August 1998 NDT3055L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 4 A, 60 V. RDS(ON) = 0.100 @ VGS = 10 V, RDS(ON) = 0.120 @ VGS = 4.5 V. These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed. SuperSOTTM-3 Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. SuperSOTTM-8 SuperSOTTM-6 D D SO-8 D D S S D SOT-223 SOIC-16 SOT-223 D G G S SOT-223* G G S (J23Z) Absolute Maximum Ratings TA = 25oC unless otherwise noted Symbol Parameter NDT3055L Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage - Continuous 20 V ID Maximum Drain Current - Continuous 4 A (Note 1a) - Pulsed PD 25 Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c) TJ,TSTG Operating and Storage Temperature Range 3 W 1.3 1.1 -65 to 150 C THERMAL CHARACTERISTICS RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 42 C/W RJC Thermal Resistance, Junction-to-Case (Note 1) 12 C/W * Order option J23Z for cropped center drain lead. (c) 1998 Fairchild Semiconductor Corporation NDT3055L Rev.A1 Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A 60 V BVDSS/TJ Breakdown Voltage Temp. Coefficient ID = 250 A, Referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA o mV/o C 55 TJ =125C ON CHARACTERISTICS 1 A 50 A 100 nA (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A VGS(th)/TJ Gate Threshold Voltage Temp. Coefficient ID = 250 A, Referenced to 25 oC 1 RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 4 A VGS = 4.5 V, ID = 3.7 A On-State Drain Current VGS = 5 , VDS = 10 V gFS Forward Transconductance VDS = 5 V, ID = 4 A 2 V mV /oC -4 TJ =125C ID(ON) 1.6 0.07 0.1 0.125 0.18 0.103 0.12 10 A 7 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25, VGS = 0 V, f = 1.0 MHz 345 pF 110 pF 30 pF SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) Turn - Off Delay Time tf Turn - Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 25, ID = 1 A, VGS = 10 V, RGEN = 6 VDS = 40 V, ID = 4 A, VGS = 10 V 5 20 ns 7.5 20 ns 20 50 ns 7 20 ns 13 20 nC 1.7 nC 3.2 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.5 A 0.8 (Note 2) 2.5 A 1.2 V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a. 42oC/W when mounted on a 1 in2 pad of b. 95oC/W when mounted on a 2oz Cu. pad of 2oz Cu. 0.066 in2 c. 110oC/W when mounted on a 0.00123 in2 pad of 2oz Cu. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% NDT3055L Rev.A1 Typical Electrical Characteristics 2 VGS= 10V 6.0V 20 R DS(ON) , NORMALIZED 5.0V 4.5V 15 4.0V 10 3.5V 5 3.0V 0 0 1 2 3 4 DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 25 1.8 VGS = 4.0V 1.6 4.5V 5.0V 1.4 6.0V 1.2 8.0V 10V 1 0.8 5 0 5 10 15 I D, DRAIN CURRENT (A) VDS , DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 0.28 R DS(ON) , ON-RESISTANCE (OHM) R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D = 2A I D = 4.0 A VGS = 10 V 1.4 1.2 1 0.8 0.6 -50 0.24 0.2 0.16 TA = 125C 0.12 0.08 25C 0.04 0 -25 0 25 50 75 100 125 150 2 4 Figure 3. On-Resistance Variation with Temperature. 8 10 Figure 4. On-Resistance Variation with Gate-to- Source Voltage. 10 30 8 IS , REVERSE DRAIN CURRENT (A) TJ = -55C 25C 125C VDS = 5V ID , DRAIN CURRENT (A) 6 V GS , GATE TO SOURCE VOLTAGE (V) TJ , JUNCTION TEMPERATURE (C) 6 4 2 0 25 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 1.6 20 1 1.5 2 2.5 3 3.5 4 4.5 VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5 10 V GS = 0V 1 TA = 125C 0.1 25C -55C 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Current and Temperature. NDT3055L Rev.A1 Typical Electrical Characteristics (continued) I D = 4A 500 VDS = 10V 30V 8 CAPACITANCE (pF) VGS , GATE-SOURCE VOLTAGE (V) 1000 10 40V 6 4 Ciss 200 Coss 100 50 2 0 Crss f = 1 MHz VGS = 0V 20 0 2 4 6 8 10 12 10 0.1 14 0.3 Qg , GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 1m 10m 10 1s 10 s DC 0.3 VGS = 10V SINGLE PULSE R JA = 110o C/W TA = 25C 0.2 0.5 0m 0u 30 60 SINGLE PULSE RJA =110C/W TA = 25C s s 60 POWER (W) N) S(O RD 1 s s 40 20 1 2 5 10 30 0 0.001 60 100 0.01 VDS , DRAIN-SOURCE VOLTAGE (V) 0.1 1 10 100 300 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID , DRAIN CURRENT (A) 10 IT LIM 3 0.01 0.1 10 80 10 0.03 4 Figure 8. Capacitance Characteristics. 