SD603C..C SERIES
FAST RECOVERY DIODES Hockey Puk Version
600A
1
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Features
High power FAST recovery diode series
1.0 to 2.0 µs recovery time
High voltage ratings up to 2200V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Press-puk encapsulation
Case style conform to JEDEC B-43
Maximum junction temperature 125°C
Typical Applications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
Major Ratings and Characteristics
IF(AV) 600 A
@ Ths 55 °C
IF(RMS) 942 A
@ Ths 25 °C
IFSM @ 50Hz 8320 A
@ 60Hz 8715 A
I2t@
50Hz 346 KA2s
@ 60Hz 316 KA2s
VRRM range 400 to 2200 V
trr range 1.0 to 2.0 µs
@ TJ25 °C
TJ- 40 to 125 °C
Parameters SD603C..C Units
case style B-43
SD603C..C Series
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Bulletin I2068 rev. C 04/00
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Code
(µs) (A) (A/µs) (V) (µs) (µC) (A)
Test conditions Max. values @ TJ
= 125 °C
Recovery Characteristics
typical trr Ipk di/dt Vrtrr Qrr Irr
@ 25% IRRM Square Pulse @ 25% IRRM
TJ
= 25 oC
S10 1.0 2.0 45 34
S15 1.5 1000 25 -30 3.2 87 51
S20 2.0 3.5 97 55
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage VRRM max. repetitive VRSM , maximum non- IRRM max.
Type number Code peak and off-state voltage repetitive peak voltage TJ = 125°C
VVmA
04 400 500
SD603C..S10C 08 800 900
10 1000 1100
12 1200 1300
SD603C..S15C 14 1400 1500
16 1600 1700
20 2000 2100
22 2200 2300
Parameter SD603C..C Units Conditions
Forward Conduction
KA2s
A
IF(AV) Max. average forward current 600(300) A 180° conduction, half sine wave.
@ Heatsink temperature 55(75) °C Double side (single side) cooled
IF(RMS) Max. RMS current 942 A @ 25°C heatsink temperature double side cooled
IFSM Max. peak, one-cycle 8320 t = 10ms No voltage
non-repetitive forward current 8715 t = 8.3ms reapplied
7000 t = 10ms 100% VRRM
7330 t = 8.3ms reapplied Sinusoidal half wave,
I2t Maximum I2t for fusing 346 t = 10ms No voltage Initial TJ = TJ max.
316 t = 8.3ms reapplied
245 t = 10ms 100% VRRM
224 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 3460 KA2√s t = 0.1 to 10ms, no voltage reapplied
VF(TO)1 Low level of threshold voltage 1.36 (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
VF(TO)2High level of threshold voltage 1.81 (I > π x IF(AV)), TJ = TJ max.
rf1 Low level of forward slope resistance 0.87 (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
rf2 High level of forward slope resistance 0.67 (I > π x IF(AV)), TJ = TJ max.
VFM Max. forward voltage 2.97 V Ipk= 1885A, TJ = 25°C, tp = 10ms sinusoidal wave
mΩ
V
SD603C..S20C
45
SD603C..C Series
3
Bulletin I2068 rev. C 04/00
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5123 4
SD 60 3 C 22 S20 C
7
6
Device Code
TJMax. operating temperature range -40 to 125
Tstg Max. storage temperature range -40 to 150
RthJ-hs Max. thermal resistance, 0.076 DC operation single side cooled
junction to heatsink 0.038 DC operation double side cooled
F Mounting force, ± 10% 9800 N
(1000) (Kg)
wt Approximate weight 83 g
Case style B-43 See Outline Table
Parameter SD603C..C Units Conditions
Thermal and Mechanical Specifications
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
°C
K/W
1- Diode
2- Essential part number
3-3 = Fast recovery
4-C = Ceramic Puk
5- Voltage code: Code x 100 = VRRM (see Voltage Ratings table)
6-t
rr code (see Recovery Characteristics table)
7- C = Puk Case B-43
Ordering Information Table
Sinusoidal conduction Rectangular conduction
Conduction angle Units Conditions
Single Side Double Side Single Side Double Side
180°0.006 0.007 0.005 0.005
120°0.008 0.008 0.008 0.008
90°0.010 0.010 0.011 0.011 K/W TJ = TJ max.
60°0.015 0.015 0.016 0.015
30°0.026 0.025 0.026 0.025
SD603C..C Series
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Outline Table
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
60
70
80
90
100
110
120
130
0 100 200 300 400 500
30° 60°
90°
180° DC
120°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Period
SD603C..C Series
(Single Side Cooled)
R (DC) = 0.076 K/W
thJ-h s
70
80
90
100
110
120
130
0 50 100 150 200 250 300 350
30°60°90°
120°
180°
A vera g e F orw ard C u rre nt (A )
Maximum Allow able Heatsink Temperature (°C)
Conduction Angle
SD 603C ..C Serie s
(Single Side C o oled)
R (D C ) = 0.076 K/W
th J-hs
0.8(0.03) MIN.
