ZXM62P03E6
Document Number: DS33483 Rev. 3 - 2
1 of 7
www.diodes.com
March 2015
© Diodes Incorporated
ZXM62P03E6
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
RDS(on)
ID
TA = +25°C
-30V
0.15Ω @ VGS = -10V
-2.6A
0.23Ω @ VGS = -4.5V
-1.5A
Description
This MOSFET utilizes a unique structure that combines the benefits
of low on-resistance with fast switching speed, making it ideal for
high-efficiency power management applications.
Applications
DC-DC Converters
Power Management Functions
Disconnect Switches
Motor Control
Features and Benefits
Fast Switching Speed
Low On-Resistance
Low Threshold
Low Gate Drive
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT-26
Case Material: Molded Plastic; UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish; Solderable per MIL-STD-202,
Method 208
Weight: 0.015 grams (Approximate)
Ordering Information (Note 4)
Product
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
ZXM62P03E6TA
2P03
7
8
3,000 Units
ZXM62P03E6TC
2P03
13
8
10,000 Units
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2015
2016
2017
2018
2019
2020
2021
2022
Code
C
D
E
F
G
H
I
J
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Equivalent Circuit
D
S
G
Pin Out - Top
View
SOT-26
Top View
2P03 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M or M = Month (ex: 9 = September)
2P03
Y
M
SOT-26
ZXM62P03E6
Document Number: DS33483 Rev. 3 - 2
2 of 7
www.diodes.com
March 2015
© Diodes Incorporated
ZXM62P03E6
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
VGS = -4.5V
TA = +25°C (Note 5)
TA = +70°C (Note 5)
ID
-1.5
-1.2
A
Pulsed Drain Current (Note 7)
IDM
-7.4
A
Continuous Source Current (Body Diode)
IS
-0.54
A
Pulsed Source Current (Body Diode)
ISM
-7.4
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 5)
Linear Derating Factor
PD
625
5
mW
mW/°C
Power Dissipation (Note 6)
Linear Derating Factor
PD
806
6.4
mW
mW/°C
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
113
°C/W
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
73
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
6. For a device surface mounted on FR4 PCB measured at t ≤5 seconds.
7. Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
-30
V
ID = -250μA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS
-1
μA
VDS = -30V, VGS = 0V
Gate-Source Leakage
IGSS
±100
nA
VGS = 20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
-1
V
ID = -250μA, VDS = VGS
Static Drain-Source On-Resistance (Note 8)
RDS (ON)
0.15
Ω
VGS = -10V, ID = -1.6A
0.23
VGS = -4.5V, ID = -0.8A
Forward Transconductance (Notes 8 & 10)
gfs
1.1
S
VDS = -10V, ID = -0.8A
Diode Forward Voltage (Note 8)
VSD
-0.95
V
TJ = +25°C, IS = -1.6A, VGS = 0V
Reverse Recovery Time (Note 10)
trr
19.9
ns
TJ = +25°C, IF = -1.6A,
di/dt = 100A/μs
Reverse Recovery Charge (Note 10)
Qrr
13
nC
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Ciss
330
pF
VDS = -25V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
120
Reverse Transfer Capacitance
Crss
45
Turn-On Delay Time (Note 9)
td(on)
2.8
ns
VDD = -15V, ID = -1.6A,
RG 6.2Ω RD 25Ω
Turn-On Rise Time (Note 9)
tr
6.4
Turn-Off Delay Time (Note 9)
td(off)
13.9
Turn-Off Fall Time (Note 9)
tf
10.3
Total Gate Charge (Note 9)
Qg
10.2
nC
VDS = -24V, VGS = -10V,
ID = -1.6A
Gate-Source Charge (Note 9)
Qgs
1.5
Gate-Drain Charge (Note 9)
Qgd
3
Notes: 8. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
9. Switching characteristics are independent of operating junction temperature.
10. For design aid only, not subject to production testing.
ZXM62P03E6
Document Number: DS33483 Rev. 3 - 2
6 of 7
www.diodes.com
March 2015
© Diodes Incorporated
ZXM62P03E6
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
a1
D
e
E1 E
b
A2 A1
Seating Plane
L
c
a
e1
A3
SOT26
Dim
Min
Max
Typ
A1
0.013
0.10
0.05
A2
1.00
1.30
1.10
A3
0.70
0.80
0.75
b
0.35
0.50
0.38
c
0.10
0.20
0.15
D
2.90
3.10
3.00
e
-
-
0.95
e1
-
-
1.90
E
2.70
3.00
2.80
E1
1.50
1.70
1.60
L
0.35
0.55
0.40
a
-
-
8°
a1
-
-
7°
All Dimensions in mm
Dimensions
Value (in mm)
C
2.40
C1
0.95
G
1.60
X
0.55
Y
0.80
Y1
3.20
C1
Y1 G
X
Y
C
ZXM62P03E6
Document Number: DS33483 Rev. 3 - 2
7 of 7
www.diodes.com
March 2015
© Diodes Incorporated
ZXM62P03E6
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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