HEXFET® Power MOSFET
12/15/00
IRF7433
Absolute Maximum Ratings
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Thermal Resistance
Parameter Max. Units
VDS Drain-Source Voltage -12 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -8.9
ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V -7.1 A
IDM Pulsed Drain Current-36
PD @TA = 25°C Maximum Power Dissipation2.5 W
PD @TA = 70°C Maximum Power Dissipation1.6 W
Linear Derating Factor 0.02 W/°C
VGS Gate-to-Source Voltage ±8 V
TJ , TSTG Junction and Storage Temperature Range -55 to +150 °C
PD -94056
VDSS RDS(on) max ID
-12V 24mΩ@VGS = -4.5V -8.7A
30mΩ@VGS = -2.5V -7.4A
46mΩ@VGS = -1.8V -6.3A
Parameter Max. Units
RθJA Maximum Junction-to-Ambient50 °C/W
Description
Top View
8
1
2
3
45
6
7
D
D
DG
S
A
D
S
S
SO-8
These P-Channel MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
lUltra Low On-Resistance
lP-Channel MOSFET
lSurface Mount
lAvailable in Tape & Reel
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Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V
trr Reverse Recovery Time ––– 36 54 ns TJ = 25°C, I F = -2.5A
Qrr Reverse Recovery Charge ––– 28 42 nC di/dt = -100A/µs
Source-Drain Ratings and Characteristics
––– –––
––– ––– -36
-2.5 A
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
S
D
G
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -12 –– – ––– V V GS = 0V, I D = -250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.007 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 24 VGS = -4.5V, ID = -8.7A
––– ––– 30 VGS = -2.5V, ID = -7.4A
––– ––– 46 VGS = -1.8V, ID = -6.3A
VGS(th) Gate Threshold Voltage -0.4 ––– -0.9 V V DS = VGS, ID = -250µA
gfs Forward Transconductance 22 ––– ––– S V DS = -10V, ID = -8.7A
––– ––– -1.0 VDS = -9.6V, VGS = 0V
––– ––– -25 VDS = -9.6V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -8V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 8V
QgTotal Gate Charge –– – 20 ––– ID = -8.7A
Qgs Gate-to-Source Charge ––– 4 .5 ––– nC VDS = -6V
Qgd Gate-to-Drain ("Miller") Charge ––– 4 .0 –– – V GS = -4.5V
td(on) Turn-On Delay Time ––– 8.8 13 VDD = -6V, VGS = -4.5V
trRise Time ––– 8.2 12 I D = -1.0A
td(off) Turn-Off Delay Time ––– 272 4 08 R D = 6Ω
tfFall Time ––– 175 263 RG = 6Ω
Ciss Input Capacitance ––– 1877 ––– VGS = 0V
Coss Output Capacitance ––– 512 ––– pF VDS = -10V
Crss Reverse Transfer Capacitance ––– 310 – –– ƒ = 1.0MHz
IGSS
µA
mΩ
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
nA
ns
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
-ID, Drain-to-Source Current (A)
-1.2V
20µs PULSE WIDTH
Tj = 25°C
VGS
TOP -10.0V
-7.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
BOTTOM -1.2V
0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
-ID, Drain-to-Source Current (A)
-1.2V
20µs PULSE WIDTH
Tj = 150°C
VGS
TOP -10.0V
-7.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
BOTTOM -1.2V
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-4.5V
-8.7A
1
10
100
1.0 1.5 2.0 2.5
V = -10V
20µs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0 5 10 15 20 25
0
1
2
3
4
5
6
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D-8.7A
V =-6V
DS
V =-9.6V
DS
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
1
10
100
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 150 C
= 25 C
°°
J
C
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
110 100
-VDS, Drain-to-Source Voltage (V)
0
400
800
1200
1600
2000
2400
2800
3200
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss
= Cds + Cgd
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
25 50 75 100 125 150
0.0
1.5
3.0
4.5
6.0
7.5
9.0
T , Case Temperature( C)
-I , Drain Current (A)
°
C
D
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D =t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
VDS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RGD.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
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Fig 13. Typical On-Resistance Vs.
Drain Current
Fig 12. Typical On-Resistance Vs.
Gate Voltage
Fig 14b. Gate Charge Test Circuit
Fig 14a. Basic Gate Charge Waveform
Q
G
Q
GS
Q
GD
V
G
Charge
10 V
0.0 2.0 4.0 6.0 8.0 10.0
-VGS, Gate -to -Source Voltage (V)
0.010
0.020
0.030
0.040
0.050
RDS(on), Drain-to -Source On Resistance (
Ω)
ID = -8.7A
0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0
-ID , Drain Current ( A )
0
0.03
0.06
0.09
0.12
0.15
RDS ( on ) , Drain-to-Source On Resistance (
Ω )
VGS = -2.5V
VGS = -1.8V
VGS = -4.5V
D.U.T. V
DS
I
D
I
G
-3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
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Fig 15. Typical Vgs(th) Vs.
Junction Temperature
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
0.2
0.4
0.6
0.8
1.0
-VGS(th) ( V )
ID = -250µA
Fig 16. Typical Power Vs. Time
0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000
Time (sec)
0
100
200
300
Power (W)
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SO-8 Package Details
SO-8 Part Marking
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX MILLIMETERSINCHES MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] CAB
e1 A
A1
8X b
C
0.10 [.004]
4312
FOOTPRINT
8X 0.72 [. 028]
6.46 [.255]
3X 1.27 [. 050]
4. OUTLINE CONFORMS T O JEDEC OUT LINE MS-012AA.
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
8X 1.78 [. 070]
EXAMPLE: THIS IS AN IRF710 1 (MOSFET)
INTERNATIONAL
RECTIFIER
LOGO
F7101
YWW
XXXX
PART N UMBER
LOT CODE
WW = WEEK
Y = LAST DIGIT OF THE YEAR
DATE CODE (YWW)
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33 0.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTRO LLING DIMEN SIO N : MILLIM ETER.
2. OU TL INE CO NFOR MS T O EIA-481 & EIA-541.
FEED DIRECTION
TERM INAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CO NTR OLLING DIM ENSION : M ILLIM ETER.
2. ALL DIM ENSIONS ARE SHO W N IN MILLIM ETERS(INCHES).
3. O U TLIN E C ON FORM S TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Data and specifications subject to change without notice.
This product has been designed and qualified for the commercial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/00
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