August 1998
NDT3055L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features
Absolute Maximum Ratings TA = 25oC unless otherwise noted
Symbol Parameter NDT3055L Units
VDSS Drain-Source Voltage 60 V
VGSS Gate-Source Voltage - Continuous ±20 V
IDMaximum Drain Current - Continuous (Note 1a) 4A
- Pulsed 25
PDMaximum Power Dissipation (Note 1a)3W
(Note 1b) 1.3
(Note 1c)1.1
TJ,TSTG Operating and Storage Temperature Range -65 to 150 °C
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 12 °C/W
* Order option J23Z for cropped center drain lead.
NDT3055L Rev.A1
4 A, 60 V. RDS(ON) = 0.100 @ VGS = 10 V,
RDS(ON) = 0.120 @ VGS = 4.5 V.
Low drive requirements allowing operation directly from logic
drivers. VGS(TH) < 2V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
SOIC-16
SuperSOTTM-3 SuperSOTTM-8 SO-8 SOT-223
SuperSOTTM-6
These logic level N-Channel enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance and provide superior
switching performance, and withstand high energy pulse
in the avalanche and commutation modes. These devices
are particularly suited for low voltage applications such as
DC motor control and DC/DC conversion where fast
switching, low in-line power loss, and resistance to
transients are needed.
D
DS
G
D
S
G
G
D
S
D
SOT-223 G
D
S
SOT-223*
(J23Z)
© 1998 Fairchild Semiconductor Corporation
Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 60 V
BVDSS/TJBreakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 o C55 mV/o C
IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V 1µA
TJ =125°C 50 µA
IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA
ON CHARACTERISTICS (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 11.6 2V
VGS(th)/TJGate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC-4 mV /oC
RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 4 A0.07 0.1
TJ =125°C 0.125 0.18
VGS = 4.5 V, ID = 3.7 A0.103 0.12
ID(ON) On-State Drain Current VGS = 5 , VDS = 10 V 10 A
gFS Forward Transconductance VDS = 5 V, ID = 4 A 7S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 25, VGS = 0 V,
f = 1.0 MHz 345 pF
Coss Output Capacitance 110 pF
Crss Reverse Transfer Capacitance 30 pF
SWITCHING CHARACTERISTICS (Note 2)
tD(on)Turn - On Delay Time VDD = 25, ID = 1 A,
VGS = 10 V, RGEN = 6 5 20 ns
trTurn - On Rise Time 7.5 20 ns
tD(off) Turn - Off Delay Time 20 50 ns
tfTurn - Off Fall Time 7 20 ns
QgTotal Gate Charge VDS = 40 V, ID = 4 A,
VGS = 10 V 13 20 nC
Qgs Gate-Source Charge 1.7 nC
Qgd Gate-Drain Charge 3.2 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
ISMaximum Continuous Drain-Source Diode Forward Current 2.5 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.5 A (Note 2)0.8 1.2 V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is
guaranteed by design while RθCA is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
NDT3055L Rev.A1
a. 42oC/W when mounted on a 1 in2 pad of
2oz Cu. b. 95oC/W when mounted on a 0.066 in2
pad of 2oz Cu. c. 110oC/W when mounted on a 0.00123
in2 pad of 2oz Cu.
NDT3055L Rev.A1
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 3. On-Resistance Variation
with Temperature.
Figure 5. Transfer Characteristics.
Figure 4. On-Resistance Variation with
Gate-to- Source Voltage.
012345
0
5
10
15
20
25
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
V =10V
GS
3.5V
5.0V
4.5V
4.0V
DS
D
6.0V
3.0V
0 5 10 15 20 25
0.8
1
1.2
1.4
1.6
1.8
2
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V = 4.0V
GS
10V
4.5V
D
6.0V
8.0V
5.0V
R , NORMALIZED
DS(ON)
Figure 6. Body Diode Forward Voltage
Variation with Current and
Temperature.
246810
0
0.04
0.08
0.12
0.16
0.2
0.24
0.28
V , GATE TO SOURCE VOLTAGE (V)
GS
R , ON-RESISTANCE (OHM)
DS(ON)
25°C
I = 2A
D
T = 125°C
A
11.5 22.5 33.5 44.5 5
0
2
4
6
8
10
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
V = 5V
DS
GS
D
T = -55°C
J125°C
25°C
00.2 0.4 0.6 0.8 11.2 1.4
0.0001
0.001
0.01
0.1
1
10
30
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
T = 125°C
A
25°C
-55°C
V = 0V
GS
SD
S
-50 -25 025 50 75 100 125 150
0.6
0.8
1
1.2
1.4
1.6
1.8
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE ON-RESISTANCE
J
V = 10 V
GS
I = 4.0 A
D
R , NORMALIZED
DS(ON)
NDT3055L Rev.A1
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical Characteristics (continued)
0.0001 0.001 0.01 0.1 110 100 300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
1 2
R (t) = r(t) * R
R = 110 °C/W
T - T = P * R (t)
A
J
P(pk)
t
1 t
2
θJA
θJA
θJA
θJA
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1c.
Transient thermal response will change depending on the circuit board design.