50 0.1 1 V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 0.5 D = 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.02 0.01 R JA (t) = r(t) * R JA R JA = 110 C/W P(pk) 0.01 t1 0.005 Single Pulse 0.002 0.001 0.0001 t2 TJ - TA = P * R JA (t) Duty Cycle, D = t1 / t 2 0.001 0.01 0.1 1 10 100 300 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. NDT3055L Rev.A1 SOT-223 Tape and Reel Data and Package Dimensions SOT-223 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: F63TNR Label Antistatic Cover Tape SOT-223 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 2,500 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 units per 7" or 177cm diameter reel. This and some other options are further described in the Packaging Information table. These full reels are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. One box contains two reels maximum. And these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped. Static Dissipative Embossed Carrier Tape F852 014 F852 014 F852 014 F852 014 SOT-223 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Standard (no flow code) TNR 2,500 D84Z SOT-223 Unit Orientation TNR 500 13" Dia 7" Dia 343x64x343 184x187x47 Max qty per Box 5,000 1,000 Weight per unit (gm) 0.1246 0.1246 Weight per Reel (kg) 0.7250 0.1532 343mm x 342mm x 64mm Intermediate box for Standard F63TNR Label Note/Comments F63TNR Label F63TNR Label sample 184mm x 184mm x 47mm Pizza Box for D84Z Option SOT-223 Tape Leader and Trailer Configuration: Figure 2.0 LOT: CBVK741B019 QTY: 3000 FSID: PN2222A SPEC: D/C1: D9842 D/C2: QTY1: QTY2: SPEC REV: CPN: N/F: F (F63TNR)3 Carrier Tape Cover Tape Components Trailer Tape 300mm minimum or 38 empty pockets Leader Tape 500mm minimum or 62 empty pockets September 1999, Rev. B SOT-223 Tape and Reel Data and Package Dimensions, continued SOT-223 Embossed Carrier Tape Configuration: Figure 3.0 P0 D0 T E1 F K0 Wc W E2 B0 Tc A0 D1 P1 User Direction of Feed Dimensions are in millimeter Pkg type SOT-223 (12mm) A0 6.83 +/-0.10 B0 7.42 +/-0.10 W 12.0 +/-0.3 D0 D1 1.55 +/-0.05 1.50 +/-0.10 E1 E2 1.75 +/-0.10 F 10.25 min P1 5.50 +/-0.05 P0 8.0 +/-0.1 4.0 +/-0.1 K0 1.88 +/-0.10 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). T Wc 0.292 +/0.0130 9.5 +/-0.025 0.06 +/-0.02 0.5mm maximum 20 deg maximum Typical component cavity center line B0 Tc 0.5mm maximum 20 deg maximum component rotation Typical component center line Sketch A (Side or Front Sectional View) A0 Component Rotation Sketch C (Top View) Component lateral movement Sketch B (Top View) SOT-223 Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max See detail AA Dim N 7" Diameter Option B Min Dim C See detail AA W3 13" Diameter Option Dim D min W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size Reel Option Dim A Dim B 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 5.906 150 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 - 0.606 11.9 - 15.4 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 7.00 178 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 - 0.606 11.9 - 15.4 12mm 7" Dia 7.00 177.8 12mm 13" Dia 13.00 330 Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL) July 1999, Rev. B SOT-223 Tape and Reel Data and Package Dimensions, continued SOT-223 (FS PKG Code 47) 1:1 Scale 1:1 on letter size paper Part Weight per unit (gram): 0.1246 September 1999, Rev. C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM TinyLogicTM UHCTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.