3.5 (0.14) DIA. NOM. x
1.8 (0.07) DEEP MIN. BOTH ENDS
14.4 (0.57)
15.4 (0.61)
BOTH ENDS
40.5 (1.59) DIA. MAX.
25.3 (1) DIA. MAX.
TWO PLACES
42 (1.65) DIA. MAX.
Conform to JEDEC B-43
All dimensions in millimeters (inches)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
SD603C..C Series
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Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000
30°60°90°
180°
DC
120°
A ve rag e Fo rw ard C urre nt (A )
Maxim um Allow able Heatsink Tem perature (°C)
Conduction Period
SD 603C ..C Series
(Double Side C ooled )
R (D C ) = 0.03 8 K/W
th J-hs
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700
30°60°90°120°180°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Angle
SD603C..C Series
(Double Side Cooled)
R (DC) = 0.038 K/W
th J- hs
0
200
400
600
800
1000
1200
1400
1600
1800
0 100 200 300 400 500 600
180°
120°
90°
60°
30°
Average Forward Current (A)
Maximum Average Forward Pow er Loss (W)
RMS Lim it
SD603C..C Series
T = 12 5°C
J
Conduction Angle
0
500
1000
1500
2000
2500
0 200 400 600 800 1000
Averag e Forw ard Current (A)
RMS Limit
Maximum Average Forward Power Loss (W)
DC
180°
120°
90°
60°
30°
SD603C ..C Series
T = 1 25°C
J
Conduction Period
2500
3000
3500
4000
4500
5000
5500
6000
6500
7000
7500
8000
1 10 100
Peak Half Sine Wave Forw ard Current (A)
Num ber o f Eq u a l Am pl itud e H a lf C yc le Cu rr e nt P u ls es ( N)
In it ia l T = 1 2 5 °C
@ 6 0 Hz 0.0083 s
@ 5 0 Hz 0.0100 s
J
SD 603C ..C Series
At Any Rated Load Condition and With
Rate d V Applie d F ollo w ing Surge.
RRM
2000
3000
4000
5000
6000
7000
8000
9000
0.01 0.1 1
Pulse Train D ura tion (s)
Peak Half Sine Wave Forward Current (A)
M a x im um N on Re p etitive S urg e C urre nt
Ve rsus Pulse Train D ura tion .
SD603C..C Series
Initial T = 1 25 °C
No Voltage Reapplied
Ra te d V Re app lied
J
RRM
SD603C..C Series
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Fig. 9 - Forward Voltage Drop Characteristics Fig. 10 - Thermal Impedance ZthJ-hs Characteristic
Fig. 11 - Typical Forward Recovery Characteristics
10
100
1000
10000
.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5 8.5
Instanta neous Forw ard Vo ltage (V)
Instantaneo us Forw ard C urre nt (A )
T = 25 °C
J
T = 125 °C
J
SD 603C ..C Series
0.001
0.01
0.1
0 .00 1 0 .01 0 .1 1 10 10 0
Squa re W a ve P u lse D ura tion (s)
thJ-hs
Transien t The rm al Im pedan ce Z (K/W )
Ste a d y Sta te Va lu e :
R = 0.076 K/W
(Single Side Co oled)
R = 0.038 K/W
(Double Side Cooled)
(D C O peration)
th J- hs
th J-hs
SD 603C..C Series
0
20
40
60
80
100
0 200 400 600 800 1000 1200 1400 1600 1800 2000
Fo rw a rd Rec ove ry (V )
T = 12 5°C
T = 25°C
J
J
Ra te O ff Rise O f Fo rw ard C urre n t di/d t (A/ usec )
SD 603C ..S20C Series
I
V
FP
Fig. 14 - Recovery Current CharacteristicsFig. 12 - Recovery Time Characteristics Fig. 13 - Recovery Charge Characteristics
10
20
30
40
50
60
70
80
90
100
110
120
10 20 30 40 50 60 70 80 90 100
M aximum Reverse Recovery Current - Irr (A)
Rate Of Fall Of Forward Current - di/dt (A/µs)
I = 10 00 A
Sq u a re P uls e
FM
500 A
250 A
SD603C..S10C Series
T = 125 °C; V = 30V
r
J
20
30
40
50
60
70
80
90
100
110
120
130
10 20 30 40 50 6 0 70 80 9 0 100
M a x im um Rev erse Rec o ve ry C h a rg e - Q rr (µ C )
Rate Of Fall Of Forward Current - di/dt (A/µs)
I = 1 000 A
Squ a re P ulse
FM
500 A
250 A
SD603C ..S10C Series
T = 125 °C; V = 30V
r
J
1.6
1.7
1.8
1.9
2
2.1
2.2
10 100
Rate Of Fall Of Forward Current - di/dt (A/µs)
