2N7000 2N7002 N-channel 60 V, 1.8 , 0.35 A, SOT23-3L, TO-92 STripFETTM Power MOSFET Features Type VDSS RDS(on) max ID 2N7000 60 V < 5 (@10V) 0.35 A 2N7002 60 V < 5 (@10V) 0.20 A 3 2 1 Low Qg Low threshold drive SOT23-3L TO-92 Application Switching applications Description This Power MOSFET is the second generation of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Figure 1. Internal schematic diagram SOT23-3L Table 1. TO-92 Device summary Order codes Marking Package Packaging 2N7000 2N7000G TO-92 Bulk 2N7002 ST2N SOT23-3L Tape and reel November 2008 Rev 9 1/14 www.st.com 14 Contents 2N7000, 2N7002 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 .............................................. 9 2N7000, 2N7002 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-92 VDS VDGR VGS ID IDM (1) PTOT SOT23-3L Drain-source voltage (VGS = 0) 60 V Drain-gate voltage (RGS = 20 k) 60 V 18 V Gate- source voltage Drain current (continuous) at TC = 25 C 0.35 0.20 A Drain current (pulsed) 1.4 1 A 1 0.35 W Total dissipation at TC = 25 C 1. Pulse width limited by safe operating area Table 3. Thermal data Value Symbol Rthj-amb TJ Tstg 1. Parameter Thermal resistance junction-ambient max Unit TO-92 SOT23-3L 125 357.1 (1) C/W Operating junction temperature - 55 to 150 C Storage temperature When mounted on 1inch FR-4, 2 Oz copper board. 3/14 Electrical characteristics 2 2N7000, 2N7002 Electrical characteristics (TCASE = 25 C unless otherwise specified) Table 4. On/off states Symbol Parameter V(BR)DSS Drain-source breakdown voltage ID = 250 A, VGS =0 IDSS Zero gate voltage drain current (VGS = 0) VDS = max rating VDS = max rating, TC = 125 C IGSS Gate-body leakage current (VDS = 0) VGS = 18 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 A RDS(on) Static drain-source on resistance VGS = 10 V, ID = 0.5 A VGS = 4.5 V, ID = 0.5 A Table 5. Symbol Test conditions Typ. Max. 60 1 Unit V 1 10 A A 100 nA 2.1 3 V 1.8 2 5 5.3 Typ. Max. Unit Dynamic Parameter Test conditions Min. gfs (1) Forward transconductance VDS = 10 V , ID = 0.5 A 0.6 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 43 20 6 pF pF pF td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 30 V, ID = 0.5 A RG = 4.7 VGS = 4.5 V (see Figure 16) 5 15 7 8 ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 30 V, ID = 1 A, VGS = 5 V (see Figure 17) 1.4 0.8 0.5 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5%. 4/14 Min. 2 nC nC nC 2N7000, 2N7002 Table 6. Symbol Electrical characteristics Source drain diode Parameter ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD trr Qrr IRRM Test conditions Min. Typ. ISD = 1 A, VGS = 0 Reverse recovery time ISD = 1 A, di/dt = 100 A/s, Reverse recovery charge VDD = 20 V, Tj = 150 C Reverse recovery current (see Figure 18) 32 25 1.6 Max. Unit 0.35 1.40 A A 1.2 V ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5% 5/14 Electrical characteristics 2N7000, 2N7002 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-92 Figure 3. Thermal impedance for TO-92 Figure 4. Safe operating area for SOT23-3L Figure 5. Thermal impedance for SOT23-3L Figure 6. Output characteristics Figure 7. Transfer characteristics 6/14 2N7000, 2N7002 Figure 8. Transconductance Electrical characteristics Figure 9. Static drain-source on resistance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on resistance vs temperature 7/14 Electrical characteristics Figure 14. Source-drain diode forward characteristics 8/14 2N7000, 2N7002 Figure 15. Normalized BVDSS vs temperature 2N7000, 2N7002 3 Test circuits Test circuits Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit VDD 12V 47k 1k 100nF 3.3 F 2200 RL F VGS IG=CONST VDD 100 Vi=20V=VGMAX VD RG 2200 F D.U.T. D.U.T. VG 2.7k PW 47k 1k PW AM01468v1 AM01469v1 Figure 18. Test circuit for inductive load Figure 19. Unclamped Inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE L A D G S 3.3 F B B B VD L=100H 25 1000 F D VDD 2200 F 3.3 F VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 20. Unclamped inductive waveform AM01471v1 Figure 21. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 10% AM01473v1 9/14 Package mechanical data 4 2N7000, 2N7002 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/14 2N7000, 2N7002 Package mechanical data Table 7. TO-92 mechanical data mm Dim. Min. Typ. Max. A 4.32 4.95 b 0.36 0.51 D 4.45 4.95 E 3.30 3.94 e 2.41 2.67 e1 1.14 1.40 L 12.70 15.49 R 2.16 2.41 S1 0.92 1.52 W 0.41 0.56 V Figure 22. 5 TO-92 drawing 0102782 D 11/14 Package mechanical data Table 8. 2N7000, 2N7002 SOT23-3L mechanical data mm Dim. Min. Typ. A Max. 1.25 A1 0 0.15 A2 1.00 1.20 A3 0.60 0.70 D 2.826 3.026 E 2.60 3.00 E1 1.526 1.726 e 0.95 e1 1.90 L 0.35 0.60 L1 0.59 L2 0.25 R 0.05 R1 0.05 0.20 K 3 7 K1 6 10 Figure 23. SOT23-3L drawing Top view Bottom view 8162275_Rev_A 12/14 2N7000, 2N7002 5 Revision history Revision history Table 9. Document revision history Date Revision 09-Oct-2004 1 First document 22-Jun-2004 2 Complete document 06-Apr-2005 3 New typ and max value inserted for Vgs(th) 19-Apr-2005 4 The document has been reformatted 26-Apr-2005 5 New Pin configuration for TO-92 28-Apr-2005 6 Pin configuration change again 19-Jun-2006 7 New template, no content change 03-Sep-2007 8 Corrected marking on first page 9 - Updated Table 7: TO-92 mechanical data and Figure 22: TO-92 drawing. - Updated Table 8: SOT23-3L mechanical data and Figure 23: SOT23-3L drawing. 04-Nov-2008 Changes 13/14 2N7000, 2N7002 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. 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