0.1 0.3 1 4 10 30 60
10
20
50
100
200
500
1000
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C
iss
f = 1 MHz
V = 0V
GS
C
oss
C
rss
0246810 12 14
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
I = 4A
DV = 10V
DS 30V
40V
0.1 0.2 0.5 1 2 5 10 30 60 100
0.01
0.03
0.1
0.3
1
3
10
50
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
DS
D
1s
100ms
10s
10ms
RDS(ON) LIMIT
1ms
DC
V = 10V
SINGLE PULSE
R = 110 C/W
T = 25°C
GS
A
θJA o
100us
0.001 0.01 0.1 110 100 300
0
20
40
60
80
SINGLE PULSE TIME (SEC)
POWER (W)
SINGLE PULSE
R =110°C/W
T = 25°C
θJA
A
SOT-223 Packaging
Confi guration: Figure 1.0
Components Leader Tape
500mm min imum or
62 empty poc kets
Tr aile r Tape
300mm min imum or
38 empty poc kets
SOT-223 Tape Leader and Trailer
Configuration: Figure 2.0
Cover Tape
Carrier Tape
Note/Comments
Packaging Option
SOT-223 Packaging Information
Standard
(no flow code) D84Z
Packaging type
Reel Size
TNR
13" Dia
TNR
7" Dia
Qty per Reel/Tube/Bag 2,500 500
Box Dimension (mm) 343x64x343 184x187x47
Max qty per Box 5,000 1,000
Weight per unit (gm) 0.1246 0.1246
Weight per Reel (kg) 0.7250 0.1532
SOT-223 Unit Orientat io n
F
852
014
F
852
014
F
852
014
F
852
014
F63TNR Label
343mm x 342mm x 64mm
Intermediate box for Standard
184mm x 184mm x 47mm
Pizza Box for D84Z Option
F63TNR Label
LOT: CBVK741B019
FSID: PN22 22A
D/C1: D9842 Q TY1: SPEC REV:
SPEC:
QTY: 3000
D/C2: QTY2: CPN: N/F: F (F63TNR)3
F63TNR Label sample
F63TNR Label
Antistatic Cover Tape
Customiz ed Label
Static Dissipative
Embossed Carr ier Tape
Packaging Description:
SOT-223 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cov er tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2,5 00 uni t s pe r 13" or 33 0c m d ia met er re el . The re el s are
dark blue in color and is made of polystyrene plastic (anti-
static coated). Other option comes in 500 units per 7" or
177cm diameter reel. This and some other options are
further described in the Packaging Information table.
These full reels are individually barcode labeled and
placed inside a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside a barcode labeled shipping box which
co me s in di ffe re nt s iz es depe nd ing on th e nu mbe r of pa rts
shipped.
SOT-223 Tape and Reel Data and Package Dimensions
September 1999, Rev. B
Dimensions are in millimeter
Pkg type A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc
SOT-223
(12mm) 6.83
+/-0.10 7.42
+/-0.10 12.0
+/-0.3 1.55
+/-0.05 1.50
+/-0.10 1.75
+/-0.10 10.25
min 5.50
+/-0.05 8.0
+/-0.1 4.0
+/-0.1 1.88
+/-0.10
0.292
+/-
0.0130
9.5
+/-0.025 0.06
+/-0.02
P1
A0 D1
P0
F
W
E1
D0
E2
B0
Tc
Wc
K0
T
Dimensions are in inches and millimeters
Tape Size Reel
Option Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)
12m m 7" Dia 7.00
177.8 0.059
1.5 512 +0.020/-0.008
13 +0.5/-0.2 0.795
20.2 5.906
150 0.488 +0.078/-0.000
12.4 +2/0 0.724
18.4 0.469 – 0.606
11.9 15.4
12m m 13" Dia 13.00
330 0.059
1.5 512 +0.020/-0.008
13 +0.5/-0.2 0.795
20.2 7.00
178 0.488 +0.078/-0.000
12.4 +2/0 0.724
18.4 0.469 – 0.606
11.9 15.4
See detail AA
Dim A
max
13" Diameter Option
7" Diameter Opti on
Dim A
Max
See detail AA
W3
W2 max Measured at Hub
W1 Measured at Hub
Dim N
Dim D
min
Dim C
B Min
DETAIL AA
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum component rotation
0.5mm
maximum
0.5mm
maximum
Sketch C (Top View)
Component lateral movement
Typical
component
cavity
center line
20 deg maximum
Typical
component
center line
B0
A0
Sketch B (Top View)
Component Rotation
Sketch A (Side or F ront Sectional View)
Component Rotation
User Direction of Feed
SOT-223 Embossed Carrier Tape
Configuration: Figure 3.0
SOT-223 Reel Configur at io n: Figure 4.0
SOT-223 Tape and Reel Data and Package Dimensions, continued
July 1999, Rev. B
SOT-223 (FS PKG Code 47)
SOT-223 Tape and Reel Data and Package Dimensions, continued
1 : 1
Scale 1:1 on letter size paper
Part Weight per unit (gram): 0.1246
September 1999, Rev. C
TRADEMARKS
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CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
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failure to perform when properly used in accordance
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reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
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be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
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Definition of Terms
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Advance Information
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No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
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Semiconductor reserves the right to make changes at
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TinyLogic™
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