NTE5541 thru NTE5548
Silicon Controlled Rectifier (SCR)
35 Amp, TO48
Description:
The NTE5541 thru NTE5548 are silicon controlled rectifiers (SCR) packaged in a TO48 type case
designed for industrial and consumer applications such as power supplies; battery chargers; temper-
ature, motor, light and welder controls.
Absolute Maximum Ratings:
Repetitive Peak Off−State Voltage (TJ = +100C) VDRM
NTE5541 50V....................................................................
NTE5543 200V...................................................................
NTE5544 300V...................................................................
NTE5545 400V...................................................................
NTE5546 500V...................................................................
NTE5547 600V...................................................................
NTE5548 800V...................................................................
Repetitive Peak Reverse Voltage (TJ = +100C) VRRM
NTE5541 50V....................................................................
NTE5543 200V...................................................................
NTE5544 300V...................................................................
NTE5545 400V...................................................................
NTE5546 500V...................................................................
NTE5547 600V...................................................................
NTE5548 800V...................................................................
RMS On−State Current (TC = +75C), I(RMS) 35A...........................................
Peak Surge (Non−Repetitive) On−State Current (One Cycle at 50Hz or 60Hz), ITSM 300A.......
Peak Gate−Trigger Current (3s Max), IGTM 20A...........................................
Peak Gate−Power Dissipation (IGT IGTM for 3s Max), PGM 20W...........................
Average Gate Power Dissipation, PG(AV) 500mW..........................................
Operating Temperature Range, Toper −40 to +150C........................................
Storage Temperature Range, Tstg −40 to +150C..........................................
Typical Thermal Resistance, Junction−to−Case, RthJC 1.4C/W..............................
Note 1. NTE5541, NTE5542, NTE5544, and NTE5546 are a discontinued devices and no longer
available.
Rev. 5−13
Electrical Characteristics: (At “Maximum Ratings” and Specified Case Temperatures)
Parameter Symbol Test Conditions Min Typ Max Unit
Peak Off−State Current IDRM,
IRRM
VDRM & VRRM = Max Rating,
TJ = +100C, Gate Open
− − 2.0 mA
Maximum On−State Voltage (Peak) IHO TC = +25C− − 50 mA
DC Gate Trigger Current IGT Anode Voltage = 12V, RL = 30,
TC = +25C
− − 30 mA
DC Gate Trigger Voltage VGT Anode Voltage = 12V, RL = 30,
TC = +25C
− − 2.0 V
Gate Controlled Turn−On Time tgt IGT = 150mA −2.5 −s
Critical Rate of Rise of
Off−State Voltage
dv/dt
(Critical)
Gate Open, TC = +100C−100 −V/s
.200 (5.08) Max
.562
(14.28)
Max
1.193
(30.33)
Max
.453
(11.5)
Max
CathodeGate
Anode
1/4−28 UNF−2A
