PD -94056 IRF7433 HEXFET(R) Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. VDSS RDS(on) max ID -12V 24m@VGS = -4.5V 30m@VGS = -2.5V -8.7A 46m@VGS = -1.8V -6.3A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. -7.4A SO-8 T o p V ie w Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units -12 -8.9 -7.1 -36 2.5 1.6 0.02 8 -55 to +150 V A W W W/C V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient www.irf.com Max. Units 50 C/W 1 12/15/00 http://store.iiic.cc/ IRF7433 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -12 --- --- --- --- -0.4 22 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.007 --- --- --- --- --- --- --- --- --- 20 4.5 4.0 8.8 8.2 272 175 1877 512 310 Max. Units Conditions --- V V GS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 24 VGS = -4.5V, ID = -8.7A m VGS = -2.5V, ID = -7.4A 30 46 VGS = -1.8V, ID = -6.3A -0.9 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -8.7A -1.0 VDS = -9.6V, VGS = 0V A -25 VDS = -9.6V, VGS = 0V, TJ = 70C -100 nA VGS = -8V 100 VGS = 8V --- ID = -8.7A --- nC VDS = -6V --- VGS = -4.5V 13 VDD = -6V, VGS = -4.5V ns 12 ID = -1.0A 408 RD = 6 263 RG = 6 --- VGS = 0V --- pF VDS = -10V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- -2.5 --- --- -36 --- --- --- --- 36 28 -1.2 54 42 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.5A, VGS = 0V TJ = 25C, I F = -2.5A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by When mounted on 1 inch square copper board, t < 10 sec. max. junction temperature. Pulse width 400s; duty cycle 2%. 2 www.irf.com http://store.iiic.cc/ IRF7433 100 VGS TOP -10.0V -7.0V -4.5V -3.0V -2.5V -1.8V -1.5V BOTTOM -1.2V 10 -1.2V 1 VGS -10.0V -7.0V -4.5V -3.0V -2.5V -1.8V -1.5V BOTTOM -1.2V TOP -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) 100 10 -1.2V 1 20s PULSE WIDTH Tj = 150C 20s PULSE WIDTH Tj = 25C 0.1 0.1 0.1 1 10 100 0.1 -VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 2.0 TJ = 150 C 10 TJ = 25 C V DS = -10V 20s PULSE WIDTH 1.5 2.0 10 100 Fig 2. Typical Output Characteristics 100 1 1.0 1 -VDS, Drain-to-Source Voltage (V) 2.5 ID = -8.7A 1.5 1.0 0.5 0.0 -60 -40 -20 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com VGS = -4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 http://store.iiic.cc/ IRF7433 C, Capacitance(pF) 2800 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 2400 Coss = Cds + Cgd Ciss 2000 1600 1200 800 Coss 400 Crss -VGS , Gate-to-Source Voltage (V) 6 3200 ID = -8.7A 5 4 3 2 1 0 0 1 10 0 100 5 10 15 20 25 QG , Total Gate Charge (nC) -VDS, Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) -IID , Drain Current (A) -ISD , Reverse Drain Current (A) V DS =-9.6V V DS =-6V 10 TJ = 150 C TJ = 25 C 1 100us 10 1ms 10ms 0.1 0.2 TC = 25 C TJ = 150 C Single Pulse V GS = 0 V 0.4 0.6 0.8 1.0 1 0.1 1.2 1 10 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 100 www.irf.com http://store.iiic.cc/ IRF7433 9.0 VDS -ID , Drain Current (A) 7.5 VGS RD D.U.T. RG - 6.0 + VDD VGS 4.5 Pulse Width 1 s Duty Factor 0.1 % 3.0 Fig 10a. Switching Time Test Circuit 1.5 td(on) tr t d(off) tf VGS 0.0 10% 25 50 75 100 125 150 TC , Case Temperature ( C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 PDM 0.02 1 t1 0.01 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 http://store.iiic.cc/ 0.050 ( ) RDS ( on ) , Drain-to-Source On Resistance ( RDS(on), Drain-to -Source On Resistance ) IRF7433 0.040 0.030 ID = -8.7A 0.020 0.010 0.0 2.0 4.0 6.0 8.0 0.15 0.12 VGS = -1.8V 0.09 0.06 VGS = -2.5V 0.03 10.0 VGS = -4.5V 0 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 -VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage -ID , Drain Current ( A ) Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50K 12V QG .2F .3F 10 V D.U.T. QGS +VDS QGD VGS -3mA VG IG ID Current Sampling Resistors Charge Fig 14a. Basic Gate Charge Waveform 6 Fig 14b. Gate Charge Test Circuit www.irf.com http://store.iiic.cc/ IRF7433 1.0 300 200 Power (W) -VGS(th) ( V ) 0.8 ID = -250A 0.6 100 0.4 0.2 0 -75 -50 -25 0 25 50 75 100 125 150 0.0001 TJ , Temperature ( C ) 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000 Time (sec) Fig 16. Typical Power Vs. Time Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 7 http://store.iiic.cc/ IRF7433 SO-8 Package Details D 8 6 7 6 MAX MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BAS IC 1.27 BAS IC e1 A 5 H E 0.25 [.010] 1 6X 2 3 A 4 e e1 C .025 BAS IC 0.635 BAS IC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 y 0.10 [.004] 0.25 [.010] MAX K x 45 A 8X b MILLIMET ERS MIN 5 A INCHES DIM B A1 8X L 8X c 7 C A B F OOT PRINT NOT ES : 1. DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES ]. 4. OUTLINE CONFORMS T O JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS. MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS. MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENSION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) INTERNAT IONAL RECTIFIER LOGO YWW XXXX F7101 DATE CODE (YWW) Y = LAS T DIGIT OF THE YEAR WW = WEEK LOT CODE PART NUMBER 8 www.irf.com http://store.iiic.cc/ IRF7433 SO-8 Tape and Reel T E R M IN A L N U M B E R 1 1 2 .3 ( .48 4 ) 1 1 .7 ( .46 1 ) 8 .1 ( .31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N N O TES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1. 33 0.0 0 (1 2 .9 9 2 ) M AX . 1 4 .4 0 ( .5 66 ) 1 2 .4 0 ( .4 88 ) N O TE S : 1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . Data and specifications subject to change without notice. This product has been designed and qualified for the commercial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/00 www.irf.com 9 http://store.iiic.cc/