03E6 Document Number: DS33483 Rev. 3 - 2 4 of 7 www.diodes.com March 2015 (c) Diodes Incorporated ZXM62P03E6 Test Circuits ZXM62P03E6 Document Number: DS33483 Rev. 3 - 2 5 of 7 www.diodes.com March 2015 (c) Diodes Incorporated ZXM62P03E6 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. D E1 SOT26 Dim Min Max Typ A1 0.013 0.10 0.05 A2 1.00 1.30 1.10 A3 0.70 0.80 0.75 b 0.35 0.50 0.38 c 0.10 0.20 0.15 D 2.90 3.10 3.00 e 0.95 e1 1.90 E 2.70 3.00 2.80 E1 1.50 1.70 1.60 L 0.35 0.55 0.40 a 8 a1 7 All Dimensions in mm E b a1 e1 A2 A3 A1 Seating Plane e c L a Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C1 Y1 G Dimensions Value (in mm) C 2.40 C1 0.95 G 1.60 X 0.55 Y 0.80 Y1 3.20 C Y X ZXM62P03E6 Document Number: DS33483 Rev. 3 - 2 6 of 7 www.diodes.com March 2015 (c) Diodes Incorporated ZXM62P03E6 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2015, Diodes Incorporated www.diodes.com ZXM62P03E6 Document Number: DS33483 Rev. 3 - 2 7 of 7 www.diodes.com March 2015 (c) Diodes Incorporated