Maximum Reverse Recovery Time - Trr (µs)
I = 1 000 A
Sq u a re Pu ls e
500 A
250 A
FM
SD603C..S10C Series
T = 125 °C; V = 30V
r
J
SD603C..C Series
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Fig. 15 - Recovery Time Characteristics Fig. 17 - Recovery Current CharacteristicsFig. 16 - Recovery Charge Characteristics
40
60
80
100
120
140
160
180
200
10 20 30 40 50 60 7 0 80 90 100
M a x im um Rev erse Re co ve ry C h a rg e - Q rr (µ C )
Rate Of Fall Of Forward Current - di/dt (A/µs)
I = 1 00 0 A
Squa re Pulse
FM
500 A
250 A
SD 603C ..S15C Series
T = 12 5 °C ; V = 30V
r
J
40
60
80
100
120
140
160
180
200
10 20 30 40 50 60 70 80 90 100
M a xim um Reve rse Reco ve ry C h arg e - Q rr (µC )
Rate Of Fall Of Forward Current - di/dt (A/µs)
I = 1 000 A
Sq u are P ulse
500 A
250 A
FM
SD 603C ..S2 0C Se ries
T = 125 °C ; V = 30V
r
J
2
2.5
3
3.5
4
4.5
10 100
Rate Of Fall Of Forward Current - di/dt (A/µs)
M a xim um Re ve rse Re c ove ry Tim e - Trr (µs)
I = 1000 A
Squa re Pulse
500 A
250 A
FM
SD 603C ..S20C Series
T = 125 °C ; V = 30V
r
J
2
2.5
3
3.5
4
10 100
Ra te O f Fa ll Of Forwa rd Cu rrent - di/d t (A/µs)
Maximum Reverse Recovery Time - Trr (µs)
I = 1 00 0 A
Sq ua re P u ls e
FM
500 A
250 A
SD603C..S15C Series
T = 125 °C; V = 30V
r
J
20
30
40
50
60
70
80
90
100
110
120
130
140
150
10 20 30 40 50 60 70 80 90 100
M aximum Reverse Recovery Current - Irr (A)
Rate Of Fall Of Forward Current - di/dt (A/µs)
I = 1 000 A
Sq ua re P u l se
FM
500 A
250 A
SD603C..S20C Series
T = 125 °C; V = 30V
r
J
20
30
40
50
60
70
80
90
100
110
120
130
140
10 20 30 40 50 60 70 80 90 100
M ax im um Rev erse Re cov ery C urre n t - Irr (A )
Rate Of Fall Of Forward Current - di/dt (A/µs)
I = 1 000 A
Sq u are P u lse
FM
500 A
250 A
SD 603C ..S15C Series
T = 125 °C ; V = 30V
r
J
Fig. 18 - Recovery Time Characteristics Fig. 19 - Recovery Charge Characteristics Fig. 20 - Recovery Current Characteristics
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
12
0.1
Pulse Basew idth (µs)
Peak Forward Current (A)
4
dv/dt = 1000V/µs
Sinusoid al Pulse
20 joules per pulse
10
0.4
0.2
0.04
0.02
0.01
SD603C..S10 C Series
T = 125°C, V = 11 20V
J
RR M
tp
1E4
1
E1 1E2 1E3 1E4
12
0.1
Pulse Base w idth (µs)
4
20 jo u l e s p er p u ls e
10
0.4
0.2
Trap ezoida l Pul se
dv/dt = 1000V/µs; di/dt=50A/µs
SD603C..S10C Series
T = 125°C, V = 1120V
J
RRM
tp
1E1
Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics
SD603C..C Series
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1E1
1E2
1E3
1E4
1E11E21E31E4
1
2
0.1
Pulse Base w idth (µs)
P e a k F o rw ar d C u rre n t (A )
4
dv/dt = 1000V/µs
Sinusoidal Pulse
20 joules per pulse
10
0.4
0.2
0.04
0.02
SD603C..S15C Series
T = 125°C, V = 1760V
J
RR M
tp
1E4
1
E1 1E2 1E3 1E4
1
2
Pulse Basew idth (µs)
4
20 joules per pulse
10
0.4
0.2
Tra pezoid al Pu lse
dv/dt = 1 000V/µs; di/dt=50A/µs
SD603C..S15C Series
T = 125°C, V = 1760V
J
RRM
tp
1E1
Fig. 22 - Maximum Total Energy Loss Per Pulse Characteristics
1E1 1E2 1E3 1E4
1
2
P u lse B a se w id t h ( µ s)
4
20 joules per pulse
10
0.4
Trap ezo idal Pu lse
dv/dt = 1000V/µs; di/dt=50A/µs
T = 125°C, V = 1760V
SD603C..S20C Series
J
RRM
tp
1E1
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E
4
1
2
0.1
Pulse Ba sew idth (µs)
Peak Forw ard Current (A)
4
dv/dt = 1000V/µs
Sin u soid al Pu lse
2 0 jo u l es p e r p ulse
10
0.4
0.2
0.04
SD603C..S20C Series
T = 125°C , V = 1760V
J
RRM
tp
1E4
Fig. 23 - Maximum Total Energy Loss Per Pulse Characteristics
