1Oct-21-1997
BSM 150 GB 120 DN2
IGBT Power Module
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type VCE ICPackage Ordering Code
BSM 150 GB 120 DN2 1200V210AHALF-BRIDGE 2 C67076-A2108-A70
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCE 1200 V
Collector-gate voltage
RGE = 20 kΩVCGR 1200
Gate-emitter voltage VGE ± 20
DC collector current
TC = 25 °C
TC = 80 °C
IC
150
210 A
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
ICpuls
300
420
Power dissipation per IGBT
TC = 25 °C Ptot 1250 W
Chip temperature Tj+ 150 °C
Storage temperature Tstg -40 ... + 125
Thermal resistance, chip case RthJC ≤ 0.1 K/W
Diode thermal resistance, chip case RthJCD≤ 0.25
Insulation test voltage, t = 1min. Vis 2500 Vac
Creepage distance - 20 mm
Clearance - 11
DIN humidity category, DIN 40 040 -F sec
IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56
2Oct-21-1997
BSM 150 GB 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Gate threshold voltage
VGE = VCE, IC = 6 mA VGE(th) 4.5 5.5 6.5 V
Collector-emitter saturation voltage
VGE = 15 V, IC = 150 A, Tj = 25 °C
VGE = 15 V, IC = 150 A, Tj = 125 °C
VCE(sat)
-
- 3.1
2.5 3.7
3
Zero gate voltage collector current
VCE = 1200 V, VGE = 0 V, Tj = 25 °C
VCE = 1200 V, VGE = 0 V, Tj = 125 °C
ICES
-
- 8
2 -
2.8 mA
Gate-emitter leakage current
VGE = 20 V, VCE = 0 V IGES - - 320 nA
AC Characteristics
Transconductance
VCE = 20 V, IC = 150 A gfs 62 --S
Input capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz Ciss - 11 -nF
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz Coss - 1.6 -
Reverse transfer capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz Crss - 0.6 -
3Oct-21-1997
BSM 150 GB 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
VCC = 600 V, VGE = 15 V, IC = 150 A
RGon = 5.6 Ω
td(on)
- 200 400
ns
Rise time
VCC = 600 V, VGE = 15 V, IC = 150 A
RGon = 5.6 Ω
tr
- 100 200
Turn-off delay time
VCC = 600 V, VGE = -15 V, IC = 150 A
RGoff = 5.6 Ω
td(off)
- 600 800
Fall time
VCC = 600 V, VGE = -15 V, IC = 150 A
RGoff = 5.6 Ω
tf
- 70 100
Free-Wheel Diode
Diode forward voltage
IF = 150 A, VGE = 0 V, Tj = 25 °C
IF = 150 A, VGE = 0 V, Tj = 125 °C
VF
-
- 1.8
2.3 -
2.8 V
Reverse recovery time
IF = 150 A, VR = -600 V, VGE = 0 V
diF/dt = -1500 A/µs, Tj = 125 °C
trr
- 0.4 -
µs
Reverse recovery charge
IF = 150 A, VR = -600 V, VGE = 0 V
diF/dt = -1500 A/µs
Tj = 25 °C
Tj = 125 °C
Qrr
-
- 18
5 -
-
µC
4Oct-21-1997
BSM 150 GB 120 DN2
Power dissipation
Ptot = ƒ(TC)
parameter: Tj ≤ 150 °C
0 20 40 60 80 100 120 °C 160
TC
0
100
200
300
400
500
600
700
800
900
1000
1100
W
1300
Ptot
Safe operating area
IC = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
0
10
1
10
2
10
3
10
A
IC
10 0 10 1 10 2 10 3 V
VCE
DC
10 ms
1 ms
100 µs
tp = 18.0µs
Collector current
IC = ƒ(TC)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C
0 20 40 60 80 100 120 °C 160
TC
0
20
40
60
80
100
120
140
160
180
200
A
240
IC
Transient thermal impedance IGBT
Zth JC = ƒ(tp)
parameter: D = tp / T
-4
10
-3
10
-2
10
-1
10
0
10
K/W
ZthJC
10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
tp
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
5Oct-21-1997
BSM 150 GB 120 DN2
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C
0 1 2 3 V5
VCE
0
20
40
60
80
100
120
140
160
180
200
220
240
260
A
300
IC
17V
15V
13V
11V
9V
7V
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 125 °C
0 1 2 3 V5
VCE
0
20
40
60
80
100
120
140
160
180
200
220
240
260
A
300
IC
17V
15V
13V
11V
9V
7V
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 µs, VCE = 20 V
0 2 4 6 8 10 V14
VGE
0
20
40
60
80
100
120
140
160
180
200
220
240
260
A
300
IC
6Oct-21-1997
BSM 150 GB 120 DN2
Typ. gate charge
VGE = ƒ(QGate)
parameter: IC puls = 150 A
0 200 400 600 800 nC 1100
QGate
0
2
4
6
8
10
12
14
16
V
20
VGE
800 V600 V
Typ. capacitances
C = f (VCE)
parameter: VGE = 0 V, f = 1 MHz
0 5 10 15 20 25 30 V40
VCE
-1
10
0
10
1
10
2
10
nF
C
Ciss
Coss
Crss
Reverse biased safe operating area
ICpuls = f(VCE) , Tj = 150°C
parameter: VGE = 15 V
0 200 400 600 800 1000 1200 V1600
VCE
0.0
0.5
1.0
1.5
2.5
ICpuls/IC
Short circuit safe operating area
ICsc = f(VCE) , Tj = 150°C
parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 25 nH
0 200 400 600 800 1000 1200 V1600
VCE
0
2
4
6
8
12
ICsc/IC
7Oct-21-1997
BSM 150 GB 120 DN2
Typ. switching time
I = f (IC) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 5.6 Ω
0 50 100 150 200 250 300 A400
IC
1
10
2
10
3
10
4
10
ns
t
tdon
tr
tdoff
tf
Typ. switching time
t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, IC = 150 A
0 10 20 30 40 Ω60
RG
1
10
2
10
3
10
4
10
ns
t
tdon
tr
tdoff
tf
Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 5.6 Ω
0 50 100 150 200 250 300 A400
IC
0
20
40
60
80
mWs
120
E Eon
Eoff
Typ. switching losses
E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600V, VGE = ± 15 V, IC = 150 A
0 10 20 30 40 Ω60
RG
0
20
40
60
80
mWs
120
E
Eon
Eoff
8Oct-21-1997
BSM 150 GB 120 DN2
Forward characteristics of fast recovery
reverse diode IF = f(VF)
parameter: Tj
0.0 0.5 1.0 1.5 2.0 V3.0
VF
0
20
40
60
80
100
120
140
160
180
200
220
240
260
A
300
IF
Tj=25°C=125°C
j
T
Transient thermal impedance Diode
Zth JC = ƒ(tp)
parameter: D = tp / T
-4
10
-3
10
-2
10
-1
10
0
10
K/W
ZthJC
10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
tp
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
9Oct-21-1997
BSM 150 GB 120 DN2
Circuit Diagram
Package Outlines
Dimensions in mm
Weight: 420 g
Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM150GB120DN2
typ.
LsCE 20 nH
Modulinduktivität
stray inductance module
Anhang C-Serie
Appendix C-series
Gehäuse spezifische Werte
Housing specific values
Gehäusemaße C-Serie
Package outline C-series
Appendix C-series Appendix_C-Serie_BSM150GB120DN2.xls
2001-09-20
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