LESHAN RADIO COMPANY, LTD.
S22–1/2
Band-switching diode
SOD523 SC-79
1
2
BA 892
2
ANODE
1
CATHODE
FEATURES
· Small plastic SMD package
· Low diode capacitance
· Low diode forward resistance
· Small inductance.
APPLICATIONS
· Low loss band-switching in VHF television tuners
· Surface mount band-switching circuits.
DESCRIPTION
Planar, high performance band-switch diode in a small SMD plastic
package (SOD523).
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V Rcontinuous reverse voltage –35 V
II
Fcontinuous forward current –100 mA
P tot total power dissipation T s =90°C –715 mW
T stg storage temperature -65 +150 °C
T jjunction temperature -65 +150 °C
ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX. UNIT
V Fforward voltage I F =10 mA – – 1 V
I Rreverse current V R =30 V – – 20 n A
C ddiode capacitance f = 1 MHz; note 1;
V R = 1 V – 0.92 1.4 pF
V R = 3 V 0.6 0.85 1.1 pF
r Ddiode forward resistance f = 100 MHz; note 1;
I F = 3 m A – 0.45 0.7 Ω
I F = 1 0 m A – 0.36 0.5 Ω
L Sseries inductance – 0.6 - n H
Note
1. Guaranteed on AQL basis; inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
Rth j-s thermal resistance from junction to soldering-point 8 5 K/W
LESHAN RADIO COMPANY, LTD.
S22–2/2
BA 892
10
1
10 -1
0.1 1 10
I F (mA )
r D( Ω)
2
1.6
1.2
0.8
0.4
00102030
V R ( V )
C d (pF)
f = 1 MHz; T j =25°C
Fig.1 Diode capacitance as a function of reverse
voltage; typical values. Fig.2 Diode forward resistance as a function of
forward current; typical values.
f = 100 MHz; T j =25°C
